# Bipolar Transistor Array, Dual PNP, 60 V, 600 mA

![Product image](https://novapart.co/image/farnell:3944340/)

**URL**: https://novapart.co/products/MMDT2907V-7/bipolar-transistor-array-dual-pnp-60-v-600-ma
**SKU**: MMDT2907V-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.0640
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual PNP |
| Power Dissipation Npn | - |
| Power Dissipation Pnp | 150mW |
| Transistor Case Style | SOT-563 |
| Transition Frequency Npn | - |
| Transition Frequency Pnp | 200MHz |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | - |
| Dc Current Gain Hfe Min Pnp | 100hFE |
| Continuous Collector Current Npn | - |
| Continuous Collector Current Pnp | 600mA |
| Collector Emitter Voltage Max Npn | - |
| Collector Emitter Voltage Max Pnp | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944340/)

**MMDT2907V 60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT-563** 

## **Features** 

## **Mechanical Data** 

- BVceo > -60V 

- IC = -600mA Collector Current 

- Ultra-Small Surface Mount Package 

- Complementary NPN Type:  MMDT2222V 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- Case: SOT-563 

- Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish — Matte Tin Plated Leads Solderable per MIL-STD-202, Method 208 

- Weight: 0.003 grams (Approximate) 

**==> picture [343 x 94] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT-563<br>C1 B2 E2<br>E1 B1 C2<br>ee i<br>Top View  Bottom View  Device Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Part Number**|**Status**|**Compliance**|**Marking**|**Reel Size (inches)**|**Tape Width (mm)**|**Quantity per reel**|
|---|---|---|---|---|---|---|
|MMDT2907V-7|Active|AEC-Q101|KAU|7|8mm|3,000|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
      SOT-563<br>KAU = Product Type Marking Code<br>KAU YM YM = Date Code Marking<br>Y = Year (ex: R = 2004)<br>M = Month (ex: 9 = September)<br>**----- End of picture text -----**<br>


Date Code Key **Year 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025** ~~E>~~ **Code** B C D E F G H I J K L M **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 6 7 8 9 O N D 

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MMDT2907V Document number: DS37718 Rev. 5 - 2 

November 2015 © Diodes Incorporated 

**MMDT2907V** 

**Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-60|V|
|Collector-Emitter Voltage|VCEO|-60|V|
|Emitter-Base Voltage|VEBO|-5|V|
|CollectorCurrent|IC|-600|mA|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|Total Power Dissipation(Note 5)|PD|150|mW|
|Thermal Resistance,Junction to Ambient(Note 5)|RJA|833|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 6) 

|**ESD Ratingsgss **(Note 6)|**ESD Ratingsgss **(Note 6)|**ESD Ratingsgss **(Note 6)|**ESD Ratingsgss **(Note 6)|**ESD Ratingsgss **(Note 6)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human Body Model|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

## **Thermal Characteristics and Derating Information** 

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200<br>Tet<br>150<br>ET NEELTt yf I<br>100<br>SReENEE<br>ttt<br>50 ft tLLITAEK LSEI<br>0 se<br>eT LIN<br>-50 0 50 100 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 1 Power Dissipation<br>vs. Ambient Temperature (Note 3)<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br>


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MMDT2907V Document number: DS37718 Rev. 5 - 2 

November 2015 © Diodes Incorporated 

**MMDT2907V** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**||||||
|Collector-BaseBreakdown Voltage<br>~~ee~~|BVCBO<br>~~ee~~|-60<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|IC= -10µA,IE= 0<br>~~ee~~|
|Collector-Emitter Breakdown Voltage(Note 7)<br>~~ee~~|BVCEO<br>~~ee~~|-60<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|IC= -10mA,IB= 0<br>~~ee~~|
|Emitter-BaseBreakdown Voltage<br>~~ee~~|BVEBO<br>~~ee~~|-5<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|IE= -10µA,IC= 0<br>~~ee~~|
|Collector Cut-Off Current<br>~~—~~|ICBO<br>~~—~~|<br>~~—~~|-10<br>~~—~~|nA<br>µA<br>~~—~~|VCB= -50V, IE= 0<br>VCB= -50V,IE= 0,TA= +125°C<br>~~—~~|
|Collector Cut-Off Current<br>~~oh~~|ICEX<br>~~oh~~|<br>~~oh~~|-50<br>~~oh~~|nA<br>~~oh~~|VCE= -30V,VEB(OFF)= -0.5V<br>~~oh~~|
|Base Cut-OffCurrent<br>~~oh~~|IBL<br>~~oh~~|<br>~~oh~~|-50<br>~~oh~~|nA<br>~~oh~~|VCE= -30V,VEB(OFF)= -0.5V<br>~~oh~~|
|EB(OFF)<br>**ON CHARACTERISTICS**<br>~~oh~~||||||
|DC Current Gain ( Note 7)|hFE|75<br>100<br>100<br>100<br>50|<br><br><br>300<br>||IC=  -100µA, VCE=  -10V<br>IC=  -1.0mA, VCE=  -10V<br>IC=  -10mA, VCE=  -10V<br>IC= -150mA, VCE=  -10V<br>IC= -500mA,VCE=  -10V|
|Collector-Emitter Saturation Voltage ( Note 7)<br>~~TS~~|VCE(SAT)<br>~~TS~~|<br>~~TS~~|-0.4<br>-1.6<br>~~TS~~|V<br>~~TS~~|IC= -150mA, IB= -15mA<br>IC= -500mA,IB= -50mA<br>~~TS~~|
|Base-Emitter Saturation Voltage ( Note 7)<br>~~OO~~|VBE(SAT)<br>~~OO~~|<br>~~OO~~|-1.3<br>-2.6<br>~~OO~~|V<br>~~OO~~|IC= -150mA, IB= -15mA<br>IC= -500mA,IB= -50mA<br>~~OO~~|
|**SMALL SIGNAL CHARACTERISTICS**<br>~~es~~||||||
|Output Capacitance<br>~~es~~|Cobo<br>~~es~~|<br>~~es~~|8.0<br>~~es~~|pF<br>~~es~~|VCB= -10V,f = 1MHz,IE= 0<br>~~es~~|
|Input Capacitance<br>~~es~~|Cibo<br>~~es~~|—<br>~~es~~|30<br>~~es~~|pF<br>~~es~~|VEB= -2V,f = 1MHz,IC= 0<br>~~es~~|
|Current Gain-Bandwidth Product<br>~~es~~<br>~~OA~~|fT<br>~~es~~<br>~~OA~~|200<br>~~es~~<br>~~OA~~|<br>~~es~~<br>~~OA~~|MHz<br>~~es~~<br>~~OA~~|VCE= -20V, IC= -50mA,<br>f = 100MHz<br>~~es~~<br>~~OA~~|
|**SWITCHING CHARACTERISTICS**||||||
|Turn-On Time<br>~~|~~|toff||45|ns|VCC= -30V, IC= -150mA,<br>IB1= -15mA<br>~~ee~~|
|DelayTime|td||10|ns||
|RiseTime|tr||40|ns||
|Turn-Off Time<br>~~es~~|toff<br>~~es~~|<br>~~es~~|100<br>~~es~~|ns<br>~~es~~|VCC= -6V, IC= -150mA,<br>IB1= IB2= -15mA<br>~~es~~<br>~~ee~~|
|StorageTime<br>~~es~~|ts<br>~~es~~|<br>~~es~~|80<br>~~es~~|ns<br>~~es~~||
|Fall Time<br>~~es~~|tf<br>~~es~~|<br>~~es~~|30<br>~~es~~|ns<br>~~es~~||



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MMDT2907V Document number: DS37718 Rev. 5 - 2 

November 2015 © Diodes Incorporated 

**MMDT2907V** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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1,000 -0.6<br>VCE = -5V IICB  = 10<br>-0.5<br>TA = 150°C<br>-0.4<br>100 Cr ee tH a a<br>TA = 25°C -0.3<br>TA = -50°C TA = 150°C<br>-0.2 TA = 25°C<br>10<br>-0.1 TA = -50°C<br>1 ll 0 nil |<br>-1 -10 -100 -1,000 -1 -10 -100 -1,000<br>IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage IC, COLLECTOR CURRENT (mA)<br>Fig. 2 Typical DC Current Gain vs. Collector Current vs. Collector Current<br>-1.0 35<br>VCE = -5V<br>-0.9 ee | 30 TTT<br>-0.8 ST 25 NCTA<br>-0.7 TA = -50°C<br>20<br>-0.6 nn ey aa NOTE<br>aanOED TA = 25°C e al 15 VENTE C ibo TTT<br>-0.5<br>TT CL 10 AE rrr<br>-0.4 TA = 150°C Cobo<br>-0.3 Hert H I 5 ELE<br>TT et<br>-0.2 at te 0 CACCYL<br>-0.1 -1 -10 -100 0 2 4 6 8 10 12 14 16 18 20<br>IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTS (V)<br>Fig. 4 Typical Base-Emitter Turn-On Voltage Fig. 5 Typical Capacitance Characteristics<br>vs. Collector Current<br>1,000 -1.6<br>VCE = -5V<br>-1.4 IC = -10mA IC = -300mA<br>IC = -100mA<br>-1.2 IC = -1mA IC = -30mA<br>100 eaeee | -1.0 ‘wrth ACTA<br>-0.8<br>-0.6<br>10<br>LI -0.4 BH<br>-0.2<br>ete A<br>1 0 Call<br>-1 OIE -10 [oo] -100 -0.001 0) -0.01 NL -0.1 -1 -10 -100<br>IC, COLLECTOR CURRENT (mA) IB [,]  BASE CURRENT (mA)<br>Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current Fig. 7 Typical Collector Saturation Region<br>, COLLECTOR-EMITTER<br>CE(SAT) SATURATION VOLTAGE (V)<br>V<br>, GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br>, DC CURRENT GAIN<br>FE<br>h<br>CAPACITANCE (pF)<br>, BASE-EMITTER TURN-ON  VOLTAGE (V)<br>BE(ON)<br>V<br>, COLLECTOR-EMITTER VOLTAGE (V)<br>V<br>CE<br>**----- End of picture text -----**<br>


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MMDT2907V Document number: DS37718 Rev. 5 - 2 

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**MMDT2907V** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**==> picture [331 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|A|
|4|
|SOT- 563|
|17|]|Dim|Min|Max|Typ|
|B|C|A|0.15|0.30|0.20|
|B|1.10|1.25|1.20|
|C|1.55|1.70|1.60|
|D|D|-|-|0.50|
|G|G|0.90|1.10|1.00|
|H|1.50|1.70|1.60|
|K|0.55|0.60|0.60|
|L|0.10|0.30|0.20|
|K|M|M|0.10|0.18|0.11|
|All Dimensions in mm|
|H|
|tbe|of|L|||

**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**==> picture [123 x 112] intentionally omitted <==**

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C2 C2<br>Kae<br>i G te C1<br>Z<br>Y<br>Pooot<br>X<br>Ik ><br>**----- End of picture text -----**<br>


**==> picture [106 x 67] intentionally omitted <==**

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Dimensions Value (in mm)<br>Z  2.2<br>G  1.2<br>X  0.375<br>Y  0.5<br>C1  1.7<br>C2  0.5<br>**----- End of picture text -----**<br>


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MMDT2907V Document number: DS37718 Rev. 5 - 2 

November 2015 © Diodes Incorporated 

**MMDT2907V** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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MMDT2907V Document number: DS37718 Rev. 5 - 2 

November 2015 © Diodes Incorporated 



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---

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