# Power Load Distribution Switch, Low Side, 1 Output, 13A, 0.055ohm, TO-252-3 ![Product image](https://novapart.co/image/farnell:2851440/) **URL**: https://novapart.co/products/NCV8408BDTRKG/power-load-distribution-switch-low-side-1-output **SKU**: NCV8408BDTRKG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.3780 **Stock**: 1000+ **Lead Time**: 127 days (indicative) ## Description Power Load Switch Type:Low Side; Input Voltage:-; Current Limit:13A; On State Resistance:0.055ohm; Distribution Switch Case Style:TO-252; No. of Pins:3Pins; Thermal Protection:Yes ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Current Limit | 13A | | Product Range | - | | Qualification | AEC-Q101 | | No. Of Outputs | 1Outputs | | No. Of Channels | 1Channels | | Ic Case / Package | TO-252 (DPAK) | | Thermal Protection | Yes | | On State Resistance | 0.055ohm | | Power Load Switch Type | Low Side | | Operating Temperature Max | 150°C | | Operating Temperature Min | -40°C | | Distribution Switch Case Style | TO-252 (DPAK) | | Automotive Qualification Standard | AEC-Q101 | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2851440/) ## NCV8408, NCV8408B ## Self-Protected Low Side Driver with Temperature and Current Limit **42 V, 10 A, Single N−Channel, DPAK** NCV8408/B is a single channel protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. Thermal protection includes a latch which can be reset by toggling the input. This device is suitable for harsh automotive environments. ## **Features** - Short Circuit Protection - Thermal Shutdown with Latched Reset - Gate Input Current Flag During Latched Fault Condition - Overvoltage Protection - Integrated Clamp for Inductive Switching - ESD Protection - dV/dt Robustness - Analog Drive Capability (Logic Level Input) - NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Typical Applications** - Switch a Variety of Resistive, Inductive and Capacitive Loads - Can Replace Electromechanical Relays and Discrete Circuits - Automotive / Industrial **==> picture [168 x 60] intentionally omitted <==** **----- Start of picture text -----**
www.onsemi.com
VDSS ID MAX
(Clamped) RDS(on) TYP (Limited)
42 V 55 m @ 5 V 10 A
**----- End of picture text -----**
**==> picture [191 x 448] intentionally omitted <==** **----- Start of picture text -----**
Drain (2,4)
Overvoltage
Gate Protection
Input (1)
ESD Protection
Temperature Current Current
Limit Limit Sense
Source (3)
4 MARKING
DIAGRAM
1 [2]
3 Gate
YWW
DPAK Drain Drain
xxxxxG
CASE 369C
Source
® STYLE 2 4)
Y = Year
WW = Work Week
xxxxx = V8408 or 8408B
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping [†]
NCV8408DTRKG DPAK 2500/Tape & Reel
(Pb−Free)
NCV8408BDTRKG DPAK 2500/Tape & Reel
(Pb−Free)
==
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
**----- End of picture text -----**
Publication Order Number: **NCV8408/D** **1** © Semiconductor Components Industries, LLC, 2016 **November, 2016 − Rev. 6** ## **NCV8408, NCV8408B** ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) |**MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted)|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Drain−to−Source Voltage Internally Clamped|VDSS|42|Vdc| |Drain−to−Gate Voltage Internally Clamped
(RGS= 1.0 M�)|VDGR|42|V| |Gate−to−Source Voltage|VGS|±14|Vdc| |Continuous Drain Current|ID|Internally Limited|| |Gate Input Current (VGS=±14 VDC)|IGS|±10|mA| |Source to Drain Current|ISD|4.0|A| |Total Power Dissipation
@ TA= 25°C (Note 1)
@ TA= 25°C (Note 2)|PD|1.8
2.3|W| |Thermal Resistance
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Tab Steady State (Note 3)|R�JA
R�JA
R�JT|70
55
2.1|°C/W| |Single Pulse Inductive Load Switching Energy
(VDD= 20 Vdc, VGS= 5.0 V, IL= 8.0 A)
Repetitive Pulse Inductive Load Switching Energy
(VDD= 20 Vdc, VGS= 5.0 V, IL= 8.0 A, TJ= 25°C)
Repetitive Pulse Inductive Load Switching Energy
(VDD= 20 Vdc, VGS= 5.0 V, IL= 6.8 A, TJ= 105°C)|EAS
EAR
EAR|185
128
92|mJ| |Load Dump Voltage (VGS= 0 and 10 V, RI= 2.0�, RL= 4.5�, td= 400 ms, TJ= 25°C)|VLD|63|V| |Operating Junction Temperature|TJ|−40 to 150|°C| |Storage Temperature|Tstg|−55 to 150|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted onto minimum pad FR4 PCB (1 oz Cu, 0.06” thick). 2. Surface−mounted onto 2 ″ square FR4 PCB, (1 ″ square, 1 oz Cu, 0.06” thick). 3. Surface−mounted onto minimum pad FR4 PCB (2 oz Cu, 0.06” thick). **==> picture [289 x 193] intentionally omitted <==** **----- Start of picture text -----**
+
ID
DRAIN
IG
VDS
+ GATE
SOURCE
VGS
IS
− −
**----- End of picture text -----**
**Figure 1. Voltage and Current Convention** **www.onsemi.com** **2** **NCV8408, NCV8408B** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**|(TJ= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---|---| |**Characteristic**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||| |Drain−to−Source Clamped Breakdown Voltage (Note 4)
(VGS= 0 V, ID= 10 mA, TJ= 25°C)
(VGS= 0 V, ID= 10 mA, TJ= 150°C) (Note 6)
(VGS= 0 V, ID= 10 mA, TJ= −40°C) (Note 6)||V(BR)DSS|42
40
43|46
45
47|51
51
51|V| |Zero Gate Voltage Drain Current
(VGS= 0 V, VDS= 32 V, TJ= 25°C)
(VGS= 0 V, VDS= 32 V, TJ= 150°C) (Note 6)||IDSS|−
−|0.6
2.5|5.0
10|�A| |**INPUT CHARACTERISTICS**(Note 4)||||||| |Gate Input Current − Normal Operation|(VGS= 5.0 V)|IGSSF|−|25|50|�A| |Gate Input Current − Protection Latched|(VGS= 5.0 V) (Note 6)|IGSSL|−|440|−|�A| |Gate Threshold Voltage|(VGS= VDS, ID= 1 mA)|VGS(th)|1.0|1.7|2.2|V| |Gate Threshold Temperature Coefficient||VGS(th)/TJ|−|5.0|−|−mV/°C| |Latched Reset Voltage|(Note 6)|VLR|0.8|1.4|1.9|V| |Latched Reset Time|(VGS= 5.0 V to VGS< 1 V) (Note 6)|tLR|10|40|100|�s| |Internal Gate Input Resistance|||−|25.5|−|k�| |**ON CHARACTERISTICS**(Note 4)||||||| |Static Drain−to−Source On−Resistance
(VGS= 5.0 V, ID= 3.0 A, TJ@ 25°C)
(VGS= 5.0 V, ID= 3.0 A, TJ@ 150°C) (Note 6)||RDS(on)|−
−|55
100|60
120|m�| |Source−Drain Forward On Voltage|(VGS= 0 V, IS= 7.0 A)|VSD|−|0.95|−|V| |**SWITCHING CHARACTERISTICS**(Note 6)||||||| |Turn−OFF/ON Slew Rate Matching|VGS= 5.0 V, VDS= 13 V, RL= 4�;
TJ= −40°C
TJ= 150°C
TJ= 25°C
−40°C < TJ< 150°C|TMatch|−15
−15
−5
−20|−
−
−
−|15
15
5
20|%| |Turn−ON Delay Time|VGS= 5 V, VDS= 13 V
RL= 4�, −40°C < TJ< 150°C|td(ON)||10|20|**�s**| |Rise Time (10% IDto 90% ID)||tr||20|40|| |Turn−OFF Delay Time||td(OFF)||30|60|| |Fall Time (90% IDto 10% ID)||tf||20|40|| |Slew−Rate ON (90% VDto 10% VD)||−dVDS/dtON||0.5||V��s| |Slew−Rate OFF (10% VDto 90% VD)||dVDS/dtOFF||0.5||| |**SELF PROTECTION CHARACTERISTICS **(TJ= 25°C unless otherwise noted) (Note 5)||||||| |Current Limit
VGS= 5.0 V, VDS= 10 V, TJ@ 25°C
VGS= 5.0 V, VDS= 10 V, TJ= 150°C (Note 6)
VGS= 5.0 V, VDS= 10 V, TJ= −40°C (Note 6)||ILIM|10
10
9|13
−
−|16
18
16|A| |Temperature Limit (Turn−off)|VGS= 5.0 V
VGS= 10 V|TLIM(off)|150
150|175
165|200
185|°C| |**ESD ELECTRICAL CHARACTERISTICS **(TJ= 25°C unless otherwise noted)||||||| |Electro−Static Discharge Capability|Human Body Model (HBM)|ESD|4000|−|−|V| |Electro−Static Discharge Capability|Machine Model (MM)|ESD|400|−|−|V| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width = 300 � s, Duty Cycle = 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part. 6. Not subject to production testing. **www.onsemi.com** **3** **NCV8408, NCV8408B** ## **TEST CIRCUITS AND WAVEFORMS** **==> picture [316 x 208] intentionally omitted <==** **----- Start of picture text -----**
RL 4 �
ID
VIN
5 V D +
VDD 13 V
G −
0 V
S
**----- End of picture text -----**
**Figure 2. Resistive Load Switching Test Circuit** **==> picture [335 x 273] intentionally omitted <==** **----- Start of picture text -----**
90%
VIN
10%
td(ON) tr
td(OFF)
tf
90%
ID
10%
90%
VDS
10%
**----- End of picture text -----**
**Figure 3. Resistive Load Switching Waveforms** **www.onsemi.com** **4** **NCV8408, NCV8408B** ## **TEST CIRCUITS AND WAVEFORMS** **==> picture [252 x 223] intentionally omitted <==** **----- Start of picture text -----**
L
VDS
VIN
D +
VDD
G DUT −
S
tp
**----- End of picture text -----**
**Figure 4. Inductive Load Switching Test Circuit** **==> picture [330 x 332] intentionally omitted <==** **----- Start of picture text -----**
VIN
Tp Tav
V(BR)DSS
VDS
VDS(on)
Ipk
ID
**----- End of picture text -----**
**Figure 5. Inductive Load Switching Waveforms** **www.onsemi.com** **5** **NCV8408, NCV8408B** **==> picture [13 x 247] intentionally omitted <==** **----- Start of picture text -----**
VIN
IG
ID
TJ
**----- End of picture text -----**
**Figure 6. Short−Circuit Protection Behavior** **Figure 7. Turn on into Short Circuit Device Response** **www.onsemi.com** **6** **NCV8408, NCV8408B** ## **TYPICAL CHARACTERISTICS** **==> picture [493 x 603] intentionally omitted <==** **----- Start of picture text -----**
1000 10
VDD = 20 V VDD = 20 V
25 ° C
25 ° C
150 ° C
150 ° C
100 1
10 100 10 100
INDUCTANCE (mH) INDUCTANCE (mH)
Figure 8. NCV8408 Maximum Switch Off Figure 9. NCV8408 Maximum Switch Off
Energy vs Inductance Current vs Inductance
600 18
ID = 3 A 16 150 ° C
500
14
400 12
125 ° C −40 ° C
10
300 25 ° C
8
150 ° C
200 125 ° C 6
25 ° C 4
100
−40 ° C 2
0 0
2 4 6 8 10 12 5 6 7 8 9 10
VGS (V) VGS (V)
Figure 10. VGS vs VDS Figure 11. Current Limit vs. Gate Voltage
18 200
6 V 9 V 7 V 8 V
16 180 ID = 3 A
14 160
5 V 140
12 10 V
120
10
4 V 100
8
3 V 80 150 ° C
6
60 125 ° C
4 40 25 ° C
2 VGS = 2.5 V 20 −40 ° C
0 0
0 2 4 6 8 10 2 4 6 8 10 12
VDS (V) VGS (V)
ENERGY (mJ) CURRENT (A)
(V) (A)
VDS ILIM
) �
(m
(A)
ID
DS(on)
R
**----- End of picture text -----**
**Figure 12. Drain Current vs. Drain Voltage** **Figure 13. RDS(on) vs. Gate Voltage** **www.onsemi.com** **7** **NCV8408, NCV8408B** ## **TYPICAL CHARACTERISTICS** **==> picture [239 x 173] intentionally omitted <==** **----- Start of picture text -----**
120
100
80
tr
60
40 t d(off)
tf
20
td(on)
0
2 3 4 5 6 7 8 9 10
VGS (V)
s)
�
TIME (
**----- End of picture text -----**
**Figure 14. Resistive Switching** **==> picture [246 x 172] intentionally omitted <==** **----- Start of picture text -----**
180
160 TA = 25 ° C
140
120
100
� JA curve with PCB cu thk 1
80
60
� JA curve with PCB cu thk 2
40
20
0
0 100 200 300 400 500 600 700
COPPER HEAT SPREADER AREA (mm [2] )
C/W)
°
JA (
�
**----- End of picture text -----**
**Figure 15. R � JA vs. Copper Area** **==> picture [495 x 172] intentionally omitted <==** **----- Start of picture text -----**
100
Duty Cycle = 50%
20%
10
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (s)
C/W)
°
R(t) (
**----- End of picture text -----**
**Figure 16. Transient Thermal Resistance** **www.onsemi.com** **8** **NCV8408, NCV8408B** ## **PACKAGE DIMENSIONS** **==> picture [104 x 29] intentionally omitted <==** **----- Start of picture text -----**
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
**----- End of picture text -----**
**==> picture [481 x 429] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 hie Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.
L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L L3 0.035 0.050 0.89 1.27
A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01
pip L1 e OO CONSTRUCTIONSALTERNATE Z 0.155 −−− 3.93 −−−
DETAIL A
ROTATED 9 CW
SOLDERING FOOTPRINT*
6.20 3.00
0.244 0.118
2.58
0.102
5.80
1.60 6.17
0.228
0.063 0.243
Te
SCALE 3:1 mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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