# Bipolar (BJT) Single Transistor, NPN, 400 V, 300 mA, 625 mW, TO-92, Through Hole

![Product image](https://novapart.co/image/farnell:1574391/)

**URL**: https://novapart.co/products/MPSA44/bipolar-bjt-single-transistor-npn-400-v-300-ma-625
**SKU**: MPSA44
**Manufacturer**: MULTICOMP PRO
**Price**: €0.0560
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:625mW; DC Collector Current:300mA; DC Current Gain hFE:50hFE; Transistor Case Styl

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 625mW |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | TO-92 |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 300mA |
| Collector Emitter Voltage Max | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1574391/)

## **High Voltage Transistor** 

## **Features:** 

- Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes 

- NPN epitaxial planar silicon transistor 

- Designed for General Purpose Applications Requiring High Breakdown Voltages, Low Saturation Voltages and Low Capacitance 

## **Pin Configuration:** 

1. Collector 

2. Base 

3. Emitter 

## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**||||
|---|---|---|---|
|**Parameters**|**Symbol**|**Value**|**Units**|
|Collector Emitter Voltage|VCEO|400|V|
|Collector Base Voltage|VCBO|500||
|Emitter Base Voltage|VEBO|6||
|Collector Current Continuous|IC|300|mA|
|Power Dissipation at  Ta= 25°C<br>TC= 25°C|PTA<br>PTC|625<br>1.5|mW<br>W|
|Operating and Storage Junction Temperature<br>Range|Tj, Tstg|-55 to +150|°C|



## **Electrical Characteristics (Ta = 25°C unless otherwise specified)** 

|**Parameters**|**Symbol**|**Test Condition**|**Minimum**|**Units**|
|---|---|---|---|---|
|Collector-Emitter Voltage|VCEO*<br>VCES|IC= 1mA, IB= 0<br>IC= 100µA, VBE=0|>400<br>>500|V|
|Collector-Base Voltage|VCBO|IC= 100µA, IE= 0|>500||
|Emitter-Base Voltage|VEBO|IE= 10µA, IC= 0|>6||
|Collector-Cut off Current|ICBO<br>ICES|VCB= 400V, IE= 0<br>VCE= 400V, IB= 0|<100<br><500|nA|



*Pulse Test : Pulse Width = 300μs, Duty Cycle = 2%. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

Page <1> 18/09/19 V1.0 

## **High Voltage Transistor** 

## **Electrical Characteristics (Ta = 25°C unless otherwise specified)** 

||**Parameters**|**Symbol**|**Test Condition**|**Minimum**|**Units**|
|---|---|---|---|---|---|
||Emitter-Cut off Current|IEBO|VEB= 4V, IC= 0|<100|nA|
||||IC= 1mA, VCE= 10V|>40||
||DC Current Gain|hFE*|IC= 10mA, VCE= 10V|50-200|-|
||||IC= 50mA, VCE= 10V|>45||
||||IC= 1mA, IB= 0.1mA|<0.4||
||Collector Emitter Saturation Voltage|VCE (sat)*|IC= 10mA, IB= 1mA|<0.5|V|
||||IC= 50mA, IB= 5mA|<0.75||
||Base Emitter Saturation Voltage|VBE (sat)*|IC= 10mA, IB= 1mA|<0.75||
|**Dynamic Characteristics**||||||
||Output Capacitance|Cob|VCB= 20V, IE= 0,<br>f = 1MHz|<7||
||Input Capacitance|Cib|VEB= 0.5V, IC= 0,<br>f = 1MHz|<130|pF|
||Small Signal Current Gain|hfe|IC= 10mA, VCE= 10V,<br>f = 10MHz|>2|-|



*Pulse Test : Pulse Width = 300μs, Duty Cycle = 2%. 

|**Dimensions**|**Minimum**|**Maximum**|
|---|---|---|
|A|4.32|5.33|
|B|4.45|5.2|
|C|3.18|4.19|
|D|0.41|0.55|
|E|0.35|0.5|
|F|5°||
|G|1.14|1.4|
|H||1.53|
|K|12.7|-|



Dimensions : Millimetres 

**Pin Configuration:** 

1. Collector 

2. Base 

3. Emitter 

## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Transistor, NPN, TO-92|MPSA44|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

18/09/19 V1.0 

Page <2> 



## Links

- [View this product on Novapart](https://novapart.co/products/MPSA44/bipolar-bjt-single-transistor-npn-400-v-300-ma-625)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/mpsa44/transistor-npn-to-92/dp/1574391)
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