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MRFX035HR5
RF FET Transistor, 179 V, 154 W, 1.8 MHz, 512 MHz, NI-360H
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:179V; Continuous Drain Current Id:-; Power Dissipation Pd:154W; Operating Frequency Min:1.8MHz; Operating Frequency Max:512MHz; RF Transistor Case:NI-360H;
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 2Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: 154W
- Transistor Mounting: Flange
- Transistor Case Style: NI-360H
- Operating Frequency Max: 512MHz
- Operating Frequency Min: 1.8MHz
- Drain Source Voltage Vds: 179V
- Operating Temperature Max: 225°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 79.29 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **NXP Semiconductors** Document Number: MRFX035H Technical Data Rev. 0, 12/2018 ~~BO~~ **RF Power LDMOS Transistor MRFX035H** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from 1.8 to 512 MHz. **1.8–512 MHz, 35 W CW, 65 V WIDEBAND** **RF POWER LDMOS TRANSISTOR** **==> picture [501 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> Typical Performance: VDD = 65 Vdc<br>Frequency Pout Gps D<br>(MHz) Signal Type (W) (dB) (%)<br>1.8–54 [(1,2)] CW 32 CW 24.1 58.1<br>30–400 [(2)] CW 26 CW 15.1 42.3<br>230 [(3)] CW 35 CW 24.8 75.8<br>Load Mismatch/Ruggedness<br>Frequency Pin Test<br>(MHz) Signal Type VSWR (dBm) Voltage Result<br>NI--360H--2SB<br>230 [(3)] CW > 65:1 23.5 65 No Device<br>at all Phase (3 dB Degradation<br>S Angles Overdrive) S<br>1. Measured in 1.8–54 MHz broadband reference circuit (page 5).<br>2. The values shown are the minimum measured performance numbers across the<br>indicated frequency range.<br>**----- End of picture text -----**<br> 3. Measured in 230 MHz production test fixture (page 10). **==> picture [148 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> Gate 2 1 Drain<br>(Top View)<br>Note: The backside of the package is the<br>source terminal for the transistor.<br>Figure 1. Pin Connections<br>**----- End of picture text -----**<br> ## **Features** - Unmatched input and output allowing wide frequency range utilization - 50 ohm native output impedance - Qualified up to a maximum of 65 VDD operation - Characterized from 30 to 65 V for extended power range - High breakdown voltage for enhanced reliability - Suitable for linear application with appropriate biasing - Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation - Included in NXP product longevity program with assured supply for a minimum of 15 years after launch ## **Typical Applications** - Industrial, scientific, medical (ISM) - Laser generation - Plasma generation - Particle accelerators - MRI, RF ablation and skin treatment - Industrial heating, welding and drying systems - Radio and VHF TV broadcast - Aerospace - HF communications - Radar - Mobile radio - HF and VHF communications - PMR base stations 2018 NXP B.V. **MRFX035H** RF Device Data ~~Ne~~ NXP Semiconductors **MRFX035H** 1 **Table 1. Maximum Ratings** |**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**||||| |---|---|---|---|---|---| |**Rating**||**Symbol**|**Value**||**Unit**| |Drain--Source Voltage||VDSS|–0.5, +179||Vdc| |Gate--Source Voltage||VGS|–6.0, +10||Vdc| |Storage Temperature Range||Tstg|–65 to +150||C| |Case Operating Temperature Range||TC|–40 to +150||C| |Operating Junction Temperature Range **(1,2)**||TJ|–40 to +225||C| |Total Device Dissipation @ TC= 25C<br>Derate above 25C||PD|154<br>0.769||W<br>W/C| |**Table 2. Thermal Characteristics**|||||| |**Characteristic**||**Symbol**|**Value (2,3)**||**Unit**| |Thermal Resistance, Junction to Case<br>CW: Case Temperature 74.2C, 35 W CW, 65 Vdc, IDQ= 15 mA, 230 MHz||RJC|1.3||C/W| |**Table 3. ESD Protection Characteristics**|||||| |**Test Methodology**|||**Class**||| |Human Body Model (per JS--001--2017)|||2, passes 2500 V||| |Charge Device Model (per JS--002--2014)|||C3, passes 1200 V||| |**Table 4. Electrical Characteristics** (TA= 25C unless otherwise noted)|||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**Off Characteristics**|||||| |Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)|IGSS|—|—|400|nAdc| |Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 250Adc)|V(BR)DSS|179|193|—|Vdc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 65 Vdc, VGS= 0 Vdc)|IDSS|—|—|10|Adc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 179 Vdc, VGS= 0 Vdc)|IDSS|—|—|300|Adc| |**On Characteristics**|||||| |Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 640Adc)|VGS(th)|1.7|2.75|3.0|Vdc| |Gate Quiescent Voltage<br>(VDD= 65 Vdc, ID= 15 mAdc, Measured in Functional Test)|VGS(Q)|2.5|3.0|3.5|Vdc| |Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 100 mAdc)|VDS(on)|—|0.17|—|Vdc| |**Dynamic Characteristics**|||||| |Reverse Transfer Capacitance<br>(VDS= 65 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|Crss|—|0.13|—|pF| |Output Capacitance<br>(VDS= 65 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|Coss|—|13.7|—|pF| |Input Capacitance<br>(VDS= 65 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)|Ciss|—|42.8|—|pF| 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.nxp.com/RF and search for AN1955. (continued) **MRFX035H** RF Device Data NXP Semiconductors 2 **Table 4. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)** |**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Symbol**|**Min**|**Min**|**Typ**|**Max**|**Max**|**Unit**| |---|---|---|---|---|---|---|---|---|---|---|---| |**Functional Tests**(In NXP Production Test Fixture, 50 ohm system) VDD=|||||65 Vdc, IDQ|= 15 mA, Pout= 35 W CW, f = 230 MHz|||||| |Power Gain|||||Gps|23.5||24.8||26.5|dB| |Drain Efficiency|||||D|72.0||75.8||—|%| |Input Return Loss|||||IRL||—|–16||–11|dB| |**Load Mismatch/Ruggedness**(In NXP Production Test Fixture, 50 ohm system) IDQ= 15 mA|||||||||||| |**Frequency**<br>**(MHz)**|**Signal**<br>**Type**||**VSWR**|**Pin**<br>**(dBm)**|||**Test Voltage, VDD**|||**Result**|| |230|CW||> 65:1<br>at all Phase Angles|23.5<br>(3 dB Overdrive)||||65||No Device<br>Degradation|| |**Table 5. Ordering Information**|||||||||||| |**Device**|||**Tape and Reel Information**|||||**Package**|||| |MRFX035HR5||R5 Suffix|= 50 Units, 32 mm Tape Width, 13--inch Reel|||||NI--360H--2SB|||| **MRFX035H** RF Device Data NXP Semiconductors 3 ## **TYPICAL CHARACTERISTICS** **==> picture [241 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc<br>100<br>Ciss<br>Coss<br>10<br>1<br>Crss<br>0.1<br>0 10 20 30 40 50 60 70<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 2. Capacitance versus Drain--Source Voltage** **==> picture [239 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 1.06<br>100 mA VDD = 65 Vdc<br>1.04 I DQ = 15 mA<br>1.02<br>300 mA<br>200 mA<br>1<br>500 mA<br>0.98<br>0.96<br>0.94<br>–50 –25 0 25 50 75 100<br>TC, CASE TEMPERATURE (C)<br>IDQ (mA) Slope (mV/ C)<br>15 –2.88<br>100 –2.32<br>200 –2.16<br>300 –1.76<br>500 –1.36<br>GS(Q)<br>NORMALIZED V<br>**----- End of picture text -----**<br> **Figure 3. Normalized VGS versus Quiescent Current and Case Temperature** **==> picture [239 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [9]<br>VDD = 65 Vdc<br>ID = 0.56 Amps<br>10 [8]<br>ID = 0.73 Amps<br>10 [7]<br>10 [6] ID = 0.89 Amps<br>10 [5]<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (C)<br>Note: MTTF value represents the total cumulative operating time<br>under indicated test conditions.<br>MTTF calculator available at http://www.nxp.com/RF/calculators.<br>MTTF (HOURS)<br>**----- End of picture text -----**<br> **Figure 4. MTTF versus Junction Temperature — CW** **MRFX035H** RF Device Data NXP Semiconductors 4 **1.8–54 MHz BROADBAND REFERENCE CIRCUIT — 2.0** **3.0** **(5.1 cm** **7.6 cm)** **Table 6. 1.8–54 MHz HF Broadband Performance** (In NXP Reference Circuit, 50 ohm system) VDD = 65 Vdc, IDQ = 25 mA, Pin = 22 dBm, CW |**Frequency**<br>**(MHz)**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**| |---|---|---|---| |1.8|39|24.9|65.7| |7.2|42|25.2|69.3| |14.2|43|25.3|70.3| |54|32|24.1|58.1| **MRFX035H** RF Device Data NXP Semiconductors 5 ## **1.8–54 MHz BROADBAND REFERENCE CIRCUIT — 2.0** **3.0** **(5.1 cm** **7.6 cm)** |**Figure 5. MRFX035H Broadband Reference Circuit Component Layout — 1.8–54 MHz**<br>Q1<br>C1<br>C2<br>C3<br>C4<br>C5<br>R2<br>D115353<br>Rev. 0<br>R1<br>C9<br>L1, E1<br>C11<br>C8<br>C7<br>C6<br>C10<br>_aaa--031941_<br>**Table 7. MRFX035H Broadband Reference Circuit Component Designations and Values — 1.8–54 MHz**|**Figure 5. MRFX035H Broadband Reference Circuit Component Layout — 1.8–54 MHz**<br>Q1<br>C1<br>C2<br>C3<br>C4<br>C5<br>R2<br>D115353<br>Rev. 0<br>R1<br>C9<br>L1, E1<br>C11<br>C8<br>C7<br>C6<br>C10<br>_aaa--031941_<br>**Table 7. MRFX035H Broadband Reference Circuit Component Designations and Values — 1.8–54 MHz**|**Figure 5. MRFX035H Broadband Reference Circuit Component Layout — 1.8–54 MHz**<br>Q1<br>C1<br>C2<br>C3<br>C4<br>C5<br>R2<br>D115353<br>Rev. 0<br>R1<br>C9<br>L1, E1<br>C11<br>C8<br>C7<br>C6<br>C10<br>_aaa--031941_<br>**Table 7. MRFX035H Broadband Reference Circuit Component Designations and Values — 1.8–54 MHz**|**Figure 5. MRFX035H Broadband Reference Circuit Component Layout — 1.8–54 MHz**<br>Q1<br>C1<br>C2<br>C3<br>C4<br>C5<br>R2<br>D115353<br>Rev. 0<br>R1<br>C9<br>L1, E1<br>C11<br>C8<br>C7<br>C6<br>C10<br>_aaa--031941_<br>**Table 7. MRFX035H Broadband Reference Circuit Component Designations and Values — 1.8–54 MHz**| |---|---|---|---| |**Part**|**Description**|**Part Number**|**Manufacturer**| |C1, C5, C6, C9, C11|22 nF Chip Capacitor|C3216NP02A223J160AA|TDK| |C2|10F, 35 V Tantalum Capacitor|T491D106K035AT|Kemet| |C3|0.1F Chip Capacitor|C1206C104K1RACTU|Kemet| |C4|2.2F Chip Capacitor|C3225X7R1H225K|TDK| |C7|0.1F Chip Capacitor|C3216C0G2A104J160AE|TDK| |C8|2.2F Chip Capacitor|G2225X7R225KT3AB|ATC| |C10|220F, 100 V Electrolytic Capacitor|MCGPR100V227M16X26|Multicomp| |E1|61 Ferrite Toroid|5961001101|Fair-Rite| |L1|26 Turns, 23 AWG, Toroid Transformer with Ferrite E1|MW0454 Copper Magnet Wire|Temco| |Q1|RF Power LDMOS Transistor|MRFX035H|NXP| |R1|1 k, 3 W Axial Leaded Resistor|CPF31K0000FKE14|Vishay| |R2|330, 1 W Chip Resistor|RMCF2512JT330R|Stackpole<br>Electronics| |PCB|FR4 0.30,r= 4.8, 1 oz. Copper|D115353|MTL| **MRFX035H** RF Device Data NXP Semiconductors 6 ## **TYPICAL CHARACTERISTICS — 1.8–54 MHz BROADBAND REFERENCE CIRCUIT** **==> picture [273 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 29 75<br>28 70<br>27 D 65<br>26 Gps 60<br>25 55<br>24 50<br>23 45<br>22 Pout 40<br>21 35<br>VDD = 65 Vdc, Pin = 22 dBm, lDQ = 25 mA, CW<br>20 30<br>0 10 20 30 40 50 60<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br> **Figure 6. Power Gain, Drain Efficiency and CW Output Power versus Frequency at a Constant Input Power** **==> picture [485 x 255] intentionally omitted <==** **----- Start of picture text -----**<br> 60 60<br>VDD = 65 Vdc, Pin = 22 dBm, CW f = 14.2 MHz VDD = 65 Vdc, IDQ = 25 mA, CW f = 14.2 MHz<br>50 50 7.2 MHz<br>7.2 MHz<br>40 1.8 MHz 40 1.8 MHz<br>54 MHz 54 MHz<br>30 30<br>20 20<br>10 10<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 10 15 20 25 30<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (dBm)<br>Figure 7. CW Output Power versus Gate--Source f P1dB P3dB<br>Voltage at a Constant Input Power (MHz) (W) (W)<br>1.8 36.4 44.6<br>7.2 43.7 51.3<br>14.2 44.5 52.4<br>54 38.7 47.7<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>out out<br>P P<br>**----- End of picture text -----**<br> **Figure 8. CW Output Power versus Input Power** **==> picture [262 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 28 90<br>VDD = 65 Vdc, IDQ = 25 mA, CW f = 14.2 MHz<br>27 80<br>1.8 MHz<br>26 Gps 70<br>54 MHz<br>25 7.2 MHz 60<br>f = 14.2 MHz<br>24 50<br>7.2 MHz<br>23 40<br>D<br>22 30<br>54 MHz<br>21 20<br>1.8 MHz<br>20 10<br>0 10 20 30 40 50 60<br>Pout, OUTPUT POWER (WATTS)<br>Figure 9. Power Gain and Drain Efficiency versus<br>CW Output Power and Frequency<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>**----- End of picture text -----**<br> **MRFX035H** RF Device Data NXP Semiconductors 7 ## **TYPICAL CHARACTERISTICS — 1.8–54 MHz BROADBAND REFERENCE CIRCUIT — TWO--TONE[(1)]** **==> picture [236 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> –20<br>–30 3rd Order<br>–40 5th Order<br>–50 7th Order<br>–60 VDD = 65 Vdc, IDQ = 60 mA<br>f1 = 1.799 MHz, f2 = 1.801 MHz<br>Two--Tone Measurements<br>–70<br>0 10 20 30 40 50<br>Pout, OUTPUT POWER (WATTS) PEP<br>IMD, INTERMODULATION DISTORTION (dBc)<br>**----- End of picture text -----**<br> **Figure 10. Intermodulation Distortion Products versus Output Power — 1.8 MHz** **==> picture [235 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> –20<br>–30 3rd Order<br>–40 5th Order<br>–50 7th Order<br>–60 VDD = 65 Vdc, IDQ = 60 mA<br>f1 = 14.199 MHz, f2 = 14.201 MHz<br>Two--Tone Measurements<br>–70<br>0 10 20 30 40 50<br>Pout, OUTPUT POWER (WATTS) PEP<br>IMD, INTERMODULATION DISTORTION (dBc)<br>**----- End of picture text -----**<br> **Figure 12. Intermodulation Distortion Products versus Output Power — 14.2 MHz** **==> picture [233 x 407] intentionally omitted <==** **----- Start of picture text -----**<br> –20<br>3rd Order<br>–30<br>–40 5th Order<br>–50 7th Order<br>–60 VDD = 65 Vdc, IDQ = 60 mA<br>f1 = 7.199 MHz, f2 = 7.201 MHz<br>Two--Tone Measurements<br>–70<br>0 10 20 30 40 50<br>Pout, OUTPUT POWER (WATTS) PEP<br>Figure 11. Intermodulation Distortion<br>Products versus Output Power — 7.2 MHz<br>–20<br>3rd Order<br>–30<br>5th Order<br>–40<br>7th Order<br>–50<br>–60 VDD = 65 Vdc, IDQ = 60 mA<br>f1 = 53.999 MHz, f2 = 54.001 MHz<br>Two--Tone Measurements<br>–70<br>0 10 20 30 40 50<br>Pout, OUTPUT POWER (WATTS) PEP<br>IMD, INTERMODULATION DISTORTION (dBc)<br>IMD, INTERMODULATION DISTORTION (dBc)<br>**----- End of picture text -----**<br> **Figure 13. Intermodulation Distortion Products versus Output Power — 54 MHz** 1. The distortion products are referenced to one of the two tones and the peak envelope power (PEP) is 6 dB above the power in a single tone. **MRFX035H** RF Device Data NXP Semiconductors 8 ## **1.8–54 MHz BROADBAND REFERENCE CIRCUIT** **==> picture [308 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz <br>1.8 42.6 – j2.98 48.8 + j0.18<br>7.2 42.5 – j1.78 48.5 – j1.37<br>14.2 42.4 – j2.46 48.3 – j2.80<br>54 41.3 – j8.14 46.5 – j10.59<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 14. Broadband Series Equivalent Source and Load Impedance — 1.8–54 MHz** **MRFX035H** RF Device Data NXP Semiconductors 9 ## **230 MHz PRODUCTION TEST FIXTURE — 3.0** **5.0** **(7.6 cm** **12.7 cm)** **==> picture [379 x 229] intentionally omitted <==** **----- Start of picture text -----**<br> C11<br>C2 C7 C9<br>C4 D105952<br>C3 C8 B2<br>B1<br>L3<br>C10<br>C12<br>C5<br>L2 L4<br>C1 C6<br>C13<br>C15<br>L5<br>L1 C14<br>cut<br>out<br>area<br>MRFX035H<br>Rev. 0<br>aaa--031940<br>**----- End of picture text -----**<br> **Figure 15. MRFX035H Production Test Fixture Component Layout — 230 MHz** **Table 8. MRFX035H Production Test Fixture Component Designations and Values — 230 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |B1, B2|Long RF Bead|2743021447|Fair-Rite| |C1|15 pF Chip Capacitor|ATC100B150JT500XT|ATC| |C2|22F, 35 V Tantalum Capacitor|T491X226K035AT|Kemet| |C3|2.2F Chip Capacitor|C3225X7R1H225K250AB|TDK| |C4|0.1F Chip Capacitor|CDR33BX104AKWS|AVX| |C5, C10, C12, C15|1000 pF Chip Capacitor|ATC100B102JT50XT|ATC| |C6|5.1 pF Chip Capacitor|ATC100B5R1CT500XT|ATC| |C7|0.1F Chip Capacitor|C1206C104K1RACTU|Kemet| |C8|1F Chip Capacitor|C3225JB2A105K200AA|TDK| |C9|15F Chip Capacitor|C5750X7S2A156M230KB|TDK| |C11|470F, 100 V Electrolytic Capacitor|MCGPR100V477M16X32|Multicomp| |C13, C14|5.6 pF Chip Capacitor|ATC100B5R6C500XT|ATC| |L1|5.0 nH, 2 Turn Inductor|A02TJLC|Coilcraft| |L2|8.0 nH, 3 Turn Inductor|A03TJLC|Coilcraft| |L3|120 nH Inductor|1812SMS-R12JLC|Coilcraft| |L4|100 nH Inductor|1812SMS-R10JLC|Coilcraft| |L5|28 nH, 8 Turn Inductor|B08TJLC|Coilcraft| |PCB|Rogers AD255C, 0.030,r= 2.55, 1 oz. Copper|D105952|MTL| **MRFX035H** RF Device Data NXP Semiconductors 10 ## **TYPICAL CHARACTERISTICS — 230 MHz, TC = 25** _ **C PRODUCTION TEST FIXTURE** **==> picture [519 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>VDD = 65 Vdc, f = 230 MHz, CW<br>35<br>30<br>Pin = 0.11 W<br>25<br>20<br>15<br>Pin = 0.06 W<br>10<br>5<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>Figure 16. Output Power versus Gate--Source<br>Voltage at a Constant Input Power<br>48 30 90<br>46 VDD = 65 Vdc, IDQ = 15 mA, f = 230 MHz, CW 28 VDDI = 65 Vdc, f = 230 MHz, CWDQ = 150 mA Gps 80<br>44 26 100 mA 70<br>42 50 mA<br>24 60<br>40 D<br>22 50<br>38 15 mA<br>20 40<br>36<br>150 mA<br>18 30<br>34<br>100 mA<br>32 16 20<br>50 mA<br>15 mA<br>30 14 10<br>28 12 0<br>6 9 12 15 18 21 24 27 1 10 100<br>Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS)<br>f P1dB P3dB Figure 18. Power Gain and Drain Efficiency<br>(MHz) (W) (W) versus Output Power and Quiescent Current<br>230 37 43<br>, OUTPUT POWER (WATTS)<br>out<br>P<br>, POWER GAIN (dB)<br>, OUTPUT POWER (dBm)Pout Gps DRAIN EFFICIENCY (%)D,<br>**----- End of picture text -----**<br> **Figure 17. Output Power versus Input Power** **==> picture [499 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 30 90 28<br>VDD = 65 Vdc, IDQ = 15 mA, f = 230 MHz, CW –40 _ C IDQ = 15 mA, f = 230 MHz, CW<br>28 25 _ C 80 26<br>26 G ps 85 _ C 70 24<br>24 T C = –40 _ C 60 22<br>22 25 _ C 50 20<br>65 V<br>20 40 18 60 V<br>85 _ C 55 V<br>18 30 16 50 V<br>D 40 V<br>16 20 14<br>14 10 12 V DD = 30 V<br>12 0 10<br>0.1 1 10 100 0 5 10 15 20 25 30 35 40 45 50<br>Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS)<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>Gps DRAIN EFFICIENCY (%)D, Gps<br><br>**----- End of picture text -----**<br> **Figure 19. Power Gain and Drain Efficiency versus Output Power** **Figure 20. Power Gain versus Output Power and Drain--Source Voltage** **MRFX035H** RF Device Data NXP Semiconductors 11 ## **230 MHz PRODUCTION TEST FIXTURE** **==> picture [308 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz <br>230 3.1 + j27.0 16.2 + j39.5<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 21. Series Equivalent Source and Load Impedance — 230 MHz** **MRFX035H** RF Device Data NXP Semiconductors 12 ## **PACKAGE DIMENSIONS** **MRFX035H** RF Device Data NXP Semiconductors 13 **MRFX035H** RF Device Data NXP Semiconductors 14 ## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** Refer to the following resources to aid your design process. ## **Application Notes** - AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages - AN1955: Thermal Measurement Methodology of RF Power Amplifiers ## **Engineering Bulletins** - EB212: Using Data Sheet Impedances for RF LDMOS Devices ## **Software** - Electromigration MTTF Calculator - RF High Power Model - .s2p File ## **Development Tools** - Printed Circuit Boards ## **To Download Resources Specific to a Given Part Number:** 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu ## **REVISION HISTORY** The following table summarizes revisions to this document. |**Revision**|**Date**|**Description**| |---|---|---| |0|Dec. 2018|<br>Initial release of data sheet| **MRFX035H** RF Device Data NXP Semiconductors 15 **==> picture [506 x 36] intentionally omitted <==** ## _**How to Reach Us:**_ **Home Page:** nxp.com **Web Support:** nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2018 NXP B.V. ## **MRFX035H** **==> picture [112 x 37] intentionally omitted <==** RF Device Data NXP Semiconductors Document Number: MRFX035H 16Rev. 0, 12/2018
Updated at April 10, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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