# Power Load Switch, Low Side, Self Protected, AEC-Q100, 1 Output, 65 V, 7 A, 0.21 ohm, SOT-223-4

![Product image](https://novapart.co/image/farnell:2774762/)

**URL**: https://novapart.co/products/NCV8406ASTT1G/power-load-switch-low-side-self-protected-aec-q100
**SKU**: NCV8406ASTT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5020
**Stock**: 1000+
**Lead Time**: 148 days (indicative)

## Description

Power Load Switch Type:Low Side; Input Voltage:70V; Current Limit:7A; On State Resistance:0.21ohm; Distribution Switch Case Style:SOT-223; No. of Pins:4Pins; Thermal Protection:Yes

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Current Limit | 7A |
| Input Voltage | 70V |
| Product Range | - |
| Qualification | AEC-Q100 |
| No. Of Outputs | 1Outputs |
| No. Of Channels | 1Channels |
| Ic Case / Package | SOT-223 |
| Thermal Protection | Yes |
| On State Resistance | 0.21ohm |
| Power Load Switch Type | Low Side |
| Operating Temperature Max | 150°C |
| Operating Temperature Min | -40°C |
| Distribution Switch Case Style | SOT-223 |
| Automotive Qualification Standard | AEC-Q100 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2774762/)

## NCV8406A, NCV8406B 

## Self-Protected Low Side Driver with Temperature and Current Limit **65 V, 7.0 A, Single N−Channel** 

## **www.onsemi.com** 

NCV8406A/B is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. 

## **Features** 

- Short Circuit Protection 

- Thermal Shutdown with Automatic Restart 

- Over Voltage Protection 

- Integrated Clamp for Inductive Switching 

- ESD Protection 

- dV/dt Robustness 

- Analog Drive Capability (Logic Level Input) 

- These Devices are Faster than the Rest of the NCV Devices 

- NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Typical Applications** 

- Switch a Variety of Resistive, Inductive and Capacitive Loads 

- Can Replace Electromechanical Relays and Discrete Circuits 

- Automotive / Industrial 

|**VDSS**<br>**(Clamped**|**ed)**<br>**RDS(on) TYP**|**ID TYP**<br>**(Limited)**|
|---|---|---|
|65 V|210 m|7.0 A|



**==> picture [182 x 392] intentionally omitted <==**

**----- Start of picture text -----**<br>
Drain<br>Overvoltage<br>Gate Protection<br>Input<br>ESD Protection<br>Temperature Current Current<br>Limit Limit Sense<br>Source<br>MARKING<br>DIAGRAM<br>4<br>DRAIN<br>1 ” 4<br>2<br>3 AYW<br>SOT−223 xxxxx<br>CASE 318E<br>STYLE 3 1 2 3<br>GATE SOURCE<br>4 DRAIN<br>1 [2] YWW<br>3 xxxxxG<br>DPAK<br>7-7<br>CASE 369C<br>A = Assembly Location<br>Y = Year<br>W, WW = Work Week<br>xxxxx = 8406A or 8406B<br>G or  = Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. 

Publication Order Number: **NCV8406/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **March, 2017 − Rev. 6** 

**NCV8406A, NCV8406B** 

## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Drain−to−Source Voltage Internally Clamped|VDSS|60|Vdc|
|Gate−to−Source Voltage|VGS|�14|Vdc|
|Drain Current<br>Continuous|ID|Internally Limited||
|Total Power Dissipation − SOT−223 Version<br>@ TA= 25°C (Note 1)<br>@ TA= 25°C (Note 2)|PD|1.25<br>1.81|W|
|Total Power Dissipation − DPAK Version<br>@ TA= 25°C (Note 1)<br>@ TA= 25°C (Note 2)|PD|1.31<br>2.31|W|
|Thermal Resistance − SOT−223 Version<br>Junction−to−Soldering Point<br>Junction−to−Ambient (Note 1)<br>Junction−to−Ambient (Note 2)|R�JS<br>R�JA<br>R�JA|7.0<br>100<br>69|°C/W|
|Thermal Resistance − DPAK Version<br>Junction−to−Soldering Point<br>Junction−to−Ambient (Note 1)<br>Junction−to−Ambient (Note 2)|R�JS<br>R�JA<br>R�JA|1.0<br>95<br>54|°C/W|
|Single Pulse Inductive Load Switching Energy<br>(Starting TJ= 25°C, VDD= 50 Vdc, VGS= 5.0 Vdc,<br>IL= 2.1 Apk, L = 50 mH, RG= 25�)|EAS|110|mJ|
|Load Dump Voltage (VGS= 0 and 10 V, RI= 2�, RL= 7�, td= 400 ms)|VLD|75|V|
|Operating Junction Temperature Range|TJ|−40 to 150|°C|
|Storage Temperature Range|Tstg|−55 to 150|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu. 

2. Mounted onto 1 ″ square pad size (700 sq/mm) FR4 PCB, 1 oz cu. 

**==> picture [289 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
+<br>ID<br>DRAIN<br>IG<br>VDS<br>+ GATE<br>SOURCE<br>VGS<br>− −<br>**----- End of picture text -----**<br>


**Figure 1. Voltage and Current Convention** 

**www.onsemi.com** 

**2** 

## **NCV8406A, NCV8406B** 

## **MOSFET ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**MOSFET ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise n|**MOSFET ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise n|oted)|||||
|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|Drain−to−Source Clamped Breakdown Voltage<br>(VGS= 0 V, ID= 2 mA)||V(BR)DSS|60|65|70|V|
|Zero Gate Voltage Drain Current<br>(VDS= 52 V, VGS= 0 V)||IDSS|−|22|100|�A|
|Gate Input Current<br>(VGS= 5.0 V, VDS= 0 V)||IGSS|−|30|100|�A|
|**ON CHARACTERISTICS**|||||||
|Gate Threshold Voltage<br>(VDS= VGS, ID= 150�A)<br>Threshold Temperature Coefficient||VGS(th)|1.2<br>−|1.66<br>4.0|2.0<br>−|V<br>−mV/°C|
|Static Drain−to−Source On−Resistance (Note 3)<br>(VGS= 10 V, ID= 2.0 A, TJ@ 25°C)||RDS(on)|−|185|210|m�|
|Static Drain−to−Source On−Resistance (Note 3)<br>(VGS= 5.0 V, ID= 2.0 A, TJ@ 25°C)<br>(VGS= 5.0 V, ID= 2.0 A, TJ@ 150°C)||RDS(on)|−<br>−|210<br>445|240<br>520|m�|
|Source−Drain Forward On Voltage<br>(IS= 7.0 A, VGS= 0 V)||VSD|−|0.9|1.1|V|
|**SWITCHING CHARACTERISTICS**(Note 6)|||||||
|Turn−on Delay Time|RL= 6.6�, Vin=  0 to 10 V,<br>VDD= 13.8 V, ID= 2.0 A, 10% Vinto 10% ID|td(on)|−|127|−|ns|
|Turn−on  Rise Time|RL= 6.6�, Vin= 0 to 10 V,<br>VDD= 13.8 V, ID= 2.0 A, 10% IDto 90% ID|trise|−|486|−|ns|
|Turn−off Delay Time|RL= 6.6�, Vin=  0 to 10 V,<br>VDD= 13.8 V, ID= 2.0 A, 90% Vinto 90% ID|td(off)|−|1600|−|ns|
|Turn−off Fall Time|RL= 6.6�, Vin= 0 to 10 V,<br>VDD= 13.8 V, ID= 2.0 A, 90% IDto 10% ID|tfall|−|692|−|ns|
|Slew Rate ON|RL= 6.6�, Vin=  0 to 10 V,<br>VDD= 13.8 V, ID= 2.0 A, 70% to 50% VDD|dVDS/dTon|−|79|−|V/�s|
|Slew Rate OFF|RL= 6.6�, Vin= 0 to 10 V,<br>VDD= 13.8 V, ID= 2.0 A, 50% to 70% VDD|dVDS/dToff|−|27|−|V/�s|
|**SELF PROTECTION CHARACTERISTICS **(Note 4)|||||||
|Current Limit|VDS= 10 V, VGS= 5.0 V, TJ= 25°C (Note 5)<br>VDS= 10 V, VGS= 5.0 V, TJ= 150°C (Notes 5, 6)<br>VDS= 10 V, VGS= 10 V, TJ= 25°C (Notes 5)|ILIM|5.0<br>3.5<br>6.5|7.0<br>4.5<br>8.5|9.5<br>6.0<br>10.5|A|
|Temperature Limit (Turn−off)|VGS= 5.0 V (Note 6)|TLIM(off)|150|180|200|°C|
|Thermal Hysteresis|VGS= 5.0 V|�TLIM(on)|−|10|−|°C|
|Temperature Limit (Turn−off)|VGS= 10 V (Note 6)|TLIM(off)|150|180|200|°C|
|Thermal Hysteresis|VGS= 10 V|�TLIM(on)|−|20|−|°C|
|Input Current during<br>Thermal Fault|VDS= 0 V, VGS= 5.0 V, TJ= TJ> T(fault)(Note 6)<br>VDS= 0 V, VGS= 10 V, TJ= TJ> T(fault)(Note 6)|Ig(fault)|−<br>−|5.9<br>12.3|−|mA|
|**ESD ELECTRICAL CHARACTERISTICS**|||||||
|Electro−Static Discharge Capability<br>Human Body Model (HBM)<br>Machine Model (MM)||ESD|6000<br>500|−<br>−|−<br>−|V|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 

4. Fault conditions are viewed as beyond the normal operating range of the part. 

5. Current limit measured at 380 � s after gate pulse. 

6. Not subject to production test. 

**www.onsemi.com** 

**3** 

**NCV8406A, NCV8406B** 

## **TYPICAL PERFORMANCE CURVES** 

**==> picture [243 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>TJstart = 25 ° C<br>TJstart = 150 ° C<br>1<br>10 100<br>L (mH)<br>ILmax (A)<br>**----- End of picture text -----**<br>


**Figure 2. Single Pulse Maximum Switch−off Current vs. Load Inductance** 

**==> picture [241 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>TJstart = 25 ° C<br>1<br>TJstart = 150 ° C<br>0.1<br>1 10<br>TIME IN CLAMP (ms)<br>ILmax (A)<br>**----- End of picture text -----**<br>


**Figure 4. Single Pulse Maximum Inductive Switch−off Current vs. Time in Clamp** 

**==> picture [240 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TJstart = 25 ° C<br>100<br>TJstart = 150 ° C<br>10<br>10 100<br>L (mH)<br>Emax (mJ)<br>**----- End of picture text -----**<br>


**Figure 3. Single−Pulse Maximum Switching Energy vs. Load Inductance** 

**==> picture [240 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TJstart = 25 ° C<br>100<br>TJstart = 150 ° C<br>10<br>1 10<br>TIME IN CLAMP (ms)<br>Emax (mJ)<br>**----- End of picture text -----**<br>


**Figure 5. Single−Pulse Maximum Inductive Switching Energy vs. Time in Clamp** 

**==> picture [241 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
6 V 7 V 8 V 9 V<br>12 10 V<br>10<br>8 5 V<br>4 V<br>6 Ta = 25 ° C<br>3.3 V<br>4<br>3 V<br>2<br>VGS = 2.5 V<br>0<br>0 5 10 15<br>VDS (V)<br> (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 6. On−state Output Characteristics** 

**==> picture [239 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
12<br>−40 ° C<br>VDS = 10 V 25 ° C<br>9<br>100 ° C<br>6<br>150 ° C<br>3<br>0<br>0 1 2 3 4 5<br>VGS (V)<br> (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 7. Transfer Characteristics** 

**www.onsemi.com** 

**4** 

**NCV8406A, NCV8406B** 

## **TYPICAL PERFORMANCE CURVES** 

**==> picture [241 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
600<br>ID = 2 A<br>550<br>ID = 0.5 A<br>500<br>450 150 ° C<br>400<br>350 100 ° C<br>300<br>250<br>25 ° C<br>200<br>150 −40 ° C<br>100<br>3 4 5 6 7 8 9 10<br>VGS (V)<br>) �<br> (m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 8. RDS(on) vs. Gate−Source Voltage** 

**==> picture [239 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
500<br>150 ° C, VGS = 5 V<br>450<br>150 ° C, VGS = 10 V<br>400<br>350 100 ° C, V GS  = 5 V<br>300<br>100 ° C, VGS = 10 V<br>250<br>25 ° C, VGS = 5 V<br>200<br>150 25 ° C, VGS = 10 V −40 ° C, VGS = 5 V<br>100 −40 ° C, VGS = 10 V<br>50<br>0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3<br>ID (A)<br>) �<br> (m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 9. RDS(on) vs. Drain Current** 

**==> picture [237 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.5<br>ID = 2 A<br>VGS = 10 V<br>2.0<br>VGS = 5 V<br>1.5<br>1.0<br>0.5<br>−40 −20 0 20 40 60 80 100 120 140<br>T ( ° C)<br>DS(on)<br>NORMALIZED R<br>**----- End of picture text -----**<br>


**Figure 10. Normalized RDS(on) vs. Temperature** 

**==> picture [241 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
15<br>13 −40 ° C<br>11 25 ° C<br>9 100 ° C<br>7<br>150 ° C<br>5<br>VDS = 10 V<br>3<br>4 5 6 7 8 9 10<br>VGS (V)<br> (A)<br>ILIM<br>**----- End of picture text -----**<br>


**Figure 11. Current Limit vs. Gate−Source Voltage** 

**==> picture [491 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
15 1000<br>VGS = 10 V VDS = 10 V<br>100<br>13<br>10<br>11 VGS = 5 V 1 150 ° C<br>100 ° C<br>0.1<br>9<br>25 ° C<br>0.01<br>7 VGS = 0 V<br>0.001<br>−40 ° C<br>5 0.0001<br>−40 −20 0 20 40 60 80 100 120 140 10 20 30 40 50 60 70<br>TJ ( ° C) VDS (V)<br>A)<br>�<br> (A)  (<br>ILIM IDSS<br>**----- End of picture text -----**<br>


**Figure 12. Current Limit vs. Junction Temperature** 

**Figure 13. Drain−to−Source Leakage Current** 

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**5** 

**NCV8406A, NCV8406B** 

## **TYPICAL PERFORMANCE CURVES** 

**==> picture [491 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2 1100<br>1.1 ID = 150  � A 1000<br>VDS = VGS<br>−40 ° C<br>1.0 900<br>25 ° C<br>0.9 800<br>100 ° C<br>0.8 700<br>150 ° C<br>0.7 600<br>VGS = 0 V<br>0.6 500<br>−40 −20 0 20 40 60 80 100 120 140 1 2 3 4 5 6 7 8 9 10<br>T ( ° C) IS (A)<br> (V)<br>GS(th)<br> (mV)<br>SD<br>V<br>NORMALIZED V<br>**----- End of picture text -----**<br>


**Figure 14. Normalized Threshold Voltage vs. Temperature** 

**Figure 15. Source−Drain Diode Forward Characteristics** 

**==> picture [489 x 388] intentionally omitted <==**

**----- Start of picture text -----**<br>
1600 3400<br>VDD = 13.8 V td(off), VGS = 10 V<br>1400 ID = 2 A td(off) 3000<br>RG = 0  � 2600<br>1200<br>2200 tr, VGS = 5 V<br>1000 td(off), VGS = 5 V<br>1800<br>800 tf tf, VGS = 10 V<br>1400<br>600 tr 1000 tf, VGS = 5 V<br>tr, VGS = 10 V<br>400<br>600<br>200 td(on) 200 td(on), VGS = 5 V<br>td(on), VGS = 10 V<br>0 −200<br>3 4 5 6 7 8 9 10 0 500 1000 1500 2000<br>VGS (V) RG ( � )<br>Figure 16. Resistive Load Switching Time vs. Figure 17. Resistive Load Switching Time vs.<br>Gate−Source Voltage Gate Resistance<br>35<br>30<br>25<br>dVDS/dt(off), VGS = 5 V<br>20<br>15 dVDS/dt(off), VGS = 10 V<br>10<br>5<br>0 500 1000 1500 2000<br>RG ( � )<br>TIME (ns) TIME (ns)<br>s)<br>�<br>DRAIN−SOURCE VOLTAGE SLOPE (V/<br>**----- End of picture text -----**<br>


**Figure 18. Drain−Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance** 

**www.onsemi.com** 

**6** 

**NCV8406A, NCV8406B** 

## **TYPICAL PERFORMANCE CURVES** 

**==> picture [493 x 618] intentionally omitted <==**

**----- Start of picture text -----**<br>
110 110<br>100 100<br>90 90<br>PCB Cu thickness, 1.0 oz<br>80 80<br>70 70<br>PCB Cu thickness, 1.0 oz<br>60 PCB Cu thickness, 2.0 oz 60<br>50 50<br>PCB Cu thickness, 2.0 oz<br>40 40<br>100 200 300 400 500 600 100 200 300 400 500 600<br>COPPER HEAT SPREADER AREA (mm [2] ) COPPER HEAT SPREADER AREA (mm [2] )<br>Figure 19. R � JA vs. Copper Area − SOT−223 Figure 20. R � JA vs. Copper Area − DPAK<br>1000<br>100 50% Duty Cycle<br>20%<br>10%<br>10<br>5%<br>2%<br>1<br>1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>Figure 21. Transient Thermal Resistance − SOT−223 Version<br>100<br>50% Duty Cycle<br>20%<br>10<br>10%<br>5%<br>2%<br>1 1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W) C/W)<br>° °<br> (  (<br>JA JA<br>� �<br>R R<br>C/W)<br>°<br>R(t) (<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 22. Transient Thermal Resistance − DPAK Version** 

**www.onsemi.com** 

**7** 

**NCV8406A, NCV8406B** 

## **TEST CIRCUITS AND WAVEFORMS** 

**==> picture [207 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
RL<br>VIN<br>D +<br>RG VDD<br>G DUT −<br>S<br>IDS<br>**----- End of picture text -----**<br>


**Figure 23. Resistive Load Switching Test Circuit** 

**==> picture [332 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
90%<br>10%<br>VIN<br>td(ON) tr<br>td(OFF)<br>tf<br>90%<br>10%<br>IDS<br>**----- End of picture text -----**<br>


**Figure 24. Resistive Load Switching Waveforms** 

**www.onsemi.com** 

**8** 

**NCV8406A, NCV8406B** 

**==> picture [168 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
TEST CIRCUITS AND WAVEFORMS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
L<br>VDS<br>VIN<br>D +<br>RG<br>VDD<br>G DUT −<br>S<br>tp<br>IDS<br>**----- End of picture text -----**<br>


**Figure 25. Inductive Load Switching Test Circuit** 

**==> picture [326 x 260] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 V<br>VIN 0 V<br>Tav<br>T<br>p<br>V(BR)DSS<br>Ipk<br>VDD<br>VDS<br>VDS(on)<br>IDS<br>0<br>**----- End of picture text -----**<br>


**Figure 26. Inductive Load Switching Waveforms** 

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**9** 

**NCV8406A, NCV8406B** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|NCV8406ASTT1G|SOT−223<br>(Pb−Free)|1000 / Tape & Reel|
|NCV8406ASTT3G|SOT−223<br>(Pb−Free)|4000 / Tape & Reel|
|NCV8406ADTRKG|DPAK<br>(Pb−Free)|2500 / Tape & Reel|
|NCV8406BDTRKG|DPAK<br>(Pb−Free)|2500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**10** 

**NCV8406A, NCV8406B** 

## **PACKAGE DIMENSIONS** 

## **SOT−223 (TO−261)** 

CASE 318E−04 ISSUE N 

||||||||||||||ISSUE N||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||**b**<br>**D**|||**1**<br>||||**E**<br>**b**<br>**A**<br>**�**<br>**L**|**L1**<br>**C**<br>|NOTES:<br>1. DIM<br>2. CO|ENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>NTROLLING DIMENSION: INCH.||||||
||||||||||||||||||||||
|||**HE**|||||||||||||||||||
||||||**4**<br>**1**<br>**2**|||**3**||||||**DIM**|**MILLIMETERS**|||**INCHES**|||
||||||||||||||||**MIN**|**NOM**|**MAX**|**MIN**|**NOM**|**MAX**|
|||||||||||||||**A**|1.50|1.63|1.75|0.060|0.064|0.068|
|||||||||||||||**A1**|0.02|0.06|0.10|0.001|0.002|0.004|
|||||||||||||||**b**|0.60|0.75|0.89|0.024|0.030|0.035|
|||||||||||||||**b1**|2.90|3.06|3.20|0.115|0.121|0.126|
|||**e**||||||||||||**c**|0.24|0.29|0.35|0.009|0.012|0.014|
|||||||||||||||**D**|630|650|670|0249|0256|0263|
|||||||||||||||**E**|.<br>3.30|.<br>3.50|.<br>3.70|.<br>0.130|.<br>0.138|.<br>0.145|
|||||||||||||||**e**|2.20|2.30|2.40|0.087|0.091|0.094|
|||||||||||||||**e1**|0.85|0.94|1.05|0.033|0.037|0.041|
|||||||||||||||**L**|0.20|−−−|−−−|0.008|−−−|−−−|
|||||||||||||||**L1**|1.50|1.75|2.00|0.060|0.069|0.078|
|||||||||||||||**HE**<br>|6.70<br>°|7.00|7.30<br>°|0.264<br>°|0.276|0.287<br>°|
||0.08 (0003)||||**1**|||||||||**�**<br>STYLE<br>PIN<br><br><br>|−<br>−<br>0<br>10<br>0<br>10<br>3:<br>1. GATE<br>2. DRAIN<br>3. SOURCE<br>4. DRAIN||||||
||||||||||||||||||||||
||||||||||||||||||||||



## **SOLDERING FOOTPRINT*** 

**==> picture [182 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.8<br>0.15<br>2.0<br>0.079<br>6.3<br>2.3 2.3<br>0.248<br>0.091 0.091<br>2.0<br>0.079<br>1.5 SCALE 6:1<br>� inches [mm] �<br>0.059<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**www.onsemi.com** 

**11** 

**NCV8406A, NCV8406B** 

## **PACKAGE DIMENSIONS** 

**==> picture [481 x 455] intentionally omitted <==**

**----- Start of picture text -----**<br>
DPAK (SINGLE GAUGE)<br>CASE 369C<br>ISSUE F<br>NOTES:<br>A 1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.<br>E C 2. CONTROLLING DIMENSION: INCHES.<br>A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>4 NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 bly op Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE<br>D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.<br>1 2 3 PLANE H.<br>7. OPTIONAL MOLD FEATURE.<br>L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX<br>b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38<br>e SIDE VIEW A1 0.000 0.005 0.00 0.13<br>b b 0.025 0.035 0.63 0.89<br>TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46<br>c 0.018 0.024 0.46 0.61<br>c2 0.018 0.024 0.46 0.61<br>H Z Z D 0.235 0.245 5.97 6.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41<br>L 0.055 0.070 1.40 1.78<br>L1 0.114 REF 2.90 REF<br>L2 0.020 BSC 0.51 BSC<br>L L3 0.035 0.050 0.89 1.27<br>A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01<br>chy L1 a CONSTRUCTIONSALTERNATE A. Z 0.155 −−− 3.93 −−−<br>DETAIL A<br>ROTATED 9  CW STYLE 2:<br>SOLDERING FOOTPRINT* PIN 1. GATE<br>2. DRAIN<br>3. SOURCE<br>6.20 3.00 4. DRAIN<br>0.244 0.118<br>2.58<br>0.102<br>5.80<br>1.60 6.17<br>0.228<br>0.063 0.243<br>Oe<br>SCALE 3:1 mm<br>inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**NCV8406/D** 

**12** 



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