# Power MOSFET, N Channel, 60 V, 48 A, 0.025 ohm, TO-263AB, Surface Mount ![Product image](https://novapart.co/image/farnell:1017723/) **URL**: https://novapart.co/products/NDB6060L/power-mosfet-n-channel-60-v-48-a-0025-ohm-to-263ab **SKU**: NDB6060L **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.8480 **Stock**: 10+ ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 100W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-263AB | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 48A | | Drain Source On State Resistance | 0.025ohm | | Gate Source Threshold Voltage Max | 2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1017723/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. April 1996 ## **NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor** ## **General Description** ## **Features** These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. - 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. - Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. - Critical DC electrical parameters specified at elevated temperature. - Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. - 175°C maximum junction temperature rating. - High density cell design for extremely low RDS(ON). - TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ## ________________________________________________________________________________ **==> picture [54 x 95] intentionally omitted <==** **----- Start of picture text -----**
D
G
S
**----- End of picture text -----**
|**Absolute Maximum Ratings**
TC= 25°C unless otherwise noted|= 25°C unless otherwise noted|| |---|---|---| |**Parameter**|**NDP6060L**|**NDB6060L**| |Drain-Source Voltage|60|| |Drain-Gate Voltage (RGS <
1 MΩ)|60|| |Gate-Source Voltage - Continuous
- Nonrepetitive (tP< 50 µs)|± 16|| ||± 25|| |Drain Current
- Continuous
- Pulsed|48|| ||144|| |Total Power Dissipation @ TC= 25**°**C
Derate above 25**°**C|100|| ||0.67|| |Operating and Storage Temperature|-65 to 175|| |Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds|275|| © 1997 Fairchild Semiconductor Corporation NDP6060L Rev. D / NDB6060L Rev. E **Electrical Characteristics** (TC = 25°C unless otherwise noted) |**Electric**|**al Characteristics **(TC= 25°C unl|ess otherwise noted)|||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Units**| |**DRAIN-SOURCE AVALANCHE RATINGS** (Note 1)|||||||| |WDSS|Single Pulse Drain-Source Avalanche
Energy|VDD= 25 V, ID= 48 A||||200|mJ| |IAR|Maximum Drain-Source Avalanche Current|||||48|A| |**OFF CHARACTERISTICS**|||||||| |BVDSS|Drain-Source Breakdown Voltage|VGS= 0 V, ID= 250 µA||60|||V| |IDSS|Zero Gate Voltage Drain Current|VDS= 60 V, VGS= 0 V||||250|µA| ||||TJ= 125°C|||1|mA| |IGSSF|Gate - Body Leakage, Forward|VGS= 16 V, VDS= 0 V||||100|nA| |IGSSR|Gate - Body Leakage, Reverse|VGS= -16 V, VDS= 0 V||||-100|nA| |**ON CHARACTERISTICS**(Note 1)|||||||| |VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250 µA||1||2|V| ||||TJ= 125°C|0.65||1.5|| |RDS(ON)|Static Drain-Source On-Resistance|VGS= 5 V, ID= 24 A||||0.025|Ω| ||||TJ= 125°C|||0.04|| |||VGS= 10 V, ID= 24 A||||0.02|| |ID(on)|On-State Drain Current|VGS= 5 V, VDS= 10 V||48|||A| |gFS|Forward Transconductance|VDS= 10 V, ID= 24 A||10|||S| |**DYNAMIC CHARACTERISTICS**|||||||| |Ciss|Input Capacitance|VDS= 25 V, VGS= 0 V,
f = 1.0 MHz|||1630|2000|pF| |Coss|Output Capacitance||||460|800|pF| |Crss|Reverse Transfer Capacitance||||150|400|pF| |**SWITCHING CHARACTERISTICS**(Note 1)|||||||| |tD(on)|Turn - On Delay Time|VDD= 30 V, ID= 48 A,
VGS= 5 V, RGEN= 15Ω,
RGS= 15Ω|||15|30|nS| |tr|Turn - On Rise Time||||320|500|nS| |tD(off)|Turn - Off Delay Time||||49|100|nS| |tf|Turn - Off Fall Time||||161|300|nS| |Qg|Total Gate Charge|VDS= 48 V,
ID= 48 A, VGS= 5 V|||36|60|nC| |Qgs|Gate-Source Charge||||8.2||nC| |Qgd|Gate-Drain Charge||||21||nC| NDP6060L Rev. D / NDB6060L Rev. E **Electrical Characteristics** (TC = 25°C unless otherwise noted) |**Electric**|**al Characteristics **(TC= 25°C unless|otherwise noted)|||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Units**| |**DRAIN-SOURCE DIODE CHARACTERISTICS**|||||||| |IS|Maximum Continuos Drain-Source Diode Forward Current|||||48|A| |ISM|Maximum Pulsed Drain-Source Diode Forward Current|||||144|A| |VSD|Drain-Source Diode Forward Voltage|VGS= 0 V, IS= 24 A(Note 1)||||1.3|V| ||||TJ= 125°C|||1.2|| |trr
Irr|Reverse Recovery Time
Reverse Recovery Current|VGS= 0 V, IF= 48 A,
dIF/dt = 100 A/µs||35
2|75
3.6|140
8|ns
A| |**THERMAL**|**CHARACTERISTICS**||||||| |RθJC|Thermal Resistance, Junction-to-Case|||||1.5|**°**C/W| |RθJA|Thermal Resistance, Junction-to-Ambient|||||62.5|**°**C/W| Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP6060L Rev. D / NDB6060L Rev. E ## **Typical Electrical Characteristics** **==> picture [452 x 551] intentionally omitted <==** **----- Start of picture text -----**
100 2
V = 10VGS 6.0 V = 3.0VGS
80 5.0 3.5
4.5 4.0
1 .5
60 4.5
4.0
5.0
40 3.5 5.5
1 6.0
20 3.0 10
2.5
0 0 .5
0 1 2 3 4 5 0 20 40 60 80 100
V , DRAIN-SOURCE VOLTAGE (V)DS I , DRAIN CURRENT (A)D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2 2
1.75 V = 5V I = 24ADGS 1.8 V = 5.0V GS T = 125°CJ
1.6
1.5
1.4
1.25
25°C
1.2
1
1
0.75 0.8 -55°C
0.5-50 -25 0 25 50 75 100 125 150 175 0.6 0 20 40 60 80 100
T , JUNCTION TEMPERATURE (°C)J I , DRAIN CURRENT (A)D
Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain
with Temperature. Current and Temperature.
60 1.3
50 V = 10VDS T = -55°CJ 25°C 1.2 I = 250µADV = VDS GS
125°C 1.1
40
1
30 0.9
0.8
20
0.7
10
0.6
0 0.5
1 2 3 4 5 -50 -25 0 25 50 75 100 125 150 175
V , GATE TO SOURCE VOLTAGE (V)GS T , JUNCTION TEMPERATURE (°C)J
Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with
DS(on)
R , NORMALIZED
I , DRAIN-SOURCE CURRENT (A)D DRAIN-SOURCE ON-RESISTANCE
DS(ON) DS(on)
R , NORMALIZED R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE
GS(th)
I , DRAIN CURRENT (A) V , NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
D
**----- End of picture text -----**
**Figure 6. Gate Threshold Variation with Temperature.** NDP6060L Rev. D / NDB6060L Rev. E ## **Typical Electrical Characteristics (continued)** **==> picture [446 x 527] intentionally omitted <==** **----- Start of picture text -----**
1.15 80
I = 250µAD
1.1 10 T = 125J °C
25°C
1
1.05 -55°C
0.1
1
0.01
0.95
0.001
V = 0VGS
0.9
-50 -25 0 25 50 75 100 125 150 175 0.0001
T , JUNCTION TEMPERATURE (°C)J 0.2 0.4 V , BODY DIODE FORWARD VOLTAGE (V)SD 0.6 0.8 1 1.2 1.4 1.6 1.8
Figure 7. Breakdown Voltage Variation with Figure 8. Body Diode Forward Voltage
Temperature. Variation with Current and Temperature .
4000 10
3000 I = 48AD V = 12VDS
48V
2000 C iss 8
24V
1000 6
500 C oss
4
300 f = 1 MHz
200 V = 0VGS 2
C rss
100 0
1 2 3 5 10 20 30 50 0 20 40 60 80
V , DRAIN TO SOURCE VOLTAGE (V)DS Q , GATE CHARGE (nC)g
Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics .
VDD t on toff
t d(on) t r t d(off) t f
VIN R L 90% 90%
D V
OUT
V
VGEN OUT 10% 10%
R GEN G DUT INVERTED
90%
RGS S V IN 50% 50%
10%
PULSE W IDTH
BV , NORMALIZED
I , REVERSE DRAIN CURRENT (A)
DRAIN-SOURCE BREAKDOWN VOLTAGE
CAPACITANCE (pF)
GS
V , GATE-SOURCE VOLTAGE (V)
DSS
S
**----- End of picture text -----**
**Figure 11. Switching Test Circuit** . **Figure 12. Switching Waveforms.** NDP6060L Rev. D / NDB6060L Rev. E ## **Typical Electrical Characteristics (continued)** **==> picture [453 x 366] intentionally omitted <==** **----- Start of picture text -----**
40 300
T = -55°CJ 200
100
25°C
30
50
125°C
20
20
10 V = 5VGS
5 SINGLE PULSE
10 R = 1.5 C/W θ [JC] o
2 T = 25 C °C
V =10VDS
0 1
0 10 20 30 40 1 2 3 5 10 20 30 60 100
I , DRAIN CURRENT (A)D V , DRAIN-SOURCE VOLTAGE (V)DS
Figure 13. Transconductance Variation with Figure 14. Maximum Safe Operating. Area
Drain Current. and Temperature
1
D = 0.5
0.5
0.3
0.2 R (t) = r(t) * R θJC θJC
0.2 R = 1.5 °C/W θJC
0.1
0.1
0.05 P(pk)
0.05 0.02 t 1 t 2
0.03
0.01 Single Pulse T - T = P * R (t)J C θJC
0.02
Duty Cycle, D = t /t1 2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
t ,TIME (m s)1
10µs
RDS(ON) Lim it 100µs
1ms
10ms
100ms
DC
I , DRAIN CURRENT (A)D
g , TRANSCONDUCTANCE (SIEMENS)FS
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
**----- End of picture text -----**
**Figure 15. Transient Thermal Response Curve.** NDP6060L Rev. D / NDB6060L Rev. E **==> picture [434 x 589] intentionally omitted <==** **----- Start of picture text -----**
TO-220 Tape and Reel Data and Package Dimensions
TO-220 Tube Packing
Configuration: Figur e 1.0
Packaging Description:
TO-220 parts are shipped normally in tube. The tube is
made of PVC plastic treated with anti-static agent.These
tubes in standard option are placed inside a dissipative
45 units per Tube plastic bag, barcode labeled, and placed inside a boxmade of recyclable corrugated paper. One box contains
two bags maximum (see fig. 1.0). And one or several of
these boxes are placed inside a labeled shipping box
which comes in different sizes dependi ng on the number
of parts shipped. The other option comes in bulk as
described in the Packaging Information table. The units in
this option are placed inside a small box laid w ith anti-
static bubble sheet. These smaller boxes are individually
12 Tubes per Bag labeled and placed inside a larger box (see fig. 3.0).These larger or intermediate boxes then will be placed
finally inside a labeled shipping box which still comes in
different sizes depending on the number of units shipped.
a Faw
530mm x 130mm x 83mm
Intermediate box
2 bags per Box
Conduct ive Plastic Bag
TO-220 Packaging FSCINT Label sample
Information: Figure 2.0 > il LOT: CBVK741B019 FAIRCHILD SEMICONDUCTOR CORPORATION QTY: 1080HTB:B
1080 uni ts maximum
TO-220 Packaging Information quantity per box NSID: FDP7060 SPEC:
Packaging OptionPackaging type (noRail/TubeStandardflow code) BULKS62Z D/C1: D9842 SPEC REV: QA REV: B2
Qty per Tube/BoxBox Dimension (mm) 530x130x8345 114x102x51300 FSCINT Label (FSCINT)
Max qty per Box 1,080 1,500
Weight per unit (gm) 1.4378 1.4378
Note/Comments
TO-220 bulk Packing
Configuration: Figure 3.0
Anti-static
530mm x 130mm x 83mm
FSCINT Label Bubbl e Sheets Intermediate box
1500 uni ts maximum
quantity per intermediate box
300 units per 5 EO70 boxe s per per
EO70 box Intermediate Box
114mm x 102mm x 51mm
EO70 Immediate Box FSCINT Label
TO-220 Tube
0.123
Configuration: Figure 4.0 +0.001 0.165
-0.003
Note: All dim ensions are in inches 0.080
0.450 0.275
NDP4060LF9852 NDP4060LF9852 NDP4060LF9852 NDP4060LF9852 NDP4060LF9852 NDP4060LF9852 NDP4060LF9852 NDP4060LF9852 NDP4060LF9852 NDP4060LF9852 NDP4060LF9852 FNDP4060L9852 ±.030 1.300 ae
±.015 0.032 0.160
±.003
20.000
+0.031 0.800 _ — s
-0.065 0.275
**----- End of picture text -----**
August 1999, Rev. B ## **TO-220 Tape and Reel Data and Package Dimensions, continued** **==> picture [292 x 202] intentionally omitted <==** **----- Start of picture text -----**
TO-220 (FS PKG Code 37)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
**----- End of picture text -----**
September 1998, Rev. A **==> picture [289 x 25] intentionally omitted <==** **----- Start of picture text -----**
TO-263AB/D [2] PAK Tape and Reel Data and Package
Dimensions
**----- End of picture text -----**
**==> picture [436 x 581] intentionally omitted <==** **----- Start of picture text -----**
TO-263AB/D [2] PAK Packaging
Configuration: Figure 1.0
Es
EAIRCHILD
Packaging Description:
: ELECTRO M AGN ETI C, M AG NETIC O R R ADIO ACTIVE FI ELD SDO NO T SHI P OR STO RE N EAR STRO NG ELECTROSTATIC SEN SITIVE DEVICESELECTROSTATIC TO-263/Dis made from a dissipative (carbon filled) polycarbonate [2] PAK parts are shipped in tape. The carrier tape
ESD Label TNR DATEPT NUMBERPEEL STRENGTH MIN ______________gms MAX _____________ gms Antistatic Cover Tape resin. The cover tape is a multilayer film (Heat ActivatedAdhesive in nature) primarily composed of polyester film,adhesive layer, sealant, and anti-static sprayed agent.These reeled parts in standard option are shipped with800 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
SE static coated). This and some other options are further
described in the Packaging Information table.
SS — ee
These full reels are individually barcode labeled, dry
packed, and placed inside a standard intermediate box
(illustrated in figure 1.0) made of recyclable corrugated
brown paper. One box contains one reel maximum. And
ST. CAUTION << = — these boxes are placed inside a barcode labeled shippingbox which comes in different sizes depending on thenumber of parts shipped.
=I [=e] Static Dissipative Z me
Embossed Carrier Tape
w a = Moisture Sensitive QO.
Label
F63TNR
Label
Customized
Label
= =
TO-263AB/D [2] PAK Packaging Information
Packaging Option (no flow code)Standard L86Z TO-263AB/D [2] PAK Unit Orientation
Packaging type TNR Rail/Tube
Qty per Reel/Tube/Bag 800 45
Reel Size 13" Dia -
Box Dimension (mm) 359x359x57 530x130x83
Max qty per Box 800 1,080
Weight per unit (gm) 1.4378 1.4378 359mm x 359mm x 57mm
Weight per Reel 1.6050 - Standard Intermediate box
Note/Comments ESD Label
Moisture Sensitive
Label
F63TNR Label sample
F63T NR Label
LOT: CBVK741B019 QTY: 80 0
FSID: FDB6320L HOON SPEC: WM A ——_or
INO —, DRYPACK Bag
D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:
N/F: F (F63TNR)3
TO-263AB/D [2] PAK Tape Leader and Trailer
Configuration: Figure 2.0
j oo o tpo olo olk lo olood g f co00 0
A eee [a
Carrier Tape
S , soAl Ureres is monnach Usockos — cM esdessW 0 Voocane PA derenee eceeec eon
Cover Tape Trailer Tape Components Leader Tape
400mm minimum or 1520mm minimum or
25 empty pockets 95 empty pockets
FDB603AL L FDB603A FDB603AL FDB603AL
F9835 F9835 F9835 F9835
**----- End of picture text -----**
September 1999, Rev. B ## **TO-263AB/D[2] PAK Tape and Reel Data and Package Dimensions, continued** **==> picture [428 x 609] intentionally omitted <==** **----- Start of picture text -----**
TO-263AB/D [2] PAK Embossed Carrier Tape
Configuration: Figure 3.0 P0 D0
T
E1
F
K0 E2 W
Wc B0
Tc
A0 P1 D1
User Direction of Feed
Dimensions are in millimeter
Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
TO263AB/
D [2] PAK 10.60+/-0.10 15.80+/-0.10 24.0+/-0.3 1.55+/-0.05 1.60+/-0.10 1.75+/-0.10 22.25min 11.50+/-0.10 16.0+/-0.1 4.0+/-0.1 4.90+/-0.10 0.450+/-0.150 21.0+/-0.3 0.06+/-0.02
(24mm)
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C). 0.9mm
10 deg maximum maximum
Typical
component
cavity 0.9mm
B0 center line maximum
10 deg maximum component rotation
Typical
Sketch A (Side or Front Sectional View) Component Rotation A0 componentcenter line Sketch C (Top View) Component lateral movement
Sketch B (Top View)
TO-263AB/D [2] PAK Reel Configuration: Component Rotation
Figure 4.0
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim A
max Dim N Dim D
min
DETAIL AA
See detail AA
W3
13" Diameter Option W2 max Measured at Hub
Dimensions are in inches and millimeters
Reel
Tape Size Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
Option
24mm 13" Dia 13.00330 0.0591.5 512 +0.020/-0.00813 +0.5/-0.2 0.79520.2 4.00100 0.961 +0.078/-0.00024.4 +2/0 1.19730.4 0.941 – 0.1.07923.9 – 27.4
**----- End of picture text -----**
August 1999, Rev. B **==> picture [424 x 253] intentionally omitted <==** **----- Start of picture text -----**
TO-263AB/D [2] PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D [2] PAK (FS PKG Code 45)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
**----- End of picture text -----**
August 1998, Rev. A ## **TRADEMARKS** The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. |ACEx™|ISOPLANAR™|SyncFET™| |---|---|---| |CoolFET™|MICROWIRE™|TinyLogic™| |CROSSVOLT™|POP™|UHC™| |E2CMOSTM|PowerTrench
|VCX™| |FACT™|QFET™|| |FACT Quiet Series™|QS™|| |FAST®|Quiet Series™|| |FASTr™|SuperSOT™-3|| |GTO™|SuperSOT™-6|| |HiSeC™|SuperSOT™-8|| ## **DISCLAIMER** FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ## **LIFE SUPPORT POLICY** FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. ## **PRODUCT STATUS DEFINITIONS** ## **Definition of Terms** |**Definition of Terms**||| |---|---|---| |**Datasheet Identification**|**Product Status**|**Definition**| |Advance Information|Formative or
In Design|This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.| |Preliminary|First Production|This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.| |No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.| |Obsolete|Not In Production|This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
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