# Bipolar (BJT) Single Transistor, General Purpose, PNP, 300 V, 500 mA, 625 mW, TO-92, Through Hole

![Product image](https://novapart.co/image/farnell:2101806/)

**URL**: https://novapart.co/products/MPSA92G/bipolar-bjt-single-transistor-general-purpose-pnp
**SKU**: MPSA92G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0460
**Stock**: 10+

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:50MHz; Power Dissipation Pd:625mW; DC Collector Current:-500mA; DC Current Gain hFE:50hFE; Tra

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 625mW |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 50MHz |
| Transistor Case Style | TO-92 |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 300V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2101806/)

## MPSA92, MPSA93 

MPSA92, MPSA93 High Voltage Transistors **PNP Silicon Features http://onsemi.com** • Pb−Free Packages are Available* **MAXIMUM RATINGS Rating Symbol Value Unit TO−92** Collector−Emitter Voltage MPSA93 VCEO −200 Vdc 1 **CASE 29−11(TO−226AA)** MPSA92 −300 ti 2 1 23[@] 3 Collector−Base Voltage VCBO Vdc STRAIGHT LEAD BENT LEAD MPSA93 −200 BULK PACK TAPE & REEL MPSA92 −300 AMMO PACK Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −500 mAdc COLLECTOR **MARKING** Total Device Dissipation PD 3 **DIAGRAM** @ TDerate above 25A = 25°C °C 6255.0 mW/mW°C 2 MPS Total Device Dissipation PD BASE A9x @ TDerate above 25C = 25°C °C 1.512 mW/W°C AYWW 1 Operating and Storage Junction TJ, Tstg −55 to °C EMITTER Temperature Range +150 ~~=.~~ **THERMAL CHARACTERISTICS** x = 2 or 3 A = Assembly Location **Characteristic Symbol Max Unit** Y = Year Thermal Resistance, R JA 200 °C/W WW = Work Week Junction−to−Ambient = Pb−Free Package (Note: Microdot may be in either location) Thermal Resistance, R JC 83.3 °C/W Junction−to−Case 

## High Voltage Transistors **PNP Silicon** 

## **Features** 

- Pb−Free Packages are Available* 

x = 2 or 3 A = Assembly Location Y = Year WW = Work Week = Pb−Free Package (Note: Microdot may be in either location) 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MPSA92/D** 

**1** 

©  Semiconductor Components Industries, LLC, 2010 **July, 2010 − Rev. 6** 

**MPSA92, MPSA93** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25°C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage (Note 1)<br>(IC= −1.0 mAdc, IB= 0)<br>MPSA92<br>MPSA93|V(BR)CEO|−300<br>−200|−<br>−|Vdc|
|Collector−Base Breakdown Voltage<br>(IC= −100�Adc, IE= 0)<br>MPSA92<br>MPSA93|V(BR)CBO|−300<br>−200|−<br>−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= −100�Adc, IC= 0)|V(BR)EBO|−5.0|−|Vdc|
|Collector Cutoff Current<br>(VCB= −200 Vdc, IE= 0)<br>MPSA92<br>(VCB= −160 Vdc, IE= 0)<br>MPSA93|ICBO|−<br>−|−0.25<br>−0.25|�Adc|
|Emitter Cutoff Current<br>(VEB= −3.0 Vdc, IC= 0)|IEBO|−|−0.1|�Adc|
|**ON CHARACTERISTICS**(Note 1)|||||
|DC Current Gain<br>(IC= −1.0 mAdc, VCE= −10 Vdc)<br>All Types<br>(IC= −10 mAdc, VCE= −10 Vdc)<br>All Types<br>(IC= −30 mAdc, VCE= −10 Vdc)<br>MPSA92<br>MPSA93|hFE|25<br>40<br>25<br>25|−<br>−<br>−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= −20 mAdc, IB= −2.0 mAdc)<br>MPSA92<br>MPSA93|VCE(sat)|−<br>−|−0.5<br>−0.4|Vdc|
|Base−Emitter Saturation Voltage<br>(IC= −20 mAdc, IB= −2.0 mAdc)|VBE(sat)|−|−0.9|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mAdc, VCE= −20 Vdc, f = 100 MHz)|fT|50|−|MHz|
|Collector−Base Capacitance<br>(VCB= −20 Vdc, IE= 0, f = 1.0 MHz)<br>MPSA92<br>MPSA93|Ccb|−<br>−|6.0<br>8.0|pF|



1. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2%. 

**http://onsemi.com** 

**2** 

**MPSA92, MPSA93** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|MPSA92G|TO−92<br>(Pb−Free)|5000 Units / Box|
|MPSA92RL1G|TO−92<br>(Pb−Free)|2000 / Tape & Reel|
|MPSA92RLRA|TO−92|2000 / Tape & Reel|
|MPSA92RLRAG|TO−92<br>(Pb−Free)|2000 / Tape & Reel|
|MPSA92RLRMG|TO−92<br>(Pb−Free)|2000 / Ammo Pack|
|MPSA92RLRPG|TO−92<br>(Pb−Free)|2000 / Ammo Pack|
|MPSA92ZL1G|TO−92<br>(Pb−Free)|2000 / Ammo Pack|
|MPSA93G|TO−92<br>(Pb−Free)|5000 Units / Box|
|MPSA93RLRMG|TO−92<br>(Pb−Free)|2000 / Ammo Pack|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**==> picture [483 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>TJ = +125 ° C VCE = 10 Vdc<br>250<br>200<br>25 ° C<br>150<br>-55 ° C<br>100<br>50<br>0<br>0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 1. DC Current Gain** 

**http://onsemi.com** 

**3** 

**MPSA92, MPSA93** 

**==> picture [238 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Cib @ 1MHz<br>10<br>Ccb @ 1MHz<br>1.0<br>0.1<br>0.1 1.0 10 100 1000<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 2. Capacitance** 

**==> picture [235 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
150<br>130<br>110<br>90<br>70<br>50 TJ = 25 ° C<br>VCE = 20 Vdc<br>30 F = 20 MHz<br>10<br>1 3 5 7 9 11 13 15 17 19 21<br>IC, COLLECTOR CURRENT (mA)<br>f�, CURRENT-GAIN — BANDWIDTH (MHz)T<br>**----- End of picture text -----**<br>


**Figure 3. Current−Gain − Bandwidth** 

**==> picture [240 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V 

**Figure 4. ”ON” Voltages** 

**==> picture [246 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>10 ms<br>0.1<br>1.0 s<br>0.01<br>0.001<br>1 10 100 1000<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 5. Safe Operating Area** 

**http://onsemi.com** 

**4** 

**MPSA92, MPSA93** 

## **PACKAGE DIMENSIONS** 

**TO−92 (TO−226)** CASE 029−11 ISSUE AM 

NOTES: 

**==> picture [377 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI<br>BULK PACK Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R<br>SEE IS UNCONTROLLED.<br>4. LEAD DIMENSION IS UNCONTROLLED IN P AND<br>P BEYOND DIMENSION K MINIMUM.<br>L<br>SEATING INCHES MILLIMETERS<br>PLANE K DIM MIN MAX MIN MAX<br>Vi A 0.175 0.205 4.45 5.20<br>B 0.170 0.210 4.32 5.33<br>C 0.125 0.165 3.18 4.19<br>D 0.016 0.021 0.407 0.533<br>X = X D aEEE G 0.045 0.055 1.15 1.39<br>G H 0.095 0.105 2.42 2.66<br>J 0.015 0.020 0.39 0.50<br>ye H J ——— K 0.500 --- 12.70 ---<br>L 0.250 --- 6.35 ---<br>V C N 0.080 0.105 2.04 2.66<br>P --- 0.100 --- 2.54<br>SECTION X−X R 0.115 --- 2.93 ---<br>1 N V 0.135 --- 3.43 ---<br>N STYLE 14:<br>ome 2 PIN 1. EMITTER<br>2. COLLECTOR<br>3. BASE<br>**----- End of picture text -----**<br>


NOTES: 

**==> picture [363 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
R A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER<br>TAPE & REEL ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>AMMO PACK 3. CONTOUR OF PACKAGE BEYOND<br>DIMENSION R IS UNCONTROLLED.<br>4. LEAD DIMENSION IS UNCONTROLLED IN P<br>P AND BEYOND DIMENSION K MINIMUM.<br>T<br>MILLIMETERS<br>SEATING<br>PLANE K DIM MIN MAX<br>Bi A 4.45 5.20<br>B 4.32 5.33<br>C 3.18 4.19<br>D 0.40 0.54<br>X X D G 2.40 2.80<br>G KJ 12.700.39 0.50---<br>J N 2.04 2.66<br>a id V C = RP 1.502.93 4.00---<br>He| i 4 = V 3.43 ---<br>SECTION X−X<br>1 N<br>on<br>**----- End of picture text -----**<br>


1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

4. LEAD DIMENSION IS UNCONTROLLED IN P 

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**MPSA92/D** 

**5** 



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