# Fast / Ultrafast Diode, 200 V, 6 A, Dual Common Cathode, 1.13 V, 35 ns, 50 A ![Product image](https://novapart.co/image/farnell:2441604/) **URL**: https://novapart.co/products/MURD620CTT4G/fast-ultrafast-diode-200-v-6-a-dual-common-cathode **SKU**: MURD620CTT4G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes **Price**: €0.2380 **Stock**: 10+ **Lead Time**: 92 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):6A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1.13V; Reverse Recovery Time trr Max:35ns; Forwa ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3 Pin | | Product Range | MURD6 | | Qualification | - | | Diode Case Style | TO-252 (DPAK) | | Diode Configuration | Dual Common Cathode | | Forward Voltage Max | 1.13V | | Forward Surge Current | 50A | | Reverse Recovery Time | 35ns | | Average Forward Current | 6A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 200V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2441604/) ## MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G ## SWITCHMODE Power Rectifier ## **DPAK Surface Mount Package** These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. ## **http://onsemi.com** **ULTRAFAST RECTIFIER 6.0 AMPERES 200 VOLTS** ## **Features** - Ultrafast 35 Nanosecond Recovery Time - Low Forward Voltage Drop - Low Leakage - ESD Rating: - ♦ Human Body Model = 3B (> 8 kV) - ♦ Machine Model = C (> 400 V) - NRVUD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free and are RoHS Compliant* ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 0.4 Gram (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds **==> picture [66 x 66] intentionally omitted <==** **----- Start of picture text -----**
DPAK
CASE 369C
1
4
3 “a,
**----- End of picture text -----**
**==> picture [106 x 113] intentionally omitted <==** **----- Start of picture text -----**
MARKING DIAGRAM
AYWW
U
620TG
a)
A = Assembly Location
Y = Year
WW = Work Week
U620T = Device Code
G = Pb−Free Package
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## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MURD620CTG
(Pb−Free)|DPAK
(Pb−Free)|75 Units / Rail| |NRVUD620CTG
(Pb−Free)|DPAK
(Pb−Free)|75 Units / Rail| |MURD620CTT4G
(Pb−Free)|DPAK
(Pb−Free)|2,500 /
Tape & Reel| |NRVUD620CTT4G
(Pb−Free)|DPAK
(Pb−Free)|2,500 /
Tape & Reel| > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MURD620CT/D** **1** © Semiconductor Components Industries, LLC, 2012 **November, 2012 − Rev. 11** **MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|200|V| |Average Rectified Forward Current
(Rated VR, TC= 140°C)
Per Diode
Per Device|IF(AV)|3.0
6.0|A| |Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC= 145°C)
Per Diode|IF|6.0|A| |Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)|IFSM|50|A| |Operating Junction and Storage Temperature Range|TJ, Tstg|−65 to +175|°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **THERMAL CHARACTERISTICS** (Per Diode) |**THERMAL CHARACTERISTICS**(Per Diode)|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Thermal Resistance, Junction−to−Case|R�JC|9|°C/W| |Thermal Resistance, Junction−to−Ambient (Note 1)|R�JA|80|°C/W| 1. Rating applies when surface mounted on the minimum pad sizes recommended. ## **ELECTRICAL CHARACTERISTICS** (Per Diode) |**ELECTRICAL CHARACTERISTICS**(Per Diode)|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage Drop (Note 2)
(iF= 3 Amps, TC= 25°C)
(iF= 3 Amps, TC= 125°C)
(iF= 6 Amps, TC= 25°C)
(iF= 6 Amps, TC= 125°C)|vF|1
0.96
1.2
1.13|V| |Maximum Instantaneous Reverse Current (Note 2)
(TJ= 25°C, Rated dc Voltage)
(TJ= 125°C, Rated dc Voltage)|iR|5
250|�A| |Maximum Reverse Recovery Time
(IF= 1 Amp, di/dt = 50 Amps/�s, VR= 30 V, TJ= 25°C)
(IF= 0.5 Amp, iR= 1 Amp, IREC= 0.25 A, VR= 30 V, TJ= 25°C)|trr|35
25|ns| 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **http://onsemi.com** **2** **MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G** **==> picture [492 x 602] intentionally omitted <==** **----- Start of picture text -----**
100 100
70 TJ = 175 ° C
10
50
1 150 ° C
100 ° C
30
0.1
20
0.01
25 ° C
10 0.001
7.0
0.0001
0 20 40 60 80 100 120 140 160 180 200
5.0 VR, REVERSE VOLTAGE (V)
Figure 2. Typical Leakage Current* (Per Leg)
3.0 175°C TJ = 25°C * The curves shown are typical for the highest voltage device in thevoltage grouping. Typical reverse current for lower voltage selections
2.0 can be estimated from these curves if VR is sufficiently below rated
VR.
150°C 100°C 14
1.0 13 5.0 SINE
12 10 WAVE
0.7
11
10 IPK/IAV = 20 dc
0.5
9.0
8.0
7.0 SQUARE
0.3
6.0 WAVE
5.0
0.2
4.0
3.0 T J = 175°C
2.0
0.1
1.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
vF, INSTANTANEOUS VOLTAGE (V) 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
Figure 1. Typical Forward Voltage (Per Leg) IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 3. Average Power Dissipation (Per Leg)
8.0 4.0
RATED VOLTAGE APPLIED RATED VOLTAGE APPLIED
7.0 R�JC = 9°C/W 3.5 R�JA = 80°C/W
6.0 3.0
TJ = 175°C SURFACE MOUNTED ON
5.0 2.5
MIN. PAD SIZE RECOMMENDED
dc
4.0 2.0
SINE WAVE
dc
3.0 OR 1.5 T J = 175°C
SQUARE WAVE
2.0 1.0 SINE WAVE
OR
1.0 0.5 SQUARE WAVE
0 0
100 110 120 130 140 150 160 170 180 0 20 40 60 80 100 120 140 160 180 200
TC, CASE TEMPERATURE ( ° C) TA, AMBIENT TEMPERATURE ( ° C)
A)
�
, REVERSE CURRENT (
IR
, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
P
, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE FORWARD CURRENT (AMPS)
IF(AV) IF(AV)
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**Figure 4. Current Derating, Case (Per Leg)** **Figure 5. Current Derating, Ambient (Per Leg)** **http://onsemi.com** **3** **MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G** **==> picture [245 x 177] intentionally omitted <==** **----- Start of picture text -----**
100
TJ = 25 ° C
10
1
0 10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 6. Typical Capacitance (Per Leg)** **http://onsemi.com** **4** **MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G** ## **PACKAGE DIMENSIONS** **==> picture [467 x 448] intentionally omitted <==** **----- Start of picture text -----**
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
E A 2.3. CONTROLLING DIMENSION: INCHES.THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
L3 4 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THEOUTERMOST EXTREMES OF THE PLASTIC BODY.
1 2 3 D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMPLANE H.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
L4 At Fa A 0.086 0.094 2.18 2.38
b2 A1 0.000 0.005 0.00 0.13
b c b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
by L2 [GAUGE] PLANE MG C SEATINGPLANE eee c2D 0.0180.235 0.0240.245 0.465.97 0.616.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
H 0.370 0.410 9.40 10.41
L A1 L 0.055 0.070 1.40 1.78
L1 L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
DETAIL A L3 0.035 0.050 0.89 1.27
ROTATED 9 CW L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−
SOLDERING FOOTPRINT*
6.20 3.00
0.244 0.118
2.58
PE
0.102
- 4
5.80
1.60 6.17
0.228
0.063 0.243
LS,
SCALE 3:1 mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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