# Bipolar (BJT) Single Transistor, NPN, 350 V, 1 A, 5 W, TO-39, Through Hole

![Product image](https://novapart.co/image/farnell:3129161/)

**URL**: https://novapart.co/products/MP001170/bipolar-bjt-single-transistor-npn-350-v-1-a-5-w-to
**SKU**: MP001170
**Manufacturer**: MULTICOMP PRO
**Price**: €0.3370
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:15MHz; Power Dissipation Pd:5W; DC Collector Current:1A; DC Current Gain hFE:40hFE; Transistor

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 5W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 15MHz |
| Transistor Case Style | TO-39 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 350V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3129161/)

## **NPN High Voltage Silicon Transistor 350Vceo, 1A Ic** 

**==> picture [26 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-39<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**||||
|---|---|---|---|
|**Description**|**Symbol**|**Value**|**Unit**|
|Collector Emitter Voltage|Vceo|350|V|
|Collector Base Voltage|Vcbo|450|V|
|Emitter Base Voltage|Vebo|7|V|
|Collector Current Continuous|Ic|1|A|
|Base Current|Ib|0.5|A|
|Power Dissipation at Ta = 25°C<br>Derate above 25°C|Pd|1<br>5.7|W<br>mW/°C|
|Power Dissipation at Tc = 25°C<br>Derate above 25°C|Pd|5<br>28.6|W<br>mW/°C|
|Operating and Storage Junction<br>Temperature Range|Tj, Tstg|-65 to +200|°C|
|**Thermal Resistance**||||
|Junction to Ambient|Rth(j-a)|175|°C/W|
|Junction to Case|Rth(j-c)|35|°C/W|



## **Electrical Characteristics: (Ta = +25°C Unless otherwise specified)** 

|**Description**|**Symbol**|**Test Conditions**|**Value**|**Unit**|
|---|---|---|---|---|
|Collector Emitter Voltage|Vceo(sus)*|Ic= 50mA, Ib= 0|>350|V|
|Collector Cut off Current|Icbo|Vcb= 360V, Ie= 0<br>Vcb= 250V, Ie= 0|<20<br>-|μA<br>μA|
||Iceo|Vce= 300V, Ib= 0<br>Vce= 200V, Ib= 0|<20<br>-|μA<br>μA|
||Icex|Vce= 450V, Vbe= 1.5V<br>Vce= 300V, Vbe= 1.5V|<500<br>-|μA<br>μA|
|Emitter-Cut off Current|Iebo|Veb= 6V, Ic= 0|<20|μA|
|DC Current Gain|*hFe|Ic= 2mA, Vce= 10V<br>Ic= 20mA, Vce= 10V|>30<br>40-160||
|Collector Emitter Saturation Voltage|*Vce(Sat)|Ic= 50mA, Ib= 4mA|<0.5|V|
|Base Emitter Saturation Voltage|*Vbe(Sat)|Ic= 50mA, Ib= 4mA|<1.3|V|



Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

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## **NPN High Voltage Silicon Transistor 350Vceo, 1A Ic** 

## **Small Signal Characteristics** 

|**Description**|**Symbol**|**Test Conditions**|**Value**|**Unit**|
|---|---|---|---|---|
|Small Signal Current Gain|hFe|Ic= 5mA, Vce= 10V, f = 1kHz|>25||
|Output Capacitance|Cob|Vcb= 10V, Ie= 0, f = 1MHz|<10|pF|
|Input Capacitance|Cib|Veb= 5V, Ic= 0, f = 1MHz|<75|pF|
|Current Gain-Bandwidth Product|ft|Ic= 10mA, Vce= 10V, f = 5MHz|>15|MHz|
|Real Part of Input Impedance|Re(hie)|Vce - 10V, Ic= 5mA, f = 1MHz|<300|Ω|



*Pulse Test: Pulse Width < 300μs, Duty Cycle ≤ 2% 

## **TO-39 Metal Can Package** 

**==> picture [52 x 39] intentionally omitted <==**

**==> picture [62 x 45] intentionally omitted <==**

|**Dim.**<br>A<br>B<br>C<br>D<br>E<br>F|**Min.**|**Max.**||**Dim.**|**Min.**|**Max.**|
|---|---|---|---|---|---|---|
||8.5|9.39||G|4.82|5.33|
||7.74|8.5||H|0.71|0.86|
||6.09|6.6||J|0.73|1.02|
||0.4|0.53||K|12.7|-|
||-|0.88||L|42 Deg.|48 Deg.|
||2.41|2.66|||||



Dimensions : Millimetres 

## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|NPN High Voltage Silicon Transistor, 350V, 1A, TO-39|MP001170|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

19/09/19 V1.0 

Page <2> 



## Links

- [View this product on Novapart](https://novapart.co/products/MP001170/bipolar-bjt-single-transistor-npn-350-v-1-a-5-w-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/2n3439/trans-npn-350v-1a-200deg-c-5w/dp/3129161)
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