# Thyristor Module, Antiparallel, 25 A, 1200 V

![Product image](https://novapart.co/image/farnell:1080119/)

**URL**: https://novapart.co/products/MMO62-12IO6/thyristor-module-antiparallel-25-a-1200-v
**SKU**: MMO62-12IO6
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCR Modules
**Price**: €22.7000
**Stock**: 10+
**Lead Time**: 113 days (indicative)

## Description

SCR Module Type:Antiparallel SCR; Peak Repetitive Off-State Voltage, Vdrm:1.2kV; Gate Trigger Current Max, Igt:100mA; Current It av:25A; On State RMS Current IT(rms):54A; Peak Non Rep Surge

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 4Pins |
| Product Range | - |
| Scr Module Type | Antiparallel SCR |
| Thyristor Mounting | Panel |
| On State Rms Current | 54A |
| Thyristor Case Style | SOT-227B |
| Average Forward Current | 25A |
| Gate Trigger Current Max | 100mA |
| Gate Trigger Voltage Max | 1.5V |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 1.2kV |
| Peak Repetitive Off State Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1080119/)

**MMO 62** 

## **AC Controller Modules** 

## **I = 54 A** RMS **V = 1200-1600 V** RRM 

|**VRSM**|**VRRM**|**Type**||
|---|---|---|---|
|**VDSM**|**VDRM**|||
|**V**|**V**|||
|**1200**|**1200**|**MMO 62-12io6**|**MMO 62-12io6**|
|**1600**|**1600**|**MMO 62-16io6**|**MMO 62-16io6**|



**==> picture [152 x 80] intentionally omitted <==**

**----- Start of picture text -----**<br>
G1  K1/A2 miniBLOC, SOT-227 B<br>G1<br>K2/A1  G2<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
K2/A1<br>G1<br>\S G2<br>K1/A2<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**|||**Maximum Ratings**|**Maximum Ratings**|
|---|---|---|---|---|---|
|**IRMS**<br>**ITRMS**<br>**ITAVM**|TC= 110 C, 50 - 400 Hz, module<br>TVJ= TVJM<br>TC= 110 C; (180 sine)|||54<br>39<br>25|A<br>A<br>A|
|**ITSM**|TVJ= 45 C;||t = 10 ms (50 Hz), sine|400|A|
||VR= 0<br>TVJ= TVJM<br>VR= 0||t = 8.3 ms (60 Hz), sine<br>t = 10 ms (50 Hz), sine<br>t = 8.3 ms (60 Hz), sine|430<br>350<br>370|A<br>A<br>A|
|**I2t**|TVJ= 45 C||t = 10 ms (50 Hz), sine|800|A2s|
||VR= 0||t = 8.3 ms (60 Hz), sine|780|A2s|
|TVJ= TVJM<br>t = 10 ms (50 Hz), sine<br>610<br>A2s<br>VR= 0<br>t = 8.3 ms (60 Hz), sine<br>570<br>A2s<br>**(di/dt)cr**<br>TVJ= TVJM<br>repetitive, IT= 150 A<br>100<br>A/ s<br>oe||||||
||f  =50 Hz, tP=200 s<br>VD= 2/3 VDRM<br>IG= 0.3 A<br>non repetitive, IT= ITAVM<br>500<br>A/ s<br>uuee|||||
|**(dv/dt)cr**<br>i|diG/dt = 0.3 A/ s<br>TVJ= TVJM;||VDR= 2/3 VDRM|1000|V/ s<br>uu|
||RGK= ; method 1 (linear voltage rise)<br>(o0)|||||
|**PGM**|TVJ= TVJM||tp=<br>30 s<br>uu|10|W|
|**PGAVM**<br>**VRGM**|IT= ITAVM||tp= 300 s<br>uu|5<br>0.5<br>10|W<br>W<br>V|
|**TVJ**||||-40...+150|C|
|**TVJM**||||150|C|
|**Tstg**||||-40...+150|C|
|**VISOL**|50/60 Hz, RMS|||2500|V~|
||IISOL1 mA<br><|||||
|**Md**|Mounting torque  (M4)|Mounting torque  (M4)<br>1.1 - 1.5 / 9 - 13|||Nm/lb.in.|
||Terminal connection torque (M4)||Terminal connection torque (M4)<br>1.1 - 1.5 / 9 - 13||Nm/lb.in.|
|**Weight**|typ.|||30|g|



## **Features** 

- G Thyristor controller for AC (circuit W1C acc. to IEC) for mains frequency 

- G International standard package miniBLOC (ISOTOP compatible) 

- G Isolation voltage 2500 V~ 

- G Planar passivated chips 

- G UL registered, E 72873 

## **Applications** 

- G Switching and control of single and three phase AC 

- G Softstart AC motor controller 

- G Solid state switches 

- G Light and temperature control 

## **Advantages** 

- G Easy to mount with two screws 

- G Space and weight savings 

- G Improved temperature and power cycling 

- G High power density 

Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 

© 2000 IXYS All rights reserved 

1 - 3 

**MMO 62** 

|**Symbol**<br>**IR,ID**<br>**VT**<br>**VT0**<br>**rT**|**Test Conditions**<br>**Characteristic Values**<br>TVJ = TVJM; VR= VRRM; VD= VDRM<br>12<br>IT<br>= 45 A; TVJ= 25 C<br>1.57<br>For power-loss calculations only<br>0.85<br>12<br>7|**Test Conditions**<br>**Characteristic Values**<br>TVJ = TVJM; VR= VRRM; VD= VDRM<br>12<br>IT<br>= 45 A; TVJ= 25 C<br>1.57<br>For power-loss calculations only<br>0.85<br>12<br>7|**Test Conditions**<br>**Characteristic Values**<br>TVJ = TVJM; VR= VRRM; VD= VDRM<br>12<br>IT<br>= 45 A; TVJ= 25 C<br>1.57<br>For power-loss calculations only<br>0.85<br>12<br>7|**Characteristic Values**<br>mA<br>V<br>V<br>m<br>:|10<br>VG<br>V|1: IGT, TVJ= 125°C<br>2: IGT, TVJ=   25°C<br>3: IGT, TVJ=  -40°C<br>ea<br>fii<br>qh|1: IGT, TVJ= 125°C<br>2: IGT, TVJ=   25°C<br>3: IGT, TVJ=  -40°C<br>ea<br>fii<br>qh|1: IGT, TVJ= 125°C<br>2: IGT, TVJ=   25°C<br>3: IGT, TVJ=  -40°C<br>ea<br>fii<br>qh|1: IGT, TVJ= 125°C<br>2: IGT, TVJ=   25°C<br>3: IGT, TVJ=  -40°C<br>ea<br>fii<br>qh|
|---|---|---|---|---|---|---|---|---|---|
|**VGT**<br>**IGT**<br>**VGD**<br>**IGD**<br>**IL**|VD= 6 V;<br>TVJ= 25 C<br>TVJ= -40 C<br>VD= 6 V;<br>TVJ= 25 C<br>TVJ= -40 C<br>TVJ= TVJM;<br>VD= 2/3 VDRM<br>TVJ= 25 C; tP= 10 s<br>IG= 0.3 A; diG/dt = 0.3 A/ s|<|1.5<br>1.6<br>100<br>150<br>0.2<br>5<br>250|V<br>V<br>mA<br>mA<br>V<br>mA<br>mA|0.1<br>1|4: PGAV= 0.5 W<br>5: PGM=    5 W<br>6: PGM=  10 W<br>IGD, TVJ= 125°C<br>**3**<br>**4**<br>**2**<br>**1**<br>**5**<br>**6**<br>Mi<br>~~aa~~<br>~~et~~||||
|||||||1<br>10<br>100<br>1000<br>mA||||
|**IH**<br>**tgd**<br>**tq**<br>**RthJC**|TVJ= 25 C; VD= 6 V; RGK=<br>TVJ= 25 C; VD= 1/2 VDRM<br>IG= 0.3 A; diG/dt = 0.3 A/ s<br>TVJ= TVJM; IT= 20 A, tP= 200 s; di/dt = -10 A/ s<br>typ.<br>VR= 100 V; dv/dt = 15 V/ s; VD= 2/3 VDRM<br>per thyristor; DC current<br>per module<br>y<br>—||100<br>2<br>150<br>0.91<br>0.455|mA<br>s<br>s<br>K/W<br>K/W|Fig. 1 Gate trigger characteristics<br>IG<br>1000<br>µs<br>tgd<br>TVJ= 25°C<br>_<br>=e|||||
|**RthCH**<br>**dS**<br>**dA**|per thyristor; DC current<br>per module<br>Creeping distance on surface<br>Creepage distance in air|typ.<br>typ.|0.1<br>0.05<br>8<br>4|K/W<br>K/W<br>mm<br>mm|100|typ.<br>Limit<br>Sr<br>=||||
|**a**|Max. allowable acceleration||50|m/s2||||||
||||||1<br>10|—s<br>Bea<br>HK<br>P=<br>sii||||
||||||10<br>100<br>1000<br>mA|||||
|||||||IG||||



Fig. 2 Gate trigger delay time 

**==> picture [100 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
  miniBLOC, SOT-227 B<br>**----- End of picture text -----**<br>


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Dim. Millimeter Inches<br>Min. Max. Min. Max.<br>A 31.50 31.88 1.240 1.255<br>B 7.80 8.20 0.307 0.323<br>C 4.09 4.29 0.161 0.169<br>D 4.09 4.29 0.161 0.169<br>)<br>i E 4.09 4.29 0.161 0.169<br>F 14.91 15.11 0.587 0.595<br>G 30.12 30.30 1.186 1.193<br>H 37.80 38.20 1.489 1.505<br>was) oo A J 11.68 12.22 0.460 0.481<br>e ne (ey K 8.92 9.60 0.351 0.378<br>L 0.76 0.84 0.030 0.033<br>M 12.60 12.85 0.496 0.506<br>N 25.15 25.42 0.990 1.001<br>Th es O 1.98 2.13 0.078 0.084<br>P 4.95 5.97 0.195 0.235<br>Q 26.54 26.90 1.045 1.059<br>c y<br>nF R 3.94 4.42 0.155 0.174<br>S 4.72 4.85 0.186 0.191<br>T 24.59 25.07 0.968 0.987<br>U -0.05 0.1 -0.002 0.004<br>ers<br>V 3.30 4.57 0.130 0.180<br>M4 screws (4x) supplied W 0.780 0.830 19.81 21.08<br>**----- End of picture text -----**<br>


© 2000 IXYS All rights reserved 

2 - 3 

**MMO 62** 

**==> picture [508 x 674] intentionally omitted <==**

**----- Start of picture text -----**<br>
80 150 400<br>70A A TTVJ C  = 85°C= 150°C A 50 Hz80 % VRRM<br>IT 125<br>oo 60 IRMS + OT) ITSM 300 Nd<br>100<br>50 eect MIT \x TVJ =45°C<br>40 75 200<br>TVJ =125°C<br>30<br>Fe / 50 HNsee<br>TVJ =150°C<br>20 100<br>TVJ = 25°C 25<br>10 PA A) oc) HR<br>0 0 0<br>0.0 peev 0.5 1.0 e) 1.5 V 2.0 «=  CCITT 0.01 0.1 1 s 10 0.001 0.01 0.1 TE s 1<br>VT t t<br>Fig. 3 Forward current versus voltage Fig. 4 Rated RMS current versus time Fig. 5 Surge overload current<br>drop per leg (360° conduction)<br>90 1000<br>VR = 0V<br>80W<br>Ptot 70 A [2] s<br>RthKA K/W I [2] t<br>60 Pt; | | dv | ALIN UK 1 ee TVJ =45°C  ldel<br>1.5<br>50 TEE 2<br>3<br>40 TOTAL NIN NE 5 TF ee ct<br>30 HEPES NESE 10 TO Ge e TVJ =150°C e<br>20<br>—| Yt | |PERNA SSS ET T<br>10<br>0 ZEEE47 | | | teEES| |SSvr 100 alii<br>0 10 20 30 40 50 A 0 25 50 75 100 125 °C 150 1 ms 10<br>IRMS TA t<br>Fig. 6 Load current capability for single AC controller; 1 x MMO62 Fig. 7 I²t versus time (per thyristor)<br>1.0 50<br>Constants for<br>K/W A<br>ZthJC calculation:<br>Z | thJC0.8 Rthi / (K/W)  ti / (s) a ee ITAVM 40 DC<br>0.076 0.0005 180° sin<br>0.138 0.019 120°<br>0.6 0.48 0.124 30  60°<br>0.238 0.45  30°<br>0.4 i Bi RS 20<br>CMe TTT ESSE<br>0.2 10<br>ST A EN<br>0.0 0 MMO62<br>eri | LTE IN UN) | EEE<br>0.001 0.01 0.1 1 s 10 0 25 50 75 100 125 150 °C<br>t TC<br>Fig. 8 Transient thermal impedance junction to case (per thyristor) Fig. 9 Maximum forward current at<br>case temperature<br>**----- End of picture text -----**<br>


© 2000 IXYS All rights reserved 

3 - 3 



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- [Supplier page](https://es.farnell.com/ixys-semiconductor/mmo62-12io6/thyristor-module-58a-1200v/dp/1080119)
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