MSC020SDA120B

## **MSC025SMA120J Silicon Carbide N-Channel Power MOSFET** 

## **1 Product Overview** 

This section shows the product overview for the MSC025SMA120J device. 

## **1.1** 

## **Features** 

The following are key features of the MSC025SMA120J device: 

- Low capacitances and low gate charge 

- Fast switching speed due to low internal gate resistance (ESR) 

- Stable operation at high junction temperature, TJ(max) = 175 °C 

- Fast and reliable body diode 

- Superior avalanche ruggedness 

- RoHS compliant 

- Isolated voltage to 2500 V 

## **1.2** 

## **Benefits** 

The following are benefits of the MSC025SMA120J device: 

- High efficiency to enable lighter, more compact system 

- Simple to drive and easy to parallel 

- Improved thermal capabilities and lower switching losses 

- Eliminates the need for external freewheeling diode 

- Lower system cost of ownership 

## **1.3** 

## **Applications** 

The MSC025SMA120J device is designed for the following applications: 

- PV inverter, converter, and industrial motor drives 

- Smart grid transmission and distribution 

- Induction heating and welding 

- H/EV powertrain and EV charger 

- Power supply and distribution 

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## **2 Device Specifications** 

This section shows the specifications for the MSC025SMA120J device. 

## **2.1 Absolute Maximum Ratings** 

The following table shows the absolute maximum ratings for the MSC025SMA120J device. 

**Table 1 • Absolute Maximum Ratings** 

|Symbol|Parameter|Ratings|Unit|
|---|---|---|---|
|VDSS|Drain source voltage|1200|V|
|ID|Continuous drain current at T = 25 °C<br>C|77|A|
||Continuous drain current at T = 100 °C<br>C|54||
|IDM|Pulsed drain current1|275||
|VGS|Gate-source voltage|25 to –10|V|
|PD|Total power dissipation at T = 25 °C<br>C|278|W|
||Linear derating factor|1.67|W/°C|



## Note: 

1.  Repetitive rating: pulse width and case temperature limited by maximum junction temperature. 

The following table shows the thermal and mechanical characteristics for the MSC025SMA120J device. 

**Table 2 • Thermal and Mechanical Characteristics** 

|Symbol|Characteristic|Min|Typ|Max|Unit|
|---|---|---|---|---|---|
|RθJC|Junction-to-case thermal resistance||0.36|0.54|°C/W|
|TJ|Operating junction temperature|–55||175|°C|
|TSTG|Storage temperature|–55||150||
|VISOLATION|RMS voltage (50 Hz–60 Hz sinusoidal waveform from terminals to|2500|||V|
||mounting base for 1 minute)|||||
||Mounting torque, M4 screw|||10|lbf-in|
|||||1.1|N-m|
|Wt|Package weight||1.03||oz|
||||29.2||g|



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## **2.2 Electrical Performance** 

The following table shows the static characteristics for the MSC025SMA120J device. T  = 25 °C unless J otherwise specified. 

**Table 3 • Static Characteristics** 

|Symbol|Symbol||Characteristic|Test Conditions|Min|Typ|Max|Unit|
|---|---|---|---|---|---|---|---|---|
|V(BR)DSS|||Drain-source breakdown voltage|V = 0 V, I = 100 µA<br>GS<br>D|1200|||V|
|RDS(on)|||Drain-source on resistance1|V = 20 V, I = 40 A<br>GS<br>D||25|31|mΩ|
|VGS(th)|||Gate-source threshold voltage|V = V , I = 1 mA<br>GS<br>DS<br>D|1.8|2.8||V|
|ΔV<br>GS(th)|/ΔT|J|Threshold voltage coefficient|V = V , I = 1 mA<br>GS<br>DS<br>D||–3.5||mV/°C|
|IDSS|||Zero gate voltage drain current|V = 1200 V, V = 0 V<br>DS<br>GS|||100|µA|
|||||V = 1200 V, V = 0 V<br>DS<br>GS|||500||
|||||T  = 125 °C<br>J|||||
|IGSS|||Gate-source leakage current|V = 20 V/–10 V<br>GS|||±100|nA|



Note: 

1.  Pulse test: pulse width < 380 µs, duty cycle < 2%. 

The following table shows the dynamic characteristics for the MSC025SMA120J device. T  = 25 °C unless J otherwise specified. 

**Table 4 • Dynamic Characteristics** 

|Symbol|Characteristic|Test Conditions|Test Conditions|Test Conditions|Min|Typ|Max|Unit|
|---|---|---|---|---|---|---|---|---|
|Ciss|Input capacitance|V = 0 V<br>GS||||3020||pF|
|Crss|Reverse transfer|V = 1000 V<br>DD||||25|||
||capacitance|V = 25 mV<br>AC<br>ƒ = 1 MHz|||||||
|Coss|Output capacitance|||||270|||
|Qg|Total gate charge|V = –5 V/20 V<br>GS||= –5 V/20 V||232||nC|
|Qgs|Gate-source charge|V = 800 V<br>DD||||41|||
|||I = 40 A<br>D|||||||
|Qgd|Gate-drain charge|||||50|||
|td(on)|Turn-on delay time|V = 800 V<br>DD||||14||ns|
|tr|Current rise time|V = 0 V/20 V<br>GS|= 0 V/20 V|||11|||
|||I = 40 A<br>D|||||||
|td(off)|Turn-off delay time|R<br>= 3.3 Ω<br>G(ext)|1|||69|||
|tf|Current fall time|Freewheeling diode =||Freewheeling diode =||33|||
|||MSC020SDA120B|||||||
|Eon2|Turn-on switching energy2|||||1040||µJ|
|Eoff|Turn-off switching energy|||||670|||
|td(on)|Turn-on delay time|V = 800 V<br>DD||||12||ns|
|tr|Current rise time|V = 0 V/20 V<br>GS|= 0 V/20 V|||11|||
|||I = 40 A<br>D|||||||
|td(off)|Turn-off delay time|R<br>= 3.3 Ω<br>G(ext)|= 3.3 Ω<br>1|||69|||
|tf|Current fall time|T = 150 °C<br>C||||33|||
|Eon2|Turn-on switching energy2|Freewheeling diode =<br>MSC020SDA120B||||975||µJ|
|Eoff|Turn-off switching energy|||||950|||
|ESR|Equivalent series resistance|f = 1 MHz, 25 mV, drain short||f = 1 MHz, 25 mV, drain short||0.88||Ω|
|SCWT|Short circuit withstand time|V = 960 V, V <br>DS||= 20 V<br>GS||3||µs|



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|Symbol|Characteristic|Test Conditions|Min|Typ|Max|Unit|
|---|---|---|---|---|---|---|
|EAS|Avalanche energy, single|V = 150 V, V = 20 V, I = 40 A<br>DS<br>GS<br>D||3500||mJ|
||pulse||||||



Notes: 

1.  RG is the total effective external gate resistance. 

2.  Eon2 includes energy of MSC020SDA120B freewheeling diode. 

The following table shows the body diode characteristics for the MSC025SMA120J device. T  = 25 °C J unless otherwise specified. 

**Table 5 • Body Diode Characteristics** 

|Symbol|Parameter|Test Conditions|Test Conditions|Min|Typ|Max|Unit|
|---|---|---|---|---|---|---|---|
|VSD|Diode forward voltage|I = 40 A, V <br>SD|= 0 V<br>GS||4.0||V|
|||I = 40 A, V <br>SD|= –5 V<br>GS||4.2||V|
|trr|Reverse recovery time|I = 40 A, V <br>SD|= –5 V<br>GS||90||ns|
|Qrr|Reverse recovery charge|V = 800 V<br>DD<br>dl/dt = –1000 A/µs|||550||nC|
|IRRM|Reverse recovery current||||13.5||A|



## **2.3 Typical Performance Curves** 

This section shows the typical performance curves for the MSC025SMA120J device. 

**Figure 1 • Drain Current vs. Drain-to-Source Voltage** 

**Figure 2 • Drain Current vs. Drain-to-Source Voltage** 

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## **Figure 3 • Drain Current vs. Drain-to-Source Voltage** 

**Figure 5 • RDS(on) vs. Junction Temperature** 

**Figure 7 • Capacitance vs. Drain-to-Source Voltage** 

**Figure 4 • Drain Current vs. Drain-to-Source Voltage** 

**Figure 6 • Gate Charge Characteristics** 

**Figure 8 • IDM vs. Gate-to-Source Voltage** 

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**Figure 10 • IDM vs. VDS Third Quadrant Conduction** 

**Figure 9 • IDM vs. VDS Third Quadrant Conduction** 

**Figure 11 • VGS(th) vs. Junction Temperature** 

**Figure 12 • Forward Safe Operating Area** 

**Figure 13 • Maximum Transient Thermal Impedance** 

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**3 Package Specification** 

This section shows the package specification for the MSC025SMA120J device. 

## **3.1 Package Outline Drawing** 

This section shows the SOT-227 package drawing for the MSC025SMA120J device. The dimensions in the figure below are in millimeters and (inches). 

**Figure 14 • Package Outline Drawing** 

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