# Bipolar (BJT) Single Transistor, PNP, 300 V, 500 mA, 150 mW, SC-70, Surface Mount

![Product image](https://novapart.co/image/farnell:2845319/)

**URL**: https://novapart.co/products/MSB92ASWT1G/bipolar-bjt-single-transistor-pnp-300-v-500-ma-150
**SKU**: MSB92ASWT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0410
**Stock**: 10+
**Lead Time**: 205 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:150mW; DC Collector Current:500mA; DC Current Gain hFE:120hFE

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 150mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 50MHz |
| Transistor Case Style | SC-70 |
| Dc Current Gain Hfe Min | 120hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 300V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2845319/)

## MSB92ASWT1G, MSB92AS1WT1G 

## PNP Silicon General Purpose High Voltage Transistor 

**www.onsemi.com** COLLECTOR 3 1 ~~=~~ 2 BASE EMITTER 3 1 2 

This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. 

## **Features** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**MAXIMUM RATINGS** (TA = 25 ° C) 

|**MAXIMUM RATINGS**(TA = 25A = 25= 25°C)|**MAXIMUM RATINGS**(TA = 25A = 25= 25°C)|BASE<br>EMITTER|BASE<br>EMITTER|EMITTER||||
|---|---|---|---|---|---|---|---|
|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Collector-Base Voltage<br>V(BR)CBO<br>−300<br>Vdc<br>Collector-Emitter Voltage<br>V(BR)CEO<br>−300<br>Vdc<br>Emitter-Base Voltage<br>V(BR)EBO<br>−5.0<br>Vdc<br>Collector Current − Continuous<br>IC<br>500<br>mAdc<br>ESD Rating:<br>Human Body Model<br>Machine Model<br>ESD<br>Class 1C<br>Class C<br>−<br>**THERMAL CHARACTERISTICS**<br>~~=~~||**SC−70 (SOT−323)**<br>**CASE 419**<br>**STYLE 3**<br>**MARKING DIAGRAM**<br>3<br>1<br>2||||||
|**Rating**<br>**Symbol**<br>**Max**<br>**Unit**<br>Power Dissipation (Note 1)<br>PD<br>150<br>mW<br>Junction Temperature<br>TJ<br>150<br>°C<br>Storage Temperature Range<br>Tstg<br>−55 to +150<br>°C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>D3 M<br>1<br>D5 M<br>1<br>MSB92ASWT1G<br>MSB92AS1WT1G<br>~~=r~~||||||||
|device. If any of these limits are exceeded, device functionality should not be||Dx<br>= Device Code||||||
|assumed, damage may occur and reliability may be affected.<br>1. Device mounted on a FR-4 glass epoxy printed circuit board using the<br>minimum recommended footprint.||M<br>= Date Code*<br>= Pb−Free Package||||||



1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 

(Note: Microdot may be in either location) 

*Date Code orientation may vary depending upon manufacturing location. 

**ORDERING INFORMATION Device Package Shipping**[†] MSB92ASWT1G SC−70 3000/Tape & Reel (Pb−Free) MSB92AS1WT1G SC−70 3000/Tape & Reel (Pb−Free) ~~=~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **MSB92ASWT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2010 **June, 2017 − Rev. 6** 

**MSB92ASWT1G, MSB92AS1WT1G** 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Collector-Emitter Breakdown Voltage<br>(IC= −1.0 mAdc, IB= 0)|V(BR)CEO|−300|−|Vdc|
|Collector-Base Breakdown Voltage<br>(IC= −100�Adc, IE= 0)|V(BR)CBO|−300|−|Vdc|
|Emitter-Base Breakdown Voltage<br>(IE= −100�Adc, IE= 0)|V(BR)EBO|−5.0|−|Vdc|
|Collector-Base Cutoff Current<br>(VCB= 300 Vdc, IE= 0)|ICBO|−|−0.25|�A|
|Emitter−Base Cutoff Current<br>(VEB= −3.0 Vdc, IB= 0)|IEBO|−|−0.1|�A|
|DC Current Gain (Note 2)<br>(VCE= −10 Vdc, IC= −1.0 mAdc)<br>(VCE= −10 Vdc, IC= −10 mAdc)<br>(VCE= −10 Vdc, IC= −30 mAdc)|hFE1<br>hFE2<br>hFE3|120<br>40<br>25|200<br>−<br>−|−|
|Collector-Emitter Saturation Voltage (Note 2)<br>(IC= −20 mAdc, IB= −2.0 mAdc)|VCE(sat)|−|−0.5|Vdc|
|Base−Emitter Saturation Voltage<br>(IC= −20 mAdc, IB= −2.0 mAdc)|VBE(sat)|−|−0.9|Vdc|
|**SMALL SIGNAL CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mAdc, VCE= −20 Vdc, f = 20 MHz)|fT|50|−|MHz|
|Collector−Base Capacitance<br>(VCB= −20 Vdc, IE= 0, f = 1.0 MHz)|Ccb|−|6.0|pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 � s, D.C. ≤ 2%. 

**www.onsemi.com** 

**2** 

**MSB92ASWT1G, MSB92AS1WT1G** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [492 x 593] intentionally omitted <==**

**----- Start of picture text -----**<br>
400 0.7<br>VCE = 5 V IC/IB = 10<br>0.6<br>150 ° C 150 ° C<br>300<br>0.5<br>0.4<br>200<br>25 ° C 0.3<br>25 ° C<br>0.2<br>100<br>−55 ° C 0.1<br>−55 ° C<br>0 0<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 1. DC Current Gain Figure 2. VCE(sat) Curve<br>1.0 1.2<br>IC/IB = 10 −55 ° C 1.1 VCE = 5 V<br>0.9<br>1.0<br>0.8 −55 ° C<br>0.9<br>25 ° C<br>0.7<br>0.8<br>0.6 0.7<br>150 ° C 0.6 25 ° C<br>0.5<br>0.5<br>0.4<br>0.4 150 ° C<br>0.3<br>0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 3. VBE(sat) Curve Figure 4. VBE(on) Curve<br>1000 2.0<br>VCE = 20 V TA = 25 ° C<br>TA = 25 ° C<br>1.6<br>100<br>IC = 50 mA<br>1.2<br>IC = 10 mA<br>0.8<br>10<br>0.4<br>0.1 mA 1.0 mA<br>1 0<br>0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)<br>VOLTAGE (V)<br>, DC CURRENT GAIN<br>FE , COLL−EMITT SATURATION<br>h CE(sat)<br>V<br>VOLTAGE (V)<br>, BASE−EMITT SATURATION<br>, BASE−EMITTER VOLTAGE (V)<br>BE(sat)<br>V BE(on)<br>V<br>PRODUCT<br>, CURRENT−GAIN BANDWIDTH<br>fT<br>, COLLECTOR−EMITTER VOLTAGE (V)<br>CE<br>V<br>**----- End of picture text -----**<br>


**Figure 5. Current−Gain Bandwidth Product** 

**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

**www.onsemi.com** 

**3** 

**MSB92ASWT1G, MSB92AS1WT1G** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 1000<br>TA = 25 ° C 100  � s<br>10  � s<br>1  � s<br>Cib<br>100<br>1 ms<br>10<br>10 ms<br>Cob 10 100 ms<br>1 s<br>1 1<br>0.1 1 10 100 0.1 1 10 100 1000<br>VR, REVERSE VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V)<br>Figure 7. Capacitance Figure 8. Safe Operating Area<br>C, CAPACITANCE (pF)<br>, COLLECTOR CURRENT (mA)<br>IC<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

**4** 

**MSB92ASWT1G, MSB92AS1WT1G** 

## **PACKAGE DIMENSIONS** 

**SC−70 (SOT−323)** CASE 419−04 ISSUE N 

**==> picture [461 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>e1 2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.032 0.035 0.040<br>HE E A1 0.00 0.05 0.10 0.000 0.002 0.004<br>1 2 A2 0.70 REF 0.028 REF<br>b 0.30 0.35 0.40 0.012 0.014 0.016<br>c 0.10 0.18 0.25 0.004 0.007 0.010<br>i anma )l == D 1.80 2.10 —=-— 2.20 0.071 = 0.083 =— 0.087<br>b E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>e e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>H E 2.00 2.10 2.40 0.079 0.083 0.095<br>A A2 c STYLE 3:<br>PIN 1. BASE<br>2. EMITTER<br>0.05 (0.002) L 3. COLLECTOR<br>A1<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

**==> picture [171 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.65<br>0.65 0.025<br>0.025<br>1.9<br>ea.<br>0.075<br>0.9<br>0.035<br>0.7<br>LE<br>0.028<br>SCALE 10:1 mm<br>ate — inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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**5** 



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