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MRFE6VP5600HR5
RF FET Transistor, 130 VDC, 1.667 kW, 1.8 MHz, 600 MHz, NI-1230
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:130VDC; Continuous Drain Current Id:-; Power Dissipation Pd:1.667kW; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; RF Transistor Case:NI-1230; N
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: 1.667kW
- Transistor Mounting: Flange
- Transistor Case Style: NI-1230
- Operating Frequency Max: 600MHz
- Operating Frequency Min: 1.8MHz
- Drain Source Voltage Vds: 130VDC
- Operating Temperature Max: 225°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 71.98 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Freescale Semiconductor**
Document Number: MRFE6VP5600H Rev. 1, 1/2011
Technical Data
## **RF Power Field Effect Transistors** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
- Typical Performance: VDD = 50 Volts, IDQ = 100 mA
|**Signal Type**|**Pout**<br>**(W)**|**f**<br>**(MHz)**|**Gps**<br>**(dB)**|η**D**<br>**(%)**|**IRL**<br>**(dB)**|
|---|---|---|---|---|---|
|Pulsed (100μsec,<br>20% Duty Cycle)|600 Peak|230|25.0|74.6|--18|
|CW|600 Avg.|230|24.6|75.2|--17|
## **MRFE6VP5600HR6 MRFE6VP5600HSR6**
## **1.8--600 MHz, 600 W CW, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs**
- Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
- 600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
## **Features**
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
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CASE 375D--05, STYLE 1<br>NI--1230<br>MRFE6VP5600HR6<br>**----- End of picture text -----**<br>
- Device can be used Single--Ended or in a Push--Pull Configuration
- Qualified Up to a Maximum of 50 VDD Operation
- Characterized from 30 V to 50 V for Extended Power Range
- Suitable for Linear Application with Appropriate Biasing
- Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- RoHS Compliant
- In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12.
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CASE 375E--04, STYLE 1<br>NI--1230S<br>MRFE6VP5600HSR6<br>**----- End of picture text -----**<br>
## **PARTS ARE PUSH--PULL**
**Table 1. Maximum Ratings**
|**Table 1. Maximum Ratings**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Drain--Source Voltage|VDSS|--0.5, +130|Vdc|
|Gate--Source Voltage|VGS|--6.0, +10|Vdc|
|Storage Temperature Range|Tstg|-- 65 to +150|°C|
|Case Operating Temperature|TC|150|°C|
|Total Device Dissipation @ TC= 25°C<br>Derate above 25°C|PD|1667<br>8.33|W<br>W/°C|
|Operating Junction Temperature **(1,2)**|TJ|225|°C|
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RFin/VGS 3 1 RFout/VDS<br>RFin/VGS 4 2 RFout/VDS<br>(Top View)<br>**----- End of picture text -----**<br>
**Figure 1. Pin Connections**
**Table 2. Thermal Characteristics**
|**Table 2. Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Symbol**<br>**Value (2,3)**<br>**Unit**|**Unit**|
|Thermal Resistance, Junction to Case<br>Case Temperature 68°C, 600 W Pulsed, 100μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz<br>Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz|ZθJC<br>RθJC|JC<br>JC<br>0.022<br>0.12<br>°C/W|C/W|
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
**MRFE6VP5600HR6 MRFE6VP5600HSR6**
RF Device Data Freescale Semiconductor
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## **Table 3. ESD Protection Characteristics**
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|||
|---|---|
|Test Methodology|Class|
|Human Body Model (per JESD22--A114)|2 (Minimum)|
|Machine Model (per EIA/JESD22--A115)|B (Minimum)|
|Charge Device Model (per JESD22--C101)|IV (Minimum)|
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**Table 4. Electrical Characteristics** (TA = 25°C unless otherwise noted)
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||||||||
|---|---|---|---|---|---|---|
|Characteristic|Symbol|Min|Typ|Max|Unit|
|Off Characteristics|[(1)]|
|Gate--Source Leakage Current|IGSS|—|—|1|μAdc|
|(VGS = 5 Vdc, VDS = 0 Vdc)|
|Drain--Source Breakdown Voltage|V(BR)DSS|130|—|—|Vdc|
|(VGS = 0 Vdc, ID = 100 mA)|
|Zero Gate Voltage Drain Leakage Current|IDSS|—|—|10|μAdc|
|(VDS = 50 Vdc, VGS = 0 Vdc)|
|Zero Gate Voltage Drain Leakage Current|IDSS|—|—|20|μAdc|
|(VDS = 100 Vdc, VGS = 0 Vdc)|
|SSeeeeeee|
|On Characteristics|
|Gate Threshold Voltage|[(1)]|VGS(th)|1.7|2.2|2.7|Vdc|
|(VDS = 10 Vdc, ID = 960 μAdc)|
|Gate Quiescent Voltage|VGS(Q)|2.0|2.5|3.0|Vdc|
|(VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test)|
|Drain--Source On--Voltage|[(1)]|VDS(on)|—|0.26|—|Vdc|
|(VGS = 10 Vdc, ID = 2 Adc)|
|EEE|
|Dynamic Characteristics|[(1)]|
|Reverse Transfer Capacitance|Crss|—|1.60|—|pF|
|(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)|
|Output Capacitance|Coss|—|129|—|pF|
|(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)|
|Input Capacitance|Ciss|—|342|—|pF|
|(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)|
|FEE|
|Functional Tests|(In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 600 W Peak (120 W Avg.), f = 230 MHz,|
|Pulsed, 100 μsec Pulse Width, 20% Duty Cycle|
|Power Gain|Gps|23.5|25.0|26.5|dB|
|Drain Efficiency|ηD|73.5|74.6|—|%|
|Input Return Loss|IRL|—|--18|--12|dB|
|——|
|1.|Each side of device measured separately.|
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**MRFE6VP5600HR6 MRFE6VP5600HSR6**
RF Device Data Freescale Semiconductor
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VBIAS +<br>Iiltl C10 C11 C12 C13<br>COAX1 R1<br>Z11<br>Z3 Z5 Z7 Z9 L1 Z13<br>RF<br>INPUT Z1 Z2 C2<br>C4 C5<br>CH E<br>Z4 Z6 Z8 Z10 L2 Z14<br>C1<br>C3<br>Z12<br>COAX2 R2<br>VBIAS +<br>C6 C7 C8 C9<br>**----- End of picture text -----**<br>
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+ + + VSUPPLY<br>L3 C22 C23 C24 C25<br>5 5 5<br>7 Z19<br>Z17 COAX3<br>Z15 Z21 Z23 Z25 C16 Z27 Z29<br>THO<br>C17<br>! Po RF<br>OUTPUT<br>Z31 Z32<br>DUT C14 C15 C20 , [ot++ + H)<br>po C21<br>it .<br>Z16 Z22 Z24 Z26 Z28 Z30 .<br>TH<br>C18<br>Z18<br>COAX4<br>Z20 C19<br>L4<br>+ + + VSUPPLY<br>C26 C27 C28 C29<br>if il<br>Z1 0.192″ x 0.082″ Microstrip Z11*, Z12* 0.872″ x 0.058″ Microstrip Z23, Z24 1.251″ x 0.300″ Microstrip<br>Z2 0.175″ x 0.082″ Microstrip Z13, Z14 0.412″ x 0.726″ Microstrip Z25, Z26 0.127″ x 0.300″ Microstrip<br>Z3, Z4 0.170″ x 0.100″ Microstrip Z15, Z16 0.371″ x 0.507″ Microstrip Z27, Z28 0.058″ x 0.300″ Microstrip<br>Z5, Z6 0.116″ x 0.285″ Microstrip Z17*, Z18* 0.466″ x 0.363″ Microstrip Z29, Z30 0.058″ x 0.300″ Microstrip<br>Z7, Z8 0.116″ x 0.285″ Microstrip Z19*, Z20* 1.187″ x 0.154″ Microstrip Z31 0.186″ x 0.082″ Microstrip<br>Z9, Z10 0.108″ x 0.285″ Microstrip Z21, Z22 0.104″ x 0.507″ Microstrip Z32 0.179″ x 0.082″ Microstrip<br>* Line length includes microstrip bends<br>**----- End of picture text -----**<br>
**Figure 1. MRFE6VP5600HR6(HSR6) Test Circuit Schematic -- Pulsed**
**MRFE6VP5600HR6 MRFE6VP5600HSR6**
RF Device Data Freescale Semiconductor
3
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**Figure 2. MRFE6VP5600HR6(HSR6) Test Circuit Component Layout -- Pulsed**
**Table 5. MRFE6VP5600HR6(HSR6) Test Circuit Component Designations and Values -- Pulsed**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1|12 pF Chip Capacitor|ATC100B120JT500XT|ATC|
|C2, C3|27 pF Chip Capacitors|ATC100B270JT500XT|ATC|
|C4|0.8--8.0 pF Variable Capacitor, Gigatrim|27291SL|Johanson|
|C5|33 pF Chip Capacitor|ATC100B330JT500XT|ATC|
|C6, C10|22μF, 35 V Tantalum Capacitors|T491X226K035AT|Kemet|
|C7, C11|0.1μF Chip Capacitors|CDR33BX104AKYS|AVX|
|C8, C12|220 nF Chip Capacitors|C1812C224K5RACTU|Kemet|
|C9, C13, C22, C26|1000 pF Chip Capacitors|ATC100B102JT50XT|ATC|
|C14|36 pF Chip Capacitor|ATC100B360JT500XT|ATC|
|C15|51 pF Chip Capacitor|ATC100B510GT500XT|ATC|
|C16, C17, C18, C19|240 pF Chip Capacitors|ATC100B241JT200XT|ATC|
|C20|39 pF Chip Capacitor|ATC100B390JT500XT|ATC|
|C21|10 pF Chip Capacitor|ATC100B100JT500XT|ATC|
|C23, C24, C25, C27, C28, C29|470μF, 63 V Electrolytic Capacitors|MCGPR63V477M13X26--RH|Multicomp|
|Coax1, 2, 3, 4|25ΩSemi Rigid Coax, 2.2″Long|UT--141C--25|Micro Coax|
|L1, L2|5 nH Inductors|A02TKLC|Coilcraft|
|L3, L4|6.6 nH Inductors|GA3093--ALC|Coilcraft|
|R1, R2|10ΩChip Resistors|CRCW120610R0JNEA|Vishay|
|PCB|0.030″,εr= 2.55|AD255A|Arlon|
**MRFE6VP5600HR6 MRFE6VP5600HSR6**
RF Device Data Freescale Semiconductor
4
## **TYPICAL CHARACTERISTICS**
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1000 64<br>VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz<br>Ciss 63 Pulse Width = 100 μsec, 20% Duty Cycle<br>62<br>100 Coss P3dB = 58.3 dBm (679 W)<br>Ideal<br>61<br>P2dB = 58.2 dBm (664 W)<br>Measured with ±30 mV(rms)ac @ 1 MHz<br>VGS = 0 Vdc 60<br>P1dB = 58.0 dBm<br>10 R HSSS Fet e<br>59 (632 W)<br>Actual<br>BSS Crss 58 Fo<br>1 57<br>e s eee e<br>0 10 20 30 40 50 31 32 33 34 35 36 37<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (dBm) PULSED<br>Note: Each side of device measured separately. Figure 4. Pulsed Output Power versus<br>Input Power<br>Figure 3. Capacitance versus Drain--Source Voltage<br>27 90 27<br>26 VPulse Width = 100DD = 50 Vdc, IDQ μ = 100 mA, f = 230 MHzsec, 20% Duty Cycle 80 26 VPulse Width = 100DD = 50 Vdc, IDQ μ = 100 mA, f = 230 MHzsec, 20% Duty Cycle<br>25<br>25 70<br>Poe e e 24 Fe<br>24 Gps 60 23<br>iy Oe TY N 22 AIN A<br>23 iLWY |\YON 50 21 Ai) AY 50 V<br>45 V<br>22 pel ae 40 20 T T<br>40 V<br>ηD 19<br>21 30 35 V<br>Tie | 18 ———<br>VDD = 30 V<br>20 eet EE LEI 20 17 Se<br>40 100 1000 0 100 200 300 400 500 600 700<br>Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED<br>Figure 5. Pulsed Power Gain and Drain Efficiency Figure 6. Pulsed Power Gain versus<br>versus Output Power Output Power<br>90 27 90<br>80 VDD = 30 V 35 V 40 V 45 V 50 V 26 VPulse Width = 100DD = 50 Vdc, IDQ μ = 100 mA, f = 230 MHzsec, 20% Duty Cycle 25 _ C 80<br>85 _ C<br>70 e e 25 fe e --30 _ C 70<br>Gps<br>60 K ALE AET 24 TC = --30 _ C ZaL Z or\ an 60<br>50 23 25 _ C 50<br>MLA a te NV<br>40 22 40<br>MW | Y or<br>ηD<br>30 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz 21 85 _ C 30<br>20 YooJF | Pulse Width = 100 μsec, 20% Duty Cycle 20 (s rdettT|TTTMI 20<br>0 100 200 300 400 500 600 700 40 100 1000<br>Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED<br>Figure 7. Pulsed Drain Efficiency versus Figure 8. Pulsed Power Gain and Drain Efficiency<br>Output Power versus Output Power<br>C, CAPACITANCE (pF)<br>, OUTPUT POWER (dBm) PULSED<br>out<br>P<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%) ps<br>G D, G<br>η<br>, POWER GAIN (dB)<br> DRAIN EFFICIENCY (%)ηD, Gps DRAIN EFFICIENCY (%)ηD,<br>**----- End of picture text -----**<br>
**MRFE6VP5600HR6 MRFE6VP5600HSR6**
RF Device Data Freescale Semiconductor
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## **TYPICAL CHARACTERISTICS**
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10 [9]<br>SS SS SS SS SS<br>-—-—a ee + + — — — — —F —¢ — —¢ —} —¢ —— +<br>10 [8]<br>_aa SS SS ee<br>aeea a, a a ee ee<br>10 [7] SS<br>==<br>a ee ee, ee ee ee<br>10 [6] a<br>SSSS<br>aeeee ee ee ee<br>10 [5] a<br>==<br>aeeee ee<br>10 [4] eeee<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (°C)<br>This above graph displays calculated MTTF in hours when the device<br>is operated at VDD = 50 Vdc, Pout = 600 W Avg., and ηD = 75.2%.<br>MTTF calculator available at http://www.freescale.com/rf. Select<br>Software & Tools/Development Tools/Calculators to access MTTF<br>calculators by product.<br>MTTF (HOURS)<br>**----- End of picture text -----**<br>
**Figure 9. MTTF versus Junction Temperature — CW**
**MRFE6VP5600HR6 MRFE6VP5600HSR6**
RF Device Data Freescale Semiconductor
6
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Zsource<br>Kor Zo = 10 Ω<br>LY f = 230 MHz Veo LIT Prop<br>ZA og OS<br>RIESOs SRS SoO WsS‘|CESanna<br>FLOR f = 230 MHz<br>Zload<br>REO QO SSS eneens<br>SLe/pTU PROPERER BRBLN SORESeaten Srcetera<br>Yj eLYé CERES e BS ORR eeSET<br>| BLS eyB E R ROIS ES<br>ae eee een<br>/eh fyBP é EEEE LEI LPREETI TAPES CORE EK<br>fé e e mee LER REE<br>{EEB eee<br>[ A2) meeeeeee<br>fe Feieee a ae SEE Le AE<br> Sosezerocrittiariet geaeeuatated!ie aunceenae rie<br>ruteepeeeateery een ees<br>cement} EEE<br>[oS] Lor CACCoEREE EA rity ry Pit pe ES<br>ee<br>teHtErie 1 pee ri ener ae rH | VO _\ ee eg SEK<br>VDD = 50 Vdc, IDQ = 100 mA, Pout = 600 W Peak<br>f Zsource Zload<br>MHz Ω Ω<br>230 1.78 + j5.45 2.75 + j5.30<br>Zsource = Test circuit impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured from<br>drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>Network Test Network<br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 10. Series Equivalent Source and Load Impedance**
**MRFE6VP5600HR6 MRFE6VP5600HSR6**
RF Device Data Freescale Semiconductor
7
## **PACKAGE DIMENSIONS**
**MRFE6VP5600HR6 MRFE6VP5600HSR6**
RF Device Data Freescale Semiconductor
8
**MRFE6VP5600HR6 MRFE6VP5600HSR6**
RF Device Data Freescale Semiconductor
9
**MRFE6VP5600HR6 MRFE6VP5600HSR6**
RF Device Data Freescale Semiconductor
10
**MRFE6VP5600HR6 MRFE6VP5600HSR6**
RF Device Data Freescale Semiconductor
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## **PRODUCT DOCUMENTATION AND SOFTWARE**
Refer to the following documents and software to aid your design process.
## **Application Notes**
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
## **Engineering Bulletins**
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
## **Software**
- Electromigration MTTF Calculator
- RF High Power Model
- .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
## **R5 TAPE AND REEL OPTION**
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRFE6VP5600H and MRFE6VP5600HS parts will be available for 2 years after release of MRFE6VP5600H and MRFE6VP5600HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRFE6VP5600H and MRFE6VP5600HS in the R6 tape and reel option.
## **REVISION HISTORY**
The following table summarizes revisions to this document.
|**Revision**|**Date**|**Description**|
|---|---|---|
|0|Dec. 2010|•<br>Initial Release of Data Sheet|
|1|Jan. 2011|•<br>Fig. 1, Pin Connections, corrected pin 4 label from RFout/VGSto RFin/VGS, p. 1|
**MRFE6VP5600HR6 MRFE6VP5600HSR6**
RF Device Data Freescale Semiconductor
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RF Device DataDocument Number: MRFE6VP5600H Freescale SemiconductorRev. 1, 1/2011
13
Updated at April 10, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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