# Bipolar (BJT) Single Transistor, NPN, 50 V, 100 mA, 200 mW, SC-59, Surface Mount ![Product image](https://novapart.co/image/farnell:2845320/) **URL**: https://novapart.co/products/MSC2712GT1G/bipolar-bjt-single-transistor-npn-50-v-100-ma-200 **SKU**: MSC2712GT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0200 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:50MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; T ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 200mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 50MHz | | Transistor Case Style | SC-59 | | Dc Current Gain Hfe Min | 200hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 100mA | | Collector Emitter Voltage Max | 50V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2845320/) ## MSC2712GT1G, MSC2712YT1G ## General Purpose Amplifier Transistor **NPN Surface Mount** ## **www.onsemi.com** ## **Features** - Moisture Sensitivity Level: 1 - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **SC−59 CASE 318D STYLE 1** ## **MARKING DIAGRAMS** **MAXIMUM RATINGS** (TA = 25 ° C) 12G M 12Y M **Rating Symbol Value Unit** Collector−Base Voltage V(BR)CBO 60 Vdc 12M, 12Y = Specific Device Code Collector−Emitter Voltage V(BR)CEO 50 Vdc M = Date Code = Pb−Free Package Emitter−Base Voltage V(BR)EBO 7.0 Vdc (Note: Microdot may be in either location) Collector Current − Continuous IC 100 mAdc ~~ene~~ Collector Current − Peak IC(P) 200 mAdc ~~Gad~~ COLLECTOR ~~Gs~~ **THERMAL CHARACTERISTICS** 3 **Characteristic Symbol Max Unit** Power Dissipation PD 200 mW Junction Temperature TJ 150 ° C ~~===]~~ Storage Temperature Tstg −55 to +150 ° C 1 2 Stresses exceeding those listed in the Maximum Ratings table may damage the BASE EMITTER Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **ORDERING INFORMATION** **Device Package Shipping**[†] MSC2712GT1G SC−59 3000 / Tape & Reel (Pb−Free) MSC2712YT1G SC−59 3000 / Tape & Reel (Pb−Free) ~~Ft~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2015 **February, 2015 − Rev. 7** **MSC2712GT1/D** ## **MSC2712GT1G, MSC2712YT1G** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise not|ed)|||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |Collector−Emitter Breakdown Voltage
(IC= 2.0 mAdc, IB= 0)|V(BR)CEO|50|−|Vdc| |Collector−Base Breakdown Voltage
(IC= 10�Adc, IE= 0)|V(BR)CBO|60|−|Vdc| |Emitter−Base Breakdown Voltage
(IE= 10�Adc, IC= 0)|V(BR)EBO|7.0|−|Vdc| |Collector−Base Cutoff Current
(VCB= 45 Vdc, IE= 0)|ICBO|−|0.1|�Adc| |Collector−Emitter Cutoff Current
(VCE= 10 Vdc, IB= 0)
(VCE= 30 Vdc, IB= 0)
(VCE= 30 Vdc, IB= 0, TA= 80°C)|ICEO|−
−
−|0.1
2.0
1.0|�Adc
�Adc
mAdc| |DC Current Gain (Note 1)
(VCE= 6.0 Vdc, IC= 2.0 mAdc)
MSC2712GT1G
MSC2712YT1G|hFE|200
120|400
240|−| |Collector−Emitter Saturation Voltage
(IC= 100 mAdc, IB= 10 mAdc)|VCE(sat)|−|0.5|Vdc| |Current−Gain − Bandwidth Product
(IC= 1 mA, VCE= 10.0 V, f = 10 MHz)|fT|50|−|MHz| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, D.C. ≤ 2%. **www.onsemi.com** **2** **MSC2712GT1G, MSC2712YT1G** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [240 x 173] intentionally omitted <==** **----- Start of picture text -----**
280
6.0 mA 3.0 mA 2.0 mA
240 5.0 mA
200
1.0 mA
160
120 0.5 mA
80
IB = 0.2 mA
40
0 TA = 25 ° C
0 1 2 3 4 5 6
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (mA)
IC
**----- End of picture text -----**
**Figure 1. Collector Saturation Voltage** **==> picture [237 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000
TA = 100 ° C
25 ° C
−25 ° C
100
VCE = 1.0 V
10
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
, DC CURRENT GAIN
FE
h
**----- End of picture text -----**
**Figure 2. DC Current Gain** **==> picture [488 x 407] intentionally omitted <==** **----- Start of picture text -----**
1000 1
IC/IB = 10
TA = 100 ° C
25 ° C
−25 ° C TA = 100 ° C
25 ° C
100 0.1 −25 ° C
VCE = 6.0 V
10 0.01
1 10 100 1000 1 10 100 1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain Figure 4. VCE(sat) versus IC
10 10,000
COMMON EMITTER 25 ° C
VCE = 6 V TA = 100 ° C
1000
−25 ° C
100
1
10
TA = 25 ° C 1
IC/IB = 10
0.1 0.1
1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
IC, COLLECTOR CURRENT (mA) VBE, BASE−EMITTER VOLTAGE (V)
(V)
, DC CURRENT GAIN
FE
h
, MAXIMUM COLLECTOR VOLTAGE
CE(sat)
V
A)
�
VOLTAGE (V)
, BASE CURRENT (
IB
BASE−EMITTER SATURATION
**----- End of picture text -----**
**Figure 5. VBE(sat) versus IC** **Figure 6. Base−Emitter Voltage** **www.onsemi.com** **3** **MSC2712GT1G, MSC2712YT1G** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [240 x 173] intentionally omitted <==** **----- Start of picture text -----**
10
NPN
100 ms 10 ms 1 ms
1
Thermal Limit
0.1
0.01
Single Pulse Test at TA = 25 ° C
0.001
0.1 1 10 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 7. NPN Safe Operating Area** **www.onsemi.com** **4** **MSC2712GT1G, MSC2712YT1G** ## **PACKAGE DIMENSIONS** **SC 9** CASE 318D 4 ISSUE H **==> picture [406 x 379] intentionally omitted <==** **----- Start of picture text -----**
D | | — NOTES: 2 CONTROLLINGDIMENSION MILLIMETERS MILLMETER. INCHES
3 | DIM -_—— MIN NOM MAX MIN NOM MAX
HE 1 2 E aa A1A a 1.000.01 es 1.150.06 eeee 1.300.10 ee 0.0390.001 0.0450.002 0.0510.004
b 0.35 0.43 0.50 0.014 0.017 0.020
| c 0.09 se 0.14 0.18 0.003 0.005 0.007
D 2.70 2.90 3.10 0.106 0.114 0.122
b E 1.30 1.50 1.70 0.051 0.059 0.067
t ee t a es ee
e 1.70 1.90 2.10 0.067 0.075 0.083
a e a a
a L 0.20 es 0.40 0.60 ee 0.008 0.016 0.024
4 a H E 2.50 2.80 3.00 0.099 0.110 0.118
A C STYLE 1:
PIN 1. BASE
2. EMITTER
, nn)OI fh L 4 3. COLLECTOR
A1
SOLDERING FOOTPRINT*
0.95
0.95 0.037
0.037
2.4
0.094
1.0
0.039
0.8 SCALE 10:1 mm
0.031 oe A inches
*For additional information on our Pb ree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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