# Bipolar (BJT) Single Transistor, NPN, 100 V, 500 mA, 1.5 W, TO-92, Through Hole ![Product image](https://novapart.co/image/farnell:2825124/) **URL**: https://novapart.co/products/MPSA29/bipolar-bjt-single-transistor-npn-100-v-500-ma-15 **SKU**: MPSA29 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.1910 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 1.5W | | Dc Current Gain Hfe | 10000hFE | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transition Frequency | 200MHz | | Transistor Case Style | TO-92 | | Dc Current Gain Hfe Min | 10000hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 500mA | | Collector Emitter Voltage Max | 100V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2825124/) MPSA28, MPSA29 **MPSA29 is a Preferred Device** ## Darlington Transistors **NPN Silicon** ## **Features** **==> picture [485 x 411] intentionally omitted <==** **----- Start of picture text -----**
|||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---| |•|Pb--Free Packages are Available*|http://onsemi.com| |COLLECTOR 3| |MAXIMUM RATINGS| |BASE| |Rating|Symbol|Value|Unit| |2| |Collector--Emitter Voltage|MPSA28|VCES|80|Vdc| |MPSA29|100| |Collector--Base Voltage|MPSA28|VCBO|80|Vdc|&| |MPSA29|100|EMITTER 1| |Emitter--Base Voltage|VEBO|12|Vdc| |Collector Current|--|Continuous|IC|500|mAdc| |Total Device Dissipation @ TA = 25°C|PD|625|mW|TO--92| |Derate above 25°C|5.0|mW/°C|CASE 29| |STYLE 1| |Total Device Dissipation @ TC = 25°C|PD|1.5|W| |Derate above 25°C|12|mW/°C|1| |Operating and Storage Junction|TJ, Tstg|--55 to +150|°C|1 23|2|3| |Temperature Range|STRAIGHT LEAD|BENT LEAD| |=a| |BULK PACK|TAPE & REEL| |THERMAL CHARACTERISTICS| |AMMO PACK| |Characteristic|Symbol|Max|Unit| |Thermal Resistance, Junction--to--Ambient|R|θ|JA|200|°C/W|MARKING DIAGRAM| |Thermal Resistance, Junction--to--Case|R|θ|JC|83.3|°C/W| |——>—| |MPS| |Maximum|ratings|are|those|values|beyond|which|device|damage|can|occur.| |Maximum|ratings|applied|to|the|device|are|individual|stress|limit|values|(not|A2x| |normal operating conditions) and are not valid simultaneously. If these limits are|AYWW|G| |exceeded,|device|functional|operation|is|not|implied,|damage|may|occur|and|G| |reliability may be affected.| |x|= 8 or 9| |A|= Assembly Location| |Y|= Year| |WW|= Work Week| |G|= Pb--Free Package| |(Note: Microdot may be in either location)| **----- End of picture text -----**
> *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **==> picture [191 x 117] intentionally omitted <==** **----- Start of picture text -----**
|||| |---|---|---| |ORDERING INFORMATION| |Device|Package|Shipping| |MPSA28RLRPG|TO--92|2000/Ammo Pack| |(Pb--Free)| |MPSA29G|TO--92|5000 Units/Bulk| |(Pb--Free)| |MPSA29RLRP|TO--92|2000/Ammo Pack| |MPSA29RLRPG|TO--92|2000/Ammo Pack| |(Pb--Free)| |=2=| **----- End of picture text -----**
**Preferred** devices are recommended choices for future use and best overall value. Publication Order Number: **MPSA28/D** **1** © Semiconductor Components Industries, LLC, 2007 **April, 2007 -- Rev. 3** **MPSA28, MPSA29** ## **ELECTRICAL CHARACTERISTICS** (TA = 25°C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS** (TA= 25°C unless otherwise note|d)||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector--Emitter Breakdown Voltage
(IC= 100mAdc, VBE= 0)
MPSA28
MPSA29|V(BR)CES|80
100|--
--|--
--|Vdc| |Collector--Base Breakdown Voltage
(IC= 100mAdc, IE= 0)
MPSA28
MPSA29|V(BR)CBO|80
100|--
--|--
--|Vdc| |Emitter--Base Breakdown Voltage
(IE= 10mAdc, IC= 0)|V(BR)EBO|12|--|--|Vdc| |Collector Cutoff Current
(VCB= 60 Vdc, IE= 0)
MPSA28
(VCB= 80 Vdc, IE= 0)
MPSA29|ICBO|--
--|--
--|100
100|nAdc| |Collector Cutoff Current
(VCE= 60 Vdc, VBE= 0)
MPSA28
(VCE= 80 Vdc, VBE= 0)
MPSA29|ICES|--
--|--
--|500
500|nAdc| |Emitter Cutoff Current
(VEB= 10 Vdc, IC= 0)|IEBO|--|--|100|nAdc| |**ON CHARACTERISTICS**(Note 1)|||||| |DC Current Gain
(IC= 10 mAdc, VCE= 5.0 Vdc)
(IC= 100 mAdc, VCE= 5.0 Vdc)|hFE|10,000
10,000|--
--|--
--|--| |Collector--Emitter Saturation Voltage
(IC= 10 mAdc, IB= 0.01 mAdc)
(IC= 100 mAdc, IB= 0.1 mAdc)|VCE(sat)|--
--|0.7
0.8|1.2
1.5|Vdc| |Base--Emitter On Voltage
(IC= 100 mAdc, VCE= 5.0 Vdc)|VBE(on)|--|1.4|2.0|Vdc| |**SMALL--SIGNAL CHARACTERISTICS**|||||| |Current--Gain -- Bandwidth Product (Note 2)
(IC= 10 mAdc, VCE= 5.0 Vdc, f = 100 MHz)|fT|125|200|--|MHz| |Output Capacitance
(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)|Cobo|--|5.0|8.0|pF| 1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%. 2. fT = hfe S ftest. **http://onsemi.com** **2** **MPSA28, MPSA29** **==> picture [488 x 626] intentionally omitted <==** **----- Start of picture text -----**
VCE = 5.0 V
1.8
200 TA = 125°C VBE(S) @ IC/IB = 1.0 k
1.6
100 TA = 25°C
50 TA = 25°C 1.4
VBE(ON) @ VCE = 5.0 V
20 TA = --55°C 1.2
10
1.0
5.0
VCE(S) @ IC/IB = 1.0 k
0.8
2.0
1.0 0.6
1.0 2.0 5.0 10 20 50 100 200 500 1 k 1.0 2.0 5.0 10 20 50 100 200 500 1 k
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain Figure 2. “ON” Voltages
0 2.4
25°C to 125°C TA = 25°C
--1.0 2.0
θ VC for VCE(S) --55°C to 25°C IC = 500 mA
--2.0 1.6
--3.0 25°C to 125°C 1.2 IC = 10 mA IC = 100 mA IC = 250 mA
--55°C to 25°C
--4.0 0.8
θ VB for VBE
--5.0 0.4
1.0 2.0 5.0 10 20 50 100 200 500 0.2 1.0 2.0 10 20 100 200 1 k 1.5 k
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT ( m A)
Figure 3. Temperature Coefficients Figure 4. Collector Saturation Region
1 k 10
500 5.0
1.0 ms 100 m s VCE = 5.0 V
1.0 s TA = 25°C
200 2.0 f = 100 MHz
TA = 25°C TC = 25°C
100 1.0
50 CURRENT LIMIT 0.5
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
20 MPSA28 0.2
VALID FOR DUTY CYCLE ≤ 10%
MPSA29
10 0.1
1.0 2.0 5.0 10 20 50 100 0.3 0.5 1.0 2.0 5.0 10 20 50 100 200 300
VCE, COLLECTOR--EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (k)
C)
V, TEMPERATURE COEFFICIENT (mV/° VCE, COLLECTOR VOLTAGE (VOLTS)
θ
, COLLECTOR CURRENT (mA)
IC , HIGH FREQUENCY CURRENT GAIN
hfe
**----- End of picture text -----**
**-- Figure 5. Active Region Safe Operating Area** **Figure 6. High Frequency Current Gain** **http://onsemi.com** **3** **MPSA28, MPSA29** ## **PACKAGE DIMENSIONS** **TO--92 (TO--226)** CASE 29--11 ISSUE AM - NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. **==> picture [378 x 394] intentionally omitted <==** **----- Start of picture text -----**
A
B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
BULK PACK Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
Sil IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
I. =
C 0.125 0.165 3.18 4.19
yi__1 === D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
H J K 0.500 ------ 12.70 ------
L 0.250 ------ 6.35 ------
V C N 0.080 0.105 2.04 2.66
P ------ 0.100 ------ 2.54
SECTION X--X R 0.115 ------ 2.93 ------
1 N V 0.135 ------ 3.43 ------
N
aH ———
R A B BENT LEAD NOTES:1.1. DIMENSIONING AND TOLERANCING PER
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T E a
SEATINGPLANE K DIM MILLIMETERSMINMIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
X X D GDD 0.402.402.40 0.542.802.80
G J 0.39 0.50
J K 12.70 ------
wap N 2.04 2.66
oii V C FF RPP 1.502.932.93 4.00------------
SECTION X--X V 3.43 ------
1 N STYLE 1:
PIN 1.
a t 2. BASE
**----- End of picture text -----**
3. CONTOUR OF PACKAGE BEYOND DIMENSION R **==> picture [135 x 189] intentionally omitted <==** **----- Start of picture text -----**
NOTES:1.1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
DIM MILLIMETERSMINMIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
GDD 0.402.402.40 0.542.802.80
J 0.39 0.50
K 12.70 ------
N 2.04 2.66
RPP 1.502.932.93 4.00------------
V 3.43 ------
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
**----- End of picture text -----**
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