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MRFE6S9060NR1
RF FET Transistor, 66 VDC, 470 MHz, 960 MHz, TO-270
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:66VDC; Continuous Drain Current Id:-; Power Dissipation Pd:-; Operating Frequency Min:470MHz; Operating Frequency Max:960MHz; RF Transistor Case:TO-270; No. of Pins
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 2Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: -
- Transistor Mounting: Flange
- Transistor Case Style: TO-270
- Operating Frequency Max: 960MHz
- Operating Frequency Min: 470MHz
- Drain Source Voltage Vds: 66VDC
- Operating Temperature Max: 225°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 55.86 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Document Number: MRFE6S9060N Rev. 1, 10/2007 **Freescale Semiconductor** Technical Data ## **RF Power Field Effect Transistor** ## N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. - Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 21.1 dB Drain Efficiency — 33% ## **MRFE6S9060NR1** **880 MHz, 14 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET** - ACPR @ 750 kHz Offset — -45.7 dBc in 30 kHz Channel Bandwidth - • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness ## **GSM EDGE Application** - Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (920-960 MHz) - Power Gain — 20 dB Drain Efficiency — 46% Spectral Regrowth @ 400 kHz Offset = -62 dBc Spectral Regrowth @ 600 kHz Offset = -78 dBc EVM — 1.5% rms **==> picture [94 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> CASE 1265-09, STYLE 1<br>TO-270-2<br>PLASTIC<br>**----- End of picture text -----**<br> ## **GSM Application** - Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (920-960 MHz) Power Gain — 20 dB Drain Efficiency — 63% ## **Features** - Characterized with Series Equivalent Large-Signal Impedance Parameters - Integrated ESD Protection - 225 ° C Capable Plastic Package - RoHS Compliant - In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. ## **Table 1. Maximum Ratings** |**Table 1. Maximum Ratings**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|VDSS|- 0.5, +66|Vdc| |Gate-Source Voltage|VGS|- 0.5, +12|Vdc| |Maximum Operation Voltage|VDD|32, +0|Vdc| |Storage Temperature Range|Tstg|- 65 to +150|°C| |Case Operating Temperature|TC|150|°C| |Operating Junction Temperature **(1,2)**|TJ|225|°C| |**Table 2. Thermal Characteristics**|||| |**Characteristic**|**Symbol**|**Value(2,3)**|**Unit**| |Thermal Resistance, Junction to Case|RθJC||°C/W| |Case Temperature 80°C, 60 W CW||0.77|| |Case Temperature 78°C, 14 W CW||0.88|| ## **Table 2. Thermal Characteristics** 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. ~~lH freescale”~~ **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 1 **Table 3. ESD Protection Characteristics Test Methodology Class** Human Body Model (per JESD22-A114) 2 (Minimum) Machine Model (per EIA/JESD22-A115) B (Minimum) Charge Device Model (per JESD22-C101) III (Minimum) **Table 4. Moisture Sensitivity Level** ~~_S=—~~ **Test Methodology Rating Package Peak Temperature Unit** Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 ° C **Table 5. Electrical Characteristics** (TC = 25 ° C unless otherwise noted) **Characteristic Symbol Min Typ Max Unit Off Characteristics** Zero Gate Voltage Drain Leakage Current IDSS — — 10 μ Adc (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current IDSS — — 1 μ Adc (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current IGSS — — 10 μ Adc (VGS = 5 Vdc, VDS = 0 Vdc) ~~EE~~ **On Characteristics** Gate Threshold Voltage VGS(th) 1 2.2 3 Vdc (VDS = 10 Vdc, ID = 200 μ A) Gate Quiescent Voltage VGS(Q) 2 3 4 Vdc (VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test) Drain-Source On-Voltage VDS(on) 0.05 0.27 0.4 Vdc (VGS = 10 Vdc, ID = 1.5 Adc) ~~EE~~ **Dynamic Characteristics** Reverse Transfer Capacitance Crss — 1.1 — pF (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance Coss — 33 — pF (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance Ciss — 109 — pF (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) **Functional Tests** (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ± 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF ~~=== ===~~ Power Gain Gps 20 21.1 23 dB Drain Efficiency η D 30.5 33 — % Adjacent Channel Power Ratio ACPR — -45.7 -44 dBc Input Return Loss IRL — -18 -9 dB ~~EE~~ (continued) **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 2 **Table 5. Electrical Characteristics** (TC = 25 ° C unless otherwise noted) **(continued)** **Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances** (In Freescale GSM EDGE Test Fixture Optimized for 920-960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., f = 920-960 MHz, GSM EDGE Signal Power Gain Gps — 20 — dB Drain Efficiency η D — 46 — % Error Vector Magnitude EVM — 1.5 — % Spectral Regrowth at 400 kHz Offset SR1 — -62 — dBc Spectral Regrowth at 600 kHz Offset SR2 — -78 — dBc ~~=e~~ **Typical CW Performances** (In Freescale GSM Test Fixture Optimized for 920-960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 60 W, f = 920-960 MHz Power Gain Gps — 20 — dB Drain Efficiency η D — 63 — % Input Return Loss IRL — -12 — dB Pout @ 1 dB Compression Point P1dB — 67 — W (f = 940 MHz) ~~se~~ **Typical Performances** (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, 865-900 MHz Bandwidth Video Bandwidth @ 60 W PEP Pout where IM3 = -30 dBc VBW MHz (Tone Spacing from 100 kHz to VBW) — 3 — Δ IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 35 MHz Bandwidth @ Pout = 14 W Avg. GF — 0.27 — dB Gain Variation over Temperature Δ G — 0.011 — dB/ ° C (-30 ° C to +85 ° C) Output Power Variation over Temperature Δ P1dB — 0.088 — dBm/ ° C (-30 ° C to +85 ° C) ~~EEE~~ **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 3 **==> picture [497 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> B1 B2 R4 VSUPPLY<br>R1 + + +<br>VBIAS<br>C15 C16 C17 C19 C18<br>+ + R3<br>C9 C7 R2 C8 L1 e l C11 L2 LITIT TI RF<br>RF rl | R Z10 Z11 Z12 Z13 Z14 Z15 OUTPUT<br>INPUT C6<br>Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9<br>C14<br>C13<br>C10 C12<br>C1<br>DUT<br>C2 C3 C4 C5<br>Z1 0.215 ″ x 0.065 ″ Microstrip Z9 0.057 ″ x 0.525 ″ Microstrip<br>Z2 0.221 ″ x 0.065 ″ Microstrip Z10 0.360 ″ x 0.270 ″ Microstrip<br>Z3 0.500 ″ x 0.100 ″ Microstrip Z11 0.063 ″ x 0.270 ″ Microstrip<br>Z4 0.460 ″ x 0.270 ″ Microstrip Z12 0.360 ″ x 0.065 ″ Microstrip<br>Z5 0.040 ″ x 0.270 ″ Microstrip Z13 0.170 ″ x 0.065 ″ Microstrip<br>Z6 0.280 ″ x 0.270 ″ x 0.530 ″ Taper Z14 0.880 ″ x 0.065 ″ Microstrip<br>Z7 0.087 ″ x 0.525 ″ Microstrip Z15 0.260 ″ x 0.065 ″ Microstrip<br>Z8 0.435 ″ x 0.525 ″ Microstrip PCB Taconic RF-35 0.030 ″ , ε r = 3.5<br>**----- End of picture text -----**<br> **Figure 1. MRFE6S9060NR1 Test Circuit Schematic** **Table 6. MRFE6S9060NR1 Test Circuit Component Designations and Values** **Part Description Part Number Manufacturer** B1 Ferrite Bead 2743019447 Fair Rite ~~ff~~ B2 Ferrite Bead 274021447 Fair Rite ~~es rs~~ C1, C8, C14, C15 47 pF Chip Capacitors ATC100B470JT500XT ATC ~~ff~~ C2, C4, C13 0.8-8.0 pF Variable Capacitors, Gigatrim 2729152 Johanson C3 3.0 pF Chip Capacitor ATC100B3R0JT500XT ATC ~~a~~ C5, C6 15 pF Chip Capacitors ATC100B150JT500XT ATC C7, C16, C17 10 μ F, 35 V Tantalum Capacitors T491D106K035AT Kemet C9 100 μ F, 50 V Electrolytic Capacitor MCHT101M1HB-1017-RH Multicomp ~~Ce~~ C10, C11 12 pF Chip Capacitors ATC100B120JT500XT ATC C12 4.3 pF Chip Capacitor ATC100B4R3JT500XT ATC ~~Ce a~~ C18 0.56 μ F Chip Capacitor ATC700A561MT150XT ATC ~~i~~ C19 470 μ F, 63 V Electrolytic Capacitor EKME630ELL471MK255 Multicomp L1, L2 12.5 nH Inductor A04T-5 Coilcraft R1 1 k Ω , 1/4 W Chip Resistor CRCW12061001FKEA Vishay ~~_~~ R2 560 k Ω , 1/4 W Chip Resistor CRCW12065600FKEA Vishay R3 12 Ω , 1/4 W Chip Resistor CRCW120612R0FKEA Vishay ~~_——————————~~ R4 27 1/4 W Chip Resistor CRCW120627R0FKEA Vishay **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 4 **==> picture [463 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> C7 R2<br>8Q58 oood VGG DaniSeI R1 Jo000020rq” L_]® lore) B1R3 os 00000000000000000000083e ® ® G°88 B2C19 " UYsZ C16 C17 s=y VDD O0000000000000Li R4 ®596a)<br>° im 5 ® De | 5<br>5 C8 ° 6 | 5<br>®Oo000 i7900000 C9 ere asOo 0000 ° C15 a u 6L 000 C18 moooo0<br>|! 000000® ——|af=leoos8eg,LOooco00g 60005000088 5_0 L2 858<br>C6<br>0000000000000000 L1 ee I) 000000000000000000000<br>C11<br>C1 C2 C10 C12<br>—HO000000000000000 =a C3 il C5 | ————r= 000 GSD IJO0 000000000000L000000<br>C13 C14<br>seoosood_| Ym |p 000008800 |<br>e) |laYoYoresll= YoretetoXeKere)00060 e<br>C4<br>| %<br>© © +se freescale| ™<br>@) ® semiconductor<br>TO−270/272<br>Surface /<br>Bolt down<br>CUT OUT AREA<br>**----- End of picture text -----**<br> **Figure 2. MRFE6S9060NR1 Test Circuit Component Layout** **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 5 ## **TYPICAL CHARACTERISTICS** **==> picture [500 x 631] intentionally omitted <==** **----- Start of picture text -----**<br> 21 40<br>η D<br>20 | | 30<br>Gps<br>19 20<br>Poy VDD = 28 Vdc, Pout = 14 W (Avg.) tN<br>18 IDQ = 450 mA, N−CDMA IS−95 −30 0<br>Pilot, Sync, Paging, Traffic Codes 8<br>IRL<br>Through 13<br>17 −40 −5<br>—~ i<br>Cc ACPR SS<br>16 Pee −50 −10<br>15 | ALT1 NJf= −60 −15<br>14 e e −70 −20<br>=<br>820 840 860 880 900 920 940 960 980<br>f, FREQUENCY (MHz)<br>Figure 3. Single-Carrier N-CDMA Broadband Performance<br>@ Pout = 14 Watts Avg.<br>20 60<br>η D<br>19 SSR 50<br>Gps<br>18 A TNLE 40<br>VDD = 28 Vdc, Pout = 28 W (Avg.)<br>17 IDQ = 450 mA, N−CDMA IS−95 −20 0<br>IRL Pilot, Sync, Paging, Traffic Codes 8<br>16 <<= Through 13 ES −30 −5<br>ACPR<br>15 ee ao −40 −10<br>14 −50 −15<br>CTR Vie<br>ALT1<br>13 a ee −60 −20<br>820 840 860 880 900 920 940 960 980<br>f, FREQUENCY (MHz)<br>Figure 4. Single-Carrier N-CDMA Broadband Performance<br>@ Pout = 28 Watts Avg.<br>21 −10<br>IDQ = 675 mA VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz<br>550 mA Two−Tone Measurements<br>20 −20<br>are 8e | [NYY]<br>450 mA<br>19 350 mA −30<br>IDQ = 225 mA<br>e 225 mA T \ a<br>18 −40<br>eT TUN | 350 mA err 675 mA a<br>17 e e −50 e 450 mA ll<br>VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz<br>550 mA<br>Two−Tone Measurements<br>16 EY −60 B ERR<br>1 10 100 200 1 10 100 200<br>Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP<br>Figure 5. Two-Tone Power Gain versus Figure 6. Third Order Intermodulation Distortion<br>Output Power versus Output Power<br>, DRAIN<br>D<br>η<br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc), ALT1 (dBc)<br>IRL, INPUT RETURN LOSS (dB)<br>, DRAIN<br>D<br>η<br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc), ALT1 (dBc)<br>IRL, INPUT RETURN LOSS (dB)<br>, POWER GAIN (dB)<br>ps IMD, THIRD ORDER<br>G<br>INTERMODULATION DISTORTION (dBc)<br>**----- End of picture text -----**<br> **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 6 ## **TYPICAL CHARACTERISTICS** **==> picture [499 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> −10 0<br>VDD = 28 Vdc, IDQ = 450 mA VDD = 28 Vdc, Pout = 60 W (PEP)<br>−20 f1 = 880 MHz, f2 = 880.1 MHz −10 IDQ = 450 mA, Two−Tone Measurements<br>Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz<br>−30 −20<br>Bn a Zam<br>−40 −30<br>IM3−U<br>pk [T T ees<br>−50 CE ey −40 IM3−L sear IM5−U TN<br>3rd Order Er. ae 40F 2 — -~ +o 4<br>IM5−L<br>−60 −50<br>IM7−U<br>a 5th Order e e e<br>−70 −60 IM7−L<br>Te e CI See T_T<br>7th Order<br>−80 2 A) −70 O I<br>1 10 100 200 0.1 1 10 80<br>Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz)<br>Figure 7. Intermodulation Distortion Products Figure 8. Intermodulation Distortion Products<br>versus Output Power versus Tone Spacing<br>IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc)<br>**----- End of picture text -----**<br> **==> picture [234 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 58<br>Ideal<br>57 P6dB = 51.31 dBm (135.21 W)<br>56 | SS |] | fett<br>55 P3dB = 50.39 dBm (109.4 W)<br>54 Ro pe“7,E<br>53 P| | | N fat | NIVE| |<br>P1dB = 49.41 dBm<br>52<br>(87.3 W)<br>51 a Actual<br>5049 ||Lae| ‘NALZDh VPulsed CW, 12 DD = 28 Vdc, I e DQμsec(on) = 450 mA<br>48 ar| | ft 1% Duty Cycle, f = 880 MHz<br>27 28 29 30 31 32 33 34 35 36 37<br>Pin, INPUT POWER (dBm)<br>, OUTPUT POWER (dBm)<br>out<br>P<br>**----- End of picture text -----**<br> **Figure 9. Pulsed CW Output Power versus Input Power** **==> picture [270 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 65 −15<br>60 VDD = 28 Vdc, IDQ = 450 mA TC = −30 C −20<br>aa<br>f = 880 MHz, N−CDMA IS−95<br>55 25 C −25<br>Pilot, Sync, Paging, Traffic Codes<br>50 8 Through 13 85 C −30<br>4540 FT | ELT ed ff] −30 C ||| −35−40<br>25 C<br>35 a ee ee Ae −45<br>30 ACPR −30 C 85 C −50<br>25 e a e——-- Aanaan −55<br>20 −30 C −60<br>15 SS Gps CeSSS 85 Sa C −65<br>10 η D −70<br>25 C<br>5 e ALT1 e e −75<br>0 ott −80<br>1 10 100<br>Pout, OUTPUT POWER (WATTS) AVG.<br>, POWER GAIN (dB)<br>ps<br>ALT1, CHANNEL POWER (dBc)<br>, DRAIN EFFICIENCY (%), G<br>D ACPR, ADJACENT CHANNEL POWER RATIO (dBc)<br>η<br>**----- End of picture text -----**<br> **Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power** **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 7 ## **TYPICAL CHARACTERISTICS** **==> picture [501 x 456] intentionally omitted <==** **----- Start of picture text -----**<br> 22 80 22<br>21 Ty Gps TC = −30 _ C −30 C 25 C 70 21 | If = 880 MHzDQ = 450 mA<br>20 60<br>85 C<br>20<br>19 85 C 50<br>ee 25 C | NINA,<br>18 40 19<br>17 30<br>18 28 V<br>32 V<br>1615 Sanaltan η D VIDQ P DD = 450 mA= 28 Vdc etit 2010 17 EAPA SSRS<br>cil f = 880 MHz I VDD = 24 V<br>14 0 16<br>Till ti pt} | | yt<br>1 10 100 200 0 20 40 60 80 100 120 140<br>Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW<br>Figure 11. Power Gain and Drain Efficiency Figure 12. Power Gain versus Output Power<br>versus CW Output Power<br>10 [8]<br>APSR<br>10 [7]<br>SERES CeeSSRRERE E EEE<br>10 [6]<br>SESRSSRSER<<S000<br>10 [5] Pi TT EET TT [EEE] ET<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (°C)<br>This above graph displays calculated MTTF in hours when the device<br>is operated at VDD = 28 Vdc, Pout = 14 W Avg., and ηD = 32.5%.<br>MTTF calculator available at http:/www.freescale.com/rf. Select Tools<br>(Software & Tools)/Calculators to access MTTF calculators by product.<br>, POWER GAIN (dB)<br>, POWER GAIN (dB) DRAIN EFFICIENCY (%) ps<br>Gps D, G<br>η<br>MTTF (HOURS)<br>**----- End of picture text -----**<br> **Figure 13. MTTF versus Junction Temperature** **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 8 ## **N-CDMA TEST SIGNAL** **==> picture [499 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> 100 −10<br>1.2288 MHz<br>−20 Channel BW<br>101 oe—— −30−40 er r e .......... [..] [.] ..... [.][.. ] ..... [.][.] [.][.] [.] .. [.][.] .. [.] . [.] . [..][.][.][..........][. ] ...... .. [. ][.] ..... ........ [.][..] .......<br>. [..] [...] .<br>. [.] [.] .<br>0.1 Te IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8Through 13) 1.2288 MHz Channel Bandwidth e −50−60 e P −ALT1 in 30 kHzIntegrated BW .... ........... .. . P [.] .................... [.] ..... [..] .... Pap ...... ......... [. ] .. [.] .............. [.] .... ... [.] P +ALT1 in 30 kHzIntegrated BW<br>0.0010.01 Carriers. ACPR Measured in 30 kHz Bandwidth @ ±Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz ± 1.98 M Hz Offset. PAR = 9.8 dB @ PAPse −70−80 eee ....... ....... [....][. ....] ... [.] .. [..][..] ....... −ACPR in 30 kHz ....... [..] .... [.] ....... ...... [.][.] . .. [....][.] ........ +ACPR in 30 kHz ... .......... ........ [..][.. .] ........ ............ [....] .. [.] .... [.] ................... a ... [.] ... [..] ........... [. ] .. [..] .<br>0.0001 0 0.01% Probability on CCDF.2 4 6 8 Oe 10 −100−90 .... .... ... ci ............ [. ..][.. ] .. .... ... [..] . [.] . [...][.][.][..] ....................... Integrated BW Integrated BW == ... ................ ............ ............ [.][.] .....................<br>PEAK−TO−AVERAGE (dB) CEE<br>−110<br>Figure 14. Single-Carrier CCDF N-CDMA −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6<br>f, FREQUENCY (MHz)<br>(dB)<br>PROBABILITY (%)<br>**----- End of picture text -----**<br> **Figure 15. Single-Carrier N-CDMA Spectrum** **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 9 **==> picture [458 x 155] intentionally omitted <==** **----- Start of picture text -----**<br> sle/PIA f K]REIERIE Zo = 5 Ω OLR SSS AA LS<br>BR] I Lf DRA REIL LS AEE TRS<br>8 /8 bE REPROOCH PERE<br>e LY Sih] EE PERRO LLREBESN SOE EET<br>s/s ERLE TPE LORI SONS EHR<br>eqs [PREET I ROE og OTE<br>AGSe EL T LITER PRE NSE mares ace<br>wt<br>£T [o7 HGSOE TAIT Ly POLES. estan gente Cote<br>St /&} fra Pjasessersssiiis:g@ eam nee, LEARH f = 910 MHz ERR [PLR] RLRERESR [LER] ON [SE] ta<br>ife|"| SRP POTEET [AD]<br>ees] 1AH S PATA PLES |<br>f = 910 MHz<br>: Sg Zsource ERE Zload HEE ER I<br>tt PD cat fad f = 850 MHz MELEE\ EE5 pasar 2<br>(\"| a] RCH eaarea Hata a SAAR<br>rh rer HEE<br>ats FRESE SepESS f = 850 MHz eee PPP eee e e Cis eee<br>**----- End of picture text -----**<br> VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg. |**f**<br>**MHz**|**Zsource**<br>Ω|**Zload**<br>Ω| |---|---|---| |850|0.44 - j0.20|2.28 + j0.23| |865|0.44 - j0.07|2.18 + j0.33| |880|0.45 + j0.50|2.20 + j0.47| |895|0.48 + j0.18|2.15 + j0.61| |910|0.52 + j0.29|2.00 + j0.68| Zsource = Test circuit impedance as measured from gate to ground. **==> picture [188 x 125] intentionally omitted <==** **----- Start of picture text -----**<br> Zload = Test circuit impedance as measured<br>from drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 16. Series Equivalent Source and Load Impedance** **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 10 ## **PACKAGE DIMENSIONS** **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 11 **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 12 **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 13 ## **PRODUCT DOCUMENTATION** Refer to the following documents to aid your design process. ## **Application Notes** - AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages - AN1955: Thermal Measurement Methodology of RF Power Amplifiers - AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages ## **Engineering Bulletins** - EB212: Using Data Sheet Impedances for RF LDMOS Devices ## **REVISION HISTORY** The following table summarizes revisions to this document. |**Revision**|**Date**||**Description**| |---|---|---|---| |0|Oct. 2007|•|Initial Release of Data Sheet| |1|Oct. 2007|•|Added Min value to VDS(on), On Characteristics table, p. 2| **MRFE6S9060NR1** RF Device Data Freescale Semiconductor 14 ## _**How to Reach Us:**_ **Home Page:** www.freescale.com **Web Support:** http://www.freescale.com/support ## **USA/Europe or Locations Not Listed:** Freescale Semiconductor, Inc. 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Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. **MRFE6S9060NR1** ~~+" freescale”~~ RF Device DataDocument Number: MRFE6S9060N Freescale SemiconductorRev. 1, 10/2007 15
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