# Self-Protected Low Side Driver, Temperature and Current Limit, 42V, 14A, Single N−Channel, SOT-223-4

![Product image](https://novapart.co/image/farnell:2464235/)

**URL**: https://novapart.co/products/NCV8403ASTT1G/self-protected-low-side-driver-temperature-and
**SKU**: NCV8403ASTT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4980
**Stock**: 1000+

## Description

Driver Configuration:Low Side; Peak Output Current:-; Supply Voltage Min:-; Supply Voltage Max:-; Driver Case Style:SOT-223; No. of Pins:4Pins; Input Delay:-; Output Delay:-; Operating Tem

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| Ic Mounting | Surface Mount |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | AEC-Q100 |
| No. Of Channels | 1Channels |
| Ic Case / Package | SOT-223 |
| Power Switch Type | MOSFET |
| Driver Configuration | Low Side |
| Operating Temperature Max | 150°C |
| Operating Temperature Min | -40°C |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2464235/)

## NCV8403A, NCV8403B 

## Self-Protected Low Side Driver with Temperature and Current Limit 

## **42 V, 14 A, Single N−Channel, SOT−223** 

NCV8403A/B is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. 

## **Features** 

- Short Circuit Protection 

- Thermal Shutdown with Automatic Restart 

- Over Voltage Protection 

- Integrated Clamp for Inductive Switching 

- ESD Protection 

- dV/dt Robustness 

- Analog Drive Capability (Logic Level Input) 

- NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Typical Applications** 

- Switch a Variety of Resistive, Inductive and Capacitive Loads 

- Can Replace Electromechanical Relays and Discrete Circuits 

- Automotive / Industrial 

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www.onsemi.com<br>VDSS ID MAX<br>(Clamped) RDS(on) TYP (Limited)<br>42 V 53 m  @ 10 V 15 A<br>ee ee eee<br>**----- End of picture text -----**<br>


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Drain<br>Overvoltage<br>Gate Protection<br>Input<br>ESD Protection<br>Temperature Current Current<br>Limit Limit Sense<br>Source<br>**----- End of picture text -----**<br>


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MARKING<br>DIAGRAM<br>4<br>DRAIN<br>1 4<br>2<br>3 AYW<br>SOT−223 xxxxx<br>CASE 318E<br>STYLE 3 aa 1 a 2 3<br>GATE SOURCE<br>4 DRAIN<br>1 [2] YWW<br>3 xxxxxG<br>DPAK<br>7-7<br>CASE 369C<br>A = Assembly Location<br>Y = Year<br>W, WW = Work Week<br>xxxxx = V8403A or V8403B<br>G or  = Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. 

Publication Order Number: **NCV8403/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **September, 2016 − Rev. 8** 

**NCV8403A, NCV8403B** 

## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Drain−to−Source Voltage Internally Clamped|VDSS|42|Vdc|
|Gate−to−Source Voltage|VGS|�14|Vdc|
|Drain Current<br>Continuous|ID|Internally Limited||
|Total Power Dissipation − SOT−223 Version<br>@ TA= 25°C (Note 1)<br>@ TA= 25°C (Note 2)<br>Total Power Dissipation − DPAK Version<br>@ TA= 25°C (Note 1)<br>@ TA= 25°C (Note 2)|PD|1.13<br>1.56<br>1.32<br>2.5|W|
|Thermal Resistance − SOT−223 Version<br>Junction−to−Soldering Point<br>Junction−to−Ambient (Note 1)<br>Junction−to−Ambient (Note 2)<br>Thermal Resistance − DPAK Version<br>Junction−to−Soldering Point<br>Junction−to−Ambient (Note 1)<br>Junction−to−Ambient (Note 2)|R�JS<br>R�JA<br>R�JA<br>R�JS<br>R�JA<br>R�JA|12<br>110<br>80<br>2.5<br>95<br>50|°C/W|
|Single Pulse Inductive Load Switching Energy<br>(VDD= 25 Vdc, VGS= 5.0 V, IL= 2.8 A, L = 120 mH, RG= 25�)|EAS|470|mJ|
|Load Dump Voltage (VGS= 0 and 10 V, RI= 2.0�, RL= 4.5�, td= 400 ms)|VLD|55|V|
|Operating Junction Temperature|TJ|−40 to 150|°C|
|Storage Temperature|Tstg|−55 to 150|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Surface mounted onto minimum pad size (0.412 ″ square) FR4 PCB, 1 oz cu. 

2. Mounted onto 1 ″ square pad size (1.127 ″ square) FR4 PCB, 1 oz cu. 

**==> picture [289 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
+<br>ID<br>DRAIN<br>IG<br>VDS<br>+ GATE<br>SOURCE<br>VGS<br>− −<br>**----- End of picture text -----**<br>


**Figure 1. Voltage and Current Convention** 

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**2** 

**NCV8403A, NCV8403B** 

## **MOSFET ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**MOSFET ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise|**MOSFET ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise|noted)|||||
|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|Drain−to−Source Clamped Breakdown Voltage<br>(VGS= 0 Vdc, ID= 250�Adc)<br>(VGS= 0 Vdc, ID= 250�Adc, TJ= −40°C to 150°C) (Note 3)||V(BR)DSS|42<br>40|46<br>45|51<br>51|Vdc<br>Vdc|
|Zero Gate Voltage Drain Current<br>(VDS= 32 Vdc, VGS= 0 Vdc)<br>(VDS= 32 Vdc, VGS= 0 Vdc, TJ= 150°C) (Note 3)||IDSS|−<br>−|0.6<br>2.5|5.0<br>−|�Adc|
|Gate Input Current<br>(VGS= 5.0 Vdc, VDS= 0 Vdc)||IGSS|−|50|125|�Adc|
|**ON CHARACTERISTICS**|||||||
|Gate Threshold Voltage<br>(VDS= VGS, ID= 1.2 mAdc)<br>Threshold Temperature Coefficient (Negative)||VGS(th)|1.0<br>−|1.7<br>5.0|2.2<br>−|Vdc<br>mV/°C|
|Static Drain−to−Source On−Resistance (Note 4)<br>(VGS= 10 Vdc, ID= 3.0 Adc, TJ@ 25°C)<br>(VGS= 10 Vdc, ID= 3.0 Adc, TJ@ 150°C) (Note 3)||RDS(on)|−<br>−|53<br>95|68<br>123|m�|
|Static Drain−to−Source On−Resistance (Note 4)<br>(VGS= 5.0 Vdc, ID= 3.0 Adc, TJ@ 25°C)<br>(VGS= 5.0 Vdc, ID= 3.0 Adc, TJ@ 150°C) (Note 3)||RDS(on)|−<br>−|63<br>105|76<br>135|m�|
|Source−Drain Forward On Voltage<br>(IS= 7.0 A, VGS= 0 V)||VSD|−|0.95|1.1|V|
|**SWITCHING CHARACTERISTICS**(Note 3)|||||||
|Turn−ON Time (10% VINto 90% ID)|VIN= 0 V to 5 V, VDD= 25 V<br>ID= 1.0 A, Ext RG= 2.5�|tON||44||**�s**|
|Turn−OFF Time (90% VINto 10% ID)||tOFF||84|||
|Turn−ON Time (10% VINto 90% ID)|VIN= 0 V to 10 V, VDD= 25 V,<br>ID= 1.0 A, Ext RG= 2.5�|tON||15|||
|Turn−OFF Time (90% VINto 10% ID)||tOFF||116|||
|Slew−Rate ON (20% VDSto 50% VDS)|Vin= 0 to 10 V, VDD= 12 V,<br>RL= 4.7�|−dVDS/dtON||2.43||V��s|
|Slew−Rate OFF (80% VDSto 50% VDS)||dVDS/dtOFF||0.83|||
|**SELF PROTECTION CHARACTERISTICS **(TJ= 25°C unless otherwise noted) (Note 5)|||||||
|Current Limit|VGS= 5.0 V, VDS= 10 V<br>VGS= 5.0 V, TJ= 150°C (Note 3)|ILIM|10<br>5.0|15<br>10|20<br>15|Adc|
|Current Limit|VGS= 10 V, VDS= 10 V<br>VGS= 10 V, TJ= 150°C (Note 3)|ILIM|12<br>8.0|17<br>13|22<br>18|Adc|
|Temperature Limit (Turn−off)|VGS= 5.0 Vdc (Note 3)|TLIM(off)|150|175|200|°C|
|Thermal Hysteresis|VGS= 5.0 Vdc|�TLIM(on)|−|15|−|°C|
|Temperature Limit (Turn−off)|VGS= 10 Vdc (Note 3)|TLIM(off)|150|165|185|°C|
|Thermal Hysteresis|VGS= 10 Vdc|�TLIM(on)|−|15|−|°C|
|**GATE INPUT CHARACTERISTICS**(Note|3)||||||
|Device ON Gate Input Current|VGS= 5 V ID= 1.0 A|IGON||50||�A|
||VGS= 10 V ID= 1.0 A|||400|||
|Current Limit Gate Input Current|VGS= 5 V, VDS= 10 V|IGCL||0.1||mA|
||VGS= 10 V, VDS= 10 V|||0.6|||
|Thermal Limit Fault Gate Input Current|VGS= 5 V, VDS= 10 V|IGTL||0.45||mA|
||VGS= 10 V, VDS= 10 V|||1.5|||
|**ESD ELECTRICAL CHARACTERISTICS **|(TJ= 25°C unless otherwise noted) (Note 3)||||||
|Electro−Static Discharge Capability|Human Body Model (HBM)|ESD|4000|−|−|V|
|Electro−Static Discharge Capability|Machine Model (MM)|ESD|400|−|−|V|



3. Not subject to production testing. 

4. Pulse Test: Pulse Width = 300 � s, Duty Cycle = 2%. 

5. Fault conditions are viewed as beyond the normal operating range of the part. 

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**3** 

**NCV8403A, NCV8403B** 

## **TYPICAL PERFORMANCE CURVES** 

**==> picture [243 x 173] intentionally omitted <==**

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10<br>TJstart = 25 ° C<br>TJstart = 150 ° C<br>1<br>10 100<br>L (mH)<br>ILmax (A)<br>**----- End of picture text -----**<br>


**Figure 2. Single Pulse Maximum Switch−off Current vs. Load Inductance** 

**==> picture [241 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10<br>TJstart = 25 ° C<br>TJstart = 150 ° C<br>1<br>1 10<br>TIME IN CLAMP (ms)<br>ILmax (A)<br>**----- End of picture text -----**<br>


**Figure 4. Single Pulse Maximum Inductive Switch−off Current vs. Time in Clamp** 

**==> picture [240 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TJstart = 25 ° C<br>TJstart = 150 ° C<br>100<br>10 100<br>L (mH)<br>Emax (mJ)<br>**----- End of picture text -----**<br>


**Figure 3. Single−Pulse Maximum Switching Energy vs. Load Inductance** 

**==> picture [240 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TJstart = 25 ° C<br>TJstart = 150 ° C<br>100<br>1 10<br>TIME IN CLAMP (ms)<br>Emax (mJ)<br>**----- End of picture text -----**<br>


**Figure 5. Single−Pulse Maximum Inductive Switching Energy vs. Time in Clamp** 

**==> picture [238 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
25<br>6 V 7 V 8 V 9 V<br>10 V<br>20<br>5 V<br>15<br>4 V<br>Ta = 25 ° C<br>10<br>3 V<br>5<br>VGS = 2.5 V<br>0<br>0 1 2 3 4 5<br>VDS (V)<br> (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 6. On−state Output Characteristics** 

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20<br>VDS = 10 V −40 ° C<br>15 25 ° C<br>100 ° C<br>10<br>150 ° C<br>5<br>0<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VGS (V)<br> (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 7. Transfer Characteristics** 

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**4** 

**NCV8403A, NCV8403B** 

## **TYPICAL PERFORMANCE CURVES** 

**==> picture [491 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
150 100<br>ID = 3 A 150 ° C, VGS = 5 V<br>150 ° C 90<br>125<br>80 °<br>150 C, VGS = 10 V<br>100 70 100 ° C, V GS  = 5 V<br>100 ° C 60 100 ° C, VGS = 10 V<br>75 25 ° C, VGS = 5 V<br>50<br>25 ° C 25 ° C, VGS = 10 V<br>40<br>50<br>25 −40 ° C 3020 −40−40 °° C, VC, VGS GS  = 10 V= 5 V<br>3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 9 10<br>VGS (V) ID (A)<br>) � ) �<br> (m  (m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


**Figure 8. RDS(on) vs. Gate−Source Voltage** 

**Figure 9. RDS(on) vs. Drain Current** 

**==> picture [237 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.00<br>ID = 5 A<br>1.75<br>1.50<br>1.25<br>VGS = 5 V<br>1.00<br>VGS = 10 V<br>0.75<br>0.50<br>−40 −20 0 20 40 60 80 100 120 140<br>T ( ° C)<br>DS(on)<br>NORMALIZED R<br>**----- End of picture text -----**<br>


**Figure 10. Normalized RDS(on) vs. Temperature** 

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25<br>−40 ° C<br>20<br>25 ° C<br>15 100 ° C<br>150 ° C<br>10<br>VDS = 10 V<br>5<br>5 6 7 8 9 10<br>VGS (V)<br> (A)<br>ILIM<br>**----- End of picture text -----**<br>


**Figure 11. Current Limit vs. Gate−Source Voltage** 

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**----- Start of picture text -----**<br>
25<br>VDS = 10 V<br>VGS = 10 V<br>20<br>VGS = 5 V<br>15<br>10<br>5<br>−40 −20 0 20 40 60 80 100 120 140<br>TJ ( ° C)<br> (A)<br>ILIM<br>**----- End of picture text -----**<br>


**Figure 12. Current Limit vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
100<br>VGS = 0 V<br>10<br>150 ° C<br>1<br>0.1<br>100 ° C<br>0.01<br>25 ° C<br>0.001<br>−40 ° C<br>0.0001<br>0.00001<br>10 15 20 25 30 35 40<br>VDS (V)<br>A)<br>�<br> (<br>IDSS<br>**----- End of picture text -----**<br>


**Figure 13. Drain−to−Source Leakage Current** 

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**5** 

**NCV8403A, NCV8403B** 

## **TYPICAL PERFORMANCE CURVES** 

**==> picture [492 x 614] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2 1.0<br>1.1 VIDDS = 1.2 mA = VGS 0.9 −40 ° C<br>1.0<br>25 ° C<br>0.8<br>0.9<br>0.7 100 ° C<br>0.8<br>0.6 150 ° C<br>0.7<br>VGS = 0 V<br>0.6 0.5<br>−40 −20 0 20 40 60 80 100 120 140 1 2 3 4 5 6 7 8 9 10<br>T ( ° C) IS (A)<br>Figure 14. Normalized Threshold Voltage vs. Figure 15. Source−Drain Diode Forward<br>Temperature Characteristics<br>250 3.0<br>200 RVIDDDG = 5 A = 0  = 25 V � 2.5 RVIDDDG = 5 A = 0  = 25 V � −dVDS/dt(on)<br>2.0<br>150<br>1.5<br>100<br>td(off) 1.0 dVDS/dt(off)<br>50 tf 0.5<br>0 td(on) tr 0<br>3 4 5 6 7 8 9 10 3 4 5 6 7 8 9 10<br>VGS (V) VGS (V)<br>Figure 16. Resistive Load Switching Time vs. Figure 17. Resistive Load Switching<br>Gate−Source Voltage Drain−Source Voltage Slope vs. Gate−Source<br>Voltage<br>100 2.50<br>−dVDS/dt(on), VGS = 10 V<br>td(off), VGS = 10 V 2.25<br>75 2.00<br>VIDDD = 5 A = 25 V td(off), VGS = 5 V 1.75 VIDDD = 5 A = 25 V<br>50 1.50<br>tf, VGS = 5 V tf, VGS = 10 V<br>1.25<br>tr, VGS = 5 V dVDS/dt(off), VGS = 5 V<br>25 td(on), VGS = 5 V td(on), VGS = 10 V tr, VGS = 10 V 1.00 dVDS/dt(off), VGS = 10 V<br>0.75<br>−dVDS/dt(on), VGS = 5 V<br>0 0.50<br>0 500 1000 1500 2000 0 500 1000 1500 2000<br>RG ( � ) RG ( � )<br> (V)<br>GS(th)<br> (V)<br>SD<br>V<br>NORMALIZED V<br>s)<br>�<br>s)<br>�<br>TIME (<br>DRAIN−SOURCE VOLTAGE SLOPE (V/<br>s)<br>�<br>s)<br>�<br>TIME (<br>DRAIN−SOURCE VOLTAGE SLOPE (V/<br>**----- End of picture text -----**<br>


**Figure 18. Resistive Load Switching Time vs. Gate Resistance** 

**Figure 19. Drain−Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance** 

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**6** 

**NCV8403A, NCV8403B** 

## **TYPICAL PERFORMANCE CURVES** 

**==> picture [493 x 409] intentionally omitted <==**

**----- Start of picture text -----**<br>
150 150<br>125 125<br>100 100<br>PCB Cu thickness, 1.0 oz<br>75 75<br>PCB Cu thickness, 2.0 oz PCB Cu thickness, 1.0 oz<br>50 50<br>PCB Cu thickness, 2.0 oz<br>25 25<br>0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800<br>COPPER HEAT SPREADER AREA (mm [2] ) COPPER HEAT SPREADER AREA (mm [2] )<br>Figure 20. R � JA vs. Copper Area − SOT−223 Figure 21. R � JA vs. Copper Area − DPAK<br>1000<br>100 50% Duty Cycle<br>20%<br>10%<br>10<br>5%<br>2%<br>1<br>1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W) C/W)<br>° °<br> (  (<br>JA JA<br>� �<br>R R<br>C/W<br>°<br>R(t)<br>**----- End of picture text -----**<br>


**Figure 22. Transient Thermal Resistance − SOT−223 Version** 

**==> picture [493 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>50% Duty Cycle<br>10 20%<br>10%<br>5%<br>2%<br>1<br>1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W<br>°<br>R(t)<br>**----- End of picture text -----**<br>


**Figure 23. Transient Thermal Resistance − DPAK Version** 

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**7** 

**NCV8403A, NCV8403B** 

## **TEST CIRCUITS AND WAVEFORMS** 

**==> picture [207 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
RL<br>VIN<br>D +<br>RG VDD<br>G DUT −<br>S<br>IDS<br>**----- End of picture text -----**<br>


**Figure 24. Resistive Load Switching Test Circuit** 

**==> picture [332 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
90%<br>10%<br>VIN<br>td(ON) tr<br>td(OFF)<br>tf<br>90%<br>10%<br>IDS<br>**----- End of picture text -----**<br>


**Figure 25. Resistive Load Switching Waveforms** 

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**8** 

**NCV8403A, NCV8403B** 

## **TEST CIRCUITS AND WAVEFORMS** 

**==> picture [252 x 223] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>VDS<br>VIN<br>D +<br>RG<br>VDD<br>G DUT −<br>S<br>tp<br>IDS<br>**----- End of picture text -----**<br>


**Figure 26. Inductive Load Switching Test Circuit** 

**==> picture [326 x 260] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 V<br>VIN 0 V<br>Tav<br>T<br>p<br>V(BR)DSS<br>Ipk<br>VDD<br>VDS<br>VDS(on)<br>IDS<br>0<br>**----- End of picture text -----**<br>


**Figure 27. Inductive Load Switching Waveforms** 

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**9** 

**NCV8403A, NCV8403B** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|NCV8403ASTT1G|SOT−223<br>(Pb−Free)|1000 / Tape & Reel|
|NCV8403ASTT3G|SOT−223<br>(Pb−Free)|4000 / Tape & Reel|
|NCV8403ADTRKG|DPAK<br>(Pb−Free)|2500 / Tape & Reel|
|NCV8403BDTRKG|DPAK<br>(Pb−Free)|2500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**10** 

**NCV8403A, NCV8403B** 

## **PACKAGE DIMENSIONS** 

**SOT−223 (TO−261)** CASE 318E−04 ISSUE N 

||||||**b**<br>**D**|**b**<br>**D**|**b**<br>**D**|**1**<br>|**1**<br>|**1**<br>|**1**<br>|**E**<br>**b**<br>**A**<br>**�**<br>**L**|**L1**<br>**C**<br>|NOTES:<br>1. DIM<br>2. CO|ENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>NTROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>NTROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>NTROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>NTROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>NTROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>NTROLLING DIMENSION: INCH.|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||||||||
|||**HE**|||||||||||||||||||
||||||**4**<br>**1**<br>**2**|||**3**||||||**DIM**|**MILLIMETERS**|||**INCHES**|||
||||||||||||||||**MIN**|**NOM**|**MAX**|**MIN**|**NOM**|**MAX**|
|||||||||||||||**A**|1.50|1.63|1.75|0.060|0.064|0.068|
|||||||||||||||**A1**|0.02|0.06|0.10|0.001|0.002|0.004|
|||||||||||||||**b**|0.60|0.75|0.89|0.024|0.030|0.035|
|||||||||||||||**b1**|2.90|3.06|3.20|0.115|0.121|0.126|
|||**e**||||||||||||**c**|0.24|0.29|0.35|0.009|0.012|0.014|
|||||||||||||||**D**|630|650|670|0249|0256|0263|
|||||||||||||||**E**|.<br>3.30|.<br>3.50|.<br>3.70|.<br>0.130|.<br>0.138|.<br>0.145|
|||||||||||||||**e**|2.20|2.30|2.40|0.087|0.091|0.094|
|||||||||||||||**e1**|0.85|0.94|1.05|0.033|0.037|0.041|
|||||||||||||||**L**|0.20|−−−|−−−|0.008|−−−|−−−|
|||||||||||||||**L1**|1.50|1.75|2.00|0.060|0.069|0.078|
|||||||||||||||**HE**<br>|6.70<br>°|7.00|7.30<br>°|0.264<br>°|0.276|0.287<br>°|
||0.08 (0003)||||**A1**|||||||||STYLE<br>PIN<br><br><br><br>**�**|3:<br>1. GATE<br>2. DRAIN<br>3. SOURCE<br>4. DRAIN<br>−<br>−<br>0<br>10<br>0<br>10||||||
||||||||||||||||||||||
||||||||||||||||||||||



## **SOLDERING FOOTPRINT** 

**==> picture [182 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.8<br>0.15<br>2.0<br>0.079<br>6.3<br>2.3 2.3<br>0.248<br>0.091 0.091<br>2.0<br>0.079<br>1.5 SCALE 6:1<br>� inches [mm] �<br>0.059<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

**11** 

**NCV8403A, NCV8403B** 

## **PACKAGE DIMENSIONS** 

**==> picture [481 x 449] intentionally omitted <==**

**----- Start of picture text -----**<br>
DPAK (SINGLE GAUGE)<br>CASE 369C<br>A ISSUE F NOTES:1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.<br>E C 2. CONTROLLING DIMENSION: INCHES.<br>A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>4 NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 bly op Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE<br>D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.<br>1 2 3 PLANE H.<br>7. OPTIONAL MOLD FEATURE.<br>L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX<br>b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38<br>e SIDE VIEW A1 0.000 0.005 0.00 0.13<br>b b 0.025 0.035 0.63 0.89<br>TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46<br>c 0.018 0.024 0.46 0.61<br>c2 0.018 0.024 0.46 0.61<br>H Z Z D 0.235 0.245 5.97 6.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41<br>L 0.055 0.070 1.40 1.78<br>L1 0.114 REF 2.90 REF<br>L2 0.020 BSC 0.51 BSC<br>L L3 0.035 0.050 0.89 1.27<br>A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01<br>mee L1 e ae CONSTRUCTIONSALTERNATE Gh Z 0.155 −−− 3.93 −−−<br>DETAIL A<br>ROTATED 9  CW<br>SOLDERING FOOTPRINT*<br>6.20 3.00<br>0.244 0.118<br>2.58<br>0.102<br>5.80<br>1.60 6.17<br>0.228<br>0.063 0.243<br>Oe<br>SCALE 3:1 mm<br>inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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