# Standard Recovery Diode, 800 V, 4 A, Single, 1.85 V, 75 ns, 70 A ![Product image](https://novapart.co/image/farnell:2317402/) **URL**: https://novapart.co/products/MUR480ERLG/standard-recovery-diode-800-v-4-a-single-185-75-ns **SKU**: MUR480ERLG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Standard Recovery Rectifier Diodes **Price**: €0.2900 **Stock**: 500+ **Lead Time**: 92 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:800V; Forward Current If(AV):4A; Diode Configuration:Single; Forward Voltage VF Max:1.85V; Reverse Recovery Time trr Max:75ns; Forward Surge Curr ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 2Pins | | Product Range | MUR48 | | Qualification | - | | Diode Case Style | DO-201AD | | Diode Configuration | Single | | Forward Voltage Max | 1.85V | | Forward Surge Current | 70A | | Reverse Recovery Time | 75ns | | Average Forward Current | 4A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 800V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2317402/) ## MUR480EG, MUR4100EG ## SWITCHMODE Power Rectifiers ## **Ultrafast “E’’ Series with High Reverse Energy Capability** These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. ## **Features** - 20 mJ Avalanche Energy Guaranteed - Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits **http://onsemi.com** **ULTRAFAST RECTIFIER 4.0 AMPERES, 800−1000 VOLTS** - Ultrafast 75 Nanosecond Recovery Time - 175°C Operating Junction Temperature - Low Forward Voltage - Low Leakage Current - High Temperature Glass Passivated Junction - Reverse Voltage to 1000 V - These are Pb−Free Devices* ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 1.1 Gram (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds **AXIAL LEAD CASE 267 STYLE 1** ## **MARKING DIAGRAM** - Shipped in Plastic Bags, 5,000 per Bag - Available Tape and Reel, 1,500 per Reel, by Adding a “RL’’ Suffix to the Part Number - Polarity: Cathode indicated by Polarity Band **MAXIMUM RATINGS** **Rating Symbol Value Unit** Peak Repetitive Reverse Voltage VRRM V Working Peak Reverse Voltage VRWM DC Blocking Voltage MUR480E VR 800 MUR4100E 1000 Average Rectified Forward Current(Square Wave; Mounting Method #3 Per Note 2) IF(AV) TA4.0 @ = 35 ° C A Non−Repetitive Peak Surge Current IFSM 70 A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction and Storage Temperature TJ, Tstg −65 to ° C Range +175 ~~=H~~ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A MUR 4xxx YYWW A = Assembly Location MUR4xxx = Device Number (see page 2) YY = Year WW = Work Week = Pb−Free Package (Note: Microdot may be in either location) ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2013 **May, 2013 − Rev. 9** **MUR480E/D** **MUR480EG, MUR4100EG** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Maximum Thermal Resistance, Junction−to−Ambient|R�JA|See Note 2|°C/W| ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 1)
(iF= 3.0 A, TJ= 150°C)
(iF= 3.0 A, TJ= 25°C)
(iF= 4.0 A, TJ= 25°C)|vF|1.53
1.75
1.85|V| |Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ= 150°C)
(Rated dc Voltage, TJ= 25°C)|iR|900
25|�A| |Maximum Reverse Recovery Time
(IF= 1.0 Amp, di/dt = 50 Amp/�s)
(IF= 0.5 Amp, iR= 1.0 Amp, IREC= 0.25 Amp)|trr|100
75|ns| |Maximum Forward Recovery Time
(IF= 1.0 Amp, di/dt = 100 Amp/�s, Recovery to 1.0 V)|tfr|75|ns| |Controlled Avalanche Energy (See Test Circuit in Figure 6)|WAVAL|20|mJ| |Typical Peak Reverse Recovery Current
(IF= 1.0 A, di/dt = 50 A/�s)|IRM|2|A| 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2.0%. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Marking**|**Package**|**Shipping**†| |MUR480E|MUR480E|Axial Lead*|500 Units / Bulk| |MUR480EG||Axial Lead*|500 Units / Bulk| |MUR480ERL||Axial Lead*|1500 / Tape & Reel| |MUR480ERLG||Axial Lead*|1500 / Tape & Reel| |MUR480ES|MUR480ES|Axial Lead*|500 Units / Bulk| |MUR480ESG||Axial Lead*|500 Units / Bulk| |MUR4100E|MUR4100E|Axial Lead*|500 Units / Bulk| |MUR4100EG||Axial Lead*|500 Units / Bulk| |MUR4100ERL||Axial Lead*|1500 / Tape & Reel| |MUR4100ERLG||Axial Lead*|1500 / Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. **http://onsemi.com** **2** **MUR480EG, MUR4100EG** ## **MUR480EG, MUR4100EG** **==> picture [489 x 624] intentionally omitted <==** **----- Start of picture text -----**
20 1000
400200200 T J = 175°C°CC
10 TJ = 175°C 100°C 25°C 100402010402010201010 100°C°CC
7.0 4.0
2.0
5.0 1.0 25°C°CC
0.4
0.2
0.1
3.0 0.04 *
The curves shown are typical for the highest voltage
0.02
0.01 device in the voltage grouping. Typical reverse current
2.0 0.004 for lower voltage selections can be estimated from thesege selections can be estimated from thesee selections can be estimated from these
0.002 same curves if V R is sufficiently below rated V R .
0.001
0 100 200 300 400 500 600 700 800 900 1000
1.0 VR, REVERSE VOLTAGE (VOLTS)R, REVERSE VOLTAGE (VOLTS), REVERSE VOLTAGE (VOLTS)
0.7 Figure 2. Typical Reverse Current*
0.5
0.3 10
Rated VR
0.2 8.0 R�JA = 28°C/W
0.1 6.0
0.07
4.0 dc
0.05
SQUARE WAVE
2.0
0.03
0.02 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 0 50 100 150 200 250
vF, INSTANTANEOUS VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C)
Figure 1. Typical Forward Voltage Figure 3. Current Derating
(Mounting Method #3 Per Note 2)
10 70
9.0 TJ = 175J = 175= 175 ° C 60
50
8.0
5.0
7.0 40
TJ = 25°C
6.0
10 30
5.0 (Capacitive IPKPK =20
4.0 Load) IAVAV dc 20
3.0
SQUAREWAVE
2.0
10
1.0 9.0
8.0
0
7.0
0 1.0 2.0 3.0 4.0 5.0 0 10 20 30 40 50
IF(AV), AVERAGE FORWARD CURRENT (AMPS) , AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)
�
, REVERSE CURRENT ( A)
IR
, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF
, AVERAGE FORWARD CURRENT (AMPS)
IF(AV)
C, CAPACITANCE (pF)
, AVERAGE POWER DISSIPATION (WATTS)
PF(AV)
**----- End of picture text -----**
**==> picture [245 x 171] intentionally omitted <==** **----- Start of picture text -----**
1000
400200200 T J = 175°C°CC
100°C°CC
100402010402010201010
4.0
2.0
1.0 25°C°CC
0.4
0.2
0.1
0.04 *
The curves shown are typical for the highest voltage
0.02
0.01 device in the voltage grouping. Typical reverse current
for lower voltage selections can be estimated from thesege selections can be estimated from thesee selections can be estimated from these
0.004
0.002 same curves if V R is sufficiently below rated V R .
0.001
0 100 200 300 400 500 600 700 800 900 1000
VR, REVERSE VOLTAGE (VOLTS)R, REVERSE VOLTAGE (VOLTS), REVERSE VOLTAGE (VOLTS)
�
, REVERSE CURRENT ( A)
IR
**----- End of picture text -----**
**==> picture [239 x 175] intentionally omitted <==** **----- Start of picture text -----**
10
9.0 TJ = 175J = 175= 175 ° C
8.0
5.0
7.0
6.0
10
5.0 (Capacitive IPKPK =20
4.0 Load) IAVAV dc
3.0
SQUAREWAVE
2.0
1.0
0
0 1.0 2.0 3.0 4.0 5.0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
, AVERAGE POWER DISSIPATION (WATTS)
PF(AV)
**----- End of picture text -----**
**Figure 4. Power Dissipation** **Figure 5. Typical Capacitance** **http://onsemi.com** **3** **MUR480EG, MUR4100EG** **==> picture [493 x 203] intentionally omitted <==** **----- Start of picture text -----**
+VDD
IL 40 �H COIL
BVDUT
VD
ID
MERCURY
SWITCH ID
IL
DUT
S1
VDD
t0 t1 t2 t
**----- End of picture text -----**
**Figure 6. Test Circuit** **Figure 7. Current−Voltage Waveforms** The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 8, shows the information obtained for the MUR8100E (similar die construction as the MUR4100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. Although it is not recommended to design for this condition, the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. **==> picture [450 x 165] intentionally omitted <==** **----- Start of picture text -----**
EQUATION (1): CH1 500V A 20 � s 953 V VERT CHANNEL 2:
CH2 50mV IL
BVDUT 0.5 AMPS/DIV.
LI [2]
WAVAL � [1] 2 LPK [�] BVDUT–VDD �
CHANNEL 1:
VDUT
EQUATION (2): 500 VOLTS/DIV.
LI [2]
WAVAL � [1] 2 LPK
TIME BASE:
20 �s/DIV.
1 ACQUISITIO N S 217:33 HRS
SAVEREF SOU R CE STACK
CH1 CH2 REF REF
**----- End of picture text -----**
**Figure 8. Current−Voltage Waveforms** **http://onsemi.com** **4** # **MUR480EG, MUR4100EG** # **NOTE 2 − AMBIENT MOUNTING DATA** Data shown for thermal resistance junction−to−ambient (R�JA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. **==> picture [495 x 608] intentionally omitted <==** **----- Start of picture text -----**
TYPICAL VALUES FOR R � JA IN STILL AIR
Mounting Lead Length, L (IN)
Method 1/8 1/4 1/2 3/4 Units
1 50 51 53 55 ° C/W
2 R � JA 58 59 61 63 ° C/W
3 28 ° C/W
MOUNTING METHOD 1
P.C. Board Where Available Copper
Surface area is small.
L L
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
MOUNTING METHOD 2
Vector Push−In Terminals T−28
ÉÉÉÉÉÉÉÉÉÉÉÉ L L
ÉÉÉÉÉÉÉÉÉÉÉÉ
MOUNTING METHOD 3
P.C. Board with
1−1/2 ″ x 1−1/2 ″ Copper Surface
ÉÉ
L = 1/2 ″
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
Board Ground Plane
ÉÉ
ÉÉ
http://onsemi.com
5
**----- End of picture text -----**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [410 x 265] intentionally omitted <==** **----- Start of picture text -----**
AXIAL LEAD
CASE 267−05
ISSUE G DATE 06/06/2000
SCALE 1:1 NOTES:
1. DIMENSIONS AND TOLERANCING PER ANSI
K A 2. Y14.5M, 1982.CONTROLLING DIMENSION: INCH.
D + 3. 267-04 OBSOLETE, NEW STANDARD 267-05.
1 2
= INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.287 0.374 7.30 9.50
B [S ibe B 0.189 0.209 4.80 5.30
K D 0.047 0.051 1.20 1.30
rE] BE K 1.000 --- 25.40 E ---
STYLE 1: STYLE 2:
PIN 1. CATHODE (POLARITY BAND) NO POLARITY
2. ANODE
**----- End of picture text -----**
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