# Power MOSFET, P Channel, 30 V, 5 A, 0.065 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:4472954/)

**URL**: https://novapart.co/products/NDT452AP/power-mosfet-p-channel-30-v-5-a-0065-ohm-sot-223
**SKU**: NDT452AP
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1020
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (27-Jun-2024) |
| No. Of Pins | 4Pins |
| Channel Type | P Channel |
| Product Range | Multicomp Pro Power MOSFETs |
| Qualification | - |
| Power Dissipation | 3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5A |
| Drain Source On State Resistance | 0.065ohm |
| Gate Source Threshold Voltage Max | 2.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4472954/)

## **P Channel MOSFET** 

## **Features** 

- VDS (V) =30V 

- ID =-5A 

- RDS(ON) < 65mΩ (VGS =-10V) 

- RDS(ON) < 100mΩ (VGS =-4.5V) 

## **Absolute Maximum Ratings (Ta=25°C)** 

|**Absolute Maximum Ratings (Ta=25°C)**|**Absolute Maximum Ratings (Ta=25°C)**||||
|---|---|---|---|---|
|**Parameter**||**Symbol**|**Rating**|**Unit**|
|Drain-Source Voltage||VDS|-30|V|
|Gate-Source Voltage||VGS|±20||
|Continuous Drain Current, VGS@-10V|(Note 1a)|ID|-5|A|
|Pulsed Drain Current||IDM|-15||
|Continuous Drain-Source Diode Forward Current||IS|-2.5||
|Maximum Power Dissipation|(Note 1a)|PD|3|W|
||(Note 1b)||1.3||
||(Note 1c)||1.1||
|Thermal Resistance, Junction- to-Ambient|(Note 1a)|RθJA|42|°C/W|
|Thermal Resistance, Junction- to-Case|(Note 1)|RθJC|12||
|Operatingand Storage Temperature Range||TJ,TSTG|-65 to + 150|°C|



Note 1:  RᶿJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RᶿJC is guaranteed by design while RᶿCA is defined by users. For general reference: Applications on 4.5" × 5" FR-4 PCB under still air environment. typical RᶿJA is found to be: 

a. 42°C/W when mounted on a 1 in[2] pad of 2oz copper. 

b. 95°C/W when mounted on a 0.066in[2] pad of 2oz copper. 

c. 110°C/W when mounted on a 0.00123in[2] pad of 2oz copper. 

## **Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|**Electrical Characteristics**(TA = 25°C unless otherwise noted)|(TA = 25°C unless otherwise noted)|(TA = 25°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**Off Characteristics**|||||||
|Drain-to-Source Breakdown Voltage|VDSS|ID=250μA, VGS=0V|-30|||V|
|Zero Gate Voltage Drain Current|IDSS|VDS=-24V, VGS=0V|||-1|µA|
|||VDS=-24V, VGS=0V, TJ= 55°C|||-10||
|Gate-BodyLeakage Current|IGSS)|VDS=0V, VGS=±20V|||±100|nA|
|**On Characteristics(Note 1)**|||||||
|Gate Threshold Voltage|VGS(th)|VDS=VGSID=-250μA|-1|-1.6|-2.8|V|
||||||||



Newark.com/multicomp-pro 

Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

05/08/24 V1.0 

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## **P Channel MOSFET** 

|**Characteristic**|**Symbol**|**Conditions**<br>**Min**|**Typ**<br>**Max**<br>**Unit**|
|---|---|---|---|
|Static Drain-Source On-Resistance|RDS(On)|VGS=-10V, ID=-5A|65<br>mΩ<br>130<br>100|
|||VGS=-10V, ID=-5A, TJ= 125°C||
|||VGS=-4.5V, ID=-6A||
|On-State Drain Current|ID(on)|VGS= -10 V , VDS= - 5 V<br>-15|A|
|||VGS= -4.5 V, VDS= - 5 V<br>-5||
|Forward Transconductance|gFS|VDS=-10V,  ID=--5A|7<br>S|
|**Dynamic Characteristics(Note 2)**||||
|Input Capacitance|Ciss|VDS=-15V, VGS=0V, f=1MHz|690<br>pF<br>430<br>160|
|Output Capacitance|Coss|||
|Reverse Transfer Capacitance|Crss|||
|**Switching Characteristics(Note 2)**||||
|Turn-On DelayTime|td(on)|VDD= -10 V, ID= -1 A,<br>VGEN= -10 V, RGEN= 6Ω|9<br>20<br>nS<br>20<br>30<br>40<br>50<br>19<br>40|
|Turn-On Rise Time|tr|||
|Turn-Of DelayTime|td(of)|||
|Turn-Of Fall Time|tf|||
|Total Gate Charge|Qg|VDS= -10 V, ID= -5 A,<br>VGS= -10 V|22<br>30<br>nC<br>3.2<br>5.2|
|Gate Source Charge|Qgs|||
|Gate Drain Charge|Qgd|||
|**Drain-Source Diode Characteristics**||||
|Diode Forward Voltage(Note 2)|VSD|IS=-2.5A,VGS=0V|-1.2<br>V|
|Reverse RecoveryTime|trr|VGS=0V, IF=-2.5 A, dIF/dt=100 A/μs|100<br>nS|



**NOTES** : 

1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 

2. Guaranteed by design, not subject to production 

## **Typical Characterisitics** 

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Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

05/08/24 V1.0 

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## **P Channel MOSFET** 

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Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

05/08/24 V1.0 

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## **P Channel MOSFET** 

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## **Diagram** 

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Dimensions : Millimetres 

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## **Part Number Table** 

||**Part Number Table**||
|---|---|---|
||**Description**|**Part Number**|
||P Channel MOSFET, 5A, 30V|NDT452AP|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

05/08/24 V1.0 

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## Links

- [View this product on Novapart](https://novapart.co/products/NDT452AP/power-mosfet-p-channel-30-v-5-a-0065-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/ndt452ap/mosfet-p-channel-30v-5a-sot-223/dp/4472954)
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