# Bipolar Transistor Array, Dual PNP, 40 V, 600 mA

![Product image](https://novapart.co/image/farnell:3944343RL/)

**URL**: https://novapart.co/products/MMDT4403-7-F/bipolar-transistor-array-dual-pnp-40-v-600-ma
**SKU**: MMDT4403-7-F
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.0680
**Stock**: 10+
**Lead Time**: 56 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual PNP |
| Power Dissipation Npn | - |
| Power Dissipation Pnp | 200mW |
| Transistor Case Style | SOT-363 |
| Transition Frequency Npn | - |
| Transition Frequency Pnp | 200MHz |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | - |
| Dc Current Gain Hfe Min Pnp | 100hFE |
| Continuous Collector Current Npn | - |
| Continuous Collector Current Pnp | 600mA |
| Collector Emitter Voltage Max Npn | - |
| Collector Emitter Voltage Max Pnp | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944343RL/)

**MMDT4403** 

**DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR** 

## DIODELIES 

## **Features** 

**==> picture [528 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|g|•|Epitaxial Planar Die Construction|gg|A|sing|SOT-363|
|•|Ideal for Low Power Amplification and Switching|C2|B1|E1|Dim|Min|Max|
|•|Ultra-Small Surface Mount Package|
|•|Lead Free/RoHS Compliant  (Note 3)|B|C|A|0.10|0.30|
|B|1.15|1.35|
|•|"Green" Device (Note 4 and 5)|
|a|E2|B2|C1|i)||C|2.00|2.20|
|Mechanical Data|
|D|0.65 Nominal|
|H|
|—___—————|•|Case: SOT-363|_»|—|||F|0.30|0.40|
|•|Case Material:  Molded Plastic.  UL Flammability|K|M|H|1.80|2.20|
|Classification Rating 94V-0|
|J|—|0.10|
|• •|Moisture Sensitivity:  Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208|AO|J|D|F|Sh.|L|K|0.90|1.00|
|•|Lead Free Plating (Matte Tin Finish annealed over Alloy 42|C2|B1|E1|L|0.25|0.40|
|leadframe).|M|0.10|0.25|
|•|Terminal Connections: See Diagram|
|α|0°|8°|
|•|Marking Information: K2T – See Page 4|
|All Dimensions in mm|
|•|Ordering & Date Code Information: See Page 4|E2|B2|C1|

**----- End of picture text -----**<br>


- Ordering & Date Code Information: See Page 4 

- Weight: 0.006 grams (approximate) 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

**==> picture [486 x 99] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Collector-Base Voltage|VCBO|-40|V|
|Collector-Emitter Voltage|VCEO|-40|V|
|Emitter-Base Voltage|VEBO|-5.0|V|
|Collector Current - Continuous                                            (Note 1)|IC|-600|mA|
|Power Dissipation                                                            (Note 1, 2)|Pd|200|mW|
|Thermal Resistance, Junction to Ambient                           (Note 1)|RθJA|625|°C/W|
|Operating and Storage Temperature Range|Tj, TSTG|-55 to +150|°C|

**----- End of picture text -----**<br>


Notes: 1.   Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 

2.   Maximum combined dissipation. 

3.   No purposefully added lead. 

4.   Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

5.   Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 

DS30110 Rev. 10 - 2 

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**www.diodes.com** 

**Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 6)**<br>~~GO(QO~~||||||
|Collector-Base Breakdown Voltage<br>~~es~~<br>~~———~~|V(BR)CBO<br>~~es~~<br>~~t(D~~|-40<br>~~es~~<br>~~GO~~<br>~~t(D~~|⎯<br>~~es~~<br>~~(QO~~<br>~~(OO~~|V<br>~~es~~<br>~~(QO~~<br>~~(OO~~|IC= -100μA, IE= 0<br>~~es~~<br>~~(QO~~|
|Collector-Emitter Breakdown Voltage<br>~~es~~<br>~~I~~<br>~~———~~|V(BR)CEO<br>~~es~~<br>~~I~~<br>~~t(D~~|-40<br>~~es~~<br>~~GO ~~<br>~~I~~<br>~~t(D~~|⎯<br>~~es~~<br> ~~(QO~~<br>~~I~~<br>~~(OO~~|V<br>~~es~~<br>~~(QO~~<br>~~I~~<br>~~(OO~~|IC= -1.0mA, IB= 0<br>~~es~~<br>~~(QO~~<br>~~I~~|
|Emitter-Base Breakdown Voltage<br>~~———~~|V(BR)EBO<br>~~t(D~~|-5.0<br>~~t(D~~|⎯<br>~~(OO~~|V<br>~~(OO~~|IE= -100μA, IC= 0|
|Collector Cutoff Current<br>~~———~~|ICEX<br>~~t(D~~|⎯<br>~~t(D~~|-100<br>~~(OO~~|nA<br>~~(OO~~|VCE= -35V, VEB(OFF)= -0.4V|
|Base Cutoff Current<br>~~———~~|IBL<br>~~t(D~~|⎯<br>~~t(D~~|-100<br>~~(OO~~|nA<br>~~(OO~~|VCE= -35V, VEB(OFF)= -0.4V|
|**ON CHARACTERISTICS(Note 6)**<br>~~t(D (OO~~<br>~~———~~<br>~~|~~||||||
|DC Current Gain|hFE<br>~~ee~~|30<br>60<br>100<br>100<br>20<br>~~ee~~|⎯<br>⎯<br>⎯<br>300<br>⎯<br>~~ee~~|⎯|IC=  -100µA, VCE=  -1.0V<br>IC=  -1.0mA, VCE=  -1.0V<br>IC=  -10mA, VCE=  -1.0V<br>IC= -150mA, VCE=  -2.0V<br>IC= -500mA, VCE=  -2.0V|
|Collector-Emitter Saturation Voltage<br>~~ee~~|VCE(SAT)<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|-0.40<br>-0.75<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|IC= -150mA, IB= -15mA<br>IC= -500mA, IB= -50mA<br>~~ee~~|
|Base-Emitter Saturation Voltage<br>~~TEE~~|VBE(SAT)<br>~~ee ~~<br>~~TEE~~|-0.75<br>⎯<br> ~~ee ~~<br>~~TEE~~|-0.95<br>-1.30<br> ~~ee~~<br>~~TEE~~|V<br>~~TEE~~|IC= -150mA, IB= -15mA<br>IC= -500mA, IB= -50mA<br>~~TEE~~|
|**SMALL SIGNAL CHARACTERISTICS**<br>~~ee~~||||||
|Output Capacitance<br>~~ee~~|Ccb<br>~~ee~~|⎯<br>~~ee~~|8.5<br>~~ee~~|pF<br>~~ee~~|VCB= -10V, f = 1.0MHz, IE= 0<br>~~ee~~|
|Input Capacitance<br>~~ee~~<br>~~——————~~|Ceb<br>~~ee~~<br>~~Ss~~|⎯<br>~~ee~~<br>~~Ss~~|30<br>~~ee~~|pF<br>~~ee~~<br>~~ee~~|VEB= -0.5V, f = 1.0MHz, IC= 0<br>~~ee~~<br>~~ee~~|
|Input Impedance<br>~~ee~~<br>~~I~~<br>~~——————~~|hie<br>~~ee~~<br>~~I~~<br>~~Ss~~|1.5<br>~~ee~~<br>~~I~~<br>~~Ss~~|15<br>~~ee~~<br>~~I~~|kΩ<br>~~ee~~<br>~~I~~<br>~~ee~~|VCE= -10V, IC= -1.0mA,<br>f = 1.0kHz<br>~~ee~~<br>~~ee~~|
|Voltage Feedback Ratio<br>~~——————~~|hre<br>~~Ss~~|0.1<br>~~Ss~~|8.0|x 10<br>-4<br>~~ee~~||
|Small Signal Current Gain<br>~~——————~~|hfe<br>~~Ss~~|60<br>~~Ss~~|500|⎯<br>~~ee~~||
|Output Admittance<br>~~——————~~|hoe<br>~~Ss~~|1.0<br>~~Ss~~|100|μS<br>~~ee~~||
|Current Gain-Bandwidth Product<br>~~——————~~<br>~~a~~|fT<br>~~Ss~~|200<br>~~Ss~~|⎯|MHz<br>~~ee~~|VCE= -10V, IC= -20mA,<br>f = 100MHz<br>~~ee~~|
|**SWITCHING CHARACTERISTICS**<br>~~a~~<br>~~ee~~||||||
|Delay Time<br>~~ee~~|td<br>~~ee~~|⎯<br>~~ee~~|15<br>~~ee~~|ns<br>~~ee~~|VCC= -30V, IC= -150mA,<br>VBE(off)= -2.0V, IB1= -15mA<br>~~ee~~|
|Rise Time<br>~~ee~~|tr<br>~~ee~~|⎯<br>~~ee~~|20<br>~~ee~~|ns<br>~~ee~~||
|Storage Time<br>~~ee~~<br>~~ee~~|ts<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|225<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VCC= -30V, IC= -150mA,<br>IB1= IB2= -15mA<br>~~ee~~<br>~~ee~~|
|Fall Time<br>~~ee~~|tf<br>~~ee~~|⎯<br>~~ee~~|30<br>~~ee~~|ns<br>~~ee~~||



Notes: 6. Short duration pulse test used to minimize self-heating effect. 

**==> picture [480 x 224] intentionally omitted <==**

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250<br>0.5<br>Note 1 IC<br>IB [= 10]<br>200<br>0.4<br>I TT<br>150 0.3 TA = 25°C<br>Ban<br>100 0.2 a T A = 150°C<br>50<br>0.1<br>CT AIPA TA = 50°C<br>0 0 ay<br>0 25 50 75 100 125 150 175 200 1 10 100 i 1,000<br>TA, AMBIENT TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)<br>Fig. 1  Max Power Dissipation vs.  Fig. 2  Collector Emitter Saturation Voltage<br>Ambient Temperature vs. Collector Current<br>, POWER DISSIPATION (mW) , COLLECTOR TO EMITTER<br>D<br>P SATURATION VOLTAGE (V)<br>CE(SAT)<br>V<br>**----- End of picture text -----**<br>


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MMDT4403 

© Diodes Incorporated 

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**----- Start of picture text -----**<br>
1,000<br>1,000<br>VCE = 5V<br>0.9<br>en el SE ee HEHH<br>0.8<br>TA = -50°C bt TT a<br>0.7 ye T A  = 25°C all 100 Cs | |<br>TT T T N i<br>0.6 |<br>0.5 LT  eT Fe at<br>TA = 150°C<br>10<br>Salli Falli|Billi! oiTLoo<br>0.4<br>aati |<br>0.3 et ll e ranecne t  eee ceseeseel<br>0.2<br>0.1 1 10 100 1 a a ll<br>IC, COLLECTOR CURRENT (mA) 1 10 100 1,000<br>Fig. 3  Base-Emitter Voltage IC, COLLECTOR CURRENT (mA)<br>vs. Collector Current Fig. 4  DC Current Gain vs. Collector Current<br>1,000 30<br>VCE = 5V f = 1MHz<br>es a a | 20 ee | i!<br>ee eS se S IE Cibo<br>100<br>eee ll 10 TINETaAT<br>10<br>See OE ESE<br>5.0<br>EeePT EE ot eeIEee C o ee Cobo<br>1 ell 1.0 a<br>1 10 100 -0.1 -1.0 -10 -30<br>IC, COLLECTOR CURRENT (mA) REVERSE VOLTS (V)<br>Fig. 5  Gain Bandwidth Product vs. Collector Current Fig. 6  Typical Capacitance<br>1.6<br>1.4 IC = 10mA<br>1.2 IC = 1mA IC = 100mA IC = 300mA<br>IC = 30mA<br>1.0 UIE<br>0.8 en ipNtCEI NNELT<br>a \<br>0.6<br>OE aLN<br>0.4<br>0.2<br>eh UN, mS<br>0 a<br>SS ea eel<br>0.001 0.01 0.1 1 10 100<br>IB, BASE CURRENT (mA)<br>Fig. 7  Typical Collector Saturation Region<br>, DC CURRENT GAIN<br>FE<br>, BASE EMITTER VOLTAGE (V) h<br>BE(ON)<br>V<br>CAPACITANCE (pF)<br>, GAIN BANDWIDTH PRODUCT (MHz)<br>fT<br> COLLECTOR-EMITTER VOLTAGE (V)<br>CE,<br>V<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

**www.diodes.com** 

**Ordering Information** (Note 7) 

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**----- Start of picture text -----**<br>
Device Packaging Shipping<br>MMDT4403-7-F  SOT-363  3000/Tape & Reel<br>—————————<br>Notes:  7.  For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.<br>**----- End of picture text -----**<br>


## **Marking Information** 

K2T YM K2T = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 

|Date Code Key<br>**Year**<br>**1998**<br>**1999**<br>**2000**<br>**2001**<br>**2002**<br>**2003**<br>**2004**<br>**2005**<br>**2006**<br>**2007**<br>**Code**<br>J<br>K<br>L<br>M<br>N<br>P<br>R<br>S<br>T<br>U<br>~~tt hE ~~|Date Code Key<br>**Year**<br>**1998**<br>**1999**<br>**2000**<br>**2001**<br>**2002**<br>**2003**<br>**2004**<br>**2005**<br>**2006**<br>**2007**<br>**Code**<br>J<br>K<br>L<br>M<br>N<br>P<br>R<br>S<br>T<br>U<br>~~tt hE ~~|Date Code Key<br>**Year**<br>**1998**<br>**1999**<br>**2000**<br>**2001**<br>**2002**<br>**2003**<br>**2004**<br>**2005**<br>**2006**<br>**2007**<br>**Code**<br>J<br>K<br>L<br>M<br>N<br>P<br>R<br>S<br>T<br>U<br>~~tt hE ~~|**2008**<br>**2009**<br>**2010**<br>**2011**<br>V<br>W<br>X<br>Y<br> ~~EE I~~|**2008**<br>**2009**<br>**2010**<br>**2011**<br>V<br>W<br>X<br>Y<br> ~~EE I~~|**2012**<br>Z|
|---|---|---|---|---|---|
|**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Code**<br>1<br>2<br>3<br>~~[ff~~||**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>4<br>5<br>6<br>7<br>8|**Sep**<br>**Oct**<br>**Nov**<br>9<br>O<br>N||**Dec**<br>D|



## IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. 

LIFE SUPPORT 

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 

DS30110 Rev. 10 - 2 

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MMDT4403 

© Diodes Incorporated 

**www.diodes.com** 



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---

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