# Bipolar Transistor Array, Dual, Dual NPN, 160 V, 200 mA, 200 mW

![Product image](https://novapart.co/image/farnell:1773597RL/)

**URL**: https://novapart.co/products/MMDT5551-7-F/bipolar-transistor-array-dual-npn-160-v-200-ma-mw
**SKU**: MMDT5551-7-F
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.0810
**Stock**: 10+
**Lead Time**: 28 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Power Dissipation Pd:200mW; DC Collector Current:200mA; DC Current Gain hFE:80hFE; Transistor Case Style:SOT-363; No. of Pins

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual NPN |
| Power Dissipation Npn | 200mW |
| Power Dissipation Pnp | - |
| Transistor Case Style | SOT-363 |
| Transition Frequency Npn | 300MHz |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 80hFE |
| Dc Current Gain Hfe Min Pnp | - |
| Continuous Collector Current Npn | 200mA |
| Continuous Collector Current Pnp | - |
| Collector Emitter Voltage Max Npn | 160V |
| Collector Emitter Voltage Max Pnp | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1773597RL/)

Lr 

**MMDT5551** 

**DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR** 

## **Features** 

**==> picture [527 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|o|•|Epitaxial Planar Die Construction|o|A|SOT-363|aa|
|•|Complementary PNP Type Available (MMDT5401)|C2|B1|E1|Dim|Min|Max|
|•|Ideal for Medium Power Amplification and Switching|Tr|l|A|0.10|0.30|
|•|Ultra-Small Surface Mount Package|B|C|
|B|1.15|1.35|
|•|Lead Free/RoHS Compliant (Note 3)|
|•|"Green" Device (Note 4 and 5)|E2|B2|C1|“||C|2.00|2.20|
|G|D|0.65 Nominal|
|Mechanical Data|H|
|F|0.30|0.40|
|•|Case: SOT-363|K|M|H|1.80|2.20|
|•|Case Material:  Molded Plastic.  UL Flammability|J|—|0.10|
|Classification Rating 94V-0|
|•|Moisture Sensitivity:  Level 1 per J-STD-020C|A|J|THY|D|F|J|L|K|0.90|1.00|
|•|Terminals: Solderable per MIL-STD-202, Method 208|L|0.25|0.40|
|•|Lead Free Plating (Matte Tin Finish annealed over Alloy 42|SaceG|M|0.10|0.25|
|leadframe).|
|α|0°|8°|
|•|Terminal Connections: See Diagram|
|All Dimensions in mm|

**----- End of picture text -----**<br>


- Marking Information: K4N, See Page 3 

- Ordering & Date Code Information: See Page 3 

- Weight: 0.006 grams (approximate) 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

**==> picture [486 x 101] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Collector-Base Voltage|VCBO|180|V|
|Collector-Emitter Voltage|VCEO|160|V|
|Emitter-Base Voltage|VEBO|6.0|V|
|Collector Current - Continuous                                            (Note 1)|IC|200|mA|
|Power Dissipation                                                            (Note 1, 2)|Pd|200|mW|
|Thermal Resistance, Junction to Ambient                           (Note 1)|RθJA|625|°C/W|
|Operating and Storage Temperature Range|Tj, TSTG|-55 to +150|°C|

**----- End of picture text -----**<br>


- Notes: 1.   Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 

   2.   Maximum combined dissipation. 

   3.   No purposefully added lead. 

   4.   Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

   5.   Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 

MMDT5551 

DS30172 Rev. 8 - 2 

1 of 4 

© Diodes Incorporated 

**www.diodes.com** 

**Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|
|---|---|---|---|---|---|
|~~(QO~~||||||
|**Characteristic**<br>~~RD~~|**Symbol**<br>~~RD~~|**Min**<br>~~RD~~<br>~~(QO~~|**Max**<br>~~RD~~<br>~~(QO~~|**Unit**<br>~~RD~~<br>~~(QO~~|**Test Condition**<br>~~RD~~|
|**OFF CHARACTERISTICS(Note 6)**<br>~~(QO~~<br>~~|~~<br>~~IDI~~||||||
|Collector-Base Breakdown Voltage<br>~~nS~~|V(BR)CBO<br>~~nS~~<br>~~ID~~<br>~~IID~~|180<br>~~nS~~<br>~~ID~~<br>~~IIIT~~|⎯<br>~~nS~~<br>~~I~~<br>~~(I~~|V<br>~~nS~~<br>~~TS~~|IC= 100μA, IE= 0<br>~~nS~~<br>~~(~~|
|Collector-Emitter Breakdown Voltage<br>~~nS~~<br>~~I~~|V(BR)CEO<br>~~nS~~<br>~~ID~~<br>~~I~~<br>~~IID~~<br>~~UD~~|160<br>~~nS~~<br>~~ID ~~<br>~~I~~<br>~~IIIT~~<br>~~ID~~|⎯<br>~~nS~~<br> ~~I~~<br>~~I~~<br>~~(I~~<br>~~I~~|V<br>~~nS~~<br>~~I~~<br>~~TS~~|IC= 1.0mA, IB= 0<br>~~nS~~<br>~~I~~<br>~~(~~|
|Emitter-Base Breakdown Voltage<br>~~TD~~|V(BR)EBO<br>~~IID ~~<br>~~TD~~<br>~~UD~~<br>~~ee~~|6.0<br> ~~IIIT ~~<br>~~TD~~<br>~~ID~~<br>~~ee~~|⎯<br> ~~(I~~<br>~~TD~~<br>~~I~~<br>~~ee~~|V<br>~~TS~~<br>~~TD~~<br>~~es~~|IE= 10μA, IC= 0<br>~~(~~<br>~~TD~~|
|Collector Cutoff Current<br>~~TD~~<br>~~es~~|ICBO<br>~~TD~~<br>~~UD~~<br>~~es~~<br>~~ee~~<br>~~IIIS~~|⎯<br>~~TD~~<br>~~ID ~~<br>~~es~~<br>~~ee~~<br>~~IIIT~~|50<br>~~TD~~<br> ~~I~~<br>~~es~~<br>~~ee~~<br>~~(I~~|nA<br>μA<br>~~TD~~<br>~~es~~<br>~~es~~<br>~~I (OO~~|VCB= 120V, IE= 0<br>VCB= 120V, IE= 0, TA= 100°C<br>~~TD~~<br>~~es~~<br>~~(OO~~|
|Emitter Cutoff Current<br>~~I~~|IEBO<br>~~ee ~~<br>~~I~~<br>~~IIIS~~|⎯<br> ~~ee ~~<br>~~I~~<br>~~IIIT~~|50<br> ~~ee ~~<br>~~I~~<br>~~(I~~|nA<br> ~~es~~<br>~~I~~<br>~~I (OO~~|VEB= 4.0V, IC= 0<br>~~I~~<br>~~(OO~~|
|**ON CHARACTERISTICS(Note 6)**<br>~~IIIS IIIT (I I (OO~~<br>~~Ce~~||||||
|DC Current Gain<br>~~Ce~~|hFE<br>~~Ce~~<br>~~ee~~|80<br>80<br>30<br>~~Ce~~<br>~~ee~~|⎯<br>250<br>⎯<br>~~Ce~~<br>~~ee~~|⎯<br>~~Ce~~<br>~~ee~~|IC= 1.0mA, VCE= 5.0V<br>IC=  10mA, VCE= 5.0V<br>IC=  50mA, VCE= 5.0V<br>~~Ce~~|
|Collector-Emitter Saturation Voltage<br>~~es~~|VCE(SAT)<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~<br>~~es~~|0.15<br>0.20<br>~~es~~<br>~~ee~~<br>~~ee~~|V<br>~~es~~<br>~~ee~~<br>~~ee~~|IC= 10mA, IB= 1.0mA<br>IC= 50mA, IB= 5.0mA<br>~~es~~|
|Base-Emitter Saturation Voltage<br>~~ee~~|VBE(SAT)<br>~~ee ~~<br>~~ee~~|⎯<br> ~~ee ~~<br>~~ee~~<br>~~es~~|1.0<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|V<br> ~~ee~~<br>~~ee~~<br>~~ee~~|IC= 10mA, IB= 1.0mA<br>IC= 50mA, IB= 5.0mA<br>~~ee~~|
|**SMALL SIGNAL CHARACTERISTICS**<br>~~ee~~<br>~~es ee~~<br>~~IIIS~~<br>~~IIIT(OO~~<br>~~I(OO~~||||||
|Output Capacitance<br>~~I~~|Cobo<br>~~I~~<br>~~IIIS~~<br>~~UD~~|⎯<br>~~I~~<br>~~IIIT~~<br>~~ID~~|6.0<br>~~I~~<br>~~(OO~~<br>~~I~~|pF<br>~~I~~<br>~~I~~|VCB= 10V, f = 1.0MHz, IE= 0<br>~~I~~<br>~~(OO~~|
|Small Signal Current Gain<br>~~TD~~|hfe<br>~~IIIS~~<br>~~TD~~<br>~~UD~~<br>~~IID~~|50<br>~~IIIT ~~<br>~~TD~~<br>~~ID~~<br>~~IIIT~~|250<br> ~~(OO~~<br>~~TD~~<br>~~I~~<br>~~(I~~|⎯<br>~~I~~<br>~~TD~~<br>~~TS~~|VCE= 10V, IC= 1.0mA, f = 1.0kHz<br>~~(OO~~<br>~~TD~~<br>~~(~~|
|Current Gain-Bandwidth Product<br>~~TD~~<br>~~I~~|fT<br>~~TD~~<br>~~UD~~<br>~~I~~<br>~~IID~~<br>~~ee~~|100<br>~~TD~~<br>~~ID ~~<br>~~I~~<br>~~IIIT~~<br>~~ee~~|300<br>~~TD~~<br> ~~I~~<br>~~I~~<br>~~(I~~<br>~~ee~~|MHz<br>~~TD~~<br>~~I~~<br>~~TS~~|VCE= 10V, IC= 10mA, f = 100MHz<br>~~TD~~<br>~~I~~<br>~~(~~|
|Noise Figure<br>~~ee~~|NF<br>~~IID ~~<br>~~ee~~<br>~~ee~~|⎯<br> ~~IIIT ~~<br>~~ee~~<br>~~ee~~|8.0<br> ~~(I~~<br>~~ee~~<br>~~ee~~|dB<br>~~TS~~<br>~~ee~~|VCE= 5.0V, IC= 200μA,<br>RS= 1.0kΩ, f = 1.0kHz<br>~~(~~<br>~~ee~~|



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200150 Ne<br>Se \<br> Neeeee<br>TPKE<br>100<br>| | INCP<br>Ty?) ALLS<br>50<br>TP<br>0 Pi] | | LIN\ |<br>0 25 50 75 100 125 150 175 200<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 1, Max Power Dissipation vs.<br>Ambient Temperature<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br>


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0.15<br>0.14 IICB [ = 10]<br>0.13 = TLHEHEHELo<br>0.12<br>0.11 Cone T  Cone A = 150°C  Co<br>0.10 nn ay<br>0 |<br>0.09<br>0.08 aeCOI CTE| Coil<br>0.07 TA = 25°C<br>NO IZ E<br>0.06<br>SSI Ao<br>0.05 TA = -50°C<br>0.04 |Sa| PHY ALA<br>1 10 100 1,000<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 2, Collector Emitter Saturation Voltage<br>vs. Collector Current<br>, COLLECTOR TO EMITTER<br>SATURATION VOLTAGE (V)<br>CE(SAT)<br>V<br>**----- End of picture text -----**<br>


MMDT5551 

DS30172 Rev. 8 - 2 

2 of 4 

© Diodes Incorporated 

**www.diodes.com** 

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**----- Start of picture text -----**<br>
1,000 Fy ey titi t+ + 1+11ti<br>CE 0<br>ee<br>a<br>aCF tas t80°0 eel<br>— ee |<br>100<br>PSII<br>= 1-26 SSH<br>A Baal |<br>[TT ta= sore TT<br>a ee ELE<br>10<br>eea lli<br>| a QO OO OO GC<br>sO |<br>1<br>Cri oi<br>1 10 100<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 3, DC Current Gain vs.<br>Collector Current<br>1,000<br>PyVogeegy= 5V Ca 0 h<br>a<br>a<br>PT CT ET TT<br>i<br>100 en<br>a Eel<br>ee ce 0OO<br>a aOOOe|OO<br>aa<br>10<br>pT<br>a GO OD OO Oe Oe DG OOO<br>OO<br>|<br>1<br>1 10 100<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 5, Gain Bandwidth Product vs.<br>Collector Current<br>DC CURRENT GAIN<br>,<br>FE<br>h<br>GAIN BANDWIDTH PRODUCT (MHz)<br>,<br>fT<br>**----- End of picture text -----**<br>


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1.0 ;<br>Voge = 5V<br>0.9 rc<br>0.8 Ty= n-5 e0°C amlrl<br>0.7 | UU pl<br>onl eal<br>0.6 a<br>a L<br>Bs Vy<br>0.50.4 —TTPeni| | soller. |... <nali<br>[Ll= Ta = 150°C<br>0.3 ee aaill<br>0.2 LALIT LETT<br>0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 4, Base Emitter Voltage<br>vs. Collector Current<br>, BASE EMITTER VOLTAGE (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 7) 

**Device** MMDT5551-7-F 

**==> picture [218 x 22] intentionally omitted <==**

**----- Start of picture text -----**<br>
Packaging Shipping<br>SOT-363  3000/Tape & Reel<br>**----- End of picture text -----**<br>


Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
|||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|K4N|YM|K4N = Product Type Marking Code|
|YM = Date Code Marking|
|Y = Year ex: N = 2002|
|M = Month ex: 9 = September|
|y|
|Year|1998|1999|2000|2001|2002|2003|2004|2005|2006|2007|2008|2009|2010|2011|2012|
|Code|J|K|L|M|N|P|R|S|T|U|V|W|X|Y|Z|
|Month|Jan|Feb|Mar|Apr|May|Jun|Jul|Aug|Sep|Oct|Nov|Dec|
|Code|1|2|3|4|5|6|7|8|9|O|N|D|

**----- End of picture text -----**<br>


## Date Code Key 

MMDT5551 © Diodes Incorporated 

DS30172 Rev. 8 - 2 

3 of 4 **www.diodes.com** 

## IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. 

LIFE SUPPORT 

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 

MMDT5551 

DS30172 Rev. 8 - 2 

4 of 4 

© Diodes Incorporated 

**www.diodes.com** 



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---

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