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MRF6VP3450HR5
RF FET Transistor, 110 V, 860 MHz, 470 MHz, NI-1230
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- Manufacturer: NXP
- Product type: RF FETs
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: MRF6VP3450H
- RF Transistor Case: NI-1230
- Transistor Mounting: Flange
- Transistor Case Style: NI-1230
- Operating Frequency Max: 470MHz
- Operating Frequency Min: 860MHz
- Drain Source Voltage Vds: 110V
- Operating Temperature Max: 150°C
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 143.62 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Freescale Semiconductor** Document Number: MRF6VP3450H Rev. 4, 4/2010 Technical Data ## **RF Power Field Effect Transistors** ## N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 50 volt analog or digital television transmitter equipment. - Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM Power Gain — 22.5 dB Drain Efficiency — 28% ACPR @ 4 MHz Offset — --62 dBc @ 4 kHz Bandwidth **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** **860 MHz, 450 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs** - Typical Broadband Two--Tone Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 450 Watts PEP, f = 470--860 MHz Power Gain — 22 dB Drain Efficiency — 44% IM3 — --29 dBc - Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz: 450 Watts CW 90 Watts Avg. (DVB--T OFDM Signal, 10 dB PAR, 7.61 MHz Channel Bandwidth) ## **Features** **CASE 375D--05, STYLE 1 NI--1230 MRF6VP3450HR6(HR5)** - Characterized with Series Equivalent Large--Signal Impedance Parameters - Internally Input Matched for Ease of Use - Qualified Up to a Maximum of 50 VDD Operation - Integrated ESD Protection - Designed for Push--Pull Operation - Greater Negative Gate--Source Voltage Range for Improved Class C Operation - RoHS Compliant - In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. **CASE 375E--04, STYLE 1 NI--1230S MRF6VP3450HSR6(HSR5)** ## **PARTS ARE PUSH--PULL** **==> picture [158 x 47] intentionally omitted <==** **----- Start of picture text -----**<br> RFinA/VGSA 3 1 RFoutA/VDSA<br>RFinB/VGSB 4 2 RFoutB/VDSB<br>**----- End of picture text -----**<br> (Top View) **Figure 1. Pin Connections** **Table 1. Maximum Ratings** |**Table 1. Maximum Ratings**|**Figure 1. Pin Connections**|**Figure 1. Pin Connections**|**Figure 1. Pin Connections**| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Drain--Source Voltage|VDSS|--0.5, +110|Vdc| |Gate--Source Voltage|VGS|--6.0, +10|Vdc| |Storage Temperature Range|Tstg|-- 65 to +150|°C| |Case Operating Temperature|TC|150|°C| |Operating Junction Temperature **(1,2)**|TJ|225|°C| 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008--2010. All rights reserved. **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 1 **Table 2. Thermal Characteristics** |**Characteristic**<br>**Symbol**<br>**Value (1,2)**<br>**Unit**<br>Thermal Resistance, Junction to Case<br>Case Temperature 80°C, 90 W CW<br>Case Temperature 44°C, 450 W CW<br>Case Temperature 62°C, 450 W Pulsed, 50μsec Pulse Width, 2.5% Duty Cycle<br>RθJC<br>ZθJC<br>0.27<br>0.25<br>0.04<br>°C/W<br>~~re~~| |---| |**Table 3. ESD Protection Characteristics**| |**Test Methodology**<br>**Class**<br>Human Body Model (per JESD22--A114)<br>1B (Minimum)<br>Machine Model (per EIA/JESD22--A115)<br>B (Minimum)<br>Charge Device Model (per JESD22--C101)<br>IV (Minimum)<br>**Table 4. Electrical Characteristics** (TA= 25°C unless otherwise noted)<br>**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>~~a~~| |**Off Characteristics (3)**| |Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>10<br>μAdc<br>Drain--Source Breakdown Voltage<br>(ID= 50 mA, VGS= 0 Vdc)<br>V(BR)DSS<br>110<br>—<br>—<br>Vdc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 50 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>10<br>μAdc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 100 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>10<br>μAdc<br>**On Characteristics**<br>Gate Threshold Voltage **(3)**<br>(VDS= 10 Vdc, ID= 320μAdc)<br>VGS(th)<br>1<br>1.6<br>2.5<br>Vdc<br>Gate Quiescent Voltage **(4)**<br>(VDD= 50 Vdc, ID= 1400 mAdc, Measured in Functional Test)<br>VGS(Q)<br>2<br>2.6<br>3.5<br>Vdc<br>Drain--Source On--Voltage **(3)**<br>(VGS= 10 Vdc, ID= 1.58 Adc)<br>VDS(on)<br>—<br>0.25<br>—<br>Vdc<br>**Dynamic Characteristics (3,5)**<br>Reverse Transfer Capacitance<br>(VDS= 50 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Crss<br>—<br>0.92<br>—<br>pF<br>Output Capacitance<br>(VDS= 50 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Coss<br>—<br>54.5<br>—<br>pF<br>Input Capacitance<br>(VDS= 50 Vdc, VGS= 0 Vdc±30 mV(rms)ac @ 1 MHz)<br>Ciss<br>—<br>373<br>—<br>pF<br>~~SSeeeeeeae~~<br>~~—— EE~~<br>~~FEE~~| |**Functional Tests (4)** (In Freescale Broadband Test Fixture, 50 ohm system) VDD= 50 Vdc, IDQ= 1400 mA, Pout= 90 W Avg., f = 860 MHz,| |DVB--T OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @±4 MHz Offset @ 4 kHz Bandwidth.| |Power Gain<br>Gps<br>21.5<br>22.5<br>24.5<br>dB<br>Drain Efficiency<br>ηD<br>26<br>28<br>—<br>%<br>Adjacent Channel Power Ratio<br>ACPR<br>—<br>--62<br>--59<br>dBc<br>Input Return Loss<br>IRL<br>—<br>--4<br>--2<br>dB<br>~~SS~~| |1. MTTF calculator available athttp://www.freescale.com/rf<br>.Select Software & Tools/Development Tools/Calculators to access| |MTTF calculators by product.| |2. Refer to AN1955,_Thermal Measurement Methodology of RF Power Amplifiers._Go tohttp://www.freescale.com/rf<br>.| |Select Documentation/Application Notes -- AN1955.| 3. Each side of device measured separately. 4. Measurement made with device in push--pull configuration. 5. Part internally input matched. (continued) **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 2 **Table 4. Electrical Characteristics** (TA = 25°C unless otherwise noted) **(continued)** |**Table 4. Electrical Characteristics** (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)°C unless otherwise noted)C unless otherwise noted)|(TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)°C unless otherwise noted)C unless otherwise noted)**(continued)**|||||| |---|---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**||**Unit**| |**Typical Pulsed Performances**(In Freescale Broadband Test Fixture, 50 ohm system) VDD= 50 Vdc, IDQ= 1200 mA, Pout= 520 W,|||||= 520 W,|| |f = 470--860 MHz, 50μsec Pulse Width, 2.5% Duty Cycle||||||| |Power Gain|Gps|—|20.5|—||dB| |Drain Efficiency|ηD|—|50|—||%| |Input Return Loss|IRL|—|--3|—||dB| |Pout@ 1 dB Compression Point, Pulsed CW|P1dB|—|520|—||W| |(f = 470--860 MHz)||||||| |**Typical Two--Tone Performances**(In Freescale Broadband Test Fixture, 50 ohm system) VDD= 50 Vdc, IDQ= 1400 mA, Pout= 450 W PEP,||||||= 450 W PEP,| |f = 470--860 MHz, 100 kHz Tone Spacing||||||| |Power Gain<br>Drain Efficiency<br>Intermodulation Distortion<br>Input Return Loss<br>~~——~~|Gps<br>ηD<br>IM3<br>IRL<br>|—<br>22<br>—<br>dB<br>—<br>44<br>—<br>%<br>—<br>--29<br>—<br>dBc<br>—<br>--2<br>—<br>dB<br>~~ee~~||||| **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 3 **==> picture [559 x 634] intentionally omitted <==** **----- Start of picture text -----**<br> B1<br>VBIAS +<br>R1 Z19<br>C24 C34 C44 C36 C38<br>R3<br>Printed Balun Input<br>Z4 Z18<br>TOP BOTTOM<br>Z2 Z6 Z8 Z10 Z12 Z14 Z16<br>RF T a: .<br>INPUT Z1 Printed C1 ° ”<br>Balun<br>C3 C4<br>Input | Z1<br>Z3 Z7 Z9 Z11 Z13 Z15 Z17<br>7 [|]<br>C2<br>Z5 Z20 || "s -<br>y ocooey es<br>|<br>I R4<br>:<br>B2<br>Z21<br>VBIAS a + R2 [!] :|| |<br>C25 C35 C45 C37 C39<br>T TITTI |<br>—— = |<br>Z25<br>io____.<br>+ VSUPPLY<br>! | C22 = C40 C28 C26<br>' Z24 I Ii?<br>l Z40<br>C13<br>Printed Balun Output<br>|| Z22 a Z28 e Z30 Z32 Z34 Z36 Z38 Z42<br>TOP BOTTOM | | C8<br>C7 RF<br>Printed OUTPUT<br>Z44<br>Balun<br>Z44 DUT C5 C6 C11 C12 Output<br>Z23 Z29 Z31 Z33 Z35 Z37 Z39 Z43 7<br>|e HH _] | | C9<br>C14<br>C Z26 I C10 Z41<br>Z27<br>+ VSUPPLY =<br>C23 C41 C29 C27<br>T Ir ?<br>Z1 0.343″ x 0.065″ Microstrip Z16, Z17 0.172″ x 0.465″ Microstrip Z32, Z33 0.108″ x 0.392″ Microstrip<br>Z2, Z3 0.039″ x 0.200″ Microstrip Z18, Z20 0.397″ x 0.059″ Microstrip Z34, Z35 0.212″ x 0.388″ Microstrip<br>Z4, Z5 1.400″ x 0.059″ Microstrip Z19, Z21 0.800″ x 0.059″ Microstrip Z36, Z37 0.103″ x 0.388″ Microstrip<br>Z6, Z7 0.059″ x 0.118″ Microstrip Z22, Z23 0.276″ x 0.465″ Microstrip Z38, Z39 0.075″ x 0.157″ Microstrip<br>Z8, Z9 0.059″ x 0.118″ Microstrip Z24, Z26 0.070″ x 0.157″ Microstrip Z40, Z41 1.412″ x 0.071″ Microstrip<br>Z10, Z11 0.150″ x 0.394″ Microstrip Z25, Z27 1.000″ x 0.157″ Microstrip Z42, Z43 0.024″ x 0.087″ Microstrip<br>Z12, Z13 0.359″ x 0.394″ Microstrip Z28, Z29 0.103″ x 0.392″ Microstrip Z44 0.550″ x 0.065″ Microstrip<br>Z14, Z15 0.308″ x 0.394″ Microstrip Z30, Z31 0.084″ x 0.392″ Microstrip PCB Taconic RF35, 0.031”, εr = 3.5<br>Z4<br>Z2 Z6<br>Z3 Z7<br>Z5<br>Z40<br>Z38 Z42<br>Z39 Z43<br>Z41<br>**----- End of picture text -----**<br> **Figure 2. MRF6VP3450HR6(HSR6) Test Circuit Schematic** **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 4 **Table 5. MRF6VP3450HR6(HSR6) Test Circuit Component Designations and Values** |**Part**<br>~~a~~|**Description**<br>|**Part Number**<br>|**Manufacturer**<br>| |---|---|---|---| |B1, B2<br>~~eG~~|Short Ferrite Beads<br>~~eG~~|2743019447<br>~~eG~~|Fair--Rite<br>~~eG~~| |C1, C2<br>~~a~~|12 pF Chip Capacitors<br>~~G~~|ATC100B120GT500XT<br>~~G~~|ATC<br>~~G~~| |C3<br>~~eG~~|6.8 pF Chip Capacitor<br>~~eG~~|ATC100B6R8BT500XT<br>~~eG~~|ATC<br>~~eG~~| |C4<br>~~a~~|10 pF Chip Capacitor<br>~~G~~|ATC100B100GT500XT<br>~~G~~|ATC<br>~~G~~| |C5, C6, C8, C9<br>~~eG~~|6.8 pF Chip Capacitors<br>~~eG~~|ATC800B6R8BT500XT<br>~~eG~~|ATC<br>~~eG~~| |C7, C10, C13, C14<br>~~eG~~|10 pF Chip Capacitors<br>~~eG~~|ATC800B100J500XT<br>~~eG~~|ATC<br>~~eG~~| |C11<br>~~eG~~<br>~~eG~~|4.7 pF Chip Capacitor<br>~~eG~~<br>~~eG~~|ATC800B4R7J500XT<br>~~eG~~<br>~~eG~~|ATC<br>~~eG~~<br>~~eG~~| |C12<br>~~eG~~<br>~~eG~~|3.9 pF Chip Capacitor<br>~~eG~~<br>~~eG~~|ATC800B3R9J500XT<br>~~eG~~<br>~~eG~~|ATC<br>~~eG~~<br>~~eG~~| |C22, C23<br>~~eG~~<br>~~a~~|330 pF Chip Capacitors<br>~~eG~~<br>~~D~~|ATC100B331GT500XT<br>~~eG~~<br>~~D~~|ATC<br>~~eG~~<br>~~D~~| |C24, C25<br>~~a ~~<br>~~a~~|22μF Electrolytic Capacitors<br> ~~D~~<br>~~D~~|UUD1V220MCL1GS<br>~~D~~<br>~~D~~|Nichicon<br>~~D~~<br>~~D~~| |C26, C27<br>~~a ~~<br>~~eG~~|220μF, 100 V Electrolytic Capacitors<br> ~~D~~<br>~~eG~~|EEVFK2A221M<br>~~D~~<br>~~eG~~|Panasonic<br>~~D~~<br>~~eG~~| |C28, C29<br>~~eG~~<br>~~a~~|10μF, 50 V Chip Capacitors<br>~~eG~~<br>~~D~~|C5750X5R1H106MT<br>~~eG~~<br>~~D~~|TDK<br>~~eG~~<br>~~D~~| |C34, C35<br>~~a ~~<br>~~fe~~|39 nF Chip Capacitors<br> ~~D~~<br>~~fe~~|ATC200B393KT50XT<br>~~D~~<br>~~fe~~|ATC<br>~~D~~<br>~~fe~~| |C36, C37<br>~~fe~~|1000 pF Chip Capacitors<br>~~fe~~|ATC100B102JT500XT<br>~~fe~~|ATC<br>~~fe~~| |C38, C39<br>~~a~~|470 pF Chip Capacitors<br>|ATC100B471JT500XT<br>|ATC<br>| |C40, C41<br>~~fe~~|2.2μF, 100 V Chip Capacitors<br>~~fe~~|HMK432BJ225KM--T<br>~~fe~~|Taiyo Yuden<br>~~fe~~| |C44, C45<br>~~fe~~|2.2μF, 50 V Chip Capacitors<br>~~fe~~|C3225X7R1H225MT<br>~~fe~~|TDK<br>~~fe~~| |R1, R2<br>~~fe~~|10Ω, 1/8 W Chip Resistors<br>~~fe~~|CRCW120610R0FKEA<br>~~fe~~<br>~~D~~|Vishay<br>~~fe~~| |R3, R4<br>~~a~~|1.5Ω, 1/8 W Chip Resistors<br>~~a~~|CRCW12061R50FKEA<br>~~a~~<br>~~D~~|Vishay<br>~~a~~| **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 5 **==> picture [496 x 521] intentionally omitted <==** **----- Start of picture text -----**<br> B1 % MRF6VP3450H C28<br>R1 Se | fe °<br>>° @ _ 4 C24 40 C36 P t reeseale")semiconductor © © © 00 0 0F 0 ® fo) — 6<br>C34<br>°9 — [PF —— I °° R3 ° ° C40 —| C26 oO 000 /|b> O0000ore)0<br>fo) 0 0 00 07S 0 0 OTR°O C44 0 0 C38 0 Ofo) So oo ° °<br>59 2° 0900000 ° ° fo) rN fo)\° eeeo 000 0 00000000006Cc<br>° ° ° 00000000 ce00000 ° ° ° °<br>7 @e C22 ro 0 @-<br>° ° C13 S) io)<br>° ° C1 fs) °<br>C7<br>[USoo im C3 — C4 = C5 —_ C6 — roit | C8 Gieo 0000<br>ayTRIOo fo) = i e e Ft C11 C12 KeI C10C9 KR(S¢Oo 0000<br>°° C2<br>° ° C14 ° °<br>2 Oe 7 > @s<br>° ° [LI 0 °<br>C23<br>SP 00000 OO Oo 4s 500000000° ° Joo00000000 } 0000000000fo) [°]<br>° imal ° 600000 Co<br>° ° C45 ° fe) °<br>; © 000 0,00 0 0 9/0 9 90 0 R4 oO C41<br>° B2 =ee C35 —eea fo)° fe) SS C27 ag 69<1] 000=0 0 C29 [0°] fe)<br>C25<br>© ® Ng Gh C37 C39 ieee @ @ eeree rs OF H I®<br>R2 e Rev. 4 oo 0 oO<br>Figure 3. MRF6VP3450HR6(HSR6) Test Circuit Component Layout — Top<br>fe) 000000 Oo Cm)<br>o.° 00000000 ° Qo 0<br>0 O oO O CO occcvce Co O<br>° ° oOo<br>° ° ° 00000 °<br>2 0000000000000° 00° C5 6 fo) 0000000 °<br>O 000000<br>° °<br>5° °0900000 fe) O° oO 09 89 9 0 00000000006<br>° 00000000 00000 2 °<br>o } o<br>> Os ° 2 Oe<br>°°<br>°° ° °<br>° ° 0 0000<br>joOo eis! [eke) fe)§<br>° ° oO 0 0 0 oO<br>°°<br>CUT OUT AREA<br>CUT OUT AREA<br>**----- End of picture text -----**<br> **Figure 3a. MRF6VP3450HR6(HSR6) Test Circuit Component Layout — Bottom** **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 6 ## **TYPICAL CHARACTERISTICS** **==> picture [233 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ = 150J = 150 = 150 _ C<br>fe I<br>TJ = 175J = 175 = 175 _ C<br>10<br>TJ = 200J = 200 = 200 _ C<br>PEI TC = 25C = 25 = 25 _ C EFASNN<br>1 T L<br>1 10 100<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)DS, DRAIN--SOURCE VOLTAGE (VOLTS), DRAIN--SOURCE VOLTAGE (VOLTS)<br>, DRAIN CURRENT (AMPS)<br>IDD<br>**----- End of picture text -----**<br> **==> picture [502 x 648] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 100<br>Ciss<br>\ Coss<br>100 TJ = 150J = 150 = 150 _ C<br>e e ee fe I<br>TJ = 175J = 175 = 175 _ C<br>10<br>Measured with ±30 mV(rms)ac @ 1 MHz<br>10 Crss VGS = 0 Vdc TJ = 200J = 200 = 200 _ C<br>———$< oh PEI TC = 25C = 25 = 25 _ C EFASNN<br>1 a 1 T L<br>0 10 20 30 40 50 1 10 100<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS)DS, DRAIN--SOURCE VOLTAGE (VOLTS), DRAIN--SOURCE VOLTAGE (VOLTS)<br>Note: Each side of device measured separately. Note: Each side of device measured separately.<br>Figure 4. Capacitance versus Drain--Source Voltage Figure 5. DC Safe Operating Area<br>24 60 67<br>23.5 VDD = 50 Vdc, IDQ = 1200 mA, f = 860 MHz 55 66 Ideal<br>23 Pulse Width = 50 μsec, Duty Cycle = 2.5% 50 65<br>64 P3dB = 57.85 dBm (610 W)<br>22.5 a 45 63 EERE P2dB = 57.65 dBm<br>22 40 62 (582 W)<br>21.5 HH AotH 35 61 —|— SeaeceneeS<br>21 Gps 30 60 P1dB = 57.15 dBm<br>59 (519 W)<br>20.5 A ee eee 25 58 PTT NERINR<br>Actual<br>20 20 57<br>19.5 pe 15 56<br>19 a ηD NS 10 55 |pt e<br>54 VDD = 50 Vdc, IDQ = 1200 mA, f = 860 MHz<br>18.5 PT 5 53 P Pulse Width = 12 a μsec, Duty Cycle = 1%<br>18 PTT CC ET 0 52 atttene<br>10 100 1000 30 31 32 33 34 35 36 37 38 39 40 41 42<br>Pout, OUTPUT POWER (WATTS) PULSED Pin, INPUT POWER (dBm)<br>Figure 6. Pulsed Power Gain and Drain Efficiency Figure 7. Pulsed CW Output Power versus<br>versus Output Power Input Power<br>24 25 70<br>VDD = 50 Vdc, IDQ = 1200 mA, f = 860 MHz 25 _ C<br>23 24 Pulse Width = 50 μsec, Duty Cycle = 2.5% --30 _ C 60<br>85 _ C<br>22<br>23 50<br>Gps<br>21<br>22 TC = --30 _ C 40<br>20 (SSS 50 V 4f| \<br>45 V 21 30<br>19 oe A<br>VDD = 40 V 25 _ C ηD<br>18 H SE 20 85 _ C A . 20<br>17 VDD = 50 Vdc, IDQ = 1200 mA, f = 860 MHz 19 a tin 10<br>Pulse Width = 50 μsec, Duty Cycle = 2.5%<br>16 po ee ee 18 e e 0<br>0 100 200 300 400 500 600 700 10 100 1000<br>Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED<br>Figure 8. Pulsed Power Gain versus Figure 9. Pulsed Power Gain and Drain Efficiency<br>Output Power versus Output Power<br>C, CAPACITANCE (pF)<br>, DRAIN CURRENT (AMPS)<br>IDD<br>, POWER GAIN (dB)<br>Gps DRAIN EFFICIENCY (%)ηD, , OUTPUT POWER (dBm)Pout<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>ps ps<br>G G DRAIN EFFICIENCY (%)D,<br>η<br>**----- End of picture text -----**<br> **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 7 ## **TYPICAL CHARACTERISTICS — TWO--TONE** **==> picture [501 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> --20 --10<br>VDD = 50 Vdc, IDQ = 1400 mA, f1 = 854 MHz VDD = 50 Vdc, Pout = 450 W (PEP), IDQ = 1400 mA<br>--30 f2 = 860 MHz, Two--Tone Measurements --20 Two--Tone Measurements<br>3rd Order<br>--40 De --30 Ga<br>3rd Order<br>--50 1A Ba --40 5th Order<br>5th Order<br>--60 --50<br>Thy e 720ee | ETT A TTA<br>--70 7th Order --60 7th Order<br>--80 Oa CIti --70 S a ia<br>5 10 100 1000 0.1 1 10 60<br>Pout, OUTPUT POWER (WATTS) PEP TWO--TONE SPACING (MHz)<br>Figure 10. Intermodulation Distortion Figure 11. Intermodulation Distortion<br>Products versus Output Power Products versus Tone Spacing<br>23 --20<br>VDD = 50 Vdc, f1 = 859.9 MHz, f2 = 860 MHz<br>22.8 Two--Tone Measurements, 100 kHz Tone Spacing<br>--25<br>22.6<br>22.4 —F- IDQ = 1400 mA F (T IDQ = 700 mA<br>--30 975 mA<br>22.2<br>22 1075 mA --35 1075 mA<br>1250 mA<br>21.8 975 mA<br>21.6 eSS e --40 | 1250 mA _ 1400 mA<br>21.4 700 mA ot t --45 n e<br>VDD = 50 Vdc, f1 = 859.9 MHz, f2 = 860 MHz<br>21.2<br>Two--Tone Measurements, 100 kHz Tone Spacing<br>21 Ee --50 e<br>50 500 50 500<br>Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP<br>Figure 12. Two--Tone Power Gain versus Figure 13. Third Order Intermodulation<br>Output Power Distortion versus Output Power<br>IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc)<br>, POWER GAIN (dB)<br>ps IMD, THIRD ORDER<br>G<br>INTERMODULATION DISTORTION (dBc)<br>**----- End of picture text -----**<br> **Figure 12. Two--Tone Power Gain versus Output Power** **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 8 **TYPICAL CHARACTERISTICS — OFDM** **==> picture [344 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> --20<br>7.61 MHz<br>--30 EEE"es EEEee<br>--40<br>--50 4 kHz BW 4 kHz BW<br>A RR EE RR R<br>--60<br>XC) (ER SS<br>ACPR Measured at 4 MHz Offset<br>--70<br>from Center Frequency<br>NGG --80 ee mA \ oe<br>--90<br>8K Mode DVB--T OFDM<br>--100 64 QAM Data Carrier Modulation, 5 Symbols<br>--110<br>8 10 12 --5 --4 --3 --2 --1 0 1 2 3 4 5<br>f, FREQUENCY (MHz)<br>(dB)<br>**----- End of picture text -----**<br> **==> picture [244 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10 | :<br>1<br>CPPS)<br>XC)<br>0.1<br>8K Mode DVB--T OFDM<br>64 QAM Data Carrier Modulation<br>NGG<br>0.01<br>5 Symbols<br>0.00010.001 ee<br>0 2 4 6 8 10 12<br>PEAK--TO--AVERAGE (dB)<br>PROBABILITY (%)<br>**----- End of picture text -----**<br> **Figure 14. Single--Carrier DVB--T OFDM** **Figure 15. 8K Mode DVB--T OFDM Spectrum** **==> picture [501 x 426] intentionally omitted <==** **----- Start of picture text -----**<br> 23 --50<br>ee ee ee Ge ee VDD = 50 Vdc, f = 860 MHz<br>22.5 IDQ = 1400 mA 8K Mode OFDM, 64 QAM Data Carrier<br>e es Modulation, 5 Symbols<br>22 — aa = ee Y<br>21.5 975 mA --60 IDQ = 700 mA<br>—“ 1075 mA 1250 mA 975 mA ro ge;<br>21<br>700 mA<br>ee e ee = > ae<br>20.5 VDD = 50 Vdc, f = 860 MHz<br>8K Mode OFDM, 64 QAM Data Carrier<br>Modulation, 5 Symbols 1400 mA 1250 mA 1075 mA<br>20 Poee e s coe --70 aa sed<br>20 100 200 20 100 200<br>Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 16. Single--Carrier DVB--T OFDM Power Figure 17. Single--Carrier DVB--T OFDM ACPR<br>Gain versus Output Power versus Output Power<br>65 --46<br>60 VDD = 50 Vdc, IDQ = 1400 mA Baa 25 _ C 85 _ C --48<br>55 f = 860 MHz, 8K Mode OFDM --30 _ C --50<br>50 64 QAM Data Carrier Modulation | [| AX 2_| --52<br>5 Symbols<br>45 ACPR --54<br>40 eeeee ee +,eeAAfA --56<br>35 nnn ηD --58<br>30 ee eS Aan --60<br>25 TC = --30 _ C --62<br>1520 25 _ C 85 _ C Gps --64--66<br>105 a --68--70<br>0 ee ee ee --72<br>10 100 300<br>Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 18. Single--Carrier DVB--T OFDM ACPR Power<br>Gain and Drain Efficiency versus Output Power<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR, ADJACENT CHANNEL POWER RATIO (dBc)<br>, POWER GAIN (dB)<br>ps<br>, DRAIN EFFICIENCY (%), G ACPR, ADJACENT CHANNEL POWER RATIO (dBc)<br>D<br>η<br>**----- End of picture text -----**<br> **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 9 ## **TYPICAL CHARACTERISTICS — 470--860 MHz** **==> picture [258 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 23 60<br>22.5 Gps<br>Pot | ETT ee TT<br>22 P t 50<br>21.5 860 MHz<br>21 eear cane|rrrOWL aaNTE 40<br>20.5 665 MHz<br>20 470 MHz 860 MHz Z 665 MHz 30<br>19.5 | Hy AN<br>19 470 MHz 20<br>18.5 | | | ηD LUT<br>18 a | et | | | | |TTT 10<br>17.5 VDD = 50 Vdc, IDQ = 1200 mA<br>17 |S| Pulse Width = 50 e μsec, Duty Cycle = 2.5% riL 0<br>10 100 1000<br>Pout, OUTPUT POWER (WATTS) PULSED<br>, POWER GAIN (dB)<br>ps<br>G DRAIN EFFICIENCY (%)D,<br>η<br>**----- End of picture text -----**<br> **Figure 19. Broadband Pulsed Power Gain and Drain Efficiency versus Output Power — 470--860 MHz** **==> picture [299 x 397] intentionally omitted <==** **----- Start of picture text -----**<br> 27 70<br>26 VDD = 50 Vdc, Pout = P1dB, IDQ = 1200 mA<br>Pulse Width = 50 μsec, Duty Cycle = 2.5%<br>25 NTT : 60<br>24 ηD<br>23 ACN E T 50<br>CALNE<br>22 7 SEE ARNT 700<br>21 eo Gps tN 40 650<br>20 PCCPERSE 600<br>19 AON TT 30 550<br>P1dB<br>18 PTT EEE EN 500<br>17 POCO N RRSeer 20 450<br>470 500 530 560 590 620 650 680 710 740 770 800 830 860<br>f, FREQUENCY (MHz)<br>Figure 20. Pulsed Power Gain and Drain Efficiency<br>versus Frequency at P1dB — 470--860 MHz<br>50 --50<br>45 V64 QAM Data Carrier Modulation, 5 SymbolsDD = 50 Vdc, IDQ = 1400 mA, 8K Mode OFDM 860 MHz<br>40 --55<br>So [pul] [l] fe<br>35 665 MHz<br>470 MHz<br>30 tt l/s --60<br>470 MHz<br>25 SANITpp 860 MHz Gps a<br>20 --65<br>15 665 MHz<br>ACPR<br>10 =L itt --70<br>5 ca ηD<br>0 eT Tri --75<br>3 10 100 300<br>Pout, OUTPUT POWER (WATTS) AVG.<br>, POWER GAIN (dB)<br>ps , DRAIN EFFICIENCY (%)<br>G D<br>η<br>P1dB (WATTS)<br>, POWER GAIN (dB)<br>ps<br>, DRAIN EFFICIENCY (%), G ACPR, ADJACENT CHANNEL POWER RATIO (dBc)<br>D<br>η<br>**----- End of picture text -----**<br> **Figure 21. Single--Carrier DVB--T OFDM ACPR, Power Gain and Drain Efficiency versus Output Power — 470--860 MHz** **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 10 ## **TYPICAL CHARACTERISTICS — 470--860 MHz** **==> picture [294 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 24 36<br>23 34<br>SOUEEEEEEEEEE Gps<br>22 32<br>( J N<br>21 30<br>ALL INT | TT [Pree]<br>ηD<br>20 28 0<br>7ENAEEE<br>19 26 --2<br>Pi | A<br>18 IRL 24 --4<br>aa VDD = 50 Vdc, IDQ = 1400 mA ane an<br>17 Pout = 90 W Avg., 8K Mode OFDM 22 --6<br>16 pT 64 QAM Data Carrier Modulation, 5 Symbols ann 20 --8<br>470 500 530 560 590 620 650 680 710 740 770 800 830 860<br>f, FREQUENCY (MHz)<br>, POWER GAIN (dB)<br>ps<br>G<br>, DRAIN EFFICIENCY (%)<br>D<br>η<br>IRL, INPUT RETURN LOSS (dB)<br>**----- End of picture text -----**<br> **Figure 22. Single--Carrier DVB--T OFDM Power Gain, Drain Efficiency and IRL versus Frequency — 470--860 MHz** ## **TYPICAL CHARACTERISTICS** **==> picture [239 x 234] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [9]<br>10 [8]<br>10 [7]<br>a<br>10 [6]<br>a<br>10 [5]<br>ssnsssnsssessee=<br>10 [4] BERR EERE<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (°C)<br>This above graph displays calculated MTTF in hours when the device<br>is operated at VDD = 50 Vdc, Pout = 90 W Avg., and ηD = 28%.<br>MTTF calculator available at http://www.freescale.com/rf. Select<br>Software & Tools/Development Tools/Calculators to access MTTF<br>calculators by product.<br>MTTF (HOURS)<br>**----- End of picture text -----**<br> **Figure 23. MTTF versus Junction Temperature** **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 11 **==> picture [393 x 474] intentionally omitted <==** **==> picture [213 x 66] intentionally omitted <==** **----- Start of picture text -----**<br> Input Device Output<br>Matching + Under -- Matching<br>Network Test Network<br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 24. Series Equivalent Source and Load Impedance** **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 12 ## **PACKAGE DIMENSIONS** **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 13 **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 14 **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 15 **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 16 ## **PRODUCT DOCUMENTATION AND SOFTWARE** Refer to the following documents to aid your design process. ## **Application Notes** - AN1955: Thermal Measurement Methodology of RF Power Amplifiers ## **Engineering Bulletins** - EB212: Using Data Sheet Impedances for RF LDMOS Devices ## **Software** - Electromigration MTTF Calculator - RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. ## **REVISION HISTORY** The following table summarizes revisions to this document. |**Revision**|**Date**|**Description**| |---|---|---| |0|July 2008|•<br>Initial Release of Data Sheet| |1|Aug. 2008|•<br>Corrected component designation part number for C34, 35 in Table 5. Test Circuit Component Designation<br>and Values, p. 5<br>•<br>Added Note to Fig. 4, Capacitance versus Drain--Source Voltage and Fig. 5, DC Safe Operating Area to<br>denote that each side of device is measured separately, p. 7<br>•<br>Adjusted imaginary component signs in Fig. 24, Series Equivalent Source and Load Impedance data table<br>and replotted data, p. 12| |2|Sept. 2008|•<br>Fig. 24, Series Equivalent Source and Load Impedance, corrected Zsourcecopy to read ”Test circuit<br>impedance as measured from gate to gate, balanced configuration” and Zloadcopy to read ”Test circuit<br>impedance as measured from gate to gate, balanced configuration”, p. 12| |2.1|Nov. 2008|•<br>Corrected Fig. 24 Revision History Zloadcopy to read ”Test circuit impedance as measured from drain to<br>drain, balanced configuration”, p. 12| |3|July 2009|• Added capability of handling 10:1 VSWR @ 50 Vdc, 850 MHz, 450 Watts CW, p. 1<br>•<br>Added thermal resistance at 450 W CW, Thermal Characteristics table, p. 2<br>•<br>Corrected Fig. 23, MTTF versus Junction Temperature, to match values given by the MRF6VP3450H/HS<br>MTTF calculator, p. 11<br>•<br>Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 17| |4|Apr. 2010|•<br>Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related<br>“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1<br>•<br>Reporting of pulsed thermal data now shown using the ZθJCsymbol, p. 2<br>•<br>Fig. 2, Test Circuit Schematic, Z--list, corrected Z4, Z5 from 1.400″x 0.590″Microstrip to 1.400″x 0.059″<br>Microstrip, p. 4| **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor 17 ## _**How to Reach Us:**_ **Home Page:** www.freescale.com ## **Web Support:** http://www.freescale.com/support **USA/Europe or Locations Not Listed:** Freescale Semiconductor, Inc. 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Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale t and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008--2010. All rights reserved. **MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5** RF Device Data Freescale Semiconductor Document Number: MRF6VP3450H 18Rev. 4, 4/2010
Updated at February 9, 2023
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