# Bipolar Transistor Array, Quad PNP, 60 V, 600 mA ![Product image](https://novapart.co/image/farnell:2454039/) **URL**: https://novapart.co/products/MMPQ2907A/bipolar-transistor-array-quad-pnp-60-v-600-ma **SKU**: MMPQ2907A **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT **Price**: €0.8060 **Stock**: 25+ **Lead Time**: 78 days (indicative) ## Description Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:1W; DC Collector Current:-600mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOIC; No. o ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 16Pins | | Product Range | - | | Qualification | - | | Transistor Mounting | Surface Mount | | Transistor Polarity | Quad PNP | | Power Dissipation Npn | - | | Power Dissipation Pnp | 1W | | Transistor Case Style | SOIC | | Transition Frequency Npn | - | | Transition Frequency Pnp | 250MHz | | Operating Temperature Max | 150°C | | Dc Current Gain Hfe Min Npn | - | | Dc Current Gain Hfe Min Pnp | 50hFE | | Continuous Collector Current Npn | - | | Continuous Collector Current Pnp | 600mA | | Collector Emitter Voltage Max Npn | - | | Collector Emitter Voltage Max Pnp | 60V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2454039/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [56 x 9] intentionally omitted <==** **----- Start of picture text -----**
January 2014
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# **FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General-Purpose Amplifier** ## **Description** This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. Sourced from Process 63. ## **Block Diagram** **==> picture [89 x 59] intentionally omitted <==** **----- Start of picture text -----**
E2
B2
C1
C2
SC70-6 B1
Mark: .2F pin #1 E1
**----- End of picture text -----**
**Figure 1. FFB2907A Device Package** **==> picture [87 x 88] intentionally omitted <==** **----- Start of picture text -----**
C2
E1
C1
B2
E2
pin #1 B1
SuperSOT ™ -6
Mark: .2F
Dot denotes pin #1
**----- End of picture text -----**
**Figure 3. FMB2907A Device Package** **==> picture [118 x 81] intentionally omitted <==** **----- Start of picture text -----**
B3 [E4B4]
E3
B2
E2
B1
E1
C3 [C4C4]
SOIC-16
Mark: pin #1 C1 [C1C2C2C3]
MMPQ2907A
**----- End of picture text -----**
**==> picture [79 x 64] intentionally omitted <==** **----- Start of picture text -----**
E2 C2
B2 B1
C1 E1
**----- End of picture text -----**
**Figure 2. FFB2907A Internal Connections** **==> picture [79 x 64] intentionally omitted <==** **----- Start of picture text -----**
C2 B2
E1 E2
C1 B1
**----- End of picture text -----**
**Figure 4. FMB2907A Internal Connections** **==> picture [150 x 78] intentionally omitted <==** **----- Start of picture text -----**
E1 B2 E2 B2 E3 B3 E4 B4
C1 C1 C2 C2 C3 C3 C4 C4
**----- End of picture text -----**
**Figure 5. MMPQ2907A Device Package** **Figure 6. MMPQ2907A Internal Connections** © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 1 ## **Ordering Information** |**Part Number**|**Top Mark**|**Package**|**Packing Method**| |---|---|---|---| |FFB2907A|.2F|SC70 6L|Tape and Reel| |FMB2907A|.2F|SSOT 6L|Tape and Reel| |MMPQ2907A|MMPQ2907A|SOIC 16L|Tape and Reel| ## **Absolute Maximum Ratings**[(1),(2)] |Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA= 25°C unless otherwise noted.
**Notes:**
1. These ratings are based on a maximum junction temperature of 150°C.
**Symbol**
**Parameter**
**Value**
**Unit**
VCEO
Collector-Emitter Voltage
-60
V
VCBO
Collector-Base Voltage
-60
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current - Continuous
-600
mA
TJ, TSTG
Junction and Storage Temperature
-55 to +150
°C
~~————~~| |---| 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. ## **Thermal Characteristics**[(3)] |**Symbol**
~~i=——==s5~~|**Parameter**
~~i=——==s5~~|**Max.**
~~i=——==s5~~|**Max.**
~~i=——==s5~~|**Max.**
~~i=——==s5~~|**Unit**
~~i=——==s5~~| |---|---|---|---|---|---| |||**FFB2907A**
~~i=——==s5~~|**FMB2907A**
~~i=——==s5~~|**MMPQ2907A**
~~i=——==s5~~|| |PD
~~i=——==s5~~|Total Device Dissipation
~~i=——==s5~~|300
~~i=——==s5~~|700
~~i=——==s5~~|1,000
~~i=——==s5~~|mW
~~i=——==s5~~| ||Derate Above 25°C
~~i=——==s5~~|2.4
~~i=——==s5~~|5.6
~~i=——==s5~~|8.0
~~i=——==s5~~|mW/°C
~~i=——==s5~~| |RθJA
~~i=——==s5~~|Thermal Resistance, Junction to Ambient
~~i=——==s5~~|415
~~i=——==s5~~|180
~~i=——==s5~~|~~i=——==s5~~|°C/W
~~i=——==s5~~| ||Thermal Resistance, Junction to Ambient,
Effective 4 Die
~~i=——==s5~~|~~i=——==s5~~|~~i=——==s5~~|125
~~i=——==s5~~|| ||Thermal Resistance, Junction to Ambient,
Each Die
~~i=——==s5~~|~~i=——==s5~~|~~i=——==s5~~|240
~~i=——==s5~~|| © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 2 ## **Electrical Characteristics**[(4)] Values are at TA = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |V(BR)CEO|Collector-Emitter Breakdown
Voltage(4)|IC= -10 mA, IB= 0|-60|||V| |V(BR)CBO|Collector-Base Breakdown Voltage|IC= -10μA, IE= 0|-60|||V| |V(BR)EBO|Emitter-Base Breakdown Voltage|IE= -10μA, IC= 0|-5.0|||V| |IBL|Base Cut-Off Current|VCE= -30 V, VEB= -0.5 V|||-50|nA| |ICEX|Collector Cut-Off Current|VCE= -30 V, VEB= -0.5 V|||-50|nA| |ICBO|Collector Cut-Off Current|VCB= -50 V, IE= 0|||-0.02|μA| |||VCB= -50 V, IE= 0, TA= 125°C|||-20|| |hFE|DC Current Gain|IC= -0.1 mA, VCE= -10 V|75|||| |||IC= -1.0 mA, VCE= -10 V|100|||| |||IC= -10 mA, VCE= -10 V|100|||| |||IC= -150 mA, VCE= -10 V(4)|100||300|| |||IC= -500 mA, VCE= -10 V(4)|50|||| |VCE(sat)|Collector-Emitter Saturation
Voltage(4)|IC= -150 mA, IB= -15 mA|||-0.4|V| |||IC= -500 mA, IB= -50 mA|||-1.6|| |VBE(sat)|Base-Emitter Saturation Voltage|IC= -150 mA, IB= -15 mA(4)|||-1.3|V| |||IC= -500 mA, IB= -50 mA|||-2.6|| |fT|Current Gain-Bandwidth Product|IC= -50 mA, VCE=- 20 V,
f = 100 MHz||250||MHz| |Cob|Output Capacitance|VCB= -10 V, IE= 0, f = 100 kHz||6.0||pF| |Cib|Input Capacitance|VEB= -2.0 V, IC= 0, f = 100 kHz||12||pF| |ton|Turn-On Time|VCC= -30 V, IC= -150 mA,
IB1= -15 mA||30||ns| |td|Delay Time|||8||ns| |tr|Rise Time|||20||ns| |toff|Turn-Off Time|VCC= -6.0 V, IC= -150 mA,
IB1= IB2= -15 mA||80||ns| |ts|Storage Time|||60||ns| |tf|Fall Time|||20||ns| ## **Note:** 4. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0%. © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 3 ## **Typical Performance Characteristics** **==> picture [433 x 523] intentionally omitted <==** **----- Start of picture text -----**
500 0.5
V = 5V CE β = 10
400 Aee TT 1 0.4 CT0
TCT 125 °C CRS ee
a Ct
300 0.3
25 °C
200 PTT 25 °C CTT FTI NT 0.2 rr
CTPTL rN POI ee i Sy
ATCTTTI SSN a
100 oooICI - 40 °C Ns 0.1 a 125 °C - 40 °C
0 a CII 0 ISSCSeer TTTT
0.1 0.3 1 3 10 30 100 300 1 10 100 500
I - COLLECTOR CURRENT (mA)C I - COLLECTOR CURRENT (mA)C
Figure 7. Typical Pulsed Current Gain vs. Figure 8. Collector-Emitter Saturation Voltage vs.
Collector Current Collector Current
1 a 1 — J J
- 40 °C T_T = 0.8 a - 40 °C Se
0.8 — =F i nica TI ge ee
——.
ie 25 °C — 0.6 aSS eee ee —_ =
0.60.4 aee 125 | °C ee 0.4 | 25 °C H}_} 125 °C a4
SE β = 10 TT
0.2 aa i 0.2 eTTTeedTTGTTET V = 5VCE |
Fe CI = a
0 0
1 10 100 500 0.1 1 10 25
I - COLLECTOR CURRENT (mA)C I - COLLECTOR CURRENT (mA)C
Figure 9. Base-Emitter Saturation Voltage vs. Figure 10. Base-Emitter On Voltage vs.
Collector Current Collector Current
100 20
= V = 35VCB rs Se es 16 a>M™,
10
12
1 SSSSeee= = SH C ib
a PSA] |]
8
SSee Se ee oS i
a Co
0.1 P——_] | | | | | | 4 eo C ob
sea eees ee e s ae ICL IDSMN
0.01 a 0 TE ETT EE ETT ES
25 50 75 100 125 0.1 1 10 50
T - AMBIENT TEMPERATURE ( C)A ° REVERSE BIAS VOLTAGE (V)
BESAT
CESAT
BE(ON)
CBO
FE
h - TYPICAL PULSED CURRENT GAIN
V - COLLECTOR EMITTER VOLTAGE (V)
V - BASE EMITTER VOLTAGE (V)
V - BASE EMITTER ON VOLTAGE (V)
CAPACITANCE (pF)
I - COLLECTOR CURRENT (nA)
**----- End of picture text -----**
**Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current** **Figure 12. Input and Output Capacitance vs. Reverse Bias Voltage** **Figure 11. Collector Cut-Off Current vs. Ambient Temperature** © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 4 ## **Typical Performance Characteristics** (Continued) **==> picture [433 x 349] intentionally omitted <==** **----- Start of picture text -----**
250 500
Soo I = I = B1 B2 10I c UE ee I = I = B1 B2 10I c PULTEEE TTT
200 400
V cc = 15 V V = 1 cc 5 V
PENSE t s ee an
150 300
ECS EET cea et
100 200
TE t r t f SoHo IN t off
50 100
t d t on
0 PSEC 0 Pt RES
10 100 1000 10 100 1000
I - COLLECTOR CURRENT (mA)C I - COLLECTOR CURRENT (mA)C
Figure 13. Switching Times vs. Collector Current Figure 14. Turn-On and Turn-Off Times vs.
Collector Current
50 1
SOIC-16
20 Pt tt A 0.75 SAK SOT-6 RR
a a Pt
10 | t r = 15 V LLU Vay 0.5 PNRtT
5 Se Se pf ONS
30 ns SC70-6
= iiaaee Ey SK
= pea 0.25 mEP..~ I~. IN
2
ooo 60 ns REECE
1 Pt TH TT 0 CCE ESS
10 100 500 0 25 50 75 100 125 150
I - COLLECTOR CURRENT C (mA) TEMPERATURE ( C)°
Figure 15. Rise Time vs. Figure 16. Power Dissipation vs.
Collector and Turn-On Base Current Ambient Temperature
B1
TIME (nS) TIME (nS)
D
P - POWER DISSIPATION (W)
I - TURN 0N BASE CURRENT (mA)
**----- End of picture text -----**
**Figure 13. Switching Times vs. Collector Current** **Figure 16. Power Dissipation vs. Ambient Temperature** © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 5 ## **Typical Performance Characteristics** (f = 1.0 kHz) **==> picture [200 x 338] intentionally omitted <==** **----- Start of picture text -----**
5 es ee ee ee h oe Z|
ee
2 h re
NY Baal A
h fe
Se)
1 A
0.5 h ie
0.2 FTPe V = -10 V CE
T = 25 CA o
ARR
0.1
_ 1 _ 2 _ 5 _ 10 _ 20 _ 50
I - COLLECTOR CURRENT (mA)C
Figure 17. Common Emitter Characteristics
1.5
I = -10mAC h fe
1.4 V = -10 VCE h ie
1.3 ppa a ee h re | ee|ee
1.2 h oe
1.11 hoe Pf | eed ee
0.9 h re
PAT
0.8
h ie
0.7 | fF | | | | [ |
0.6
h fe
0.5 EEae ee ee ee ee ee
-40 -20 0 20 40 60 80 100
T - AMBIENT TEMPERATURE ( C)A o
C
A
CHAR. RELATIVE TO VALUES AT I = -10mA
CHAR. RELATIVE TO VALUES AT T = 25 C
o
**----- End of picture text -----**
**==> picture [200 x 154] intentionally omitted <==** **----- Start of picture text -----**
1.3
h re
| | J [| T ft h ie [ty
1.2 h and hre oe h fe
Ab pa hoe =A
1.1 Aa s—
1
h ie
0.9 PyeZ| I = -10mA C
h fe T = 25 CA o
hr ie | | |
0.8
-4 -8 -12 -16 -20
V - COLLECTOR VOLTAGE (V)CE
CE
CHAR. RELATIVE TO VALUES AT V = -10V
**----- End of picture text -----**
**Figure 18. Common Emitter Characteristics** **Figure 19. Common Emitter Characteristics** © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 6 ## **Physical Dimensions** **==> picture [318 x 445] intentionally omitted <==** **----- Start of picture text -----**
SC70 6L
SYMM
CL
2.00±0.20 A 0.65
0.50 MIN
Sey RY ASR
6 4 B eacae an 0 0. ae acne
PIN ONE [ | 7 1.25±0.10 | 1.90 |! |1 i}|
Kitt | | |
| | |
1 Se| 3 | | ! 1 i}
(0.25) 0.300.15 0.40 MIN
0.10 A B 1.30
0.65
LAND PATTERN RECOMMENDATION
1.30
1.00 SEE DETAIL A
0.80 | —
{| \
1.10
1 [\] He 0.80 jMe \
0.10 0.10 C
C 0.00
2.10±0.30
SEATING
PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE A) THIS PACKAGE CONFORMS TO EIAJ
PLANE SC-88, 1996.
(R0.10)
B) ALL DIMENSIONS ARE IN MILLIMETERS.
0.25 C) DIMENSIONS DO NOT INCLUDE BURRS
0.10 OR MOLD FLASH.
0.20 D) DRAWING FILENAME: MKT-MAA06AREV6
0.46 30°
nly 0.26 . 0°
DETAIL A
SCALE: 60X
**----- End of picture text -----**
## **Figure 20. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE)** _Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ _Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MAA06A.pdf ._ _For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MAA06A.pdf_ . © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 7 ## **Physical Dimensions** (Continued) **==> picture [75 x 14] intentionally omitted <==** **----- Start of picture text -----**
SSOT 6L
**----- End of picture text -----**
## **Figure 21. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE)** _Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ _Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA06A.pdf ._ _For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA06A.pdf_ . © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 8 **==> picture [399 x 495] intentionally omitted <==** **----- Start of picture text -----**
Physical Dimensions (Continued)
SO 16L NB
10.00
A
9.80
8.89
16 9
B 1.75
4.00
6.00 5.6
3.80
psy -0o000000 -
1 8
PIN ONE
INDICATOR 1.27 0.51
0.35 1.27 0.65
3 AE +4 4 +E
a po (0.30) 0.25 M C B A LAND PATTERN RECOMMENDATION N OO0 0000
1.75 MAX
1.50 SEE DETAIL A
1.25
i f 0.25 C _L 0.25
0.10 0.19
eM atataiaiarat 0.10 C
0.50
X 45°
0.25
NOTES: UNLESS OTHERWISE SPECIFIED
(R0.10)
GAGE PLANE A) THIS PACKAGE CONFORMS TO JEDEC
(R0.10) MS-012, VARIATION AC, ISSUE C.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
8° 0.36 C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
0° FLASH AND TIE BAR PROTRUSIONS
D) CONFORMS TO ASME Y14.5M-1994
Y e l O E) LANDPATTERN STANDARD: SOIC127P600X175-16AM
F) DRAWING FILE NAME: M16AREV12.
0.90 SEATING PLANE
0.50
(1.04)
DETAIL A
SCALE: 2:1
**----- End of picture text -----**
## **Figure 22. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (ACTIVE)** _Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ _Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/M1/M16A.pdf ._ _For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-M16A.pdf_ . © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 9 ## **TRADEMARKS** The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower ™ F-PFS ™ Sync-Lock™ AX-CAP[®] * FRFET[® ] ® BitSiC ™ Global Power ResourceSM PowerTrench[® ] Ss SYSTEMGENERAL ®* Build it Now ™™ GreenBridge PowerXS™ TinyBoost[®] CorePLUS ™ Green FPS ™ Programmable Active Droop ™ TinyBuck[®] CorePOWER ™ Green FPS ™ e-Series ™ QFET[®] TinyCalc _CROSSVOLT_ ™ G _max_ ™ QS ™ TinyLogic[®] CTL ™ GTO ™ Quiet Series TINYOPTO Current Transfer Logic ™ IntelliMAX ™ RapidConfigure ™ TinyPower DEUXPEED[®] ISOPLANAR ™ TinyPWM Dual Cool™ Making Small Speakers Sound Louder 2)™ TinyWire ™™ EcoSPARK[®] and Better™ Saving our world, 1mW/W/kW at a time™ TranSiC ™ EfficientMax ™ MegaBuck ™ SignalWise ™ TriFault Detect ™ ESBC ™ MICROCOUPLER ™ SmartMax ™ TRUECURRENT[®] * ® MicroFET ™ SMART START ™ u SerDes ™ ~~/~~ MicroPak ™ Solutions for Your Success ™ Fairchild[®] MicroPak2 ™ SPM[®] Fairchild SemiconductorFACT Quiet SeriesFACTFASTFastvCoreFETBenchFPS ™[®][®] ™™ ™[®] MillerDriveMotionMaxmWSaverOptoHiTOPTOLOGICOPTOPLANAR ™[®] ™[®][® ] STEALTHSuperFETSuperSOTSuperSOTSuperSOTSupreMOSSyncFET ™™™[®] ™™[®] 3-6 -8 UHCUltra FRFETUniFETVCXVisualMaxVoltagePlusXS™ "74...™[®] ™™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. ## **DISCLAIMER** FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain system whose failure to perform can be reasonably expected to life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions for use provided in the labeling, can be safety or effectiveness. reasonably expected to result in a significant injury of the user. ## **ANTI-COUNTERFEITING POLICY** Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. 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