# Bipolar (BJT) Single Transistor, PNP, 50 V, 100 mA, 200 mW, SC-59, Surface Mount ![Product image](https://novapart.co/image/farnell:2724361/) **URL**: https://novapart.co/products/MSA1162GT1G/bipolar-bjt-single-transistor-pnp-50-v-100-ma-200 **SKU**: MSA1162GT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0220 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:80MHz; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 200mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | PNP | | Transition Frequency | 80MHz | | Transistor Case Style | SC-59 | | Dc Current Gain Hfe Min | 200hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 100mA | | Collector Emitter Voltage Max | 50V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2724361/) MSA1162GT1G ## General Purpose Amplifier Transistors ## **PNP Surface Mount** ## **Features** - Moisture Sensitivity Level: 1 - This is a Pb−Free Device **MAXIMUM RATINGS** (TA = 25 ° C) |**MAXIMUM RATINGS**(TA = 25A = 25= 25°C)|**MAXIMUM RATINGS**(TA = 25A = 25= 25°C)|**MAXIMUM RATINGS**(TA = 25A = 25= 25°C)|**MAXIMUM RATINGS**(TA = 25A = 25= 25°C)|**MAXIMUM RATINGS**(TA = 25A = 25= 25°C)| |---|---|---|---|---| |**Rating**
**Symbol**
**Value**
**Unit**
Collector−Base Voltage
V(BR)CBO
60
Vdc
Collector−Emitter Voltage
V(BR)CEO
50
Vdc
Emitter−Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current − Continuous
IC
100
mAdc
Collector Current − Peak
IC(P)
200
mAdc
**THERMAL CHARACTERISTICS**
~~=====~~||||| ||**Characteristic**|**Symbol**|**Max**|**Unit**| ||Power Dissipation|PD|200|mW| ||Junction Temperature|TJ|150|°C| ||Storage Temperature|Tstg|−55 to +150|°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) **Characteristic Symbol Min Max Unit** Collector−Emitter Breakdown Voltage V(BR)CEO 50 − Vdc (IC = 2.0 mAdc, IB = 0) ~~ee ee~~ Collector−Base Breakdown Voltage V(BR)CBO 60 − Vdc (IC = 10 Adc, IE = 0) ~~i~~ Emitter−Base Breakdown Voltage V(BR)EBO 7.0 − Vdc (IE = 10 Adc, IC = 0) ~~eeeee eee~~ Collector−Base Cutoff Current ICBO − 0.1 Adc (VCB = 45 Vdc, IE = 0) Collector−Emitter Cutoff Current ICEO (VCE = 10 Vdc, IB = 0) − 0.1 Adc (VCE = 30 Vdc, IB = 0) − 2.0 Adc (VCE = 30 Vdc, IB = 0, TA = 80 ° C) − 1.0 mAdc DC Current Gain (Note 1) hFE − (VCE = 6.0 Vdc, IC = 2.0 mAdc) 200 400 ~~TE~~ Collector−Emitter Saturation Voltage VCE(sat) − 0.5 Vdc (IC = 100 mAdc, IB = 10 mAdc) Current−Gain − Bandwidth Product fT MHz (IC = 1 mA, VCE = 10.0 V, f = 10 MHz) 80 − 1. ~~es~~ Pulse Test: Pulse Width ≤ 300 s, D.C. ≤ 2%. ~~ee~~ ## **http://onsemi.com** **==> picture [103 x 86] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
3
1 2
BASE EMITTER
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SC−59
CASE 318D
STYLE 1
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## **MARKING DIAGRAM** 62G M 1 62G = Device Code M = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. **ORDERING INFORMATION Device Package Shipping**[†] MSA1162GT1G SC−59 3000/Tape & Reel (Pb−Free) ~~—~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **1** Publication Order Number: © Semiconductor Components Industries, LLC, 2013 **October, 2013 − Rev. 7** **MSA1162GT1/D** **MSA1162GT1G** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [490 x 410] intentionally omitted <==** **----- Start of picture text -----**
−200 1000
−2.0 mA −1.5 mA
−160 −1.0 mA TA = 100 ° C
−120 25 ° C −25 ° C
−0.5 mA
100
−80
IB = −0.2 mA
−40
TA = 25 ° C VCE = −1.0 V
0 10
0 −1 −2 −3 −4 −5 −6 −1 −10 −100 −1000
VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
Figure 1. Collector Saturation Region Figure 2. DC Current Gain
1000 −1
IC/IB = 10
TA = 100 ° C
TA = 100 ° C
25 ° C −25 ° C 25 ° C −25 ° C
100 −0.1
VCE = −6.0 V
10 −0.01
−1 −10 −100 −1000 −1 −10 −100 −1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain Figure 4. VCE(sat) versus IC
, DC CURRENT GAIN
FE
h
, COLLECTOR CURRENT (mA)
IC
, DC CURRENT GAIN
FE
h
, MAXIMUM COLLECTOR VOLTAGE (V)
CE(sat)
V
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−10 −10,000
COMMON EMITTER 25 ° C
VCE = 6 V TA = 100 ° C
−1000
−25 ° C
−100
−1
−10
TA = 25 ° C −1
IC/IB = 10
−0.1 −0.1
−1 −10 −100 −1000 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1
IC, COLLECTOR CURRENT (mA) VBE, BASE−EMITTER VOLTAGE (V)
A)
�
VOLTAGE (V)
, BASE CURRENT (
IB
BASE−EMITTER SATURATION
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**Figure 5. VBE(sat) versus IC** **Figure 6. Base−Emitter Voltage** **http://onsemi.com** **2** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [275 x 39] intentionally omitted <==** **----- Start of picture text -----**
SC−59
CASE 318D−04
ISSUE H
DATE 28 JUN 2012
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SCALE 2:1
ros D
3
HE 1 2 E
b
e
C
A
L
A1
SOLDERING FOOTPRINT*
0.95
a 0.95 0.037
0.037
2.4
ae
0.094
1.0
0.039
0.8 SCALE 10:1 mm
0.031 - A inches
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*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **==> picture [193 x 107] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
— MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 1.00 1.15 1.30 0.039 0.045 0.051
A1 0.01 0.06 0.10 0.001 0.002 0.004
b 0.35 0.43 0.50 0.014 0.017 0.020
c 0.09 0.14 0.18 0.003 0.005 0.007
D 2.70 2.90 3.10 0.106 0.114 0.122
E 1.30 1.50 1.70 0.051 0.059 0.067
e 1.70 1.90 2.10 0.067 0.075 0.083
L 0.20 0.40 0.60 0.008 0.016 0.024
H E 2.50 2.80 3.00 0.099 0.110 0.118
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GENERIC
MARKING DIAGRAM
XXX M
1 =
XXX = Specific Device Code
M = Date Code
= Pb−Free Package*
(*Note: Microdot may be in either location)
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*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. **==> picture [201 x 72] intentionally omitted <==** **----- Start of picture text -----**
STYLE 1: STYLE 2: STYLE 3:
PIN 1. BASE PIN 1. ANODE PIN 1. ANODE
2. EMITTER 2. N.C. 2. ANODE
3. COLLECTOR 3. CATHODE 3. CATHODE
STYLE 4: STYLE 5: STYLE 6:
PIN 1. CATHODE PIN 1. CATHODE PIN 1. ANODE
2. N.C. 2. CATHODE 2. CATHODE
3. ANODE 3. ANODE 3. ANODE/CATHODE
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Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42664B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SC−59 PAGE 1 OF 1** ~~aes~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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