# Small Signal Schottky Diode, Single, 70 V, 10 mA, 1 V, 150 °C

![Product image](https://novapart.co/image/farnell:2463398RL/)

**URL**: https://novapart.co/products/MMDL770T1G/small-signal-schottky-diode-single-70-v-10-ma-1
**SKU**: MMDL770T1G
**Manufacturer**: ONSEMI
**Price**: €0.0300
**Stock**: 1000+
**Lead Time**: 97 days (indicative)

## Description

Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):10mA; Forward Voltage VF Max:1V; Forward Surge Current Ifsm Max:-; Operating Temperature Max:150°C; Diode C

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | MMDL7 |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOD-323 |
| Diode Configuration | Single |
| Forward Voltage Max | 1V |
| Forward Surge Current | - |
| Reverse Recovery Time | - |
| Average Forward Current | 10mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 70V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2463398RL/)

MMDL770T1G 

## Schottky Barrier Diode 

Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. 

## **Features** 

- Extremely Low Minority Carrier Lifetime 

## **http://onsemi.com** 

- Very Low Capacitance − 1.0 pF @ 20 V 

- Low Reverse Leakage − 200 nA (max) 

- High Reverse Voltage − 70 V (min) 

## **1.0 pF SCHOTTKY BARRIER DIODE** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

|**MAXIMUM RATINGS**||
|---|---|
|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Reverse Voltage<br>VR<br>70<br>Vdc<br>**THERMAL CHARACTERISTICS**<br>**Characteristic**<br>**Symbol**<br>**Max**<br>**Unit**<br>Total Device Dissipation FR−5 Board,<br>(Note 1) @TA= 25°C<br>Derate above 25°C<br>PD<br>200<br>1.57<br>mW<br>mW/°C<br>Thermal Resistance, Junction−to−Ambient<br>R JA<br>635<br>°C/W<br>~~ee~~<br>~~ee~~<br>~~a~~||
|Junction and Storage Temperature Range<br>TJ, Tstg<br>−55 to +150|°C|
|Stresses exceeding Maximum Ratings may damage the device. Maximum||
|Ratings are stress ratings only. Functional operation above the Recommended<br>Operating Conditions is not implied. Extended exposure to stresses above the<br>Recommended Operating Conditions may affect device reliability.<br>1. FR−5 Minimum Pad||



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1 2<br>CATHODE ANODE<br>**----- End of picture text -----**<br>


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2<br>1<br>nd<br>SOD−323<br>CASE 477<br>STYLE 1<br>MARKING DIAGRAM<br>5H M<br>i i<br>5H = Device Code<br>M = Date Code*<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>*Date Code orientation may vary depending<br>upon manufacturing location.<br>**----- End of picture text -----**<br>


**ORDERING INFORMATION Device Package Shipping**[†] MMDL770T1G SOD−323 3000 / Tape & Reel (Pb−Free) ~~TF~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **MMDL770T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2011 **June, 2011 − Rev. 3** 

**MMDL770T1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Breakdown Voltage<br>(IR= 10�A)|V(BR)R|70|−|−|V|
|Diode Capacitance<br>(VR= 20 V, f = 1.0 MHZ)|CT|−|0.5|1.0|pF|
|Reverse Leakage<br>(VR= 35 V)|IR|−|9.0|200|nAdc|
|Forward Voltage<br>(IF= 1.0 mAdc)<br>(IF= 10 mA)|VF|−<br>−|0.42<br>0.7|0.5<br>1.0|Vdc|



## **TYPICAL CHARACTERISTICS** 

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2.0<br>MMBD770T1<br>f = 1.0 MHz<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>0 5.0 10 15 20 25 30 35 40 45 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>, TOTAL CAPACITANCE (pF)<br>CT<br>**----- End of picture text -----**<br>


**Figure 1. Total Capacitance** 

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**----- Start of picture text -----**<br>
500<br>MMBD770T1<br>400<br>KRAKAUER METHOD<br>300<br>200<br>100<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>IF, FORWARD CURRENT (mA)<br>, MINORITY CARRIER LIFETIME (ps)<br>�<br>**----- End of picture text -----**<br>


**Figure 2. Minority Carrier Lifetime** 

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**----- Start of picture text -----**<br>
10 100<br>MMBD770T1 MMBD770T1<br>1.0 TA = 100°C<br>10<br>TA = 75°C TA = 85°C TA = -�40°C<br>0.1<br>1.0<br>0.01 TA = 25°C TA = 25°C<br>0.001 0.1<br>0 10 20 30 40 50 0.2 0.4 0.8 1.2 1.6 2.0<br>VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)<br>�<br>, REVERSE LEAKAGE (   A) , FORWARD CURRENT (mA)<br>IR IF<br>**----- End of picture text -----**<br>


**Figure 3. Reverse Leakage** 

**Figure 4. Forward Voltage** 

**http://onsemi.com** 

**2** 

**MMDL770T1G** 

## **PACKAGE DIMENSIONS** 

**SOD−323** CASE 477−02 ISSUE H 

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HE<br>D<br>a,<br>b 1 2 E<br>=<br>A3<br>A<br>C if NOTE 5L A1 C o,<br>NOTE 3<br>**----- End of picture text -----**<br>


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NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. LEAD THICKNESS SPECIFIED PER L/F DRAWING<br>WITH SOLDER PLATING.<br>4. DIMENSIONS A AND B DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>5. DIMENSION L IS MEASURED FROM END OF RADIUS.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.031 0.035 0.040<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A3 0.15 REF 0.006 REF<br>b 0.25 0.32 0.4 0.010 0.012 0.016<br>C 0.089 0.12 0.177 0.003 0.005 0.007<br>D 1.60 1.70 1.80 0.062 0.066 0.070<br>E 1.15 1.25 1.35 0.045 0.049 0.053<br>L 0.08 0.003<br>HE 2.30 2.50 2.70 0.090 0.098 0.105<br>STYLE 1: 4<br>PIN 1. CATHODE (POLARITY BAND)<br>2. ANODE<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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0.63<br>0.025 ><br>0.83<br>0.033<br>1.60<br>Us<br>0.063<br>2.85<br>0.112<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative 

## **LITERATURE FULFILLMENT** : 

**MMDL770T1/D** 

**http://onsemi.com 3** 



## Links

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- [Supplier page](https://es.farnell.com/on-semiconductor/mmdl770t1g/diode-70v-sod-323/dp/2463398RL)
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