# Bipolar Transistor Array, Dual, Dual PNP, 40 V, 200 mA

![Product image](https://novapart.co/image/farnell:1773592/)

**URL**: https://novapart.co/products/MMDT3906-7-F/bipolar-transistor-array-dual-pnp-40-v-200-ma
**SKU**: MMDT3906-7-F
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.0480
**Stock**: 10+

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Power Dissipation Pd:200mW; DC Collector Current:-200mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-363; No. of Pi

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual PNP |
| Power Dissipation Npn | - |
| Power Dissipation Pnp | 200mW |
| Transistor Case Style | SOT-363 |
| Transition Frequency Npn | - |
| Transition Frequency Pnp | 250MHz |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | - |
| Dc Current Gain Hfe Min Pnp | 100hFE |
| Continuous Collector Current Npn | - |
| Continuous Collector Current Pnp | 200mA |
| Collector Emitter Voltage Max Npn | - |
| Collector Emitter Voltage Max Pnp | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1773592/)

**MMDT3906** 

**DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR** 

## DIODELICOES. 

## **Features** 

**==> picture [527 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|E|•|Epitaxial Planar Die Construction|EK|A|SOT-363|
|•|Ideal for Low Power Amplification and Switching|C2|B1|E1|Dim|Min|Max|
|•|Ultra-Small Surface Mount Package|||A|0.10|0.30|
|•|Lead Free/RoHS Compliant (Note 2)|B|C|
|B|1.15|1.35|
|•|"Green" Device (Note 3 and 4)|
|E2|B2|C1|C|2.00|2.20|
|a|di)|
|Mechanical Data|
|D|0.65 Nominal|
|H|
|•|Case: SOT-363|F|0.30|0.40|
|te|||
|•|Case Material:  Molded Plastic.  UL Flammability  Classification Rating 94V-0|K|M|H|1.80|2.20|
|J|—|0.10|
|•|Moisture Sensitivity:  Level 1 per J-STD-020C|OD|Sh.|
|•|Terminals: Solderable per MIL-STD-202, Method 208|“oon|J|D|F|L|K|0.90|1.00|
|•|Lead Free Plating (Matte Tin Finish annealed over Alloy 42|L|0.25|0.40|
|leadframe).|C2|B1|E1|M|0.10|0.25|
|•|Terminal Connections: See Diagram|
|α|0°|8°|
|•|Ordering and Date Code Information:  See Page 4|
|All Dimensions in mm|
|•|Marking Information: K3N, See Page 4|
|E2|B2|C1|

**----- End of picture text -----**<br>


- Weight: 0.006 grams (approximate) 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

**==> picture [486 x 101] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Collector-Base Voltage|VCBO|-40|V|
|Collector-Emitter Voltage|VCEO|-40|V|
|Emitter-Base Voltage|VEBO|-5.0|V|
|Collector Current - Continuous|IC|-200|mA|
|Power Dissipation                                                               (Note 1)|Pd|200|mW|
|Thermal Resistance, Junction to Ambient|RθJA|625|°C/W|
|Operating and Storage Temperature Range|Tj, TSTG|-55 to +150|°C|

**----- End of picture text -----**<br>


Notes: 1. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 

2. No purposefully added lead. 

3.    Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

4.    Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date 

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 

MMDT3906 © Diodes Incorporated 

DS30124 Rev. 11 - 2 

1 of 4 **www.diodes.com** 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedTA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 5)**||||||
|Collector-Base Breakdown Voltage|V(BR)CBO|-40|⎯|V|IC= -10μA, IE= 0|
|Collector-Emitter Breakdown Voltage|V(BR)CEO|-40|⎯|V|IC= -1.0mA, IB= 0|
|Emitter-Base Breakdown Voltage|V(BR)EBO|-5.0|⎯|V|IE= -10μA, IC= 0|
|Collector Cutoff Current|ICEX|⎯|-50|nA|VCE= -30V, VEB(OFF)= -3.0V|
|Base Cutoff Current|IBL|⎯|-50|nA|VCE= -30V, VEB(OFF)= -3.0V|
|**ON CHARACTERISTICS(Note 5)**<br>~~Pe~~||||||
|DC Current Gain<br>~~Pe~~|hFE<br>|60<br>80<br>100<br>60<br>30<br>|⎯<br>⎯<br>300<br>⎯<br>⎯<br>|⎯<br>|IC=  -100µA, VCE=  -1.0V<br>IC=  -1.0mA, VCE=  -1.0V<br>IC=  -10mA, VCE=  -1.0V<br>IC=   -50mA, VCE=  -1.0V<br>IC= -100mA, VCE=  -1.0V<br>|
|Collector-Emitter Saturation Voltage<br>~~Pea~~|VCE(SAT)<br>~~a~~|⎯<br>~~a~~|-0.25<br>-0.40<br>~~a~~|V<br>~~a~~|IC= -10mA, IB= -1.0mA<br>IC= -50mA, IB= -5.0mA<br>~~a~~|
|Base-Emitter Saturation Voltage<br>~~a~~|VBE(SAT)<br>~~a~~|-0.65<br>⎯<br>~~a~~|-0.85<br>-0.95<br>~~a~~|V<br>~~a~~|IC= -10mA, IB= -1.0mA<br>IC= -50mA, IB= -5.0mA<br>~~a~~|
|**SMALL SIGNAL CHARACTERISTICS**||||||
|Output Capacitance|Cobo|⎯|4.5|pF|VCB= -5.0V, f = 1.0MHz, IE= 0|
|Input Capacitance<br>~~——~~|Cibo<br>|⎯<br>|10<br>|pF<br>|VEB= -0.5V, f = 1.0MHz, IC= 0<br>|
|Input Impedance<br>~~——ES~~|hie<br>~~ES~~|2.0<br>~~ES~~|12<br>~~ES~~|kΩ<br>~~ES~~|VCE= 10V, IC= 1.0mA,<br>f = 1.0kHz<br>~~ES~~|
|Voltage Feedback Ratio<br>~~——ES~~|hre<br>~~ES~~|0.1<br>~~ES~~|10<br>~~ES~~|x 10<br>-4<br>~~ES~~||
|Small Signal Current Gain<br>~~——ES~~|hfe<br>~~ES~~|100<br>~~ES~~|400<br>~~ES~~|⎯<br>~~ES~~||
|Output Admittance<br>~~——ES~~|hoe<br>~~ES~~<br>~~ee~~|3.0<br>~~ES~~<br>~~ee~~|60<br>~~ES~~|μS<br>~~ES~~||
|Current Gain-Bandwidth Product<br>~~——ES~~<br>~~es~~|fT<br>~~ES~~<br>~~es~~<br>~~ee~~|250<br>~~ES~~<br>~~es~~<br>~~ee~~|⎯<br>~~ES~~<br>~~es~~|MHz<br>~~ES~~<br>~~es~~|VCE= -20V, IC= -10mA,<br>f = 100MHz<br>~~ES~~<br>~~es~~|
|Noise Figure<br>~~es~~<br>~~a~~|NF<br>~~es~~<br>~~ee~~<br>~~a~~|⎯<br>~~es~~<br>~~ee~~<br>~~a~~<br>~~ee~~|4.0<br>~~es~~<br>~~a~~<br>~~ee~~|dB<br>~~es~~<br>~~a~~<br>~~ee~~|VCE= -5.0V, IC= -100μA,<br>RS= 1.0kΩ, f = 1.0kHz<br>~~es~~<br>~~a~~|
|**SWITCHING CHARACTERISTICS**<br>~~ee~~<br>~~ee~~||||||
|Delay Time<br>~~ee~~|td<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|35<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VCC= -3.0V, IC= -10mA,<br>VBE(off)= 0.5V, IB1= -1.0mA<br>~~ee~~|
|Rise Time<br>~~ee~~|tr<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~<br>~~ee~~|35<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Storage Time<br>~~ee~~|ts<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~<br>~~ee~~|225<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~<br>~~ee~~|VCC= -3.0V, IC= -10mA,<br>IB1= IB2= -1.0mA<br>~~ee~~|
|Fall Time<br>~~ee~~|tf<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|75<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||



MMDT3906 

DS30124 Rev. 11 - 2 

2 of 4 **www.diodes.com** 

© Diodes Incorporated 

**==> picture [239 x 699] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCORPORATE D-<br>200 P Att | |<br>150 P| \ Note 4<br>TE \NEELLLL| [| |<br>100 Bae<br>\<br>P| yt INP Fd<br>50<br>\<br>et tt TRL<br>0<br>0 25 50 75 100 125 150 175 200<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 1, Max Power Dissipation vs.<br>Ambient Temperature<br>1,000 SSS SS ee<br>EE Ee EI<br>PTeeTi Pe Pit)<br>a ee |<br>OT ee |<br>ase I<br>eR<br>100<br>ee e rman RGRaiTi email<br>e rt eee ener resi<br>10 aa a ee ee |<br>| |<br>eet eet eet<br>a |<br>1 a eT a al<br>0.1 1 10 100 1,000<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 3, Typical DC Current Gain vs.<br>Collector Current<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>IC<br>IB [=] [ 10]<br>0.5<br>1 10 100<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 5, Typical Base-Emitter<br>Saturation Voltage vs. Collector Current<br>, POWER DISSIPATION (mW)<br>D<br>P<br>, DC CURRENT GAIN<br>FE<br>h<br>MITTER (V)<br>, BASE-E<br>BE(SAT) SATURATION VOLTAGE<br>V<br>**----- End of picture text -----**<br>


**==> picture [222 x 452] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 eE et tote<br>|eeCMEC| ll<br>10 aa a ll<br>pT NE<br>ai a aNSee | ||<br>lll<br>aCIEAN Baill<br>1<br>0.1 1 10 100<br>VCB, COLLECTOR-BASE VOLTAGE (V)<br>Fig. 2, Input and Output Capacitance vs.<br>Collector-Base Voltage<br>10 EEE |<br>J e SERRE<br>Is 10 7TT Th ihOo<br>ey |<br>a<br>1 a||H__{__#t_{_j{ji j<br>a<br>=F<br>0.1 a i<br>i lll<br>| |<br>=<br>el<br>0.01 a a |<br>1 10 100 1,000<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 4, Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>, INPUT CAPACITANCE (pF) , OUTPUT CAPACITANCE (pF)<br>IBO OBO<br>C C<br>, COLLECTOR-EMITTER (V)<br>CE(SAT)<br>V             SATURATION VOLTAGE<br>**----- End of picture text -----**<br>


MMDT3906 

DS30124 Rev. 11 - 2 

3 of 4 **www.diodes.com** 

© Diodes Incorporated 

**Ordering Information** (Note 6) 

**Device Packaging Shipping** MMDT3906-7-F SOT-363 3000/Tape & Reel ~~—————————~~ Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 

## **Marking Information** 

K3N = Product Type Marking Code K3N YM YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 

Date Code Key **Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code** J K L M N P R S T U V W X Y Z ~~/ tt EE EE EEE~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~[ft~~ 

## IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. 

LIFE SUPPORT 

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 

MMDT3906 

DS30124 Rev. 11 - 2 

4 of 4 **www.diodes.com** 

© Diodes Incorporated 



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