# Power MOSFET, N Channel, 600 V, 4.1 A, 1.8 ohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:2533170/) **URL**: https://novapart.co/products/NDD04N60ZT4G/power-mosfet-n-channel-600-v-41-a-18-ohm-to-252 **SKU**: NDD04N60ZT4G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.3270 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Channel Type | N Channel | | Power Dissipation | 83W | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 83W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 1.8ohm | | Transistor Case Style | TO-252 (DPAK) | | Drain Source Voltage Vds | 600V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 4.1A | | Drain Source On State Resistance | 1.8ohm | | Gate Source Threshold Voltage Max | 3.9V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2533170/) NDF04N60Z, NDD04N60Z ## N-Channel Power MOSFET 600 V, 2.0 ## **Features** - Low ON Resistance - Low Gate Charge ## **www.onsemi.com** - ESD Diode−Protected Gate - 100% Avalanche Tested **==> picture [492 x 456] intentionally omitted <==** **----- Start of picture text -----**
|||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |•|These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS|VDSS (@ TJmax)|RDS(on) (MAX) @ 2 A| |Compliant|650 V|2.0|Ω| |[>|[——}-—"_]| |ABSOLUTE MAXIMUM RATINGS|(TC = 25|°|C unless otherwise noted)| |N−Channel| |TOY.|Parameter|Symbol|NDF|NDD|Unit| |D (2)| |Drain−to−Source Voltage|VDSS|600|V| |Continuous Drain Current R|JC (Note 1)|ID|4.8|4.1|A| |Continuous Drain Current R|JC, TA =|ID|3.0|2.6|A| |100|°|C (Note 1)| |ee| |G (1)| |Pulsed Drain Current,|IDM|20|20|A| |VGS @ 10V| |eee| |Power Dissipation R|JC|PD|30|83|W| |a|Cd’|sd’|‘id|e)|S (3)| |Gate−to−Source Voltage|VGS|±|30|V| |Single Pulse Avalanche Energy, ID = 4.0|EAS|120|mJ| |A| |Pe| |ESD (HBM) (JESD22−A114)|Vesd|3000|V| |RMS Isolation Voltage|VISO|4500|−|V| |a|(t = 0.3 sec., R.H.|≤|30%, TA = 25|°|C)|SS| |(Figure 15)| |Peak Diode Recovery (Note 2)|dV/dt|4.5|V/ns| |MOSFET dV/dt|dV/dt|60|V/ns| |aEE|1|v| |a| |Continuous Source Current|IS|4.0|A|2 3| |(Body Diode)| |eo|NDF04N60ZG,| |Maximum Temperature for Soldering|TL|260|°|C|NDF04N60ZH| |Leads|TO−220FP| |i|ee|CASE 221AH| |Operating Junction and|TJ, Tstg|−55 to 150|°|C| |Storage Temperature Range|4| |Stresses exceeding those listed in the Maximum Ratings table may damage the|4| |device. If any of these limits are exceeded, device functionality should not be| |assumed, damage may occur and reliability may be affected.| |1.|Limited by maximum junction temperature|1|1|[2]| |2.|eo|ISD = 4.0 A, di/dt|≤|100 A/|s, VDD|≤|BVDSS, TJ = +150|°|C|®|2 3|f|3|g| |NDD04N60Z−1G|NDD04N60ZT4G| |IPAK|DPAK| |CASE 369D|CASE 369AA| **----- End of picture text -----**
## **ORDERING AND MARKING INFORMATION** See detailed ordering, marking and shipping information on page 6 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2015 **May, 2017 − Rev. 10** **NDF04N60Z/D** **NDF04N60Z, NDD04N60Z** ## **THERMAL RESISTANCE** |**THERMAL RESISTANCE**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case (Drain)
NDF04N60Z
NDD04N60Z|R�JC|4.2
1.5|°C/W| |Junction−to−Ambient Steady State
(Note 3) NDF04N60Z
(Note 4) NDD04N60Z
(Note 3) NDD04N60Z−1|R�JA|50
38
80|| 3. Insertion mounted 4. Surface mounted on FR4 board using 1 ″ sq. pad size (Cu area = 1.127 in sq [2 oz] including traces). ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**Characteristic**|**Test Conditions**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|VGS= 0 V, ID= 1 mA||BVDSS|600|||V| |Breakdown Voltage Temperature Co-
efficient|Reference to 25°C,
ID= 1 mA||�BVDSS/
�TJ||0.6||V/°C| |Drain−to−Source Leakage Current|VDS= 600 V, VGS= 0 V|25°C|IDSS|||1|�A| |||150°C||||50|| |Gate−to−Source Forward Leakage|VGS=±20 V||IGSS|||±10|�A| |**ON CHARACTERISTICS**(Note 5)|||||||| |Static Drain−to−Source
On−Resistance|VGS= 10 V, ID= 2.0 A||RDS(on)||1.8|2.0|�| |Gate Threshold Voltage|VDS= VGS, ID= 50�A||VGS(th)|3.0|3.9|4.5|V| |Forward Transconductance|VDS= 15 V, ID= 2.0 A||gFS||3.3||S| |**DYNAMIC CHARACTERISTICS**|||||||| |Input Capacitance (Note 6)|VDS= 25 V, VGS= 0 V,
f = 1.0 MHz||Ciss|427|535|640|pF| |Output Capacitance (Note 6)|||Coss|50|62|75|| |Reverse Transfer Capacitance
(Note 6)|||Crss|8|14|20|| |Total Gate Charge (Note 6)|VDD= 300 V, ID= 4.0 A,
VGS= 10 V||Qg|10|19|29|nC| |Gate−to−Source Charge (Note 6)|||Qgs|2|3.9|6|| |Gate−to−Drain (“Miller”) Charge|||Qgd|5|10|15|nC| |Plateau Voltage|||VGP||6.5||V| |Gate Resistance|||Rg||4.7||�| |**RESISTIVE SWITCHING CHARACTERISTICS**|||||||| |Turn−On Delay Time|VDD= 300 V, ID= 4.0 A,
VGS= 10 V, RG= 5Ω||td(on)||13||ns| |Rise Time|||tr||9.0||| |Turn−Off Delay Time|||td(off)||24||| |Fall Time|||tf||15||| |**SOURCE−DRAIN DIODE CHARACTERISTICS **(TC= 25°C unless otherwise noted)|||||||| |Diode Forward Voltage|IS= 4.0 A, VGS= 0 V||VSD|||1.6|V| |Reverse Recovery Time|VGS= 0 V, VDD= 30 V
IS= 4.0 A, di/dt = 100 A/�s||trr||285||ns| |Reverse Recovery Charge|||Qrr||1.3||�C| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Width ≤ 380 � s, Duty Cycle ≤ 2%. 6. Guaranteed by design. **www.onsemi.com** **2** **NDF04N60Z, NDD04N60Z** ## **TYPICAL CHARACTERISTICS** **==> picture [241 x 158] intentionally omitted <==** **----- Start of picture text -----**
8
TJ = 25 ° C VGS = 15 V 10 V
7 V
6 6.8 V
6.6 V
4 6.4 V
6.2 V
2 6.0 V
5.8 V
5.6 V
0
0 5 10 15 20 25
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**==> picture [150 x 9] intentionally omitted <==** **----- Start of picture text -----**
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
**----- End of picture text -----**
**Figure 1. On−Region Characteristics** **==> picture [238 x 158] intentionally omitted <==** **----- Start of picture text -----**
8
VDS ≥ 30 V
6
4
TJ = 150 ° C TJ = 25 ° C
2
TJ = −55 ° C
0
3 4 5 6 7 8
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
VGS, GATE−TO−SOURCE VOLTAGE (V) **Figure 2. Transfer Characteristics** **==> picture [491 x 398] intentionally omitted <==** **----- Start of picture text -----**
3.5 3
ID = 2 A TJ = 25 ° C
TJ = 25 ° C
3
2.5
2.5
2 VGS = 10 V
2
1.5
1.5
1 1
5 6 7 8 9 10 0.5 1 1.5 2 2.5 3 3.5 4
VGS (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.6 10,000
ID = 2 A VGS = 0 V
V GS = 10 V
2 TJ = 150 ° C
1000
1.4
100
0.8
TJ = 100 ° C
0.2 10
−50 −25 0 25 50 75 100 125 150 0 100 200 300 400 500 600
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
)
� )
, DRAIN−TO−SOURCE RESISTANCE ( �
, DRAIN−TO−SOURCE RESISTANCE (
DS(on)
R DS(on)
R
, LEAKAGE (nA)
, DRAIN−TO−SOURCE RES- IDSS
ISTANCE (NORMALIZED)
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **www.onsemi.com** **3** **NDF04N60Z, NDD04N60Z** ## **TYPICAL CHARACTERISTICS** **==> picture [493 x 593] intentionally omitted <==** **----- Start of picture text -----**
1200 20 400
VGS = 0 V
1000 TJ = 25 ° C
f = 1.0 MHz 15 QT 300
800
VDS
600 Ciss 10 200
Qgs Qgd
VGS
400
Coss 5 100
200 Crss TJ = 25 ° C
ID = 4 A
0 0 0
0 50 100 150 200 0 5 10 15 20
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100 4
td(off)
VDD = 300 V VGS = 0 V
ID = 4 A tr TJ = 25 ° C
VGS = 10 V tf 3
td(on)
10 2
1
1 0
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
100 100
VGS ≤ 30 V
10 Single PulseTC = 25 ° C 1 ms100 � s 10 � s 10 1 ms 100 � s 10 � s
10 ms
10 ms
dc
dc
1 1
VGS ≤ 30 V
Single Pulse
0.1 0.1 TC = 25 ° C
RDS(on) Limit RDS(on) Limit
Thermal Limit Thermal Limit
Package Limit Package Limit
0.01 0.01
0.1 1 10 100 1000 1 10 100 1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V , DRAIN−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area for NDF04N60Z** **Figure 12. Maximum Rated Forward Biased Safe Operating Area for NDD04N60Z** **www.onsemi.com** **4** **NDF04N60Z, NDD04N60Z** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 174] intentionally omitted <==** **----- Start of picture text -----**
10
50% (DUTY CYCLE)
20%
1.0
10%
5.0%
2.0%
0.1
1.0% R � JC = 4.2 ° C/W
Steady State
SINGLE PULSE
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
PULSE TIME (s)
R(t) (C/W)
**----- End of picture text -----**
**Figure 13. Thermal Impedance for NDF04N60Z** **==> picture [490 x 174] intentionally omitted <==** **----- Start of picture text -----**
10
50% (DUTY CYCLE)
1.0
20%
10%
5.0%
0.1
2.0%
1.0%
0.01 SINGLE PULSE
R � JC = 1.5 ° C/W
Steady State
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
PULSE TIME (s)
R(t) (C/W)
**----- End of picture text -----**
**Figure 14. Thermal Impedance for NDD04N60Z** LEADS **==> picture [41 x 23] intentionally omitted <==** **----- Start of picture text -----**
HEATSINK
0.110 ″ MIN
**----- End of picture text -----**
**Figure 15. Mounting Position for Isolation Test** Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **5** **NDF04N60Z, NDD04N60Z** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Order Number**|**Package**|**Shipping**†| |NDF04N60ZG|TO−220FP
(Pb−Free, Halogen−Free)|50 Units / Rail| |NDF04N60ZH|TO−220FP
(Pb−Free, Halogen−Free)|50 Units / Rail| |NDD04N60Z−1G|IPAK
(Pb−Free, Halogen−Free)|75 Units / Rail| |NDD04N60ZT4G|DPAK
(Pb−Free, Halogen−Free)|2500 / Tape and Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ## **MARKING DIAGRAMS** **==> picture [305 x 219] intentionally omitted <==** **----- Start of picture text -----**
4
Drain
NDF04N60ZG 4
Drain
or
NDF04N60ZH
AYWW
Gate Source
2
1 2 3 1 Drain 3
Gate Drain Source Gate Source
Drain
TO−220FP IPAK DPAK
A = Location Code*
Y = Year
WW = Work Week
G, H = Pb−Free, Halogen−Free Package
AYWW 4N 60ZG
AYWW 4N 60ZG
**----- End of picture text -----**
* The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. **www.onsemi.com** **6** **NDF04N60Z, NDD04N60Z** ## **PACKAGE DIMENSIONS** **TO−220 FULLPACK, 3−LEAD** CASE 221AH ISSUE F **==> picture [294 x 164] intentionally omitted <==** **----- Start of picture text -----**
A B SEATINGPLANE NOTES:1.
E
E/2 P A 2.
0.14 M B A M H1 A1 3.4.
Q
D C 5.
1 2 3 NOTE 3 6.
L L1
3X b c
3X b2 0.25 M B A M C A2
e SIDE VIEW
**----- End of picture text -----**
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. - CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. |6.|CONT
MAY V
AND H|**MIN**
**MAX**
**MILLIMETERS**
14.70
15.30
9.70
10.30
4.30
4.70
0.54
0.84
3.00
3.40
---
2.80
0.49
0.79
12.50
14.73
1.10
1.40
2.80
3.20
2.50
2.90
2.50
2.90
6.60
7.10
OURS AND FEATURES OF THE MOLDED PACKAGE BODY
ARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
1 FOR MANUFACTURING PURPOSES.
2.54 BSC|**MIN**
**MAX**
**MILLIMETERS**
14.70
15.30
9.70
10.30
4.30
4.70
0.54
0.84
3.00
3.40
---
2.80
0.49
0.79
12.50
14.73
1.10
1.40
2.80
3.20
2.50
2.90
2.50
2.90
6.60
7.10
OURS AND FEATURES OF THE MOLDED PACKAGE BODY
ARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
1 FOR MANUFACTURING PURPOSES.
2.54 BSC| |---|---|---|---| ||**DIM**|**MILLIMETERS**|| |||**MIN**|**MAX**| ||**A**
|4.30
|4.70
| ||**A1**|2.50|2.90| ||**A2**|250|290| ||**b**

|0.54

.|0.84

.| ||**c**
**b2**|0.49
1.10|0.79
1.40| ||**D**|14.70|15.30| ||**E**|9.70|10.30| ||**e**|2.54 BSC|| ||**H1**|6.60|7.10| ||**L**|12.50|14.73| ||**L1**|---|2.80| ||**P**|3.00|3.40| ||**Q**|2.80|3.20| **FRONT VIEW** **==> picture [54 x 7] intentionally omitted <==** **----- Start of picture text -----**
SECTION D−D
**----- End of picture text -----**
**==> picture [211 x 114] intentionally omitted <==** **----- Start of picture text -----**
A
NOTE 6
NOTE 6
H1
D D
A SECTION A−A
**----- End of picture text -----**
**==> picture [115 x 7] intentionally omitted <==** **----- Start of picture text -----**
ALTERNATE CONSTRUCTION
**----- End of picture text -----**
**www.onsemi.com** **7** **NDF04N60Z, NDD04N60Z** ## **PACKAGE DIMENSIONS** **IPAK** CASE 369D ISSUE C **==> picture [283 x 174] intentionally omitted <==** **----- Start of picture text -----**
B C
V R E
4
Z
A
S
1 2 3
−T−
SEATING
PLANE K
J
F
H
D 3 PL
G 0.13 (0.005) M T
**----- End of picture text -----**
**==> picture [132 x 188] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
G 0.090 BSC 2.29 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
**----- End of picture text -----**
**www.onsemi.com** **8** **NDF04N60Z, NDD04N60Z** ## **PACKAGE DIMENSIONS** **==> picture [467 x 453] intentionally omitted <==** **----- Start of picture text -----**
DPAK (SINGLE GAUGE)
CASE 369AA
ISSUE B
NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
E A 2.3. CONTROLLING DIMENSION: INCHES.THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
L3 4 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THEOUTERMOST EXTREMES OF THE PLASTIC BODY.
1 2 3 D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMPLANE H.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
L4 HF a A 0.086 0.094 2.18 2.38
b2 A1 0.000 0.005 0.00 0.13
b c b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
eewa L2 [GAUGE] PLANE a C SEATINGPLANE =oo= c2D 0.0180.235 0.0240.245 0.465.97 0.616.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
L A1 HL 0.0550.370 0.0700.410 1.409.40 10.411.78
Rp L1 P? GSSSE L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
DETAIL A L3 0.035 0.050 0.89 1.27
ROTATED 9 CW L4 −−− 0.040 −−− 1.01
a a Z 0.155 −−− 3.93 −−−
STYLE 2:
SOLDERING FOOTPRINT* PIN 1. GATE
2. DRAIN
6.20 3.00 3.4. SOURCEDRAIN
0.244 0.118
2.58
Eh
0.102
7 i
5.80
1.60 6.17
0.228
0.063 0.243
LIS:
SCALE 3:1 mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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