# Bipolar (BJT) Single Transistor, PNP, 30 V, 500 mA, 225 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2464053/)

**URL**: https://novapart.co/products/MMBTA64LT1G/bipolar-bjt-single-transistor-pnp-30-v-500-ma-225
**SKU**: MMBTA64LT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0590
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Qualification | AEC-Q101 |
| Power Dissipation | 225mW |
| Dc Current Gain Hfe | 10000hFE |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 125MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 10000hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 30V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2464053/)

## MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G 

## Darlington Transistors **PNP Silicon** 

## **http://onsemi.com** 

## **Features** 

- AEC−Q101 Qualified and PPAP Capable 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 

## **SOT−23 (TO−236) CASE 318 STYLE 6** 

**MAXIMUM RATINGS** 

**==> picture [104 x 52] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR 3<br>BASE<br>1<br>EMITTER 2<br>**----- End of picture text -----**<br>


**Rating Symbol Value Unit** Collector−Emitter Voltage VCESCES −30 Vdc Collector−Base Voltage VCBOCBO −30 Vdc Emitter−Base Voltage VEBOEBO −10 Vdc Collector Current − Continuous ICC −500 mAdc ~~a~~ 

**Rating Symbol Value Unit** BASE 1 Collector−Emitter Voltage VCESCES −30 Vdc Collector−Base Voltage VCBOCBO −30 Vdc EMITTER 2 Emitter−Base Voltage VEBOEBO −10 Vdc **MARKING DIAGRAM** Collector Current − Continuous ICC −500 mAdc ~~a~~ **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** 2x M Total Device Dissipation FR−5 Board, PD (Note 1) TA = 25C 225 mW 1 Derate above 25C 1.8 mW/C 2x = Device Code Thermal Resistance, Junction−to−Ambient R JA 556 C/W x = U for MMBTA63LT1G ~~—Fa~~ & x = V for MMBTA64LT1G Total Device Dissipation PD Alumina Substrate, (Note 2) SMMBTA64LT1G TA = 25C 300 mW M = Date Code* Derate above 25C 2.4 mW/C = Pb−Free Package Thermal Resistance, Junction−to−Ambient R JA 417 C/W (Note: Microdot may be in either location) Junction and Storage Temperature TJ, Tstg −55 to +150 C *Date Code orientation and/or overbar may 

SMMBTA64LT1G 

(Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 

**ORDERING INFORMATION Device Package Shipping**[†] MMBTA63LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) MMBTA64LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) SMMBTA64LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) ~~==~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MMBTA63LT1/D** 

**1** 

 Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. 5** 

## **MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS **(TA= 25C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage<br>(IC= −100�Adc)|V(BR)CEO|−30|−|Vdc|
|Collector Cutoff Current<br>(VCB= −30 Vdc)|ICBO|−|−100|nAdc|
|Emitter Cutoff Current<br>(VEB= −10 Vdc)|IEBO|−|−100|nAdc|
|**ON CHARACTERISTICS**|||||
|DC Current Gain (Note 3)<br>(IC= −10 mAdc, VCE= −5.0 Vdc)<br>MMBTA63<br>(IC= −10 mAdc, VCE= −5.0 Vdc)<br>MMBTA64, SMMBTA64<br>(IC= −100 mAdc, VCE= −5.0 Vdc)<br>MMBTA63<br>(IC= −100 mAdc, VCE= −5.0 Vdc)<br>MMBTA64, SMMBTA64|hFE|5,000<br>10,000<br>10,000<br>20,000|−<br>−<br>−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= −100 mAdc, IB= −0.1 mAdc)|VCE(sat)|−|−1.5|Vdc|
|Base − Emitter On Voltage<br>(IC= −100 mAdc, VCE= −5.0 Vdc)|VBE(on)|−|−2.0|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mAdc, VCE= −5.0 Vdc, f = 100 MHz)|fT|125|−|MHz|



3. Pulse Test: Pulse Width  300 � s, Duty Cycle  2.0%. 

**http://onsemi.com** 

**2** 

**MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G** 

**==> picture [490 x 609] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>TA = 125  C<br>100<br>70<br>50<br>-10 V<br>30 25  C<br>20 V CE  = -2.0 V<br>-5.0 V<br>10<br>7.0<br>5.0 -55  C<br>3.0<br>2.0<br>-0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300<br>IC, COLLECTOR CURRENT (mA)<br>Figure 1. DC Current Gain<br>-2.0 -2.0<br>TA = 25  C -1.8 TA = 25  C<br>-1.6 VBE(sat) @ IC/IB = 100<br>-1.6<br>-1.2 IC = -10 mA -50 mA -100 mA -175 mA -300 mA<br>-1.4<br>VBE(on) @ VCE = -5.0 V<br>-0.8 VCE(sat) @ IC/IB = 1000 -1.2<br>IC/IB = 100<br>-1.0<br>-0.4<br>-0.8<br>0 -0.6<br>-0.3 -0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 -100 -200 -300 -0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100-200-500 -1K-2K -5K-10K<br>IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (�A)<br>Figure 3. “On” Voltage Figure 2. Collector Saturation Region<br>10 1<br>1 ms<br>VCE = -5.0 V<br>f = 100 MHz<br>4.03.0 TA = 25  C 10 ms<br>2.0 0.1 100 ms<br>1 s<br>1.0<br>0.4 �0.01 Thermal Limit<br>0.2 Single Pulse Test<br>@ TA = 25  C<br>0.1 0.001<br>-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1K 0.01 0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>hFE, DC CURRENT GAIN (X1.0 K)<br>V, VOLTAGE (VOLTS)<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>, COLLECTOR CURRENT (A)<br>IC<br>|hFE|, HIGH FREQUENCY CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 4. High Frequency Current Gain** 

**Figure 5. Safe Operating Area** 

**http://onsemi.com** 

**3** 

**MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AP 

**==> picture [188 x 39] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH<br>THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM<br>THICKNESS OF BASE MATERIAL.<br>**----- End of picture text -----**<br>


|||||||||||||**D**|**D**||||||||||||||||||||||||2.|CONTROLLING DIMENSION: INCH.|CONTROLLING DIMENSION: INCH.|||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||**3**||||||||||**SEE VIEW C**||**SEE VIEW C**||**SEE VIEW C**||||||||||||3. <br>4.|MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH<br>THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM<br>THICKNESS OF BASE MATERIAL.<br> DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,<br>PROTRUSIONS,OR GATE BURRS.||||
||**E**||||||||||||||||||**H**|**E**||||||||||||||||||**DIM**<br>**MIN**<br>**NOM**<br>**MAX**<br>**MILLIMETERS**|**MIN**|**INCHES**<br>**NOM**|**MAX**|
|||||||||||**1**||||**2**||||||||||||||||||||**c**||||**A**<br>0.89<br>1.00<br>1.11<br>**A1**<br>0.01<br>0.06<br>0.10<br>**b**<br>0.37<br>0.44<br>0.50|0.035<br>0.001<br>0.015|0.040<br>0.002<br>0.018|0.044<br>0.004<br>0.020|
|||||||||||||**e**||||||**b**||||||||||||||||0.25||||**c**<br>0.09<br>0.13<br>0.18<br>**D**<br>2.80<br>2.90<br>3.04|0.003<br>0.110|0.005<br>0.114|0.007<br>0.120|
|||||||||||||||||||||||||||||||||||||||**E**<br>1.20<br>1.30<br>1.40|0.047|0.051|0.055|
|||||||||||||||||||||||||||||||||||||||**e**<br>1.78<br>1.90<br>2.04|0.070|0.075|0.081|
|||||||||||||||||||||||||||||||||||||||**L**<br>0.10<br>0.20<br>0.30|0.004|0.008|0.012|
|**A**||||||||||||||||||||||||||||||||||||||**L1**<br>2.10<br>2.40<br>2.64<br>**HE**<br>0.35<br>0.54<br>0.69|0.083<br>0.014|0.094<br>0.021|0.104<br>0.029|
||**A1**|||||||||||||||||||||||||||**L1**|||**L**|||||||0<br>−−−<br>10<br><br><br>STYLE 6:<br>PIN 1.<br>BASE|0<br>|−−−|10<br>|
|||||||||||||||||||||||||||||**VIEW C**||||||||||2.<br>EMITTER<br>3.<br>COLLECTOR||||



## **SOLDERING FOOTPRINT** 

**==> picture [157 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.95<br>0.037<br>0.95<br>0.037<br>2.0<br>0.079<br>0.9<br>0.035<br>SCALE 10:1 mm<br>= (— inches )<br>0.8<br>0.031 be<br>**----- End of picture text -----**<br>


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## **PUBLICATION ORDERING INFORMATION** 

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## **LITERATURE FULFILLMENT** : 

**MMBTA63LT1/D** 

**http://onsemi.com** 

**4** 



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---

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