# Bipolar (BJT) Single Transistor, Darlington, NPN, 50 V, 1 A, 2.5 W, TO-92, Through Hole ![Product image](https://novapart.co/image/farnell:2101391/) **URL**: https://novapart.co/products/MPSW45AG/bipolar-bjt-single-transistor-darlington-npn-50-v **SKU**: MPSW45AG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0700 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 2.5W | | Dc Current Gain Hfe | 25000hFE | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transition Frequency | 100MHz | | Transistor Case Style | TO-92 | | Dc Current Gain Hfe Min | 25000hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 1A | | Collector Emitter Voltage Max | 50V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2101391/) ## MPSW45, MPSW45A ## One Watt Darlington Transistors ## **NPN Silicon** **Features http://onsemi.com** • Pb−Free Packages are Available* COLLECTOR 3 BASE **MAXIMUM RATINGS** 2 **Rating Symbol Value Unit** ~~&~~ EMITTER 1 Collector−Emitter Voltage MPSW45 VCES 40 Vdc MPSW45A 50 Collector−Base Voltage MPSW45 VCBO 50 Vdc MPSW45A 60 Emitter−Base Voltage VEBO 12 Vdc Collector Current − Continuous IC 1.0 Adc Derate above 25Total Device Dissipation @ T ° C A = 25 ° C PD 1.08.0 mW/W ° C 1 **TO−92 1 WATTCASE 29−10(TO−226)** Total Device Dissipation @ TC = 25 ° C PD 2.5 W 1 23 2 3 **STYLE 1** Derate above 25 ° C 20 mW/ ° C STRAIGHT LEAD BENT LEAD Operating and Storage Junction TJ, Tstg −55 to +150 ° C BULK PACK TAPE & REELAMMO PACK Temperature Range ~~=~~ **THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit** Thermal Resistance, Junction−to−Ambient R JA 125 ° C/W MPS Thermal Resistance, Junction−to−Case R JC 50 ° C/W W45x **==> picture [147 x 139] intentionally omitted <==** **----- Start of picture text -----**
MPS
W45x
AYWW
MPSW45x = Device Code
x = 45A Devices
A = Assembly Location
Y = Year
WW = Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
**----- End of picture text -----**
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MPSW45/D** **1** © Semiconductor Components Industries, LLC, 2010 **August, 2010 − Rev. 4** **MPSW45, MPSW45A** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Breakdown Voltage
(IC= 100�Adc, VBE= 0)
MPSW45
MPSW45A|V(BR)CES|40
50|−
−|Vdc| |Collector−Base Breakdown Voltage
(IC= 100�Adc, IE= 0)
MPSW45
MPSW45A|V(BR)CBO|50
60|−
−|Vdc| |Emitter−Base Breakdown Voltage
(IE= 10�Adc, IC= 0)|V(BR)EBO|12|−|Vdc| |Collector Cutoff Current
(VCB= 30 Vdc, IE= 0)
MPSW45
(VCB= 40 Vdc, IE= 0)
MPSW45A|ICBO|−
−|100
100|nAdc| |Emitter Cutoff Current
(VEB= 10 Vdc, IC= 0)|IEBO|−|100|nAdc| |**ON CHARACTERISTICS**(Note 1)||||| |DC Current Gain
(IC= 200 mAdc, VCE= 5.0 Vdc)
(IC= 500 mAdc, VCE= 5.0 Vdc)
(IC= 1.0 Adc, VCE= 5.0 Vdc)|hFE|25,000
15,000
4,000|150,000
−
−|−| |Collector−Emitter Saturation Voltage
(IC= 1.0 Adc, IB= 2.0 mAdc)|VCE(sat)|−|1.5|Vdc| |Base−Emitter Saturation Voltage
(IC= 1.0 Adc, IB= 2.0 mAdc)|VBE(sat)|−|2.0|Vdc| |Base−Emitter On Voltage
(IC= 1.0 Adc, VCE= 5.0 Vdc)|VBE(on)|−|2.0|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**||||| |Current−Gain − Bandwidth Product
(IC= 200 mAdc, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|MHz| |Collector−Base Capacitance
(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)|Ccb|−|6.0|pF| 1. Pulse Test: Pulse Width � 300 � s; Duty Cycle � 2.0%. **==> picture [182 x 125] intentionally omitted <==** **----- Start of picture text -----**
RS
in
en
IDEAL
TRANSISTOR
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**Figure 1. Transistor Noise Model** **http://onsemi.com** **2** **MPSW45, MPSW45A** ## **NOISE CHARACTERISTICS** (VCE = 5.0 Vdc, TA = 25 ° C) **==> picture [487 x 383] intentionally omitted <==** **----- Start of picture text -----**
500 2.0
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
RS ≈ 0 1.0
200
0.7
0.5
100 IC = 1.0 mA
10 �A 0.3
50 0.2
100 �A 0.1 100 �A
20
0.07
I C = 1.0 mA 0.05 10 �A
10
0.03
5.0 0.02
10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k 10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)
Figure 2. Noise Voltage Figure 3. Noise Current
200 14
BANDWIDTH = 10 Hz TO 15.7 kHz
12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
10
70 IC = 10 �A 10 �A
8.0
50
100 �A
6.0
30 100 �A
4.0 IC = 1.0 mA
20
1.0 mA
2.0
10 0
1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000
RS, SOURCE RESISTANCE (kΩ) RS, SOURCE RESISTANCE (kΩ)
en, NOISE VOLTAGE (nV) in, NOISE CURRENT (pA)
NF, NOISE FIGURE (dB)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
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**Figure 4. Total Wideband Noise Voltage** **Figure 5. Wideband Noise Figure** **http://onsemi.com** **3** **MPSW45, MPSW45A** ## **SMALL−SIGNAL CHARACTERISTICS** **==> picture [487 x 594] intentionally omitted <==** **----- Start of picture text -----**
20 4.0
VCE = 5.0 V
10 TJ = 25°C 2.0 f = 100 MHz TJ = 25 ° C
7.0 Cibo
1.0
5.0 Cobo 0.8
0.6
3.0 0.4
2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 6. Capacitance Figure 7. High Frequency Current Gain
200�k 3.0
TJ = 125 ° C TJ = 25°C
100�k
2.5
70�k50�k 25°C IC = 10 mA 50 mA 250 mA 500 mA
30�k 2.0
20�k
1.5
10�k
7.0�k -�55°C
5.0�k 1.0
V CE = 5.0 V
3.0�k
2.0�k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (�A)
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
1.6 -�1.0
TJ = 25°C *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C
1.4 -�2.0 *R�VC FOR VCE(sat)
VBE(sat) @ IC/IB = 1000 -�55°C TO 25°C
1.2 -�3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C
1.0 -�4.0
�VB FOR VBE
0.8 -�5.0 -�55°C TO 25°C
VCE(sat) @ IC/IB = 1000
0.6 -�6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
|hfe|, SMALL-SIGNAL CURRENT GAIN
hFE, DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
C)°
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/
θ
R
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**Figure 10. “On” Voltages** **Figure 11. Temperature Coefficients** **http://onsemi.com 4** **MPSW45, MPSW45A** **==> picture [490 x 371] intentionally omitted <==** **----- Start of picture text -----**
1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2
0.05 SINGLE PULSE
0.1
0.1
0.07 SINGLE PULSE
0.05
0.03 ZθJC(t) = r(t) • RθJC�TJ(pk) - TC = P(pk) ZθJC(t)
0.02 Zθ JA(t) = r(t) • Rθ JA �T J(pk) - T A = P (pk) Zθ JA(t)
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k
t, TIME (ms)
Figure 12. Thermal Response
1.0�k
FIGURE A
700 1.0 ms
500
t P
300200 TA = 25°C TC = 25°C1.0 s 100 �s PP PP
100
70
50
t1
30
CURRENT LIMIT
20 THERMAL LIMIT 1/f
SECOND BREAKDOWN LIMIT
10 DUTY�CYCLE � t1�f � [t][1]
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 tP
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) PEAK PULSE POWER = PP
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
IC, COLLECTOR CURRENT (mA)
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**Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |MPSW45G|TO−92
(Pb−Free)|5,000 Units / Box| |MPSW45RLREG|TO−92
(Pb−Free)|2,000 / Tape & Reel| |MPSW45A|TO−92|5,000 Units / Box| |MPSW45AG|TO−92
(Pb−Free)|5,000 Units / Box| |MPSW45ARLRA|TO−92|2,000 / Tape & Reel| |MPSW45ARLRAG|TO−92
(Pb−Free)|2,000 / Tape & Reel| |MPSW45AZL1|TO−92|2,000 / Ammo Pack| |MPSW45AZL1G|TO−92
(Pb−Free)|2,000 / Ammo Pack| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **http://onsemi.com** **5** **MPSW45, MPSW45A** ## **PACKAGE DIMENSIONS** **TO−92 (TO−226) 1 WATT** CASE 29−10 ISSUE O **==> picture [218 x 404] intentionally omitted <==** **----- Start of picture text -----**
A
STRAIGHT LEAD
+ — BULK PACK
B
R
P
L
alla F y
| K
X X D
G
H J
se
V C
SECTION X−X
ty 1 N )
N
2
A
R BENT LEAD
TAPE & REEL
B
AMMO PACK
' ~,
P
T
SEATINGPLANE K
7ii X X | D
G
J
V
C
SECTION X−X
1 N
way
**----- End of picture text -----**
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. **==> picture [175 x 356] intentionally omitted <==** **----- Start of picture text -----**
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN DI­
MENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
D 0.018 0.021 0.46 0.53
F 0.016 0.019 0.41 0.48
-===— G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.018 0.024 0.46 0.61
K 0.500 --- 12.70 ---
EEE L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66 STYLE 1:
P --- 0.100 --- 2.54 PIN 1. EMITTER
R 0.135 --- 3.43 --- 2. BASE
V 0.135 --- 3.43 --- 3. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
[ [| UNCONTROLLED. [ [ {[ |
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN
DIMENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.44 5.21
Se B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
D 0.018 0.021 0.46 0.53
G 0.094 0.102 2.40 2.80
J 0.018 0.024 0.46 0.61
K 0.500 --- 12.70 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.135 --- 3.43 ---
V 0.135 --- 3.43 ---
EEE
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