# Power MOSFET, N Channel, 250 V, 10 A, 0.32 ohm, TO-251, Through Hole

![Product image](https://novapart.co/image/farnell:2473408/)

**URL**: https://novapart.co/products/NDDP010N25AZ-1H/power-mosfet-n-channel-250-v-10-a-032-ohm-to-251
**SKU**: NDDP010N25AZ-1H
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2530
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 52W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 52W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.32ohm |
| Transistor Case Style | TO-251 |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.32ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2473408/)

## **NDDP010N25AZ** 

**Power MOSFET** www.onsemi.com **250V, 10A, 420mΩ, N-Channel Features Electrical Connection**  High Speed Switching  Low Gate Charge 2,4  ESD Diode-Protected Gate  100% Avalanche Tested  Pb-Free, Halogen Free and RoHS Compliance 1. Gate **Specifications** 2. Drain 1 **Absolute Maximum Ratings** at Ta = 25  C 3. Source 4. Drain Parameter Symbol Value Unit Drain to Source Voltage VDSS 250 V 3 Gate to Source Voltage VGSS 30 V Drain Current (DC) ID 10 A Drain Current (Pulse) A **Packing Type:TL          Marking** IDP 40 PW10s, duty cycle1% Power Dissipation 1 Tc=25C PD 52 W **10N25** Junction Temperature Tj 150 C TL Storage Temperature Tstg  55 to C **AZ** LOT No. +150 Source Current (Body Diode) IS 10 A Avalanche Energy (Single Pulse) *[1] EAS 15.5 mJ Lead Temperature for Soldering C 4 4 TL 260 ~~=~~ Purposes, 3mm from Case for 10 Seconds ~~8~~ 1[2] **Thermal Resistance Ratings** 3 1 Parameter Symbol Value Unit ~~o~~ **DPAK** s 2 3 **IPAK** Junction to Case Steady State RJC 2.40 C/W Junction to Ambient *[2] RJA 125 Note : *[1] VDD=50V, L=1mH, IAV=5A (Fig.1) *[2] Insertion mounted Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **Ordering & Package Information** Device Package Shipping Memo DPAK(TP-FA), NDDP010N25AZT4H 700pcs. / reel Pb-Free SC-63, TO-252 and IPAK(TP), NDDP010N25AZ-1H 500pcs. / bag Halogen Free ~~———_—~~ SC-64, TO-251 **©** Semiconductor Components Industries, LLC, 2014 **1** Publication Order Number : **November 2014 - Rev. 2** 

Publication Order Number : **NDDP010N25AZ/D** 

**NDDP010N25AZ** 

## **Electrical Characteristics** at Ta  25  C 

|Parameter|Symbol|Conditions||Value||Unit|
|---|---|---|---|---|---|---|
||||min|typ|max||
|Drain to Source Breakdown Voltage|V(BR)DSS|ID=1mA, VGS=0V|250|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS=250V, VGS=0V|||1|A|
|Gate to Source Leakage Current|IGSS|VGS=±24V, VDS=0V|||10|A|
|Gate Threshold Voltage|VGS(th)|VDS=10V, ID=1mA|2.5||4.5|V|
|Forward Transconductance|gFS|VDS=10V, ID=5A||6.5||S|
|Static Drain to Source On-State Resistance|RDS(on)|ID=5A, VGS=10V||320|420|m|
|Input Capacitance|Ciss|VDS=20V, f=1MHz||980||pF|
|Output Capacitance|Coss|||80||pF|
|Reverse Transfer Capacitance|Crss|||25||pF|
|Turn-ON Delay Time|td(on)|See Fig.2||18||ns|
|Rise Time|tr|||26||ns|
|Turn-OFF Delay Time|td(off)|||44||ns|
|Fall Time|tf|||31||ns|
|Total Gate Charge|Qg|VDS=125V, VGS=10V, ID=10A||16||nC|
|Gate to Source Charge|Qgs|||4.7||nC|
|Gate to Drain “Miller” Charge|Qgd|||4.6||nC|
|Forward Diode Voltage|VSD|IS=10A, VGS=0V||0.96|1.2|V|
|Reverse Recovery Time|trr|See Fig.3<br>IS=10A, VGS=0V, di/dt=100A/s||130||ns|
|Reverse Recovery Charge|Qrr|||540||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **Fig.1 Unclamped Inductive Switching Test Circuit** 

**Fig.2 Switching Time Test Circuit** 

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## **Fig.3 Reverse Recovery Time Test Circuit** 

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**NDDP010N25AZ** 

## **Package Dimensions** 

## NDDP010N25AZT4H 

## **DPAK / TP-FA** 

## unit : mm 

1:Gate 2:Drain 3:Source 4:Drain 

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Recommended<br>Soldering Footprint<br>7.0<br>1.5<br>2.3 2.3<br>7.0<br>2.0<br>2.5<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

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**NDDP010N25AZ** 

## **Package Dimensions** 

NDDP010N25AZ-1H 

## **IPAK / TP** 

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unit : mm<br>**----- End of picture text -----**<br>


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1:Gate<br>2:Drain<br>3:Source<br>4:Drain<br>**----- End of picture text -----**<br>


Note on usage : Since the NDDP010N25AZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

**www.onsemi.com** 

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