# Bipolar Pre-Biased / Digital Transistor, Dual PNP, 50 V, 100 mA, 10 kohm, 47 kohm ![Product image](https://novapart.co/image/farnell:2774840RL/) **URL**: https://novapart.co/products/MUN5114DW1T1G/bipolar-pre-biased-digital-transistor-dual-pnp-50 **SKU**: MUN5114DW1T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Pre-Biased / Digital Bipolar Transistors **Price**: €0.0420 **Stock**: 1000+ **Lead Time**: 92 days (indicative) ## Description Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6 Pin | | Product Range | - | | Qualification | - | | Power Dissipation | 385mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | Dual PNP | | Transistor Case Style | SOT-363 | | Base Input Resistor R1 | 10kohm | | Dc Current Gain Hfe Min | 80hFE | | Base Emitter Resistor R2 | 47kohm | | Operating Temperature Max | 150°C | | Continuous Collector Current | 100mA | | Collector Emitter Voltage Max Npn | - | | Collector Emitter Voltage Max Pnp | 50V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2774840RL/) ## MUN5114DW1, NSBA114YDXV6, NSBA114YDP6 ## Dual PNP Bias Resistor Transistors R1 = 10 k 09 R2 = 47 k 09 **PNP Transistors with Monolithic Bias Resistor Network** This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. ## **Features** - S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable ## **www.onsemi.com** ON ~~Semiconducto~~ r® ## **PIN CONNECTIONS** **==> picture [149 x 120] intentionally omitted <==** **----- Start of picture text -----**
(3) (2) (1)
R1 R2
Q1
Q2
R2
R1
(4) (5) (6)
**----- End of picture text -----**
## **MARKING DIAGRAMS** - Simplifies Circuit Design - Reduces Board Space - Reduces Component Count - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **MAXIMUM RATINGS** (TA = 25 ° C, common for Q1 and Q2, unless otherwise noted) **Rating Symbol Max Unit** Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc Collector Current − Continuous IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc ~~———~~ Input Reverse Voltage VIN(rev) 6 Vdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **==> picture [138 x 197] intentionally omitted <==** **----- Start of picture text -----**
6
SOT−363
0D M
CASE 419B
1
SOT−563
0D M CASE 463A
1
SOT−963
Q M CASE 527AD
1
0D/Q = Specific Device Code
M = Date Code*
= Pb−Free Package
**----- End of picture text -----**
(Note: Microdot may be in either location) ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MUN5114DW1T1G,
SMUN5114DW1T1G|SOT−363|3,000 / Tape & Reel| |NSBA114YDXV6T1G|SOT−563|4,000 / Tape & Reel| |NSBA114YDP6T5G|SOT−963|8,000 / Tape & Reel| - *Date Code orientation may vary depending upon manufacturing location. - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **DTA114YD/D** **1** © Semiconductor Components Industries, LLC, 2012 **June, 2017 − Rev. 1** **MUN5114DW1, NSBA114YDXV6, NSBA114YDP6** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |**MUN5114DW1 (SOT−363) One Junction Heated**|||| |Total Device Dissipation
TA= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)|PD|187
256
1.5
2.0|mW
mW/°C| |Thermal Resistance,
(Note 1)
Junction to Ambient
(Note 2)|R�JA|670
490|°C/W| |**MUN5114DW1 (SOT−363) Both Junction Heated**(Note 3)|||| |Total Device Dissipation
TA= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)|PD|250
385
2.0
3.0|mW
mW/°C| |Thermal Resistance,
(Note 1)
Junction to Ambient
(Note 2)|R�JA|493
325|°C/W| |Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)|R�JL|188
208|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**NSBA114YDXV6 (SOT−563) One Junction Heated**|||| |Total Device Dissipation
TA= 25°C
(Note 1)
Derate above 25°C
(Note 1)|PD|357
2.9|mW
mW/°C| |Thermal Resistance,
Junction to Ambient
(Note 1)|R�JA|350|°C/W| |**NSBA114YDXV6 (SOT−563) Both Junction Heated**(Note 3)|||| |Total Device Dissipation
TA= 25°C
(Note 1)
Derate above 25°C
(Note 1)|PD|500
4.0|mW
mW/°C| |Thermal Resistance,
Junction to Ambient
(Note 1)|R�JA|250|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**NSBA114YDP6 (SOT−963) One Junction Heated**|||| |Total Device Dissipation
TA= 25°C
(Note 4)
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)|PD|231
269
1.9
2.2|mW
mW/°C| |Thermal Resistance,
(Note 4)
Junction to Ambient
(Note 5)|R�JA|540
464|°C/W| |**NSBA114YDP6 (SOT−963) Both Junction Heated**(Note 3)|||| |Total Device Dissipation
TA= 25°C
(Note 4)
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)|PD|339
408
2.7
3.3|mW
mW/°C| |Thermal Resistance,
(Note 4)
Junction to Ambient
(Note 5)|R�JA|369
306|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 4. FR−4 @ 100 mm[2] , 1 oz. copper traces, still air. 5. FR−4 @ 500 mm[2] , 1 oz. copper traces, still air. **www.onsemi.com** **2** ## **MUN5114DW1, NSBA114YDXV6, NSBA114YDP6** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C, common for Q1 and Q2, unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C, common for Q1and Q2,|unless otherwis|e noted)|||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Base Cutoff Current
(VCB= 50 V, IE= 0)|ICBO|−|−|100|nAdc| |Collector−Emitter Cutoff Current
(VCE= 50 V, IB= 0)|ICEO|−|−|500|nAdc| |Emitter−Base Cutoff Current
(VEB= 6.0 V, IC= 0)|IEBO|−|−|0.2|mAdc| |Collector−Base Breakdown Voltage
(IC= 10�A, IE= 0)|V(BR)CBO|50|−|−|Vdc| |Collector−Emitter Breakdown Voltage (Note 6)
(IC= 2.0 mA, IB= 0)|V(BR)CEO|50|−|−|Vdc| |**ON CHARACTERISTICS**|||||| |DC Current Gain (Note 6)
(IC= 5.0 mA, VCE= 10 V)|hFE|80|140|−|| |Collector−Emitter Saturation Voltage (Note 6)
(IC= 10 mA, IB= 0.3 mA)|VCE(sat)|−|−|0.25|Vdc| |Input Voltage (off)
(VCE= 5.0 V, IC= 100�A)|Vi(off)|−|0.7|−|Vdc| |Input Voltage (on)
(VCE= 0.2 V, IC= 1.0 mA)|Vi(on)|−|0.9|−|Vdc| |Output Voltage (on)
(VCC= 5.0 V, VB= 2.5 V, RL= 1.0 k�)|VOL|−|−|0.2|Vdc| |Output Voltage (off)
(VCC= 5.0 V, VB= 0.5 V, RL= 1.0 k�)|VOH|4.9|−|−|Vdc| |Input Resistor|R1|7.0|10|13|k�| |Resistor Ratio|R1/R2|0.17|0.21|0.25|| 6. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. **==> picture [412 x 172] intentionally omitted <==** **----- Start of picture text -----**
400
350
300
(1) SOT−363; 1.0 x 1.0 inch Pad
250 (2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm [2] , 1 oz. copper trace
200
(1) (2) (3)
150
100
50
0
−50 −25 0 25 50 75 100 125 150
AMBIENT TEMPERATURE ( ° C)
, POWER DISSIPATION (mW)
D
P
**----- End of picture text -----**
**Figure 1. Derating Curve** **www.onsemi.com** **3** **MUN5114DW1, NSBA114YDXV6, NSBA114YDP6** ## **TYPICAL CHARACTERISTICS MUN5114DW1, NSBA114YDXV6** **==> picture [488 x 609] intentionally omitted <==** **----- Start of picture text -----**
1
1000
IC/IB = 10 VCE = 10 V 25 ° C 150 ° C
25 ° C 100 −55 ° C
0.1 150 ° C
10
−55 ° C
0.01 1
0 10 20 30 40 50 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC Figure 3. DC Current Gain
10 100
9 f = 10 kHz °
−55 C
8 ITEA = = 250 A ° C 10
7
6 1
5 25 ° C
4 0.1
3 150 ° C
2
0.01
1 VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7
VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
100
10 25 ° C
−55 ° C
1
150 ° C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
, DC CURRENT GAIN
FE
h
, COLLECTOR−EMITTER VOLTAGE (V)
CE(sat)
V
, OUTPUT CAPACITANCE (pF)Cob , COLLECTOR CURRENT (mA)IC
, INPUT VOLTAGE (V)
in
V
**----- End of picture text -----**
**Figure 6. Input Voltage vs. Output Current** **www.onsemi.com** **4** **MUN5114DW1, NSBA114YDXV6, NSBA114YDP6** ## **TYPICAL CHARACTERISTICS NSBA114YDP6** **==> picture [488 x 390] intentionally omitted <==** **----- Start of picture text -----**
1
1000
IC/IB = 10 VCE = 10 V
25 ° C 25 ° C 150 ° C
100
−55 ° C
150 ° C
0.1
−55 ° C 10
0.01 1
0 10 20 30 40 50 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain
7 100
f = 10 kHz
6 ITEA = 0 A = 25 ° C 10 −55 ° C
5
1
4
3 0.1 25 ° C
2
0.01
1 150 ° C
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 12 11 10 11
VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V)
, DC CURRENT GAIN
FE
h
, COLLECTOR−EMITTER VOLTAGE (V)
CE(sat)
V
, OUTPUT CAPACITANCE (pF)Cob , COLLECTOR CURRENT (mA)IC
**----- End of picture text -----**
**Figure 9. Output Capacitance** **Figure 10. Output Current vs. Input Voltage** **==> picture [235 x 171] intentionally omitted <==** **----- Start of picture text -----**
100
10 25 ° C −55 ° C
1
150 ° C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
, INPUT VOLTAGE (V)
in
V
**----- End of picture text -----**
**Figure 11. Input Voltage vs. Output Current** **www.onsemi.com** **5** **MUN5114DW1, NSBA114YDXV6, NSBA114YDP6** ## **PACKAGE DIMENSIONS** **SC−88/SC70−6/SOT−363** CASE 419B−02 ISSUE Y |||||||||||||||||||**2X**|**2X**|**2X**|**2X**|**2X**||NOT
1.
2.
3.
4.
5.
6.
7.
**c**
**END VIEW**
**L**
**PLANE**
**ETAIL A**
**GAGE**|ES:
DIMENSIONING AND TOLERANCING PER ASME Y1
CONTROLLING DIMENSION: MILLIMETERS.
DIMENSIONS D AND E1 DO NOT INCLUDE MOLD F
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, P
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20
DIMENSIONS D AND E1 AT THE OUTERMOST EXT
THE PLASTIC BODY AND DATUM H.
DATUMS A AND B ARE DETERMINED AT DATUM H
DIMENSIONS b AND c APPLY TO THE FLAT SECTIO
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
DIMENSION b DOES NOT INCLUDE DAMBAR PROT
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.0
EXCESS OF DIMENSION b AT MAXIMUM MATERIA
TION. THE DAMBAR CANNOT BE LOCATED ON TH
RADIUS OF THE FOOT.|ES:
DIMENSIONING AND TOLERANCING PER ASME Y1
CONTROLLING DIMENSION: MILLIMETERS.
DIMENSIONS D AND E1 DO NOT INCLUDE MOLD F
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, P
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20
DIMENSIONS D AND E1 AT THE OUTERMOST EXT
THE PLASTIC BODY AND DATUM H.
DATUMS A AND B ARE DETERMINED AT DATUM H
DIMENSIONS b AND c APPLY TO THE FLAT SECTIO
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
DIMENSION b DOES NOT INCLUDE DAMBAR PROT
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.0
EXCESS OF DIMENSION b AT MAXIMUM MATERIA
TION. THE DAMBAR CANNOT BE LOCATED ON TH
RADIUS OF THE FOOT.|ES:
DIMENSIONING AND TOLERANCING PER ASME Y1
CONTROLLING DIMENSION: MILLIMETERS.
DIMENSIONS D AND E1 DO NOT INCLUDE MOLD F
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, P
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20
DIMENSIONS D AND E1 AT THE OUTERMOST EXT
THE PLASTIC BODY AND DATUM H.
DATUMS A AND B ARE DETERMINED AT DATUM H
DIMENSIONS b AND c APPLY TO THE FLAT SECTIO
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
DIMENSION b DOES NOT INCLUDE DAMBAR PROT
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.0
EXCESS OF DIMENSION b AT MAXIMUM MATERIA
TION. THE DAMBAR CANNOT BE LOCATED ON TH
RADIUS OF THE FOOT.|ES:
DIMENSIONING AND TOLERANCING PER ASME Y1
CONTROLLING DIMENSION: MILLIMETERS.
DIMENSIONS D AND E1 DO NOT INCLUDE MOLD F
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, P
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20
DIMENSIONS D AND E1 AT THE OUTERMOST EXT
THE PLASTIC BODY AND DATUM H.
DATUMS A AND B ARE DETERMINED AT DATUM H
DIMENSIONS b AND c APPLY TO THE FLAT SECTIO
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
DIMENSION b DOES NOT INCLUDE DAMBAR PROT
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.0
EXCESS OF DIMENSION b AT MAXIMUM MATERIA
TION. THE DAMBAR CANNOT BE LOCATED ON TH
RADIUS OF THE FOOT.|ES:
DIMENSIONING AND TOLERANCING PER ASME Y1
CONTROLLING DIMENSION: MILLIMETERS.
DIMENSIONS D AND E1 DO NOT INCLUDE MOLD F
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, P
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20
DIMENSIONS D AND E1 AT THE OUTERMOST EXT
THE PLASTIC BODY AND DATUM H.
DATUMS A AND B ARE DETERMINED AT DATUM H
DIMENSIONS b AND c APPLY TO THE FLAT SECTIO
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
DIMENSION b DOES NOT INCLUDE DAMBAR PROT
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.0
EXCESS OF DIMENSION b AT MAXIMUM MATERIA
TION. THE DAMBAR CANNOT BE LOCATED ON TH
RADIUS OF THE FOOT.|ES:
DIMENSIONING AND TOLERANCING PER ASME Y1
CONTROLLING DIMENSION: MILLIMETERS.
DIMENSIONS D AND E1 DO NOT INCLUDE MOLD F
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, P
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20
DIMENSIONS D AND E1 AT THE OUTERMOST EXT
THE PLASTIC BODY AND DATUM H.
DATUMS A AND B ARE DETERMINED AT DATUM H
DIMENSIONS b AND c APPLY TO THE FLAT SECTIO
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
DIMENSION b DOES NOT INCLUDE DAMBAR PROT
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.0
EXCESS OF DIMENSION b AT MAXIMUM MATERIA
TION. THE DAMBAR CANNOT BE LOCATED ON TH
RADIUS OF THE FOOT.|ES:
DIMENSIONING AND TOLERANCING PER ASME Y1
CONTROLLING DIMENSION: MILLIMETERS.
DIMENSIONS D AND E1 DO NOT INCLUDE MOLD F
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, P
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20
DIMENSIONS D AND E1 AT THE OUTERMOST EXT
THE PLASTIC BODY AND DATUM H.
DATUMS A AND B ARE DETERMINED AT DATUM H
DIMENSIONS b AND c APPLY TO THE FLAT SECTIO
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
DIMENSION b DOES NOT INCLUDE DAMBAR PROT
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.0
EXCESS OF DIMENSION b AT MAXIMUM MATERIA
TION. THE DAMBAR CANNOT BE LOCATED ON TH
RADIUS OF THE FOOT.| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**2X**|||||||||||**D**
**A**|||||||**E1**
aaa
H
D
**D**
**L2**|||||**H**|**L**
**ETAIL A**
|||||||| ||||||||||||||||||||||||||||||||| |||||||**E**|||||||||||||||||||||||||| ||||||||||||||||||||||||||||||||| ||||||||||||**6**|||**5**|**4**|||**E**|||||**D**||||||||| ||||||||**E**||||||||||||||||||||||||| ||||||||||||**1**|||**2**|**3**||||||||||||||||| ||||||||||||||||||||||||||||||||| |||||||||||||||||||C
ddd M
**b**
**6X**
aaa
C
**2X 3 TIPS**||aaa|C||||||||||| ||bbb||H||D||||||||||||||||||||||||||| ||||||||||**e**||||||||||||||||**DIM**|**MILLIMETERS**|||**INCHES**||| |||||||||||||||||||||||||||**MIN**|**NOM**|**MAX**|**MIN**|**NOM**|**MAX**| ||||||||||||||||||||||||||**A**|−−−|−−−|1.10|−−−|−−−|0.043| ||||||||||||||||||||ddd M|||C|A-B
D||**A1**|0.00|−−−|0.10|0.000|−−−|0.004| ||||||||||||||||||||||||||**A2**|070|090|100|0027|0035|0039| |**6X**|||||||||||||||||||||||||**b**
|0.15
.|0.20
.|0.25
.|0.006
.|0.008
.|0.010
.| ||||||||||||||||||||||||||**C**|0.08|0.15|0.22|0.003|0.006|0.009| ||||||||||||||||||||||||||**D**|180|200|220|0070|0078|0086| ||||||||||||||||||||||||||**E**|.
2.00|.
2.10|.
2.20|.
0.078|.
0.082|.
0.086| ||||||||||||||||||||||||||**E1**|1.15|1.25|1.35|0.045|0.049|0.053| ||||||||||||||||||||||||||**e**|0.65 BSC|||0.026 BSC||| ||||||||||||||||||||||||||**L**|0.26|0.36|0.46|0.010|0.014|0.018| ||||||||||||||||||||||||||||||||| ||||||||||||||||||||||||||**L2**|0.15 BSC|||0.006 BSC||| ||||||||||||||||||||||||||**aaa**
**bbb**|0.15
030|||0.006
0012||| |||||ccc||||C|||||||||||||||||**ccc**|.
0.10|||.
0.004||| ||||||||||||||||||||||||||**ddd**|010|||0004||| |||||||||||||||||||||||||||.
.|||||| - NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. ## **RECOMMENDED SOLDERING FOOTPRINT*** **==> picture [122 x 99] intentionally omitted <==** **----- Start of picture text -----**
6X 6X
0.30 0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **6** **MUN5114DW1, NSBA114YDXV6, NSBA114YDP6** ## **PACKAGE DIMENSIONS** **SOT−563, 6 LEAD** CASE 463A ISSUE G **==> picture [185 x 107] intentionally omitted <==** **----- Start of picture text -----**
D
A
−X−
L
6 5 4
E
−Y− HE
1 2 3
b 5 PL6 C
e 0.08 (0.003) M X Y
**----- End of picture text -----**
**==> picture [158 x 132] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.50 0.55 0.60 0.020 0.021 0.023
b 0.17 0.22 0.27 0.007 0.009 0.011
C 0.08 0.12 0.18 0.003 0.005 0.007
D 1.50 1.60 1.70 0.059 0.062 0.066
E 1.10 1.20 1.30 0.043 0.047 0.051
e 0.5 BSC 0.02 BSC
L 0.10 0.20 0.30 0.004 0.008 0.012
HE 1.50 1.60 1.70 0.059 0.062 0.066
**----- End of picture text -----**
## **SOLDERING FOOTPRINT*** **==> picture [154 x 172] intentionally omitted <==** **----- Start of picture text -----**
0.3
0.0118
0.45
0.0177
1.0
1.35 0.0394
0.0531
0.5 0.5
0.0197 0.0197
SCALE 20:1
� inches [mm] �
**----- End of picture text -----**
- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **7** **MUN5114DW1, NSBA114YDXV6, NSBA114YDP6** ## **PACKAGE DIMENSIONS** **SOT−963** CASE 527AD ISSUE E **==> picture [154 x 204] intentionally omitted <==** **----- Start of picture text -----**
D X
Y
6 5 4
E
1 2 3
ee
TOP VIEW |
e 6X L
Aaa
6X L2 6X b
0.08 X Y
t BOTTOM VIEW > ec o
**----- End of picture text -----**
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A
HE
|4
C — >|
SIDE VIEW
**----- End of picture text -----**
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NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.34 0.37 0.40
b 0.10 0.15 0.20
C 0.07 0.12 0.17
D 0.95 1.00 1.05
E 0.75 0.80 0.85
e 0.35 BSC
H E 0.95 1.00 1.05
L 0.19 REF
L2 0.05 0.10 0.15
**----- End of picture text -----**
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RECOMMENDED
MOUNTING FOOTPRINT
6X 6X
0.20 a les 0.35
PACKAGE
OUTLINE
PO 1.20
0.35 he
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
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