# Intelligent Power Module (IPM), (NTC) Option, IGBT, 650 V, 50 A, 2.5 kV, DIP, SPM31

![Product image](https://novapart.co/image/farnell:3265471/)

**URL**: https://novapart.co/products/NFAM5065L4BT/intelligent-power-module-ipm-ntc-option-igbt-650-v
**SKU**: NFAM5065L4BT
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Intelligent Power Modules
**Price**: €16.7400
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Ipm Series | SPM31 |
| Product Range | SPM31 Series |
| Ipm Case Style | DIP |
| Ipm Power Device | IGBT |
| Isolation Voltage | 2.5kV |
| Current Rating (Ic / Id) | 50A |
| Voltage Rating (Vces / Vdss) | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3265471/)

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## Intelligent Power Module (IPM), 650 V, 50 A NFAM5065L4BT 

## **General Description** 

The NFAM5065L4BT is a fully-integrated inverter power module consisting of an independent High side gate driver, LVIC, six IGBT’s and a temperature sensor (VTS or Thermistor (T)), suitable for driving permanent magnet synchronous (PMSM) motors, brushless DC (BLDC) motors and AC asynchronous motors. The IGBT’s are configured in a three-phase bridge with separate emitter connections for the lower legs for maximum flexibility in the choice of control algorithm. 

**DIP39 54.5 x 31.0 CASE MODGC** 

## **MARKING DIAGRAM** 

The power stage has under voltage lockout protection (UVP). Internal boost diodes are provided for high side gate boost drive. 

## **Features** 

- Three-phase 650 V, 50 A IGBT Module with Independent Drivers 

NFAM5065L4BT ZZZATYWW 

- Active Logic Interface 

- Built-in Undervoltage Protection (UVP) 

- Integrated Bootstrap Diodes and Resistors 

- Separate Low-side IGBT Emitter Connections for Individual Current Sensing of Each Phase 

- Temperature Sensor (VTS or Thermistor (T)) 

- UL1557 Certified (File No.339285) 

- This Device is Pb−Free and RoHS Compliant 

Device marking is on package top side 

NFAM5065L4BT = Specific Device Code ZZZ = Assembly Lot Code A = Assembly Location T = Test Location Y = Year WW = Work Week 

## **Typical Applications** 

- Industrial Drives 

- Industrial Pumps 

- Industrial Fans 

- Industrial Automation 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**|
|---|---|---|
|NFAM5065L4BT|DIP39<br>54.5 x 31.0<br>(Pb-Free)|90 / Box|



**==> picture [274 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
RTH VTH P U V W<br>VS(U)<br>VDD(UH)VB(U) High SideHVIC1 HS1<br>HIN(U)<br>VS(V)<br>VDD(VH)VB(V) High SideHVIC2 HS2 HS1 HS2 HS3<br>HIN(V)<br>VS(W)<br>VDD(WH)VB(W) High SideHVIC3 HS3<br>HIN(W)<br>VTS LS1 LS2 LS3<br>LIN(U)<br>LIN(V) Low Side LS1<br>LIN(W)CFODVFOCIN ProtectionLVICwith LS2LS3<br>VSS<br>VDD(L)<br>NU NV NW<br>**----- End of picture text -----**<br>


**Figure 1. Application Schematic** 

Publication Order Number: **NFAM5065L4BT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2019 **January, 2024 − Rev. 2** 

**NFAM5065L4BT** 

## **APPLICATION SCHEMATIC** 

**==> picture [473 x 476] intentionally omitted <==**

**----- Start of picture text -----**<br>
5V line<br>RTH (39)<br>* NTC Thermistor<br>VB(U) (3) VTH (38)<br>VS(U) (1) P (37)<br>CS + C1<br>VB<br>HIN(U) (6) HIN HOUT<br>VDD(UH) (4) VDD HVIC1<br>U (36)<br>VSS VS<br>VB(V) (9)<br>VS(V) (7)<br>VB<br>HIN(V) (12) HIN HOUT<br>VDD(VH) (10) VDD HVIC2<br>V (35)<br>VSS VS Motor<br>VB(W) (15)<br>VS(W) (13)<br>MCU VB<br>HIN(W) (18) HIN HOUT<br>VDD(WH) (16) VDD HVIC3<br>W (34)<br>VSS VS<br>VTS (20) VTS<br>LIN(U) (21) LIN(U) OUT(U)<br>LIN(V) (22) LIN(V) NU (33)<br>LIN(W) (23)<br>LIN(W)<br>5V line<br>LVIC<br>VFO (24) VFO OUT(V)<br>CFOD (25) CFOD NV (32)<br>CIN (26) CIN<br>15V line<br>VDD(L) (28) VDD<br>VSS (27) VSS OUT(W)<br>NW (31)<br>Signal for over current trip<br>Phase current<br>**----- End of picture text -----**<br>


**Figure 2. Application Schematic − Adjustable Option** 

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**NFAM5065L4BT** 

**BLOCK DIAGRAM** 

**==> picture [442 x 562] intentionally omitted <==**

**----- Start of picture text -----**<br>
RTH (39)<br>* NTC Thermistor<br>VTH (38)<br>VS(U) (1)<br>P (37)<br>VB(U) (3)<br>VB<br>VDD(UH) (4) VDD HOUT<br>HVIC1<br>HIN(U) (6) HIN<br>= VSS o VS = U (36)<br>VS(V) (7)<br>VB(V)(9)<br>VB<br>VDD(VH) (10) VDD HOUT<br>HVIC2<br>HIN(V) (12) HIN<br>VSS VS V (35)<br>VS(W) (13) Sle<br>VB(W) (15)<br>VB<br>VDD(WH) (16) VDD HOUT<br>HVIC3<br>HIN(W) (18) HIN<br>L VSS VS e||| W (34)<br>VTS (20) VTS OUT(U)<br>LIN(U) (21) LIN(U)<br>NU (33)<br>LIN(V) (22) LIN(V)<br>LIN(W) (23) LIN(W)<br>VFO (24) VFO OUT(V)<br>LVIC<br>CFOD (25) CFOD<br>NV (32)<br>CIN (26) CIN<br>VSS (27) VSS<br>VDD(L) (28) VDD OUT(W)<br>NW (31)<br>ele<br>Figure 3. Equivalent Block Diagram<br>**----- End of picture text -----**<br>


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**NFAM5065L4BT** 

## **PIN FUNCTION DESCRIPTION** 

|**Pin**<br>~~a~~|**Name**|**Description**|
|---|---|---|
|1<br>~~a~~|VS(U)|High-Side Bias Voltage GND for U phase IGBT Driving|
|(2)<br>~~a~~|−|Dummy|
|3<br>~~a~~|VB(U)|High-Side Bias Voltage for U phase IGBT Driving|
|4<br>~~a~~|VDD(UH)|High-Side Bias Voltage for U phase IC|
|(5)<br>~~a~~|−<br>|Dummy<br>|
|6<br>~~eG~~|HIN(U)<br>~~eG~~|Signal Input for High-Side U Phase<br>~~eG~~|
|7<br>~~eG~~|VS(V)<br>~~eG~~|High-Side Bias Voltage GND for V phase IGBT Driving<br>~~eG~~|
|(8)<br>~~a~~|−|Dummy|
|9<br>~~a~~|VB(V)|High-Side Bias Voltage for V phase IGBT Driving|
|10<br>~~a~~|VDD(VH)|High-Side Bias Voltage for V phase IC|
|(11)<br>~~a~~|−|Dummy|
|12<br>~~a~~|HIN(V)|Signal Input for High-Side V Phase|
|13<br>~~a~~|VS(W)|High-Side Bias Voltage GND for W phase IGBT Driving|
|(14)<br>~~a~~<br>~~a~~|−<br>~~es~~|Dummy|
|15<br>~~a~~<br>~~a~~|VB(W)<br>~~es~~|High-Side Bias Voltage for W phase IGBT Driving|
|16<br>~~a~~|VDD(WH)<br>~~es~~|High-Side Bias Voltage for W phase IC|
|(17)<br>~~a~~|−|Dummy|
|18<br>~~a~~|HIN(W)<br>|Signal Input for High-Side W Phase<br>|
|(19)<br>~~eG~~|−<br>~~eG~~|Dummy<br>~~eG~~|
|20<br>~~Ge~~|VTS<br>~~Ge~~|Voltage Output for LVIC Temperature Sensing Unit<br>~~Ge~~|
|21<br>~~a ~~|LIN(U)<br> ~~eG~~|Signal Input for Low-Side U Phase<br>~~eG~~|
|22<br>~~a~~|LIN(V)|Signal Input for Low-Side V Phase|
|23<br>~~a ~~|LIN(W)<br> ~~eG~~|Signal Input for Low-Side W Phase<br>~~eG~~|
|24<br>~~a~~|VFO|Fault Output|
|25<br>~~a ~~|CFOD<br> ~~eG~~|Capacitor for Fault Output Duration Selection<br>~~eG~~|
|26<br>~~a~~|CIN|Input for Current Protection|
|27<br>~~a~~|VSS|Low-Side Common Supply Ground|
|28<br>~~a~~|VDD(L)|Low-Side Bias Voltage for IC and IGBTs Driving|
|(29)<br>~~a~~|−|Dummy|
|(30)<br>~~a~~|−|Dummy|
|31<br>~~a~~|NW<br>|Negative DC-Link Input for U Phase<br>|
|32<br>~~eG~~|NV<br>~~eG~~|Negative DC-Link Input for V Phase<br>~~eG~~|
|33<br>~~a~~|NU|Negative DC-Link Input for W Phase|
|34<br>~~a~~|W|Output for U Phase|
|35<br>~~a~~|V|Output for V Phase|
|36<br>~~a eG~~|U<br>~~eG~~|Output for W Phase<br>~~eG~~|
|37<br>~~a ~~|P<br> ~~eG~~|Positive DC-Link Input<br>~~eG~~|
|38<br>~~a~~|VTH|Thermistor Bias Voltage (T) / Not connection|
|39<br>~~a~~|RTH|Series Resister for Thermistor (Temperature Detection) *optional for T|



1. Pins of () are the dummy for internal connection. These pins should be no connection. 

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**NFAM5065L4BT** 

## **ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C) (Note 2) 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**(TC = 25C = 25= 25°C) (Note 2)||||
|---|---|---|---|---|
|**Symbol**|**Rating**|**Conditions**|**Value**|**Unit**|
|VPN|Supply Voltage|P−NU, NV, NW|450|V|
|VPN(surge)|Supply Voltage (Surge)|P−NU, NV, NW (Note 3)|550|V|
|VPN(PROT)|Self Protection Supply Voltage Limit<br>(Short−Circuit Protection Capability)|VDD = VBS = 13.5 V～16.5 V, TJ= 150°C,<br>VCES < 650 V, Non−Repetitive, < 2 s|400|V|
|Vces|Collector−emitter voltage||650|V|
|VRRM<br>~~a~~|Maximum Repetitive<br>Revers Voltage<br>~~a~~|~~a~~|650<br>~~a~~|V<br>~~a~~|
|±Ic<br>~~a~~|Each IGBT Collector Current<br>~~a~~|~~a~~|±30<br>~~a~~|A<br>~~a~~|
|Iop<br>~~a~~|Output current (peak)<br>~~a~~|PWM control<br>~~a~~|±50<br>~~a~~|A<br>~~a~~|
|±Icp<br>~~a~~|Each IGBT Collector<br>Current (Peak)<br>~~a~~|Under 1 ms Pulse Width<br>~~a~~|±100<br>~~a~~|A<br>~~a~~|
|VDD<br>~~a~~<br>~~——~~|Control Supply Voltage<br>~~a~~<br>~~——~~|VDD(UH,VH,WH), VDD(L)−VSS<br>~~a~~<br>~~oe~~|−0.3 to 20<br>~~a~~<br>~~oe~~|V<br>~~a~~|
|VBS<br>~~——~~|High−Side<br>Control Bias voltage<br>~~——~~|VB(U)−VS(U), VB(V)−VS(V),<br>VB(W)−VS(W)<br>~~oe~~|−0.3 to 20<br>~~oe~~|V|
|VIN<br>~~——~~|Input Signal Voltage<br>~~——~~|HIN(U), HIN(V), HIN(W), LIN(U), LIN(V),<br>LIN(W)–VSS<br>~~oe~~|−0.3 to VDD<br>~~oe~~|V|
|VFO<br>~~——~~|Fault Output Supply Voltage<br>~~——~~|VFO–VSS<br>~~oe~~|−0.3 to VDD<br>~~oe~~|V|
|IFO<br>~~——~~<br>~~a~~|Fault Output Current<br>~~——~~<br>~~a~~|Sink Current at VFO pin<br>~~oe~~<br>~~a~~|2<br>~~oe~~<br>~~a~~|mA<br>~~a~~|
|VCIN<br>~~a~~|Current Sensing<br>Input Voltage<br>~~a~~|CIN–VSS<br>~~a~~|−0.3 to VDD<br>~~a~~|V<br>~~a~~|
|Pc<br>~~a~~|Corrector Dissipation<br>~~a~~|Per One Chip<br>~~a~~|125<br>~~a~~|W<br>~~a~~|
|TJ|Operating Junction Temperature|~~a~~|−40 to +150|°C|
|Tstg<br>~~a~~|Storage temperature<br>~~a~~|~~a~~<br>~~a~~|−40 to +125<br>~~a~~|°C<br>~~a~~|
|Tc<br>~~a~~|Module Case Operation Temperature<br>~~a~~|~~a~~<br>~~a~~|−40 to +125<br>~~a~~|°C<br>~~a~~|
|VISO<br>~~a~~|Isolation voltage<br>~~a~~|60 Hz, Sinusoidal, AC 1 minute,<br>Connection<br>Pins to Heat Sink Plate<br>~~a~~<br>~~a~~|2500<br>~~a~~|Vrms<br>~~a~~|



3. This surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**<br>~~esee~~|**Rating**<br>~~ee~~|**Conditions**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|Rth(j-c)Q<br>~~esee~~|Junction-to-Case Thermal<br>Resistance<br>~~ee~~|Inverter IGBT Part (per 1/6 module)<br>~~ee~~|−<br>~~ee~~|−<br>~~ee~~|1.0<br>~~ee~~|°C/W<br>~~ee~~|
|Rth(j-c)F<br>~~esee~~||Inverter FWD Part (per 1/6 module)<br>~~ee~~|−<br>~~ee~~|−<br>~~ee~~|1.7<br>~~ee~~|°C/W<br>~~ee~~|



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**NFAM5065L4BT** 

## **RECOMMENDED OPERATING CONDITIONS** (Note 5) 

|**Symbol**<br>~~a~~|**Rating**<br>~~a~~<br>~~a~~|**Conditions**<br>~~a~~|**Conditions**<br>~~a~~|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|VPN<br>~~a~~|Supply Voltage<br>~~a~~<br>~~a~~|P−NU, NV, NW||−|300|400|V|
|VDD|Gate Driver Supply<br>Voltages<br>~~a~~<br>~~a~~<br>~~a~~|VDD(UH,VH,WH), VDD(L)−VSS<br>~~a~~||13.5<br>~~a~~|15<br>~~a~~|16.5|V|
|VBS<br>~~a~~<br>~~a~~||VB(U)−VS(U), VB(V)−VS(V),<br>VB(W)−VS(W)<br>~~a~~<br>~~a~~<br>~~ee~~||13.0<br>~~a~~<br>~~ee~~|15<br>~~a~~<br>~~ee~~|18.5<br>~~ee~~|V|
|dVDD / dt,<br>dVBS / dt<br>~~a~~<br>~~a~~|Supply Voltage Variation<br>~~a~~<br>~~a~~|~~a~~<br>~~ee~~||−1<br>~~ee~~|−<br>~~ee~~|1<br>~~ee~~|V/ s|
|fPWM<br>~~a~~|PWM Frequency<br>~~a~~|~~ee ~~||1<br> ~~ee ~~|−<br> ~~ee ~~|20<br> ~~ee~~|kHz|
|DT<br>~~a ~~|Dead Time<br> ~~a~~|Turn-off to Turn-on (external)||1.5|−|−|s|
|Io|Allowable r.m.s. Current|VPN = 300 V,<br>VDD = 15 V,<br>P.F. = 0.8<br>Tc≤125°C,<br>Tj≤150°C<br>(Note 5)|fPWM= 5 kHz|−|−|30.0|Arms|
||||fPWM=  15 kHz|−|−|21.2||
|PWIN (on)|Allowable Input Pulse<br>Width<br>~~PP~~|200 V≤VPN≤400 V<br>13.5 V≤VDD≤16.5 V<br>13.0 V≤VBS≤18.5 V<br>−20°C≤Tc≤100°C<br>~~PP~~||1.0|−|−|s|
|PWIN (off)||||1.5|−|−||
|~~a~~|Package Mounting Torque|M3 type screw||0.6|0.7|0.9|Nm|



Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 

5. Allowable r.m.s current depends on the actual conditions. 

6. Flatness tolerance of the heatsink should be within −50 m to +100 m. 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C, VDD = 15 V, VBS = 15 V, unless otherwise specified.) (Note 7) 

|Ices<br>~~ns~~<br>~~fo~~|Collector-Emitter Leakage<br>Current<br>~~ns~~<br>~~fo~~|Collector-Emitter Leakage<br>Current<br>~~ns~~<br>~~fo~~|Vce = Vces, TJ= 25°C<br>~~ns~~<br>|−<br>~~ns~~<br>~~ee~~<br>|−<br>~~ns~~<br>~~ee~~<br>|1<br>~~ns~~<br>|mA<br>~~ns~~<br>|
|---|---|---|---|---|---|---|---|
||||Vce = Vces, TJ= 150°C<br>~~ns~~<br>|−<br>~~ns~~<br>~~ee~~<br>|−<br>~~ns~~<br>~~ee~~<br>|10<br>~~ns~~<br>|mA<br>~~ns~~<br>|
|VCE(sat)<br>~~fo~~|Collector-Emitter Saturation<br>Voltage<br>~~fo~~||VDD = VBS = 15 V, IN = 5 V<br>Ic = 50 A, TJ= 25°C<br>|−<br>~~ee~~<br>|1.65<br>~~ee~~<br>|2.30<br>|V<br>|
||||VDD = VBS = 15 V, IN = 5 V<br>Ic = 50 A, TJ= 150°C<br>|−<br>~~ee~~<br>|1.85<br>~~ee~~<br>|−<br>|V<br>|
|VF<br>|FWDi Forward Voltage<br>||IN = 0 V, Ic = 50 A, TJ= 25°C<br>~~OO~~|−<br>~~OO~~|2.00<br>~~OO~~|2.40<br>~~OO~~|V<br>~~OO~~|
||||IN = 0 V, Ic = 50 A, TJ= 150°C<br>~~OO~~|−<br>~~OO~~<br>~~re~~|2.00<br>~~OO~~<br>~~a~~|−<br>~~OO~~<br>~~a~~|V<br>~~OO~~|
|ton|Switching Times|High Side|VPN = 300 V, VDD(H) = VDD(L) = 15 V<br>Ic = 50 A, TJ= 25°C, IN = 0⇔5 V<br>Inductive Load|0.90<br>~~re~~<br>~~re~~|1.50<br>~~a~~|2.10<br>~~a~~|s|
|tc(on)||||−<br>~~re ~~<br>~~re~~<br>~~re~~|0.40<br> ~~a~~<br>~~ee~~|0.70<br>~~a~~<br>~~ee~~|s<br>~~ee~~|
|toff||||−<br>~~re~~<br>~~re~~<br>~~re~~|1.80<br>~~ee~~<br>~~ee~~|2.40<br>~~ee~~<br>~~ee~~|s<br>~~ee~~<br>~~ee~~|
|tc(off)||||−<br>~~re~~<br>~~re~~<br>~~re~~|0.25<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.75<br>~~ee~~<br>~~ee~~<br>~~ee~~|s<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|trr||||−<br>~~re~~<br>~~re~~<br>~~re~~|0.25<br>~~ee~~<br>~~ee~~<br>~~ee~~|−<br>~~ee~~<br>~~ee~~<br>~~ee~~|s<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|ton||Low Side|VPN = 300 V, VDD(H) = VDD(L) = 15 V<br>Ic = 50 A, TJ= 25°C, IN = 0⇔5 V<br>Inductive Load|0.90<br>~~re~~<br>~~re~~<br>~~re~~|1.50<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.10<br>~~ee~~<br>~~ee~~<br>~~es~~|s<br>~~ee~~<br>~~ee~~|
|tc(on)||||−<br>~~re~~<br>~~re~~<br>~~re~~|0.30<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.60<br>~~ee~~<br>~~es~~<br>~~ee~~|s<br>~~ee~~<br>~~ee~~|
|toff<br>~~_——~~||||−<br>~~re ~~<br>~~re~~<br>~~re~~|1.70<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|2.30<br> ~~es~~<br>~~ee~~<br>~~ee~~|s<br>~~ee~~<br>~~ee~~|
|tc(off)<br>~~_——~~||||−<br>~~re~~<br>~~re~~|0.25<br>~~ee~~<br>~~ee~~|0.75<br>~~ee~~<br>~~ee~~|s<br>~~ee~~<br>~~ee~~|
|trr<br>~~_——~~||||−<br>~~re~~<br>~~a~~|0.25<br>~~ee~~<br>~~a~~|−<br>~~ee~~<br>~~a~~|s<br>~~ee~~<br>~~a~~|



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## **NFAM5065L4BT** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C, VDD = 15 V, VBS = 15 V, unless otherwise specified.) (Note 7) (continued) 

|IQDDH<br>~~jj~~|Quiescent VDD Supply<br>Current<br>~~jj~~<br>~~ff~~|VDD(UH,VH,WH) = 15 V,<br>HIN(U,V,W) = 0 V<br>~~ff~~|VDD(UH)−VSS<br>VDD(VH)−VSS<br>VDD(WH)−VSS<br>~~fffit~~|−<br>~~fit~~|−<br>~~fit~~|0.30<br>~~te~~|mA<br>~~te~~|
|---|---|---|---|---|---|---|---|
|IQDDL<br>~~jj~~||VDD(L) = 15 V,<br>LIN(U,V,W) = 0 V<br>~~ff~~|VDD(L)−VSS<br>~~fffit~~|−<br>~~fit~~|−<br>~~fit~~|3.50<br>~~te~~|mA<br>~~te~~|
|IPDDH<br>~~jj~~<br>~~eee~~|Operating VCC Supply<br>Current<br>~~jj~~<br>~~ff~~<br>~~eee~~|VDD(UH,VH,WH) = 15 V,<br>fPWM= 20 kHz, Duty = 50%,<br>Applied to one PWM Signal<br>Input for High-Side<br>~~ff~~<br>~~eee~~|VDD(UH)−VSS<br>VDD(VH)−VSS<br>VDD(WH)−VSS<br>~~ff fit~~<br>~~eee~~|−<br>~~fit~~<br>~~eee~~|−<br>~~fit ~~<br>~~eee~~|0.40<br> ~~te~~<br>~~eee~~|mA<br>~~te~~<br>~~eee~~|
|IPDDL<br>~~eee~~||VDD(L) = 15 V,<br>fPWM= 20 kHz, Duty = 50%,<br>Applied to one PWM Signal<br>Input for Low-Side<br>~~eee~~<br>~~ee~~|VDD(L)−VSS<br>~~eee~~<br>~~eee~~|−<br>~~eee~~<br>~~eee~~|−<br>~~eee~~<br>~~eee~~|6.00<br>~~eee~~<br>~~eee~~|mA<br>~~eee~~<br>~~eee~~|
|IQBS<br>~~ee~~|Quiescent VBS Supply<br>Current<br>~~ee~~|VBS = 15 V,<br>HIN(U,V,W) = 0 V<br>~~ee~~<br>~~ee~~|VB(U)−VS(U)<br>VB(V)−VS(V)<br>VB(W)−VS(W)<br>~~ee~~<br>~~eee~~|−<br>~~ee~~<br>~~eee~~|−<br>~~ee~~<br>~~eee~~|0.30<br>~~ee~~<br>~~eee~~|mA<br>~~ee~~<br>~~eee~~|
|IPBS<br>~~rs~~|Operating VBS Supply<br>Current|VDD = VBS = 15 V,<br>fPWM= 20 kHz, Duty = 50%,<br>Applied to one PWM Signal<br>Input for High-Side<br>~~ee ~~<br>~~A~~|VB(U)−VS(U)<br>VB(V)−VS(V)<br>VB(W)−VS(W)<br> ~~eee~~|−<br>~~eee~~<br>~~er~~|−<br>~~eee~~<br>~~er ee~~|5.00<br>~~eee~~<br>~~ee~~|mA<br>~~eee~~<br>~~ee~~|
|VIN(ON)<br>~~es~~<br>~~rs~~<br>~~a~~|ON Threshold Voltage<br>~~es~~|HIN(U,V,W)−VSS, LIN(U,V,W)−VSS<br>~~es~~<br>~~A~~||−<br>~~es~~<br>~~er~~<br>~~es~~|−<br>~~es~~<br>~~er ee~~|2.6<br>~~es~~<br>~~ee~~|V<br>~~es~~<br>~~ee~~|
|VIN(OFF)<br>~~es~~<br>~~rs~~<br>~~a~~|OFF Threshold Voltage<br>~~es~~|||0.8<br>~~es~~<br>~~er~~<br>~~es~~|−<br>~~es~~<br>~~er ee~~|−<br>~~es~~<br>~~ee~~|V<br>~~es~~<br>~~ee~~|
|VCIN(ref)<br>~~rs~~<br>~~a—~~|Short Circuit Trip Level<br>~~SS —_~~|VDD = 15 V, CIN−VSS<br>~~A~~<br>~~—_~~||0.46<br>~~er~~<br>~~es~~<br>~~—_~~|0.48<br>~~er ee~~|0.50<br>~~ee~~|V<br>~~ee~~|
|UVDDD<br>~~—~~|Supply Circuit<br>Under-Voltage Protection<br>~~SS —_~~<br>~~I~~<br>~~I~~<br>~~a~~|Detection Level<br>~~—_~~||10.3<br>~~—_~~|−|12.5|V|
|UVDDR<br>~~—~~<br>~~I~~||Reset Level<br>~~—_~~<br>~~I~~<br>~~a~~||10.8<br>~~—_~~<br>~~I~~<br>~~a~~|−<br>~~I~~<br>~~a~~|13.0<br>~~I~~<br>~~a~~|V<br>~~I~~<br>~~a~~|
|UVBSD<br>~~—~~<br>~~I~~||Detection Level<br>~~—_~~<br>~~I~~<br>~~a~~||10.0<br>~~—_~~<br>~~I~~<br>~~a~~|−<br>~~I~~<br>~~a~~|12.0<br>~~I~~<br>~~a~~|V<br>~~I~~<br>~~a~~|
|UVBSR<br>~~—~~<br>~~a~~||Reset Level<br>~~—_~~<br>~~a~~<br>~~a~~||10.5<br>~~—_~~<br>~~a~~<br>~~a~~|−<br>~~a~~<br>~~a~~|12.5<br>~~a~~<br>~~a~~|V<br>~~a~~<br>~~a~~|
|VTS<br>~~—~~<br>~~a~~|Voltage Output for LVIC<br>Temperature Sensing Unit<br>~~SS —_~~<br>~~a~~<br>~~ee~~|VTS−VSS = 10 nF, Temp. = 25°C<br>~~—_~~<br>~~a~~<br>~~ee~~||0.905<br>~~—_~~<br>~~a~~<br>~~ee~~|1.030<br>~~a~~<br>~~ee~~|1.155<br>~~a~~<br>~~ee~~|V<br>~~a~~<br>~~ee~~|
|VFOH<br>~~eee~~|Fault Output Voltage<br>~~eee~~|VDD = 0 V, CIN = 0 V,<br>VFO Circuit: 10 k to 5 V Pull-up<br>~~eee~~||4.9<br>~~eee~~|−<br>~~eee~~|−<br>~~eee~~|V<br>~~eee~~|
|VFOL<br>~~eee~~<br>~~|~~||VDD = 0 V, CIN = 1 V,<br>VFO Circuit: 10 k to 5 V Pull-up<br>~~eee~~<br>~~poe~~||−<br>~~eee~~<br>~~poe~~|−<br>~~eee~~<br>~~poe~~|0.95<br>~~eee~~<br>~~poe~~|V<br>~~eee~~<br>~~poe~~|
|tFOD<br>~~a~~|Fault-Output Pulse Width|CFOD = 22 nF||1.6|2.4|−|ms|



8. The fault−out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: tFOD = 0.11 × 10[6] × CFOD (s). 

9. Values based on design and/or characterization. 

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**NFAM5065L4BT** 

## **Temperature of LVIC versus VTS Characteristics** 

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4.0<br>Po<br>a ss ss sD (<br>po<br>a Dell<br>3.5 ee<br>a OD et et<br>eeee<br>a OQce Des Dee<br>3.0 eG<br>2.5 aeepoaa aaaessscescee eeaceeeaeeceee eeelee eeee eeee eee<br>aaacca ee eaee eeee eees eeeeee ee eeeeee<br>2.0 a ee ee ee es es es<br>a aa aee ek akes Pk ee a esee essssese<br>0Baae Hae aa a es es ee es es ee ee ee<br>1.5 aeekk a Ia aaa a a a a eeaee ee essses ee eeee eeee<br>DE a a a<br>aQOa a a ss es es ee<br>1.0 GGCN SC<br>40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130<br>LVIC Temperature ( C)<br>VTS Output Voltage (V)<br>**----- End of picture text -----**<br>


**Figure 4. Temperature of LVIC versus VTS Characteristics** 

**Table 1. THERMISTOR CHARACTERISTICS (INCLUDED ONLY IN NFAM5060L4BT)** 

|**Parameter**<br>~~a~~|**Symbol**<br>~~es~~|**Condition**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|Resistance<br>~~a~~<br>~~a~~|R25<br>~~es~~<br>~~es~~|Tc = 25°C|46.530|47|47.47|k|
|Resistance<br>~~a~~<br>~~a~~|R125<br>~~es~~<br>~~es~~|Tc = 100°C|1.344|1.406|1.471|k|
|B-Constant (25−50°C)<br>~~a~~|−<br>~~es~~|B|4009.5|4050|4090.5|K|
|Temperature range|−|−|−40|−|+125|°C|



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10000<br>a<br>aSSSS<br>po<br>1000 wo] ft | | | | EE |PT<br>aa aaa ee a es es ee min |_||_|<br>a ee typ |_|<br>100 | | | |] NET | max |<br>SS SS | EE SS SS SS SS SS SS<br>a<br>poa a<br>a a a s,s<br>10<br>| |} | |<br>eeee ee ee— ee Se<br>a COpS<br>1 pt tT | Pt Et<br>−40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 110 120 130<br>Case Temperature Tc ( C)<br>]<br>Thermistor Resistance [k<br>**----- End of picture text -----**<br>


**Figure 5. Thermistor Resistance versus Case Temperature** 

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**8** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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DIP39, 54.50x31.00x5.60, 1.78P<br>CASE MODGC<br>ISSUE C<br>DATE 05 MAY 2025<br>12 . DIMENSIONCONTROLL ING  ANDDIMENSION:TOLERANCING PERMILLIMETERSASME Y14.5M,_ 2009. , Low ||_mi._|MILIMETERS Lowa | MNSMETERS<br>**----- End of picture text -----**<br>


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GENERIC<br>MARKING DIAGRAM*<br>XXXXXXXXXXXXXXXXX<br>ZZZATYWW<br>2D<br>CODE<br>XXXXX = Specific Device Code<br>ZZZ      = Assembly Lot Code *This information is generic. Please refer to device data<br>AT        = Assembly & Test Location sheet for actual part marking. Pb−Free indicator, “G” or<br>Y          = Year microdot “ ”, may or may not be present. Some products<br>WW     = Work Week may not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON91300G Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: DIP39, 54.50x31.00x5.60, 1.78P PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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