# Bipolar (BJT) Single Transistor, General Purpose, PNP, 300 V, 500 mA, 300 mW, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:1653706/) **URL**: https://novapart.co/products/MMBTA92LT1G/bipolar-bjt-single-transistor-general-purpose-pnp **SKU**: MMBTA92LT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0390 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:-500mA; DC Current Gain hFE:50hFE; Transistor Cas ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | MMBTxxxx | | Qualification | AEC-Q101 | | Power Dissipation | 300mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | PNP | | Transition Frequency | 50MHz | | Transistor Case Style | SOT-23 | | Dc Current Gain Hfe Min | 50hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 500mA | | Collector Emitter Voltage Max | 300V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1653706/) ## MMBTA92L, SMMBTA92L, MMBTA93L ## High Voltage Transistors **PNP Silicon** ## **http://onsemi.com** ## **Features** - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable COLLECTOR Site and Control Change Requirements; AEC−Q101 Qualified and 3 PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE **MAXIMUM RATINGS** ~~&~~ ) 2 **Rating Symbol 92 93 Unit** EMITTER Collector−Emitter Voltage VCEO −300 −200 Vdc Collector−Base Voltage VCBO −300 −200 Vdc 3 **MARKING DIAGRAM** Emitter−Base Voltage VEBO −5.0 −5.0 Vdc 1 Collector Current — Continuous IC −500 mAdc 2 2x M **DEVICE MARKING SOT−23 (TO−236AF)** ~~=Es~~ MMBTA92L, SMMBTA92L = 2D; MMBTA93LT1 = 2E **CASE 318** ~~,~~ **STYLE 6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** 2x = Specific Device Code M = Date Code* Total Device Dissipation FR−5 Board(Note 1) TA = 25 ° C PD 225 mW = Pb−Free Package Derate above 25 ° C 1.8 mW/ ° C (*Note: Microdot may be in either location) Thermal Resistance, Junction to Ambient R JA 556 ° C/W *Date Code orientation and/or overbar mayvary depending upon manufacturing location. Total Device Dissipation (Note 2) PD 300 mW Alumina Substrate,[(2)] TA = 25 ° C Derate above 25 ° C 2.4 mW/ ° C **ORDERING INFORMATION** Thermal Resistance, Junction to Ambient R JA 417 ° C/W **Device Package Shipping**[†] Junction and Storage Temperature TJ, Tstg −55 to ° C MMBTA92LT1G SOT−23 3000 / Tape & Reel +150 ~~=.~~ (Pb−Free) Stresses exceeding Maximum Ratings may damage the device. Maximum SMMBTA92LT1G SOT−23 3000 / Tape & Reel Ratings are stress ratings only. Functional operation above the Recommended (Pb−Free) Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MMBTA92LT3G SOT−23 10000 / Tape & Reel 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. (Pb−Free) SMMBTA92LT3G SOT−23 10000 / Tape & Reel (Pb−Free) MMBTA93LT1G SOT−23 3000 / Tape & Reel (Pb−Free) ~~—oae ==~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 **1** Publication Order Number: **January, 2013 − Rev. 10 MMBTA92LT1/D** Publication Order Number: **MMBTA92LT1/D** **MMBTA92L, SMMBTA92L, MMBTA93L** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Breakdown Voltage (Note 3)
(IC= −1.0 mAdc, IB= 0)
MMBTA92, SMMBTA92
MMBTA93|V(BR)CEO|−300
−200|−
−|Vdc| |Collector−Base Breakdown Voltage
(IC= −100�Adc, IE= 0)
MMBTA92, SMMBTA92
MMBTA93|V(BR)CBO|−300
−200|−
−|Vdc| |Emitter−Base Breakdown Voltage
(IE= −100�Adc, IC= 0)|V(BR)EBO|−5.0|−|Vdc| |Collector Cutoff Current
(VCB= −200 Vdc, IE= 0)
MMBTA92, SMMBTA92
(VCB= −160 Vdc, IE= 0)
MMBTA93|ICBO|−
−|−0.25
−0.25|�Adc| |Emitter Cutoff Current
(VEB= −3.0 Vdc, IC= 0)|IEBO|−|−0.1|�Adc| |**ON CHARACTERISTICS**(Note 3)||||| |DC Current Gain
(IC= −1.0 mAdc, VCE= −10 Vdc)
Both Types
(IC= −10 mAdc, VCE= −10 Vdc)
Both Types
(IC= −30 mAdc, VCE= −10 Vdc)
MMBTA92, SMMBTA92
MMBTA93|hFE|25
40
25
25|−
−
−
−|−| |Collector−Emitter Saturation Voltage
(IC= −20 mAdc, IB= −2.0 mAdc)
MMBTA92, SMMBTA92
MMBTA93|VCE(sat)|−
−|−0.5
−0.5|Vdc| |Base−Emitter Saturation Voltage
(IC= −20 mAdc, IB= −2.0 mAdc)|VBE(sat)|−|−0.9|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**||||| |Current−Gain — Bandwidth Product
(IC= −10 mAdc, VCE= −20 Vdc, f = 100 MHz)|fT|50|−|MHz| |Collector−Base Capacitance
(VCB= −20 Vdc, IE= 0, f = 1.0 MHz)
MMBTA92, SMMBTA92
MMBTA93|Ccb|−
−|6.0
8.0|pF| 3. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2.0%. **==> picture [484 x 170] intentionally omitted <==** **----- Start of picture text -----**
300
TJ = +125°C VCE = 10 Vdc
250
200
25°C
150
-55°C
100
50
0
0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
**----- End of picture text -----**
**Figure 1. DC Current Gain** **http://onsemi.com** **2** **MMBTA92L, SMMBTA92L, MMBTA93L** **==> picture [238 x 170] intentionally omitted <==** **----- Start of picture text -----**
100
Cib @ 1MHz
10
Ccb @ 1MHz
1.0
0.1
0.1 1.0 10 100 1000
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 2. Capacitance** **==> picture [235 x 170] intentionally omitted <==** **----- Start of picture text -----**
150
130
110
90
70
50 TJ = 25 ° C
VCE = 20 Vdc
30 F = 20 MHz
10
1 3 5 7 9 11 13 15 17 19 21
IC, COLLECTOR CURRENT (mA)
f�, CURRENT-GAIN — BANDWIDTH (MHz)T
**----- End of picture text -----**
**Figure 3. Current−Gain − Bandwidth** **==> picture [241 x 171] intentionally omitted <==** **----- Start of picture text -----**
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
**----- End of picture text -----**
VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V **Figure 4. “ON” Voltages** **==> picture [245 x 175] intentionally omitted <==** **----- Start of picture text -----**
1000
1.0 s 100 � s 10 � s
100 ms
100
10 ms
1.0 ms
10
Single Pulse Test TA = 25 ° C
1
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (mA)
IC
**----- End of picture text -----**
**Figure 5. Safe Operating Area** **http://onsemi.com** **3** **MMBTA92L, SMMBTA92L, MMBTA93L** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. **==> picture [235 x 169] intentionally omitted <==** **----- Start of picture text -----**
D
SEE VIEW C
3
E HE
c
1 2
b
e 0.25
A
L
A1
L1
VIEW C
**----- End of picture text -----**
2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. |**DIM**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**| |---|---|---|---|---|---|---| ||**MIN**|**NOM**|**MAX**|**MIN**|**NOM**|**MAX**| |**A**|0.89|1.00|1.11|0.035|0.040|0.044| |**A**
**A1**|0.89
0.01|1.00
0.06|1.11
0.10|0.035
0.001|0.040
0.002|0.044
0.004| |**A1**
**b**|0.01
0.37|0.06
0.44|0.10
0.50|0.001
0.015|0.002
0.018|0.004
0.020| |**c**
**D**|0.09
2.80|0.13
2.90|0.18
3.04|0.003
0.110|0.005
0.114|0.007
0.120| |**D**
**E**|2.80
1.20|2.90
1.30|3.04
1.40|0.110
0.047|0.114
0.051|0.120
0.055| |**e**|1.78|1.90|2.04|0.070|0.075|0.081| |**L**|0.10|0.20|0.30|0.004|0.008|0.012| |**L1**|0.35|0.54|0.69|0.014|0.021|0.029| |**HE**|2.10
0
°|2.40
−−−|2.64
10
°|0.083
0
°|0.094
−−−|0.104
10
°| ## **SOLDERING FOOTPRINT** **==> picture [158 x 144] intentionally omitted <==** **----- Start of picture text -----**
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1 mm
_ (— inches )
0.8
0.031 vs
**----- End of picture text -----**
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