MPRD520T140

## **Rectifier Diode Module** 

## **Features** 

- Double Side Cooling 

- High Surge Capability 

## **Applications** 

- High Power Drives 

• High Voltage Power Supplies • Static Switches **Key Parameters Vdrm IT(AV) Itsm dV/dt* dI/dt** 1800V 860A 11500A 1000V/μs 200A/μs ~~——~~ 

*Higher dV/dt selections available 

## **Voltage Ratings** 

|**Part Number**|**Repetitive Peak Voltages**<br>**VDRM and VRRM**<br>**V**|**Conditions**|
|---|---|---|
|MPRD520T140|1800|Tvj= -40°C to +125°C,<br>Idrm = Irrm = 50mA,<br>Vdrm, Vrrm tp = 10ms,<br>Vdsm & Vrsm =<br>Vdrm & Vrrm +100V<br>respectively|



## **Current Ratings** 

Tcase = 60°C unless stated otherwise 

|**Symbol**|**Parameter**|**Test Conditions**|**Max.**|**Units**|
|---|---|---|---|---|
|**Double Side Cooled**|||||
|IT(AV)|Mean on-state current|Half wave resistive load|860|A|
|IT(RMS)|RMS value|-|1350||
|It|Continuous(direct)on-state current|-|1220||



## **Surge Ratings** 

|**Symbol**|**Parameter**|**Test Conditions**|**Max.**|**Units**|
|---|---|---|---|---|
|Itsm|Surge(non-repetitive)on-state current|10ms half sine, Tcase = 125°C<br>Vr = 0|11.5|kA|
|I²t|I²t for fusing||0.661|MA²s|



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## **Rectifier Diode Module** 

## **Thermal and Mechanical Ratings** 

|**Thermal and**|**Mechanical Ratings**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**||**Min.**|**Max.**|**Units**|
|Rth(j-c)|Thermal resistance –junction to case|Double side cooled|DC|-|0.035|°C/W|
|Rth(c-h)|Thermal resistance – case to heatsink|Double side cooled|DC|-|0.01|°C/W|
|Tvj|Virtualjunction temperature|BlockingVdrm / Vrrm||-|125|°C|
|Tstg|Storage temperature range|||-40|140|°C|
|Fm|Clampingforce|||8|12|kN|



## **Dynamic Characteristics** 

|**Dynamic**|**Characteristics**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**||**Min.**|**Max.**|**Units**|
|Irrm/Idrm|Peak reverse and of-state current|At Vrrm/Vdrm, Tcase = 125°C||-|50|mA|
|dV/dt|Max. linear rate of rise of of-state<br>voltage|To 67% Vdrm, Tj = 125°C, gate open||1000|-|V/μs|
|dI/dt|Rate of rise of on-state current|From 67% Vdrm to 1000A<br>Gate source 30V, 10Ω,<br>tr < 0.5μs, Tj = 125°C|Repetitive 50Hz|-|200|A/μs|
||||Non-repetitive|-|1000|A/μs|
|Vt|On-state voltage|It = 1500A, Tcase = 125°C||-|1.65|V|
|VT(TO)|Threshold voltage|Tcase = 125°C||-|0.90|V|
|rt|On-state slope resistance|Tcase = 125°C||-|0.50|mΩ|
|tgd|Delay time|Vd = 67% Vdrm, gate sourc<br>tr = 0.5μs, Tj= 25°C|e 30V, 10Ω|-|3.0|μs|
|tq|Turn-of time|Tj = 125°C, Vr = 100V, dI/dt = 10A/μs,<br>dVDR/dt = 20V/μs linear to 67% Vdrm||-|150|μs|
|Qs|Stored charge|It = 1000A, tp = 1000us,Tj = 125°C,<br>dI/dt =10A/μs,||-|1500|μC|
|Irr|Reverse recoverycurrent|||-|105|A|
|Il|Latchingcurrent|Tj= 25°C,||-|1|A|
|Ih|Holdingcurrent|Tj= 25°C,||-|200|mA|



## **Gate Trigger Characteristics and Ratings** 

|**Symbol**|**Parameter**|**Test Conditions**|**Max.**|**Units**|
|---|---|---|---|---|
|Vgt|Gate trigger voltage|Vdrm = 5V, Tcase = 25°C|3|V|
|Vgd|Gate non-trigger voltage|At 40% Vdrm, Tcase = 125°C|0.3|V|
|Igt|Gate trigger current|Vdrm = 5V, Tcase = 25°C|300|mA|
|Igd|Gate non-trigger current|At 40% Vdrm, Tcase = 125°C|20|mA|



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26/02/26 V1.1 

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## **Rectifier Diode Module** 

## **Curves** 

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## **Rectifier Diode Module** 

## **Diagram** 

**==> picture [303 x 283] intentionally omitted <==**

## **Part Number Table** 

## Dimensions : Millimetres 

|**rt Number Table**||
|---|---|
|**Description**|**Part Number**|
|ectifer Diode Module, 1800V, 520A, D Case Code|MPRD520T140|



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