# Fast / Ultrafast Diode, 800 V, 8 A, Single, 1.8 V, 100 ns, 100 A ![Product image](https://novapart.co/image/farnell:2535561/) **URL**: https://novapart.co/products/MUR880EG/fast-ultrafast-diode-800-v-8-a-single-18-100-ns **SKU**: MUR880EG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes **Price**: €0.5500 **Stock**: 500+ **Lead Time**: 99 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:800V; Forward Current If(AV):8A; Diode Configuration:Single; Forward Voltage VF Max:1.8V; Reverse Recovery Time trr Max:100ns; Forward Surge Curren ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 2 Pin | | Product Range | MUR88 | | Qualification | - | | Diode Case Style | TO-220AC | | Diode Configuration | Single | | Forward Voltage Max | 1.8V | | Forward Surge Current | 100A | | Reverse Recovery Time | 100ns | | Average Forward Current | 8A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 800V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2535561/) **MUR8100E is a Preferred Device** ## MUR8100E, MUR880E ## SWITCHMODE Power Rectifiers ## **Ultrafast “E’’ Series with High Reverse Energy Capability** The MUR8100 and MUR880E diodes are designed for use in switching power supplies, inverters and as free wheeling diodes. ## **Features** - 20 mJ Avalanche Energy Guaranteed - Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits - Ultrafast 75 Nanosecond Recovery Time - 175°C Operating Junction Temperature - Popular TO−220 Package - Epoxy Meets UL 94 V−0 @ 0.125 in. - Low Forward Voltage - Low Leakage Current - High Temperature Glass Passivated Junction - Reverse Voltage to 1000 V - Pb−Free Packages are Available* ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 1.9 Grams (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ## **http://onsemi.com** **ULTRAFAST RECTIFIERS 8.0 A, 800 V − 1000 V** **==> picture [118 x 346] intentionally omitted <==** **----- Start of picture text -----**
1
4
3 at
% 4
TO−220AC
CASE 221B
1
3
MARKING DIAGRAM
OO|
AY WWG
U8xxxE
KA
)
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
U8xxxE = Device Code
xxx = 100 or 80
KA = Diode Polarity
**----- End of picture text -----**
## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |MUR8100E|TO−220|50 Units / Rail| |MUR8100EG|TO−220
(Pb−Free)|50 Units / Rail| |MUR880E|TO−220|50 Units / Rail| |MUR880EG|TO−220
(Pb−Free)|50 Units / Rail| > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **Preferred** devices are recommended choices for future use and best overall value. Publication Order Number: **MUR8100E/D** **1** © Semiconductor Components Industries, LLC, 2008 **June, 2008 − Rev. 4** **MUR8100E, MUR880E** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MUR880E
MUR8100E|VRRM
VRWM
VR|800
1000|V| |Average Rectified Forward Current
(Rated VR, TC= 150°C) Total Device|IF(AV)|8.0|A| |Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC= 150°C)|IFM|16|A| |Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|100|A| |Operating Junction and Storage Temperature Range|TJ, Tstg|−65 to +175|°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Thermal Resistance, Junction−to−Case|R�JC|2.0|°C/W| |**ELECTRICAL CHARACTERISTICS**|||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 1)
(iF= 8.0 A, TC= 150°C)
(iF= 8.0 A, TC= 25°C)|vF|1.5
1.8|V| |Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TC= 100°C)
(Rated DC Voltage, TC= 25°C)|iR|500
25|�A| |Maximum Reverse Recovery Time
(IF= 1.0 A, di/dt = 50 A/�s)
(IF= 0.5 A, iR= 1.0 A, IREC= 0.25 A)|trr|100
75|ns| |Controlled Avalanche Energy
(See Test Circuit in Figure 6)|WAVAL|20|mJ| 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **http://onsemi.com** **2** **MUR8100E, MUR880E** **==> picture [489 x 401] intentionally omitted <==** **----- Start of picture text -----**
100 10,000
* The curves shown are typical for the highest voltage device in the voltage
* grouping. Typical reverse current for lower voltage selections can be
70 1000 * estimated from these same curves if VR is sufficiently below rated VR.
50
100 175°C
150°C
30
10
20 100°C
1.0
10 0.1 T J = 25°C
7.0 TJ = 175°C 0.01
100°C 0 200 400 600 800 1000
5.0 25°C VR, REVERSE VOLTAGE (VOLTS)
3.0 Figure 2. Typical Reverse Current*
2.0
10
9.0 RATED VR APPLIEDR APPLIED APPLIED
1.0
8.0
0.7 7.0 dc
0.5 6.0 SQUARE WAVE
5.0
0.3 4.0
3.0
0.2
2.0
1.0
0.1 0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 140 150 160 170 180
vF, INSTANTANEOUS VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)C, CASE TEMPERATURE (°C), CASE TEMPERATURE (°C)°C)C)
�
, REVERSE CURRENT ( A)
IR
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
, AVERAGE FORWARD CURRENT (AMPS)
IF(AV)F(AV)
**----- End of picture text -----**
**==> picture [239 x 173] intentionally omitted <==** **----- Start of picture text -----**
10
9.0 RATED VR APPLIEDR APPLIED APPLIED
8.0
7.0 dc
6.0 SQUARE WAVE
5.0
4.0
3.0
2.0
1.0
0
140 150 160 170 180
TC, CASE TEMPERATURE (°C)C, CASE TEMPERATURE (°C), CASE TEMPERATURE (°C)°C)C)
, AVERAGE FORWARD CURRENT (AMPS)
IF(AV)F(AV)
**----- End of picture text -----**
**Figure 3. Current Derating, Case** **Figure 1. Typical Forward Voltage** **==> picture [238 x 174] intentionally omitted <==** **----- Start of picture text -----**
10
9.0 R �JA = 16°C/W
8.0 R �JA = 60°C/W
(No Heat Sink)
7.0 dc
6.0
5.0 SQUARE WAVE
4.0
3.0 dc
2.0
1.0 SQUARE WAVE
0
0 20 40 60 80 100 120 140 160 180 200
TA, AMBIENT TEMPERATURE (°C)
, AVERAGE FORWARD CURRENT (AMPS)
IF(AV)
**----- End of picture text -----**
**Figure 4. Current Derating, Ambient** **==> picture [237 x 177] intentionally omitted <==** **----- Start of picture text -----**
14
TJ = 175°C
12
SQUARE WAVE
10
dc
8.0
6.0
4.0
2.0
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
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**Figure 5. Power Dissipation** **http://onsemi.com** **3** **MUR8100E, MUR880E** **==> picture [492 x 203] intentionally omitted <==** **----- Start of picture text -----**
+VDD
IL 40 �H COIL
BVDUT
VD
ID
MERCURY
SWITCH ID
IL
DUT
S1
VDD
t0 t1 t2 t
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**Figure 6. Test Circuit** **Figure 7. Current−Voltage Waveforms** The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 8, shows the MUR8100E in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. Although it is not recommended to design for this condition, the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. **==> picture [446 x 167] intentionally omitted <==** **----- Start of picture text -----**
EQUATION (1): CHANNEL 2:
CH1 500V A 20 � s 953 V VERT IL
BVDUT CH2 50mV 0.5 AMPS/DIV.
LI [2]
WAVAL � [1] 2 LPK [�] BVDUTVDD �
CHANNEL 1:
VDUT
EQUATION (2): 500 VOLTS/DIV.
LI [2]
WAVAL � [1] 2 LPK
TIME BASE:
20 �s/DIV.
1 ACQUISITIO N S 217:33 HRS
SAVEREF SOU R CE STACK
CH1 CH2 REF REF
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**Figure 8. Current−Voltage Waveforms** **http://onsemi.com** **4** **MUR8100E, MUR880E** **==> picture [489 x 173] intentionally omitted <==** **----- Start of picture text -----**
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.1
0.1 P(pk) Z �JC (t) = r(t) R �JC
0.05 R �JC = 1.5°C/W MAX
0.07
D CURVES APPLY FOR POWER
0.05
0.01 t 1 PULSE TRAIN SHOWN
0.03 t 2 READ TIME AT t1
0.02 SINGLE PULSE DUTY CYCLE, D = t 1 /t 2 T J(pk) - T C = P (pk) Z �JC (t)
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, TIME (ms)
(NORMALIZED)
r(t), TRANSIENT THERMAL RESISTANCE
**----- End of picture text -----**
**Figure 9. Thermal Response** **==> picture [242 x 174] intentionally omitted <==** **----- Start of picture text -----**
1000
TJ = 25°C
300
100
30
10
1.0 10 100
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
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**Figure 10. Typical Capacitance** SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. **http://onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [470 x 282] intentionally omitted <==** **----- Start of picture text -----**
TO−220, 2−LEAD
CASE 221B−04
ISSUE F
DATE 12 APR 2013
o
NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
Q B F T S 2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
SCALE 1:1 4 A 0.595 0.620 15.11 15.75
B 0.380 0.405 9.65 10.29
ae A Lt Bobs, C 0.160 0.190 4.06 4.82
U D 0.025 0.039 0.64 1.00
1 3 F 0.142 0.161 3.61 4.09
H G 0.190 0.210 4.83 5.33
H 0.110 0.130 2.79 3.30
K J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52
Q 0.100 0.120 2.54 3.04
L R 0.080 0.110 2.04 2.79
D R S 0.045 0.055 1.14 1.39
T 0.235 0.255 5.97 6.48
G J U 0.000 0.050 0.000 1.27
STYLE 1: STYLE 2:
PIN 1. CATHODE PIN 1. ANODE
2. N/A 2. N/A
3. ANODE 3. CATHODE
4. CATHODE 4. ANODE
**----- End of picture text -----**
**DOCUMENT NUMBER: 98ASB42149B DESCRIPTION: TO−220, 2−LEAD** ~~_~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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