# Bipolar (BJT) Single Transistor, PNP, 300 V, 100 mA, 200 mW, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:1773585/)

**URL**: https://novapart.co/products/MMSTA92-7-F/bipolar-bjt-single-transistor-pnp-300-v-100-ma-200
**SKU**: MMSTA92-7-F
**Manufacturer**: DIODES INC.
**Price**: €0.0260
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:50MHz; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:40hFE; Transistor Ca

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 50MHz |
| Transistor Case Style | SOT-323 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 100mA |
| Collector Emitter Voltage Max | 300V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1773585/)

**MMSTA92** 

**PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR** 

## **Features** 

**==> picture [511 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|•|Epitaxial Planar Die Construction|A|SOT-323|
|•|Complementary NPN Type Available (MMSTA42)|C|Dim|Min|Max|
|•|Ideal for Low Power Amplification and Switching|
|A|0.25|0.40|
|•|Lead Free/RoHS Compliant (Note 2)|B|C|
|•|"Green" Device (Notes 3 and 4)|B|1.15|1.35|
|B|E|C|2.00|2.20|
|Mechanical Data|G|D|0.65 Nominal|
|•|Case: SOT-323|H|E|0.30|0.40|
|TO|•|Case Material: Molded Plastic, "Green" Molding Compound, Note 4.  UL Flammability Classification|=|K|||M|G|1.20|1.40|
|Rating 94V-0|H|1.80|2.20|
|•|Moisture Sensitivity:  Level 1 per J-STD-020C|J|J|0.0|0.10|
|D|E|L|
|•|Terminal Connections: See Diagram|K|0.90|1.00|
|•|Terminals:  Solderable per MIL-STD-202, Method 208|C|
|L|0.25|0.40|
|•|Lead Free Plating (Matte Tin Finish annealed over|
|Alloy 42 leadframe).|M|0.10|0.18|
|•|Marking Information: See Page 3|α|0°|8°|
|•|Ordering Information: See Page 3|B|E|All Dimensions in mm|

**----- End of picture text -----**<br>


- Weight: 0.006 grams (approximate) 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

**==> picture [483 x 85] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Collector-Base Voltage|VCBO|-300|V|
|Collector-Emitter Voltage|VCEO|-300|V|
|Emitter-Base Voltage|VEBO|-5.0|V|
|Collector Current (Note 1)|IC|-100|mA|
|Power Dissipation (Note 1)|Pd|200|mW|
|Thermal Resistance, Junction to Ambient (Note 1)|RθJA|625|°C/W|
|Operating and Storage Temperature Range|Tj, TSTG|-55 to +150|°C|

**----- End of picture text -----**<br>


**Electrical Characteristics** @TA = 25°C unless otherwise specified 

~~RG~~ **Characteristic Symbol Min** ~~QS~~ **Max** ~~(OO~~ **Unit Test Condition OFF CHARACTERISTICS (Note 5)** ~~GQ~~ Collector-Base Breakdown Voltage V(BR)CBO -300 ~~QO~~ ⎯ ~~OO~~ V ~~(~~ IC = -100μA, IE = 0 ~~GQ~~ Collector-Emitter Breakdown Voltage V(BR)CEO -300 ~~QO~~ ⎯ ~~QO~~ V ~~(~~ IC = -1.0mA, IB = 0 ~~CG~~ Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ~~GG~~ ⎯ V IE = -100μA, IC = 0 ~~GQ~~ Collector Cutoff Current ICBO ⎯ ~~GO~~ -250 ~~QO~~ nA ~~(~~ VCB = -200V, IE = 0 ~~GQ~~ Collector Cutoff Current IEBO ⎯ ~~QO~~ -100 ~~CO~~ nA ~~(~~ VCE = -3.0V, IC = 0 **ON CHARACTERISTICS (Note 5)** 25 IC = -1.0mA, VCE = -10V DC Current Gain hFE 40 ⎯ ⎯ IC = -10mA, VCE = -10V 25 IC =  -30mA, VCE = -10V ~~pt~~ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.5 V IC = -20mA, IB = -2.0mA ~~GQ~~ Base-Emitter Saturation Voltage VBE(SAT) ⎯ ~~QO~~ -0.9 ~~|QO~~ V ~~(~~ IC = -20mA, IB = -2.0mA **SMALL SIGNAL CHARACTERISTICS** Output Capacitance Ccb ⎯ 6.0 pF VCB = -20V, f = 1.0MHz, IE = 0 ~~a~~ Current Gain-Bandwidth Product fT 50 ⎯ MHz Vf = 1CE = -20V, I00MHz C = -10mA, Notes: 1.  Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2.  No purposefully added lead. 3.  Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

4.  Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound.  Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 

5.  Short duration pulse test used to minimize self-heating effect. 

MMSTA92 

DS30174 Rev. 9 - 2 

1 of 3 **www.diodes.com** 

© Diodes Incorporated 

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**----- Start of picture text -----**<br>
200<br>Note 1<br>Ni e<br>150 SRed G<br>so \<br>100<br>EE IN EE<br>APT<br>50<br>TPP PT PN FI<br>0<br>0 25 50 75 100 125 150 175 200<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 1, Max Power Dissipation vs. Ambient Temperature<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br>


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10,000<br>eee HEE<br>1,000<br>AERC Err<br>=<br>a t= 1800 HTH<br>SS eer<br>100<br>gra v e THE TACHI<br>10 I NT<br>==ee ea a 5Ta Tar<br>1 Fe Fn<br>1 10 100 1,000<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 3, DC Current Gain vs. Collector Current<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.91.0 IC TO To<br>IB [= 10]<br>0.8<br>1<br>0.7<br>1 A<br>0.6<br>COCo ol<br>0.5<br>0.4<br>8 |<br>0.3 TA = 150°C<br>ono<br>0.2<br>TA = 25°C<br>IZ UI<br>0.1<br>TA = -50°C<br>0 ni iii||<br>1 10 100 1,000<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 2,  Collector Emitter Saturation Voltage vs. Collector Current<br>, COLLECTOR TO EMITTER<br>SATURATION VOLTAGE (V)<br>CE(SAT)<br>V<br>**----- End of picture text -----**<br>


**==> picture [223 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>0.9 VCE = 5V<br>0.8 TA = -50°C<br>Pr eta<br>E E<br>0.7<br>a= —| TA = 25°C La 4<br>0.6<br>ce |eel<br>0.5<br>0.4 TA = 150°C<br>ail easilll<br>0.3 ee<br>0.2 a l lll<br>0.1 a<br>0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 4, Base Emitter Voltage vs. Collector Current<br>MITTER VOLTAGE (V)<br>, BASE E<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


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100<br>VCE = 5V<br>eeee<br>PCOreee [TT] eel<br>10 TTT<br>po r—“—S<br>eeee ee ee<br>Po<br>1 ith<br>1 10<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 5, Gain Bandwidth Product vs. Collector Current<br>, GAIN BANDWIDTH PRODUCT (MHz)<br>fT<br>**----- End of picture text -----**<br>


MMSTA92 

DS30174 Rev. 9 - 2 

2 of 3 **www.diodes.com** 

© Diodes Incorporated 

**Ordering Information** (Note 4 and 6) 

|||**Device**|**Packaging**|**Shipping**|
|---|---|---|---|---|
|||MMSTA92-7-F|SOT-323|3000/Tape & Reel|
|Notes:|6.  For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.|6.  For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.|6.  For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.||



## **Marking Information** 

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**----- Start of picture text -----**<br>
K3R = Product Type Marking Code<br>YM = Date Code Marking<br>K3R Y = Year ex: N = 2002<br>M = Month ex: 9 = September<br>_<br>Date Code Key<br>Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012<br>Code J  K  L  M  N  P  R  S  T  U  V  W  X  Y  Z<br>— ee ee ee<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3  4  5  6  7  8  9  O  N  D<br>eeee ee ee<br>YM<br>**----- End of picture text -----**<br>


## IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. 

LIFE SUPPORT 

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 

MMSTA92 

DS30174 Rev. 9 - 2 

3 of 3 **www.diodes.com** 

© Diodes Incorporated 



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