MMDL914T3G

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## High-Speed Switching Diode 

## MMDL914 

## **SOD−323 CASE 477 STYLE 1** 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

|**MAXIMUM RATINGS**<br>~~ee~~|~~ee~~|~~ee~~||
|---|---|---|---|
|**Rating**<br>~~ee~~|**Symbol**<br>~~ee~~|**Value**<br>~~ee~~|**Unit**|
|Reverse Voltage<br>~~ee ~~<br>~~ee~~<br>~~i~~|VR<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~Ge~~|100<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|Forward Current<br>~~ee~~<br>~~i~~|IF<br>~~ee~~<br>~~ee~~<br>~~Ge~~|200<br>~~ee~~<br>~~ee~~<br>~~ee~~|mA<br>~~ee~~|
|Non−Repetitive Peak Forward Surge<br>Current 60 Hz<br>~~i~~|IFSM(surge)<br>~~Ge ~~|1.8<br> ~~ee~~|A|
|Repetitive Peak Forward Current<br>(Note 2)|IFRM|1.0|A|
|Non−Repetitive Peak Forward Current<br>(Square Wave, TJ= 25C prior to<br>surge)<br>t = 1 s<br>t = 10 s<br>t = 100 s<br>t = 1 ms<br>t = 10 ms<br>t = 100 ms<br>t = 1 s|IFSM|36.0<br>18.0<br>6.0<br>3.0<br>1.8<br>1.3<br>1.0|A|



## **THERMAL CHARACTERISTICS** 

~~a~~ **Characteristic Symbol Max Unit** Total Device Dissipation FR-5 Board PD 200 mW TA = 25C (Note 1) Derate above 25C 1.57 mW/C ~~ae~~ Thermal Resistance, R JA C/W Junction−to−Ambient 635 ~~ee es~~ Junction and Storage Temperature TJ, T ~~es~~ stg ~~ee~~ −55 to 150 ~~ee~~ C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

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1 2<br>CATHODE ANODE<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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5D M<br>**----- End of picture text -----**<br>


5D = Specific Device Code M = Date Code = Pb−Free Package 

(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MMDL914T1G|SOD−323<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|SMMDL914T1G|SOD−323<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|MMDL914T3G|SOD−323<br>(Pb−Free)|10,000 /<br>Tape & Reel|



   - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, ~~a~~ BRD8011/D. 

1. FR-4 Minimum Pad. 

2. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, TJ = 25C prior to surge. 

Publication Order Number: 

**1** 

 Semiconductor Components Industries, LLC, 2013 **January, 2025 − Rev. 11** 

**MMDL914T1/D** 

**MMDL914** 

**ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) 

**Characteristic Symbol Min Max Unit** ~~a~~ **OFF CHARACTERISTICS** Reverse Breakdown Voltage V(BR) Vdc (IR = 100 Adc) 100 − ~~eeee ee~~ Reverse Voltage Leakage Current IR (VR = 20 Vdc) − 25 nAdc (VR = 75 Vdc) − 5.0 Adc ~~a~~ Diode Capacitance CT pF (VR = 0 V, f = 1.0 MHz) − 4.0 ~~eeee ee~~ Forward Voltage VF Vdc (IF = 10 mAdc) − 1.0 ~~eeee ee~~ Reverse Recovery Time trr ns (IF = IR = 10 mAdc) (Figure 1) − 4.0 ~~eeee ee~~ 

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820 Q<br>IF<br>+10 V 2.0 k 0.1 F PR tr t p t<br>100 H ; IF ) + 10% t rr t<br>0.1 F u 7<br>D.U.T. 90%<br>50  OUTPUT 50  INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k Q variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

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**MMDL914** 

## **TYPICAL CHARACTERISTICS** 

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100 10<br>TA = 150  C<br>a es ee ee ee 0 4 eee ee eee eee a ee eee rees<br>TA = 85  C TA = 125  C<br>1.0<br>-—| — Aff —— ee e e<br>10 Se EE ———<br>TA  C TA = 85  C<br>esoYa ee 2TALS2 ee ee ee e e 0.1 a—>S>==>>===>>======ee==eeS=>S= S S<br>1.0 | A AS T A A = 25  C _———  _ _ TA eo  = 55  C<br>See ee ee o e 0.01 a a<br>aA)ee ee ee ee ee TA = 25  C ee es ee<br>0.1 Yr | Zi A A [f/fA[| ft | ft ft | 0.001 ——_—————a ee a<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 2. Forward Voltage Figure 3. Leakage Current<br>0.68 40<br>Based on square wave currents<br>Pott 35 meni QU UH TJ = 25C prior to surge |<br>0.64 P| te 30 oo<br>P| | | Et 25 TINT ATT |<br>0.60 VfAta ft ft ft ftte | 2015 STCTIUATTNTN UTITTTEMTETTT T TTTTTTTTTT<br>u<br>0.56 10<br>5<br>0.52 PE tT | eS| 0 BeWoh<br>0 2 4 6 8 0.0001 0.001 0.01 0.1 1 10 100 1000<br>VR, REVERSE VOLTAGE (V) tp (mSec)<br>A)<br><br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br> (A)<br>IFSM<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 4. Capacitance** 

**Figure 5. Maximum Non−repetitive Peak Forward Current as a Function of Pulse Duration, Typical Values** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **SOD−323 1.70x1.25x0.85** CASE 477 ISSUE K 

## DATE 11 MAR 2024 

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GENERIC<br>MARKING DIAGRAM*<br>XX M XX M<br>STYLE 1 STYLE 2<br>XX = Specific Device Code<br>M = Date Code<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

STYLE 1: STYLE 2: PIN 1. CATHODE (POLARITY BAND) NO POLARITY 2. ANODE 

## **DOCUMENT NUMBER:** 

**98ASB17533C** 

## **DESCRIPTION: SOD−323 1.70x1.25x0.85** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **PAGE 1 OF 1** 

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