# Bipolar Transistor Array, Quad NPN, 40 V, 500 mA, 1 W

![Product image](https://novapart.co/image/farnell:2101390/)

**URL**: https://novapart.co/products/MMPQ2222A/bipolar-transistor-array-quad-npn-40-v-500-ma-1-w
**SKU**: MMPQ2222A
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.7640
**Stock**: 10+
**Lead Time**: 82 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOIC; No. of P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 3 - 168 hours |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 16Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Quad NPN |
| Power Dissipation Npn | 1W |
| Power Dissipation Pnp | - |
| Transistor Case Style | SOIC |
| Transition Frequency Npn | 300MHz |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 100hFE |
| Dc Current Gain Hfe Min Pnp | - |
| Continuous Collector Current Npn | 500mA |
| Continuous Collector Current Pnp | - |
| Collector Emitter Voltage Max Npn | 40V |
| Collector Emitter Voltage Max Pnp | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2101390/)

## **Is Now Part of** 

**To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

**==> picture [54 x 7] intentionally omitted <==**

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October 2015<br>**----- End of picture text -----**<br>


## **FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General-Purpose Amplifier** 

## **Description** 

This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced 

**==> picture [430 x 353] intentionally omitted <==**

**----- Start of picture text -----**<br>
Block Diagram<br>E2 C2<br>E2<br>B2<br>C1 B2 B1<br>SC70-6 B1 C2 C1 E1<br>Mark: .1P pin #1 E1<br>e<br>Figure 1. FFB2222A Device Package  Figure 2. FFB2222A Internal Connection<br>C2<br>E1 C2 B2<br>C1<br>B2 E1 E2<br>¢ E2<br>pin #1 B1<br>SuperSOT ™ -6 C1 B1<br>Mark: .1P<br>Dot denotes pin #1 6<br>Figure 3. FMB2222A Device Package Figure 4. FMB2222A Internal Connection<br>E1 B1 E2 B2 E3 B3 E4 B4<br>B3 [E4B4]<br>E3<br>B2<br>E2<br>B1<br>E1<br>C3 [C4C4]<br>SOIC-16<br>Mark: pin #1 C1 [C1C2C2C3]<br>MMPQ2222A C1 C1 C2 C2 C3 C3 C4 C4<br>**----- End of picture text -----**<br>


**Figure 5. MMPQ2222A Device Package** 

**Figure 6. MMPQ2222A Internal Connection** 

© 1998 Fairchild Semiconductor Corporation FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 

www.fairchildsemi.com 

## **Ordering Information** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|FFB2222A|.1P|SC70 6L|Tape and Reel|
|FMB2222A|.1P|SSOT 6L|Tape and Reel|
|MMPQ2222A|MMPQ2222A|SOIC 16L|Tape and Reel|



## **Absolute Maximum Ratings**[(1)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. **Symbol Parameter Value Unit** VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ° C ~~——~~ **Note:** 1. These ratings are based on a maximum junction temperature of 150 ° C. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. 

**Thermal Characteristics**[(2)] Values are at TA = 25°C unless otherwise noted. **Max. Symbol Parameter Unit FFB2222A FMB2222A MMPQ2222A** Total Device Dissipation 300 700 1,000 mW PD Derate Above 25 ° C 2.4 5.6 8.0 mW/ ° C Thermal Resistance, Junction-to-Ambient 415 180 Thermal Resistance, Junction-to-Ambient, R θ JA Effective 4 Dies 125 ° C/W Thermal Resistance, Junction-to-Ambient, 240 Each Die ~~i=—==>5~~ **Note:** 2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 

© 1998 Fairchild Semiconductor Corporation FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 

www.fairchildsemi.com 

2 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CEO|Collector-Emitter Breakdown Voltage(3)I|IC= 10 mA, IB= 0|40|||V|
|V(BR)CBO|Collector-Base Breakdown Voltage|IC= 10μA, IE= 0|75|||V|
|V(BR)EBO|Emitter-Base Breakdown Voltage|IE= 10μA, IC= 0|5.0|||V|
|ICBO|Collector Cut-Off Current|VCB= 60 V, IE= 0|||10|nA|
|IEBO|Emitter Cut-Off Current|VEB= 3.0 V, IC= 0|||10|nA|
|hFE|DC Current Gain|IC= 0.1 mA, VCE= 10 V|35||||
|||IC= 1.0 mA, VCE= 10 V|50||||
|||IC= 10 mA, VCE= 10 V|75||||
|||IC= 150 mA, VCE= 10 V(3)|100||300||
|||IC= 150 mA, VCE= 1.0 V(3)|50||||
|||IC= 500 mA, VCE= 10 V(3)|40||||
|VCE(sat)|Collector-Emitter Saturation Voltage(3)|IC= 150 mA, IB= 15 mA|||0.3|V|
|||IC= 500 mA, IB= 50 mA|||1.0||
|VBE(sat)|Base-Emitter Saturation Voltage(3)|IC= 150 mA, IB= 15 mA|||1.2|V|
|||IC= 500 mA, IB= 50 mA|||2.0||
|fT|Current Gain - Bandwidth Product|IC= 20 mA, VCE= 20 V,<br>f = 100 MHz||300||MHz|
|Cobo|Output Capacitance|VCB= 10 V, IE= 0,<br>f = 100 kHz||4.0||pF|
|Cibo|Input Capacitance|VEB= 0.5 V, IC= 0,<br>f = 100 kHz||20||pF|
|NF|Noise Figure|IC= 100μA, VCE= 10 V,<br>RS= 1.0 kΩ, f = 1.0 kHz||2.0||dB|
|td|Delay Time|VCC= 30 V, VBE(OFF)= 0.5 V,<br>IC= 150 mA, IB1= 15 mA||8||ns|
|tr|Rise Time|||20||ns|
|ts|Storage Time|VCC= 30 V, IC= 150 mA,<br>IB1= IB2= 15 mA||180||ns|
|tf|Fall Time|||40||ns|



## **Note:** 

3. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0%. 

© 1998 Fairchild Semiconductor Corporation FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 

www.fairchildsemi.com 

3 

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Typical Performance Characteristics<br>500 0.4<br>V     = 5V CE<br>400 ea β = 10<br>So 0.3 EH<br>a 125 °C j<br>300 TI I ||<br>ee PT 125 °C |<br>0.2<br>200 Ns| 25 °C PT 25 °C ML|<br>100 PC ereNT 0.1 AT WZRT<br>- 40 °C<br>0 PTTRSen a PrSesser - 40 °C r<br>0.1 0.3 1 3 10 30 100 300 1 10 100 500<br>I   - COLLECTOR CURRENT  (mA)C I    - COLLECTOR CURRENT  (mA)C<br>Figure 7. Typical Pulsed Current Gain vs.  Figure 8. Collector-Emitter Saturation Voltage vs.<br>Collector Current Collector Current<br>1<br>1 β = 10 1, V      CE  = 5V TT TT<br>- 40 °C 0.8 - 40 °C<br>CI Py EME EPH =<br>0.8 nee 25 °C =a A026 ooo 25 °C<br>a 125 °C 0.6 eee 125 °C<br>0.6<br>San ee TE oe<br>a | 0.4 | |eee]<br>0.4 en —e<br>a<br>0.2<br>1 10 100 500 0.1 1 10 25<br>I    - COLLECTOR CURRENT  (mA)C I    - COLLECTOR CURRENT  (mA)C<br>Figure 9. Base-Emitter Saturation Voltage vs.  Figure 10. Base-Emitter On Voltage vs.<br>Collector Current Collector Current<br>500 a 20 f = 1 MHz<br>V     = 40V<br>100 CB a ae es<br>a 16 Bast<br>10 ees | CHT<br>12<br>1 seeeeeee== = CHINA C   te<br>PRESS EES<br>8<br>0.1 Se a<br>C ob<br>=ee ee 4 ia ee<br>25 50 75 100 125 150 0.1 1 10 100<br>T   - AMBIENT TEMPERATURE ( C)A ° REVERSE BIAS VOLTAGE (V)<br>FE CESAT<br>BESAT<br>BE(ON)<br>h    - TYPICAL PULSED CURRENT GAIN<br>V         - COLLECTOR-EMITTER VOLTAGE (V)<br>V        - BASE-EMITTER VOLTAGE (V)<br>V         - BASE-EMITTER ON VOLTAGE (V)<br>FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier<br>CAPACITANCE (pF)<br>I      - COLLECTOR CURRENT (nA)CBO<br>**----- End of picture text -----**<br>


## **Typical Performance Characteristics** 

**Figure 11. Collector Cut-Off Current vs. Ambient Temperature** 

**Figure 12. Emitter Transition and Output Capacitance vs. Reverse Bias Voltage** 

© 1998 Fairchild Semiconductor Corporation FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 

www.fairchildsemi.com 

4 

## **Typical Performance Characteristics** (Continued) 

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**----- Start of picture text -----**<br>
400 400<br>I    = I    =  B1 B2 10I c TL. I    = I    =  B1 B2 10I c TO. Lo<br>320 320<br>pa V       cc = 25 V V       cc = 25 V<br>240 PRENooo 240 eeea SS<br>160 | 160 eh t     s<br>t     off t r<br>80 PTes ST 80 esSCS t f<br>t on t d<br>pTPT RRR SE S--::—————aNET<br>0 0<br>10 100 1000 10 100 1000<br>I      - COLLECTOR CURRENT (mA)C I      - COLLECTOR CURRENT (mA)C<br>Figure 13. Turn-On and Turn-Off Times vs.                 Figure 14. Switching Time vs. Collector Current<br>Collector Current<br>8<br>1 SOIC-16 V     = 10 V T    = 25 C CE  A  o<br>= es<br>0.75 SOT-6 6<br>CPPS SSeRR00P  hoe<br>BSN ESET SSeee<br>0.5 4<br>aa eNe ttt tt<br>SC70-6  h re<br>POPP SAN LP<br>0.25 2<br>PPPS eT  h fe<br>0  h ie<br>0 pt 25 ET 50 Ey 75 | | 100 Pes 125 150 =  Ree 0 etee<br>TEMPERATURE (  C)° 0 10 20 30 40 50 60<br>I   - COLLECTOR CURRENT (mA)C<br>Figure 15. Power Dissipation vs.                                        Figure 16. Common Emitter Characteristics<br>Ambient Temperature<br>2.42 V     = 10 VI   = 10 mAC CE  oe  hre   h ie  1.251.31.2 = I   = 10 mAT    = 25 CC A  o TT  h fe<br>See AS<br>| | | | | | |  hfe  _ 1.15 en eee<br>1.6 Aed 1.1 Nopae  h ie<br>1.2 NCTC BEF Ee  hoe  1.05 -_| \| [ee] rete |<br>Ne 1 ft<br>|_| [Nerf]<br>0.8 ee 0.95 if  h re  it |<br>0.9<br>0.4 BRRSRSEEE 0.85 NS<br>a  hoe<br>es 0.8 ESSE<br>i a<br>0 0.75<br>0 20 40 60 80 100 0 5 10 15 20 25 30 35<br>T   - AMBIENT TEMPERATURE (  C)A o V    - COLLECTOR VOLTAGE (V)CE<br>C<br>o<br>A CE<br>TIME  (nS) TIME  (nS)<br>D<br>P   - POWER DISSIPATION (W)<br>CHAR. RELATIVE TO VALUES AT I  = 10mA<br>CHAR. RELATIVE TO VALUES AT T  = 25 C CHAR. RELATIVE TO VALUES AT V   = 10V<br>**----- End of picture text -----**<br>


**Figure 14. Switching Time vs. Collector Current** 

**Figure 17. Common Emitter Characteristics** 

**Figure 18. Common Emitter Characteristics** 

© 1998 Fairchild Semiconductor Corporation FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 

www.fairchildsemi.com 

5 

## **Test Circuits** 

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30 V<br>200  Ω<br>16 V<br>1.0 K Ω<br>0<br>≤ 200ns<br>500  Ω<br>rap<br>Figure 19. Saturated Turn-On Switching Time<br>- 1.5 V 6.0 V<br>1k 37  Ω<br>30 V<br>1.0 K Ω<br>0<br>≤ 200ns<br>50  Ω<br>ral<br>Figure 20. Saturated Turn-Off Switching Time<br>**----- End of picture text -----**<br>


© 1998 Fairchild Semiconductor Corporation FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 

www.fairchildsemi.com 

6 

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**----- Start of picture text -----**<br>
SYMM<br>CL<br>C 0.95 0.95<br>3.00<br>A<br>2.80<br>6 4 1.00 MIN<br>B<br>3.00<br>2.60<br>2.60<br>1.70<br>C<br>1.50<br>1 3<br>0.50<br>0.95<br>0.30<br>0.70 MIN<br>0.20 M A B<br>1.90<br>LAND PATTERN RECOMMENDATION<br>(0.30)<br>SEE DETAIL A<br>1.10 MAX<br>H<br>1.00<br>0.70<br>C<br>0.20<br>0.10 0.08<br>0.00 0.10 C NOTES: UNLESS OTHERWISE SPECIFIED<br>   A)  THIS PACKAGE CONFORMS TO JEDEC MO-193.<br>       VAR. AA, ISSUE E.<br>   B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>GAGE PLANE    C  PACKAGE LENGTH DOES NOT INCLUDE MOLD<br>FLASH,  PROTRUSIONS OR GATE BURRS. MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS SHALL<br>NOT EXCEED 0.25mm PER END. PACKAGE WIDTH<br>0.25 DOES NOT INCLUDE INTERLEAD FLASH OR<br>PROTRUSION. INTERLEAD FLASH OR<br>8°<br>PROTRUSION SHALL NOT EXCEED 0.25mm PER<br>0°<br>SIDE. PACKAGE LENGTH AND WIDTH DIMENSIONS<br>ARE DETERMINED AT DATUM H.<br>0.55    D)  DRAWING FILE NAME: MKT-MA06AREVF<br>0.35 SEATING PLANE<br>0.60 REF<br>DETAIL A<br>SCALE: 50X<br>**----- End of picture text -----**<br>


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10.00<br>A<br>9.80 8.89<br>8.89<br>16 9<br>B 1.75<br>6.00 4.00<br>3.85<br>3.80<br>7.35<br>PIN #1 1 0.51 8<br>1.27 0.31<br>(0.30) 1.27 0.65<br>0.25 C B A<br>LAND PATTERN RECOMMENDATION<br>**----- End of picture text -----**<br>


TOP VIEW 

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**----- Start of picture text -----**<br>
1.75 MAX<br>1.50 0.25 SEE DETAIL A<br>1.25<br>0.05<br>C<br>0.25<br>0.10 C 0.19<br>FRONT VIEW<br>**----- End of picture text -----**<br>


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0.50<br>������<br>0.25<br>R0.10 GAGE PLANE<br>R0.10<br>0.36<br>��<br>��<br>0.90 SEATING PLANE<br>0.50 (1.04)<br>DETAIL A<br>SCALE: 2:1<br>**----- End of picture text -----**<br>


## NOTES: 

A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AC, ISSUE C. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF  BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS D) CONFORMS TO ASME Y14.5M-2009 E) LANDPATTERN STANDARD: SOIC127P600X175-16AM F) DRAWING FILE NAME: M16AREV13. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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