# Bipolar (BJT) Single Transistor, PNP, 80 V, 500 mA, 150 mW, SOT-323, Surface Mount ![Product image](https://novapart.co/image/farnell:2533334/) **URL**: https://novapart.co/products/MMBTA56WT1G/bipolar-bjt-single-transistor-pnp-80-v-500-ma-150 **SKU**: MMBTA56WT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0290 **Stock**: 10+ **Lead Time**: 131 days (indicative) ## Description Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power Dissipation Pd:150mW; DC Collector Current:-500mA; DC Current Gain hFE:100hFE; Transist ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 150mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | PNP | | Transition Frequency | 50MHz | | Transistor Case Style | SOT-323 | | Dc Current Gain Hfe Min | 100hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 500mA | | Collector Emitter Voltage Max | 80V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2533334/) ## MMBTA56W, SMMBTA56W ## Driver Transistor ## **PNP Silicon** ## **Features** - Moisture Sensitivity Level: 1 **www.onsemi.com** - ESD Rating: - ♦ Human Body Model − 4 kV - ♦ Machine Model − 400 V - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector−Emitter Voltage|VCEO|−80|Vdc| |Collector−Base Voltage|VCBO|−80|Vdc| |Emitter−Base Voltage|VEBO|−4.0|Vdc| |Collector Current − Continuous|IC|−500|mAdc| |**THERMAL CHARACTERISTICS**|||| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Total Device Dissipation FR−5 Board|PD||mW| |TA= 25°C||460|| |Thermal Resistance, Junction to Ambient|R JA|272|°C/W| |(Note 1)|||| |Junction and Storage Temperature|TJ, Tstg|−55 to +150|°C| ## **THERMAL CHARACTERISTICS** Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 Board, 1 oz. Cu, 100 mm[2] . **SC−70 (SOT−323) CASE 419 STYLE 3** **==> picture [74 x 88] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
3
1
BASE
:
2
EMITTER
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**==> picture [88 x 8] intentionally omitted <==** **----- Start of picture text -----**
MARKING DIAGRAM
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**==> picture [92 x 89] intentionally omitted <==** **----- Start of picture text -----**
FM M
1 -
FM = Device Code
M = Date Code*
= Pb−Free Package
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(Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MMBTA56WT1G
(Pb−Free)|SC−70
(Pb−Free)|3,000 /
Tape & Reel| |SMMBTA56WT1G
(Pb−Free)|SC−70
(Pb−Free)|3,000 /
Tape & Reel| |SMMBTA56WT3G
(Pb−Free)|SC−70
(Pb−Free)|10,000 /
Tape & Reel| - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2012 **September, 2018 − Rev. 5** **MMBTA56WT1/D** ## **MMBTA56W, SMMBTA56W** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Breakdown Voltage (Note 1)
(IC= −1.0 mAdc, IB= 0)|V(BR)CEO|−80|−|Vdc| |Emitter−Base Breakdown Voltage
(IE= −100�Adc, IC= 0)|V(BR)EBO|−4.0|−|Vdc| |Collector Cutoff Current
(VCE= −60 Vdc, IB= 0)|ICES|−|−0.1|�Adc| |Collector Cutoff Current
(VCB= −60 Vdc, IE= 0)
(VCB= −80 Vdc, IE= 0)|ICBO|−
−|−
−0.1|�Adc| |**ON CHARACTERISTICS**||||| |DC Current Gain
(IC= −10 mAdc, VCE= −1.0 Vdc)
(IC= −100 mAdc, VCE= −1.0 Vdc)|hFE|100
100|−
−|−| |Collector−Emitter Saturation Voltage
(IC= −100 mAdc, IB= −10 mAdc)|VCE(sat)|−|−0.25|Vdc| |Base−Emitter On Voltage
(IC= −100 mAdc, VCE= −1.0 Vdc)|VBE(on)|−|−1.2|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**||||| |Current−Gain − Bandwidth Product (Note 2)
(IC= −100 mAdc, VCE= −1.0 Vdc, f = 100 MHz)|fT|50|−|MHz| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. **==> picture [482 x 149] intentionally omitted <==** **----- Start of picture text -----**
TURN-ON TIME TURN-OFF TIME
-1.0 V VCC +VBB VCC
+40 V +40 V
5.0 �s 100 RL 100 RL
+10 V OUTPUT OUTPUT
Vin RB Vin RB
0
tr = 3.0 ns 5.0 �F * CS � 6.0 pF 5.0 �F * CS � 6.0 pF
100 100
5.0 �s
tr = 3.0 ns
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- *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities **Figure 1. Switching Time Test Circuits** **www.onsemi.com** **2** **MMBTA56W, SMMBTA56W** **==> picture [489 x 651] intentionally omitted <==** **----- Start of picture text -----**
200 100
VTJCE = 25 = -2.0 V°C 70 TJ = 25°C
50 Cibo
100
30
70
20
50
10 Cobo
30
7.0
20 5.0
-2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitance
1.0 k -1.0 k
700 -700 100 �s
500 -500 1.0 ms
ts
300 -300 1.0 s
200 -200 TC = 25°C
TA = 25°C
100 -100
70 tf -70
50 -50 CURRENT LIMIT
VCC = -40 V THERMAL LIMIT
30 IC/IB = 10 -30 SECOND BREAKDOWN LIMIT
20 IB1 = IB2 -20
TJ = 25°C td @ VBE(off) = -0.5 V tr
10 -10
-5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Switching Time
Figure 5. Active−Region Safe Operating Area
400 -1.0
TJ = 25°C
T J = 125°C
VCE = -1.0 V -0.8 VBE(sat) @ IC/IB = 10
200
25°C
-0.6
VBE(on) @ VCE = -1.0 V
-55°C
100 -0.4
80
-0.2
60
VCE(sat) @ IC/IB = 10
40 0
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
t, TIME (ns)
IC , COLLECTOR CURRENT (mA)
, DC CURRENT GAIN V, VOLTAGE (VOLTS)
hFE
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**Figure 6. DC Current Gain** **Figure 7. “ON” Voltages** **www.onsemi.com** **3** ## **MMBTA56W, SMMBTA56W** **==> picture [487 x 177] intentionally omitted <==** **----- Start of picture text -----**
-1.0 -0.8
TJ = 25°C
-0.8 -1.2
IC = IC = IC = IC =
-50 mA -100 mA -250 mA -500 mA
-0.6 -1.6
-0.4 -2.0 R�VB for VBE
IC =
-0.2 -10 mA -2.4
0 -2.8
-0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
°
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)
�
VCE R
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**Figure 8. Collector Saturation Region** **Figure 9. Base−Emitter Temperature Coefficient** **www.onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [37 x 36] intentionally omitted <==** **SC−70 (SOT−323)** CASE 419 ISSUE P **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**
DATE 07 OCT 2021
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**SCALE 4:1** ## **GENERIC MARKING DIAGRAM** **==> picture [116 x 78] intentionally omitted <==** **----- Start of picture text -----**
XX M �
�
1
XX = Specific Device Code
M = Date Code
� = Pb−Free Package
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*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. **==> picture [191 x 63] intentionally omitted <==** **----- Start of picture text -----**
STYLE 1: STYLE 2: STYLE 3:
CANCELLED PIN 1. ANODE PIN 1. BASE
2. N.C. 2. EMITTER
3. CATHODE 3. COLLECTOR
STYLE 6: STYLE 7: STYLE 8:
PIN 1. EMITTER PIN 1. BASE PIN 1. GATE
2. BASE 2. EMITTER 2. SOURCE
3. COLLECTOR 3. COLLECTOR 3. DRAIN
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**==> picture [206 x 63] intentionally omitted <==** **----- Start of picture text -----**
STYLE 4: STYLE 5:
PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. ANODE 3. CATHODE
STYLE 9: STYLE 10: STYLE 11:
PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. ANODE 2. CATHODE
3. CATHODE-ANODE 3. ANODE-CATHODE 3. CATHODE
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## **DOCUMENT NUMBER: 98ASB42819B** **DESCRIPTION: SC−70 (SOT−323)** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. 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