# Bipolar (BJT) Single Transistor, NPN, 300 V, 500 mA, 625 mW, TO-92, Through Hole
**URL**: https://novapart.co/products/MPSA42/bipolar-bjt-single-transistor-npn-300-v-500-ma-625
**SKU**: MPSA42
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0540
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:40hFE; Tran
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 625mW |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 50MHz |
| Transistor Case Style | TO-92 |
| Dc Current Gain Hfe Min | 25hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 300V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1017719/)
## **ON Semiconductor**
## **Is Now**
**==> picture [390 x 69] intentionally omitted <==**
**To learn more about onsemi™, please visit our website at www.onsemi.com**
**onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
## MPSA42, MPSA43
## High Voltage Transistors **NPN Silicon**
## **Features**
**==> picture [482 x 402] intentionally omitted <==**
**----- Start of picture text -----**
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|•|These are Pb−Free Devices*|http://onsemi.com|
|COLLECTOR|
|3|
|MAXIMUM RATINGS|2|
|BASE|
|Rating|Symbol|Value|Unit|
|Collector−Emitter Voltage|VCEO|Vdc|&|)|
|MPSA43|200|1|
|MPSA42|300|EMITTER|
|Collector−Base Voltage|VCBO|Vdc|
|MPSA43|200|
|MPSA42|300|
|Emitter−Base Voltage|VEBO|6.0|Vdc|
|Collector Current − Continuous|IC|500|mAdc|
|Total Device Dissipation|PD|TO−92|
|@ TA = 25|°|C|625|mW|1|(TO−226AA)|
|Derate above 25|°|C|5.0|mW/|°|C|1 23|2|3|CASE 29−11|
|Total Device Dissipation|PD|STRAIGHT LEAD|BENT LEAD|
|@ TC = 25|°|C|1.5|W|
|Derate above 25|°|C|12|mW/|°|C|MARKING DIAGRAM|
|Operating and Storage Junction|TJ, Tstg|−55 to|°|C|
|Temperature Range|+150|MPS|
|=e|
|A4x|
|THERMAL CHARACTERISTICS|
|AYWW|
|Characteristic|Symbol|Max|Unit|
|Thermal Resistance,|R|JA|200|°|C/W|
|Junction−to−Ambient|
|Thermal Resistance,|R|JC|83.3|°|C/W|x|=|2 or 3|
|Junction−to−Case|A|= Assembly Location|
|Y|=|Year|
|Stresses exceeding Maximum Ratings may damage the device. Maximum|
|Ratings are stress ratings only. Functional operation above the Recommended|WW|=|Work Week|
|Operating Conditions is not implied. Extended exposure to stresses above the|= Pb−Free Package|
|Recommended Operating Conditions may affect device reliability.|(Note: Microdot may be in either location)|
**----- End of picture text -----**
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
## **ORDERING INFORMATION**
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Publication Order Number: **MPSA42/D**
**1**
© Semiconductor Components Industries, LLC, 2013 **February, 2013 − Rev. 8**
**MPSA42, MPSA43**
## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted)
|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage (Note 1)
(IC= 1.0 mAdc, IB= 0)
MPSA42
MPSA43|V(BR)CEO|300
200|−
−|Vdc|
|Collector−Base Breakdown Voltage
(IC= 100�Adc, IE= 0)
MPSA42
MPSA43|V(BR)CBO|300
200|−
−|Vdc|
|Emitter−Base Breakdown Voltage
(IE= 100�Adc, IC= 0)|V(BR)EBO|6.0|−|Vdc|
|Collector Cutoff Current
(VCB= 200 Vdc, IE= 0)
MPSA42
(VCB= 160 Vdc, IE= 0)
MPSA43|ICBO|−
−|0.1
0.1|�Adc|
|Emitter Cutoff Current
(VEB= 6.0 Vdc, IC= 0)
MPSA42
(VEB= 4.0 Vdc, IC= 0)
MPSA43|IEBO|−
−|0.1
0.1|�Adc|
|**ON CHARACTERISTICS**(Note 1)|||||
|DC Current Gain
(IC= 1.0 mAdc, VCE= 10 Vdc)
(IC= 10 mAdc, VCE= 10 Vdc)
(IC= 30 mAdc, VCE= 10 Vdc)|hFE|25
40
40|−
−
−|−|
|Collector−Emitter Saturation Voltage
(IC= 20 mAdc, IB= 2.0 mAdc)
MPSA42
MPSA43|VCE(sat)|−
−|0.5
0.4|Vdc|
|Base−Emitter Saturation Voltage
(IC= 20 mAdc, IB= 2.0 mAdc)|VBE(sat)|−|0.9|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product
(IC= 10 mAdc, VCE= 20 Vdc, f = 100 MHz)|fT|50|−|MHz|
|Collector−Base Capacitance
(VCB= 20 Vdc, IE= 0, f = 1.0 MHz)
MPSA42
MPSA43|Ccb|−
−|3.0
4.0|pF|
1. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2%.
**http://onsemi.com**
**2**
**MPSA42, MPSA43**
## **ORDERING INFORMATION**
|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|MPSA42G|TO−92
(Pb−Free)|5000 Units / Box|
|MPSA42RL1G|TO−92
(Pb−Free)|2000 / Tape & Reel|
|MPSA42RLRAG|TO−92
(Pb−Free)|2000 / Tape & Reel|
|MPSA42RLRMG|TO−92
(Pb−Free)|2000 / Ammo Pack|
|MPSA42RLRPG|TO−92
(Pb−Free)|2000 / Ammo Pack|
|MPSA42ZL1G|TO−92
(Pb−Free)|2000 / Ammo Pack|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
**http://onsemi.com**
**3**
**MPSA42, MPSA43**
**==> picture [484 x 170] intentionally omitted <==**
**----- Start of picture text -----**
120
VCE = 10 Vdc
100 TJ = +125°C
80
25°C
60
40
-55°C
20
0
0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
**----- End of picture text -----**
**Figure 1. DC Current Gain**
**==> picture [240 x 170] intentionally omitted <==**
**----- Start of picture text -----**
100
C eb @ 1MHz
10
1.0 Ccb @ 1MHz
0.1
0.1 1.0 10 100 1000
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 2. Capacitance**
**==> picture [484 x 171] intentionally omitted <==**
**----- Start of picture text -----**
1.4
1.2 VCE(sat) @ 25°C, IC/IB = 10
1.0 VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ -55°C, IC/IB = 10
0.8 VBE(sat) @ 25°C, IC/IB = 10
VBE(sat) @ 125°C, IC/IB = 10
0.6 VBE(sat) @ -55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
0.4 VBE(on) @ 125°C, VCE = 10 V
0.2 VBE(on) @ -55°C, VCE = 10 V
0.0
0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
**----- End of picture text -----**
**Figure 3. “ON” Voltages**
**http://onsemi.com**
**4**
## **MPSA42, MPSA43**
**==> picture [491 x 187] intentionally omitted <==**
**----- Start of picture text -----**
100 1
VCE = 2 V
TA = 25 ° C
10 ms
1.0 s
10 0.1
1 0.01
0.1 1 10 100 1 10 100 1000
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 4. Current−Gain−Bandwidth Product Figure 5. Safe Operating Area
PRODCUT (MHz)
, COLLECTOR CURRENT (A)
, CURRENT−GAIN−BANDWIDTH IC
fT
**----- End of picture text -----**
**http://onsemi.com**
**5**
**MPSA42, MPSA43**
## **PACKAGE DIMENSIONS**
**TO−92 (TO−226)** CASE 29−11 ISSUE AN
**==> picture [376 x 202] intentionally omitted <==**
**----- Start of picture text -----**
A NOTES:
B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
\ R rn 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATINGPLANE r i K — DIM MININCHESMAX MILLIMETERSMIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
> | <— e e Ssee P --- 0.100 --- 2.54
SECTION X−X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---
N STYLE 1:
ome ===== PIN 1. EMITTER
2. BASE
3. COLLECTOR
**----- End of picture text -----**
NOTES:
**==> picture [373 x 183] intentionally omitted <==**
**----- Start of picture text -----**
R L if A e B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
MILLIMETERS
SEATING
PLANE K DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
af X X D G 2.40 2.80
G KJ 12.700.39 0.50---
J N 2.04 2.66
| V ie C yy RP 1.502.93 4.00---
iw' i 4 = V 3.43 ---
SECTION X−X
1 N
oan
**----- End of picture text -----**
2. CONTROLLING DIMENSION: MILLIMETERS.
**ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
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**http://onsemi.com**
**MPSA42/D**
**6**
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