# Fast / Ultrafast Diode, 200 V, 3 A, Single, 950 mV, 35 ns, 75 A ![Product image](https://novapart.co/image/farnell:2463422RL/) **URL**: https://novapart.co/products/MURD320T4G/fast-ultrafast-diode-200-v-3-a-single-950-mv-35-ns **SKU**: MURD320T4G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes **Price**: €0.3040 **Stock**: 1000+ **Lead Time**: 85 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):3A; Diode Configuration:Single; Forward Voltage VF Max:950mV; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm M ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3 Pin | | Product Range | MURD3 | | Qualification | - | | Diode Case Style | TO-252 (DPAK) | | Diode Configuration | Single | | Forward Voltage Max | 950mV | | Forward Surge Current | 75A | | Reverse Recovery Time | 35ns | | Average Forward Current | 3A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 200V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2463422RL/) ## MURD320, NRVUD320, SURD8320 ## Switch-mode Power Rectifier **DPAK Surface Mount Package** **www.onsemi.com** These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. ## **Features** - Ultrafast 35 Nanosecond Recovery Time **ULTRAFAST RECTIFIER 3.0 AMPERES, 200 VOLTS** - Low Forward Voltage Drop - Low Leakage - NRVUD, SURD8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **DPAK CASE 369C** - These Devices are Pb−Free and are RoHS Compliant* ## **Mechanical Characteristics** - Case: Epoxy, Molded - Weight: 0.4 Gram (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - ESD Ratings: - ♦ Machine Model = C (> 400 V) - ♦ Human Body Model = 3B (> 8 kV) **==> picture [147 x 63] intentionally omitted <==** **----- Start of picture text -----**
1 1
4 4
3 3
STYLE 3 STYLE 8
MARKING DIAGRAM
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**==> picture [158 x 72] intentionally omitted <==** **----- Start of picture text -----**
AYWW AYWW
U U
320G 320W1G
4) 4]
MURD320T4G NRVUD320W1T4G
SURD8320T4G
NRVUD320VT4G
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## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|200|V| |Average Rectified Forward Current
(Rated VR, TC= 158°C)|IF(AV)|3.0|A| |Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz,
TC= 158°C)|IFRM|6.0|A| |Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, 60 Hz)|IFSM|75|A| |Operating Junction and Storage
Temperature Range|TJ, Tstg|−65 to +175|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ## **ORDERING INFORMATION** |**Device**
**Package**|**Package**|**Shipping**†| |---|---|---| |MURD320T4G
(Pb−Free)|DPAK
(Pb−Free)|2500 / Tape &
Reel| |NRVUD320VT4G
(Pb−Free)|DPAK
(Pb−Free)|2500 / Tape &
Reel| |NRVUD320W1T4G
(Pb−Free)|DPAK
(Pb−Free)|2500 / Tape &
Reel| |SURD8320T4G
(Pb−Free)|DPAK
(Pb−Free)|2500 / Tape &
Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2015 **September, 2016 − Rev. 10** **MURD320/D** **MURD320, NRVUD320, SURD8320** ## **THERMAL CHARACTERISTICS** |**Characteristics**|**Symbol**|**Value**|**Unit**| |---|---|---|---| |Thermal Resistance − Junction−to−Case|R�JC|6|°C/W| |Thermal Resistance − Junction−to−Ambient (Note 1)|R�JA|80|°C/W| 1. Rating applies when surface mounted on the minimum pad sizes recommended. ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristics**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage Drop (Note 2)
(iF= 3 Amps, TJ= 25°C)
(iF= 3 Amps, TJ= 125°C)|vF|0.95
0.75|Volts| |Maximum Instantaneous Reverse Current (Note 2)
(TJ= 25°C, Rated dc Voltage)
(TJ= 125°C, Rated dc Voltage)|iR|5
500|�A| |Maximum Reverse Recovery Time
(IF= 1 Amp, di/dt = 50 Amps/�s, VR= 30 V, TJ= 25°C)
(IF= 0.5 Amp, iR= 1 Amp, IREC= 0.25 A, VR= 30 V, TJ= 25°C)|trr|35
25|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **==> picture [241 x 402] intentionally omitted <==** **----- Start of picture text -----**
100
70
50
30
20
10
7.0
5.0
3.0
175°C TJ = 25°C
2.0
150°C 100°C
1.0
0.7
0.5
0.3
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
vF, INSTANTANEOUS VOLTAGE (VOLTS)
, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF
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**Figure 1. Typical Forward Voltage** **==> picture [244 x 410] intentionally omitted <==** **----- Start of picture text -----**
80
40 TJ = 175°C
20 150°C
8.0
4.0
2.0
0.8 100°C
0.4
0.2
0.08
0.04 25°C
0.02
0.008
0.004
0.002
0 20 40 60 80 100 120 140 160 180 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficiently below rated
VR.
14
SINE WAVE
13
12 SQUARE WAVE
11 5.0
10 dc
9.0 10
8.0
7.0 IPK/IAV = 20
6.0
5.0
4.0
3.0 T J = 175°C
2.0
1.0
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
�
, REVERSE CURRENT ( A)
IR
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
P
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**Figure 3. Average Power Dissipation** **www.onsemi.com** **2** **MURD320, NRVUD320, SURD8320** **==> picture [240 x 174] intentionally omitted <==** **----- Start of picture text -----**
8.0
RATED VOLTAGE APPLIED
7.0 R�JC = 6°C/W
6.0
5.0
SINE WAVE
4.0 OR
SQUARE WAVE
3.0
dc
2.0 T J = 175°C
1.0
0
100 110 120 130 140 150 160 170 180
TC, CASE TEMPERATURE (°C)
, AVERAGE FORWARD CURRENT (AMPS)
IF(AV)
**----- End of picture text -----**
**Figure 4. Current Derating, Case** **==> picture [237 x 174] intentionally omitted <==** **----- Start of picture text -----**
4.0
RATED VOLTAGE APPLIED
3.5 R�JA = 80°C/W
3.0
SURFACE MOUNTED ON
2.5
MIN. PAD SIZE RECOMMENDED
2.0
dc
1.5 T J = 175°C
SINE WAVE
1.0 OR
SQUARE WAVE
0.5
0
0 20 40 60 80 100 120 140 160 180 200
TA, AMBIENT TEMPERATURE (°C)
, AVERAGE FORWARD CURRENT (AMPS)
IF(AV)
**----- End of picture text -----**
**Figure 5. Current Derating, Ambient** **==> picture [246 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000
500
300
200
TJ = 25°C
100
50
30
20
10
0 10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
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**Figure 6. Typical Capacitance** **www.onsemi.com** **3** **MURD320, NRVUD320, SURD8320** ## **PACKAGE DIMENSIONS** **==> picture [104 x 29] intentionally omitted <==** **----- Start of picture text -----**
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
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**==> picture [481 x 417] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 bale Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.
L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L L3 0.035 0.050 0.89 1.27
A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01
wet L1 s So CONSTRUCTIONS h ALTERNATE Gh Z 0.155 −−− 3.93 −−−
DETAIL A
STYLE 3: STYLE 8:
ROTATED 9 CW SOLDERING FOOTPRINT* PIN 1. ANODE PIN 1. N/C
2. CATHODE 2. CATHODE
3. ANODE 3. ANODE
6.20 3.00 4. CATHODE 4. CATHODE
0.244 0.118
2.58
0.102
5.80
1.60 6.17
0.228
0.063 0.243
Te
SCALE 3:1 mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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