# Bipolar - RF Transistor, NPN, 25 V, 650 MHz, 310 mW, 50 mA, SOT-23

![Product image](https://novapart.co/image/farnell:3944196RL/)

**URL**: https://novapart.co/products/MMBTH10Q-7-F/bipolar-rf-transistor-npn-25-v-650-mhz-310-mw-50
**SKU**: MMBTH10Q-7-F
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors
**Price**: €0.0990
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 310mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 650MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 60hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 50mA |
| Collector Emitter Voltage Max | 25V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944196RL/)

**MMBTH10Q** 

**25V NPN SURFACE MOUNT VHF/UHF TRANSISTOR IN SOT23** 

## **Description** 

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications. 

## **Features** 

- BVCEO > 25V 

- IC = 50mA Continuous Collector Current 

## **Mechanical Data** 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads, Solderable per MILSTD-202, Method 208 

   - Weight: 0.008 grams (Approximate) 

- Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators 

- High Current Gain Bandwidth Product 

- Ideal for Mixer and RF Amplifier Applications with Collector Currents in the 100µA to 30mA Range 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. "Green" Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

**==> picture [221 x 93] intentionally omitted <==**

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@ SOT23  ©<br>Top View  Device Symbol<br>**----- End of picture text -----**<br>


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Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity Per Reel**|
|---|---|---|---|---|---|
|MMBTH10Q-7-F|Automotive|K3Y|7|8|3000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

SOT23 K3Y = Product Type Marking Code YM = Date Code Marking K3Y K3Y Y = Year ex: F = 2018 M = Month ex: 9 = September ~~=m~~ Date Code Key **Year 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code** F G H I J K L M N O P Q ~~[/ | | | — —— — —— — ]— — 1T7~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~[_EE~~ **Code** 1 2 3 4 5 6 7 8 9 O N D 

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MMBTH10Q Document number: DS40731  Rev. 4 - 2 

December 2018 © Diodes Incorporated 

**www.diodes.com** 

**MMBTH10Q** 

**Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|30|V|
|Collector-Emitter Voltage|VCEO|25|V|
|Emitter-Base Voltage|VEBO|3|V|
|Collector Current|IC|50|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 6)|PD|310|mW|
||(Note 7)||350||
|Thermal Resistance, Junction to Ambient|(Note 6)|RϴJA|403|°C/W|
||(Note 7)||357||
|Thermal Resistance,Junction to Leads|(Note 8)|RϴJL|350|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-65 to +150|°C|



- Notes: 6. For a device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper; device is measured under still air conditions whilst operating in a steady-state. 

   7. Same as Note 6, except mounted on 15mm × 15mm 1oz copper. 

   8. Thermal resistance from junction to solder-point (at the end of the collector lead). 

## **Thermal Characteristics and Derating Information** 

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0. 4 40 0<br>Pt tt tt ty tL ELL LL 35 0 | |<br>0. 3 PN 30 0 EFC errT a<br>PN 25 0 ETT|_|<br>D=0.5<br>0. 2 PTT 20 0 Tl<br>PTT tttFIT NETLINGLENI LLLET 15 0 PHIeeHTT D=0.1 a CHT CTE|HH<br>0. 1 10 0 D=0.2 Single Pulse<br>0. 0 PLTSERTT ET TT ANGlUING \ Ey 5 00 Coeerirem | TA| D=0.05 CHHCEMUP<br>0 25 50 75 100 125 150 100μµ 1m 10m 100m 1 10 100 1k<br> Temperature (oC) Pulse Width (s)<br>Derating Curve Transient Thermal Impedance<br>1 0<br>PNTKOT TTTet Single Pulse. TA=25 [o] C thnt<br>PONTE TET PETIT PTI TTT<br>PUPAE PETIT TUTTI FTE TUT<br>1 SINT<br>Sea|ei iiaeefii,estitleeei e aiee<br>TE TIT TC ee<br>0. 1 CHTC<br>10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Pulse Power Dissipation<br>C/W)<br>o<br> Max Power Dissipation (W) Thermal Resistance (<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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MMBTH10Q Document number: DS40731  Rev. 4 - 2 

December 2018 © Diodes Incorporated 

**MMBTH10Q** 

|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)<br>~~———~~|= +25°C, unless otherwise specified.)|= +25°C, unless otherwise specified.)|||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~———~~|**Symbol **|**Min**|**Typ**|**Max **|**Unit**|**Test Condition **|
|**OFF CHARACTERISTICS(Note 9)**<br>~~———~~|||||||
|Collector-Base Breakdown Voltage<br>~~———~~<br>~~————~~<br>~~a~~|BVCBO<br>~~a~~|30<br>~~a~~|—|—|V|IC= 100µA|
|Collector-Emitter Breakdown Voltage<br>~~———~~<br>~~————~~<br>~~a~~|BVCEO<br>~~a~~|25<br>~~a~~|—|—|V|IC= 1mA|
|Emitter-BaseBreakdown Voltage<br>~~————~~<br>~~a~~|BVEBO<br>~~a~~|3<br>~~a~~|—|—|V|IC= 100µA|
|Collector-Base Cut-Off Current<br>~~————~~<br>~~a ~~<br>~~————_——————————~~|ICBO<br> ~~a ~~<br>~~————_——————————~~|—<br> ~~a~~<br>~~————_——————————~~|—<br>~~————_——————————~~|100<br>~~————_——————————~~|nA<br>~~————_——————————~~|VCB= 25V<br>~~————_——————————~~|
|Emitter-Base Cut-OffCurrent<br>~~————_——————————~~|IEBO<br>~~————_——————————~~<br>~~a~~|—<br>~~————_——————————~~<br>~~a~~|—<br>~~————_——————————~~|100<br>~~————_——————————~~|nA<br>~~————_——————————~~|VEB= 2V<br>~~————_——————————~~|
|**ON CHARACTERISTICS(Note 9)**<br>~~————_——————————~~<br>~~——————~~<br>~~a~~|||||||
|DC Current Gain<br>~~——————~~|hFE<br>~~——————~~<br>~~a~~|60<br>~~——————~~<br>~~a~~|—<br>~~——————~~|—<br>~~——————~~|—<br>~~——————~~|VCE= 10V,IC= 4mA<br>~~——————~~|
|Collector-Emitter Saturation Voltage<br>~~——————~~|VCE(SAT)<br>~~——————~~<br>~~a~~|—<br>~~——————~~<br>~~a~~|—<br>~~——————~~|0.5<br>~~——————~~|V<br>~~——————~~|IC= 4mA,IB= 400µA<br>~~——————~~|
|Base-Emitter Voltage<br>~~————_—_————_——_——_———~~|CE(SAT)<br>VBE(SAT)<br>~~a~~<br>~~————_—_————_——_——_———~~|—<br>~~a~~<br>~~————_—_————_——_——_———~~|—<br>~~————_—_————_——_——_———~~|0.95<br>~~————_—_————_——_——_———~~|V<br>~~————_—_————_——_——_———~~|IC= 4mA,IB= 400µA<br>~~————_—_————_——_——_———~~|
|Base-Emitter Turn-on Voltage<br>~~————_—_————_——_——_———~~|BE(SAT)<br>VBE(ON)<br>~~————_—_————_——_——_———~~<br>~~GO~~|—<br>~~————_—_————_——_——_———~~<br>~~GO GO~~|—<br>~~————_—_————_——_——_———~~<br>~~GO~~|0.95<br>~~————_—_————_——_——_———~~<br>~~GO~~|V<br>~~————_—_————_——_——_———~~<br>~~GO~~|VCE= 10V,IC= 4mA<br>~~————_—_————_——_——_———~~<br>~~GO~~|
|BE(ON)<br>**SMALLSIGNALCHARACTERISTICS**<br>~~————_—_————_——_——_———~~<br>~~a~~<br>~~GO GO~~|||||||
|Current Gain Bandwidth Product<br>~~a~~|fT<br>~~a~~<br>~~GO~~<br>~~a~~|650<br>~~a~~<br>~~GO GO~~|—<br>~~a~~<br>~~GO~~|—<br>~~a~~<br>~~GO~~|MHz<br>~~a~~<br>~~GO~~|VCE= 10V, IC= 4mA,<br>f = 100MHz<br>~~a~~<br>~~GO~~|
|Collector-Base Capacitance<br>~~a~~|CCBO<br>~~GO~~<br>~~a~~<br>~~a~~|—<br>~~GO GO~~<br>~~a~~|—<br>~~GO~~<br>~~a~~|0.7<br>~~GO~~<br>~~a~~|pF<br>~~GO~~<br>~~a~~|VCB= 10V,f = 1MHz<br>~~GO~~<br>~~a~~|
|Collector-BaseFeedbackCapacitance<br>~~a~~|CRBO<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~I~~|—<br>~~a~~<br>~~I~~|0.65<br>~~a~~|pF<br>~~a~~|VCB= 10V,f = 1MHz<br>~~a~~|
|Collector-Base Time Constant<br>~~a~~<br>~~I~~|Rb’Cc<br>~~a~~<br>~~a~~<br>~~I~~|—<br>~~a~~<br>~~I~~<br>~~I~~|—<br>~~a~~<br>~~I~~<br>~~I~~|9<br>~~a~~<br>~~I~~|ps<br>~~a~~<br>~~I~~|VCB= 10V, f = 31.8MHz,<br>IC= 4mA<br>~~a~~<br>~~I~~|



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MMBTH10Q Document number: DS40731  Rev. 4 - 2 

December 2018 © Diodes Incorporated 

**MMBTH10Q** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

Fig. 1 Collector Emitter Saturation Voltage vs. Collector Current 

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VBE(ON) @ VCE = 5V<br>**----- End of picture text -----**<br>


Fig. 3 Base Emitter Voltage vs. Collector Current 

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oe ae<br>ohh<br>E Vce = SVEHt<br>Pei tt<br>ee ee|<br>ell<br>499 Se<br>Sereeel<br>rT | ft [little |. Nt<br>A |<br>ee ll<br>SESS ae<br>Ft<br>a a ||<br>ee lll<br>1 10<br>Ic, COLLECTOR CURRENT (mA)<br>Fig. 2 DC Current Gain vs. Collector Current<br>**----- End of picture text -----**<br>


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i ee:<br>Voce = SV = ee<br>**----- End of picture text -----**<br>


Fig. 4 Gain Bandwidth Product vs. Collector Current 

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MMBTH10Q Document number: DS40731  Rev. 4 - 2 

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**MMBTH10Q** 

## **Package Outline Dimensions** 

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Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT23<br>All 7°<br>H<br>GAUGE PLANE SOT23<br>0.25 Dim  Min  Max  Typ<br>K1 K J A  0.37  0.51  0.40<br>B  1.20 1.40 1.30<br>C  2.30 2.50 2.40<br>a D  0.89 1.03 0.915<br>A M<br>F  0.45 0.60 0.535<br>Vesa JR L ; L1 EERE G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>= ——<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>C B K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>L1  0.25  0.55  0.40<br>M  0.085 0.150 0.110<br>i =e<br>D a  0°  8°  --<br>All Dimensions in mm<br>F G<br>LetJL - -—_————_<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. **SOT23** Y Y1 ~~ot~~ C ~~Para CooL~~ X X1 

|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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MMBTH10Q Document number: DS40731  Rev. 4 - 2 

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**MMBTH10Q** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com** 

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MMBTH10Q Document number: DS40731  Rev. 4 - 2 

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