# Thyristor, 1.5 kV, SMPD, 24 Pins

![Product image](https://novapart.co/image/farnell:3930493/)

**URL**: https://novapart.co/products/MMIX1H60N150V1/thyristor-15-kv-smpd-24-pins
**SKU**: MMIX1H60N150V1
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €46.6800
**Stock**: 25+
**Lead Time**: 232 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | To Be Advised |
| No. Of Pins | 24Pins |
| Product Range | - |
| Thyristor Mounting | Surface Mount |
| Holding Current Max | 350A |
| On State Rms Current | - |
| Thyristor Case Style | SMPD |
| Average On State Current | - |
| Gate Trigger Current Max | - |
| Gate Trigger Voltage Max | - |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | - |
| Peak Repetitive Off State Voltage | 1.5kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930493/)

Preliminary Technical Information 

## **1500V MOS Gated MMIX1H60N150V1 Thyristor A w/ Anti-Parallel Diode** 

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A<br>G<br>K<br>**----- End of picture text -----**<br>


## **(Electrically Isolated Tab)** 

|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VDM**|TJ = 25°C to 150°C|1500|V|
|**VGK**|Continuous<br>±30|±30|V|
|**VGK**|Transient<br>±40|±40|V|
|**ITSM**|TC = 25°C, 1μs<br>32.0|32.0|kA|
||TC = 25°C, 10μs<br>11.8|11.8<br>kA|kA|
|**PD**|TC = 25°C|446|W|
|**TJ**||-55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**||-55 ... +150|°C|
|**TL**|Maximum Lead Temperature for Soldering                     300                 °C||Maximum Lead Temperature for Soldering                     300                 °C|
|**TSOLD**|1.6 mm (0.062 in.) from Case for 10s                               260||°C|
|**VISOL**|50/60Hz, 1 minute|2500|V~|
|**FC**|Mounting Force<br>50..200/11..45|50..200/11..45|N/lb|
|**Weight**|8                    g|8                    g|8                    g|



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V<br>DM<br>**----- End of picture text -----**<br>


## **=   1500V** 

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  Isolated Tab<br>A<br>K<br>G<br>G  = Gate K     =  Cathode<br>**----- End of picture text -----**<br>


A  = Anode 

## **Features** 

- Silicon Chip on Direct-Copper Bond (DCB) Substrate 

- Isolated Mounting Surface 

- Anti-Parallel Diode 

- 2500V~ Electrical Isolation 

- Very High Current Capability 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|**VBR**<br>IA= 250A, VGK= 0V<br>1500                                      V|1500                                      V<br>~~—~~|1500                                      V|
|**VGK(th)**<br>IA<br>= 250μA, VAK= VGK<br>2.5                           5.0|2.5                           5.0<br>~~—_~~|2.5                           5.0<br>V|
|**VT**<br>IT<br>= 1000A, VGK= 15V<br>4.6          6.0|4.6          6.0<br>~~—~~|4.6          6.0<br>V|
|**rT**IT<br>> I**L**, VGK= 15V<br>1.2                  m|1.2                  m<br>~~—~~<br>~~—~~|1.2                  m|
|**VBO**<br>VGK= 15V<br>4.8|4.8<br>~~—~~<br>~~—~~|V|
|**ID**<br>VAK = 1500V, VGK= 0V<br>TJ= 125C|15<br>1.5   mA<br>~~_~~|15<br>A<br>1.5   mA|
|**IL**<br>400<br>**IH**<br>350|400<br>350<br>~~_~~<br>~~=~~|A<br>A|
|**IGKS**<br>VAK = 0V, VGK=30V|<br>~~—~~|200     nA|



## **Advantages** 

- High Power Density 

- Low Gate Drive Requirement 

## **Applications** 

- Capacitive Discharge Circuits 

- Ignition Circuits 

- Solid State Surge Protection 

DS100595A(6/14) 

© 2014 IXYS CORPORATION, All Rights Reserved 

**MMIX1H60N150V1** 

|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**<br>|**Typ.        Max.**<br>|**Typ.        Max.**<br>|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**<br>|**Typ.        Max.**<br>|**Typ.        Max.**<br>|
|**Ciks**<br>5120<br>**Coks**VAK= 25V, VGK= 0V, f = 1MHz<br>340<br>**Crks**<br>84<br>|5120<br>340<br>84<br> ~~:~~|pF<br>pF<br>pF<br>~~:~~|
|**Qg(on)**<br>180<br>**Qgk**IC= 60A, VGK= 15V, VAK= 600V<br>33<br>**Qga**<br>62<br>|180<br>33<br>62<br> ~~:~~|nC<br>nC<br>nC<br>~~:~~|
|**tri**<br>100<br>**td**<br>50<br>**Capacitive Discharge, TJ = 25°C**<br>IA= 2000A, VGK= 15V, RG= 1<br>VAK= 1000V, L < 20nH,Notes 2 & 3|100<br>50<br>~~-~~|ns<br>ns<br>~~-~~|
|**tri**<br>100<br>**td**<br>50<br>**Capacitive Discharge, TJ = 125°C**<br>IA= 2000A, VGK= 15V, RG= 1<br>VAK= 1000V, L < 20nH,Notes 2 & 3|100<br>50<br>~~_~~|ns<br>ns<br>~~_~~|
|**RthJC**<br>**RthCS**<br>0.05<br>**RthJA**<br>19|0.28 °C/W<br>0.05<br>19<br>~~=~~|0.28 °C/W<br>°C/W<br>°C/W<br>~~=~~|



## **Reverse Diode (FRED)** 

|(TJ = 25°C Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ = 25°C Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**VF**<br>IF= 100A, VGK= 0V, Note 1 1.8        V|1.8        V|1.8        V|
|**IRM**<br>20<br>**trr**   <br>IF= 50A, VGK= 0V,<br>-diF/dt = 200A/μs, VR= 300V|20<br> 700|A<br>ns|
||||
|**RthJC**||0.50C/W|



Notes: 

1.  Pulse test, t  300μs, duty cycle, d  2%. 

2.  It is recommended to use a gate driver capable of supplying more than 4Amps and >15V gate voltage. 

3.  Refer to fig. 9 & 10. 

**PRELIMANARY TECHNICAL INFORMATION** The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. ~~a~~ 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **MMIX1H60N150V1** 

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Fig. 1. Extended Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 125ºC<br>1200 1200<br>VGK = 20V   V GK  = 20V<br>          17V            17V<br>1000           15V 1000            13V<br>          13V            11V<br>          11V            10V<br>800           10V  800              9V<br>             8V<br>600 600<br>400 400<br>200 9V 200<br>8V 7V<br>7V 6V<br>0 0<br>0 2 4 6 8 10 12 0 2 4 6 8 10 12<br>VAK - Volts VAK - Volts<br>AmperesIA -   - AmperesIA<br>**----- End of picture text -----**<br>


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Fig. 3. Extended Output Characteristics @ TJ = - 40ºC Fig. 4. Gate Charge<br>16<br>1200 14  VAK = 600V<br>VGK = 20V  I  A = 60A<br>          17V<br>1000           15V 12  I G  = 10mA<br>          13V<br>800           12V 10<br>8<br>600<br>11V 6<br>400<br>10V 4<br>200 9V<br>2<br>8V<br>7V<br>0 Le 0<br>0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 180 200<br>VAK - Volts QG - NanoCoulombs<br>Fig. 5. Capacitance Fig. 6. Forward Voltage Drop of Intrinsic Diode<br>10,000 180<br>160<br>C iks TJ  = 25ºC<br>140<br>1,000 120 TJ = 125ºC<br>C oks 100<br>80<br>100 60<br>Crks 40<br>20<br>f = 1 MHz<br>10 = 104 0<br>0 5 10 15 20 25 30 35 40 0 0.4 0.8 1.2 1.6 2 2.4<br>VAK - VoltsAK - Volts - Volts VF - Volts<br> - Volts<br>GK<br> - AmperesIA V<br> - Amperes<br>IF<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


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VAK - VoltsAK - Volts - Volts<br>**----- End of picture text -----**<br>


© 2014 IXYS CORPORATION, All Rights Reserved 

## **MMIX1H60N150V1** 

## **Fig. 7. Maximum Transient Thermal Impedance** 

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1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


**Fig. 8. Cauer Thermal Network** R; Ro Ra 

|i       Ri (|i       Ri ()            Ci (F)|i       Ri ()            Ci (F)|
|---|---|---|
|i       Ri (<br>1    0.018327      0.024851|i       Ri ()            Ci (F)<br>1    0.018327      0.024851|)            Ci (F)<br>1    0.018327      0.024851|
|2    0.052439      0.058268|2    0.052439      0.058268|2    0.052439      0.058268|
|3    0.099100      0.208110|3    0.099100      0.208110|3    0.099100      0.208110|
|4    0.048364      4.000000|4    0.048364      4.000000|4    0.048364      4.000000|



**Fig. 9. Capacitive Discharge Circuit** 

**Fig. 10. Capacitive Discharge Waveform** 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: MMIX1_60N150V1(8A) 02-19-14 

## **MMIX1H60N150V1** 

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b<br>**----- End of picture text -----**<br>


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PIN:    1         =  Gate<br>           5-12    =  Cathode<br>           13-24  =  Anode<br>**----- End of picture text -----**<br>


© 2014 IXYS CORPORATION, All Rights Reserved 



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- [Supplier page](https://es.farnell.com/littelfuse/mmix1h60n150v1/thyristor-1-5kv-to-263ac-24/dp/3930493)
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