# Bipolar (BJT) Single Transistor, General Purpose, NPN, 300 V, 500 mA, 225 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1459111RL/)

**URL**: https://novapart.co/products/MMBTA42LT1G/bipolar-bjt-single-transistor-general-purpose-npn
**SKU**: MMBTA42LT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0390
**Stock**: 10+
**Lead Time**: 63 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:50hFE; Transistor Case

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | MMBTxxxx |
| Qualification | AEC-Q101 |
| Power Dissipation | 225mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 50MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 300V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1459111RL/)

## MMBTA42L, SMMBTA42L, MMBTA43L 

## High Voltage Transistors 

## **NPN Silicon** 

## **Features** 

## **http://onsemi.com** 

- AEC−Q101 Qualified and PPAP Capable 

• S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR 3 Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER 

## **MAXIMUM RATINGS** 

**Characteristic Symbol Value Unit** 3 Collector−Emitter Voltage VCEO Vdc MMBTA42, SMMBTA42 300 1 MMBTA43 200 2 Collector−Base Voltage VCBO Vdc MMBTA42, SMMBTA42 300 **SOT−23 (TO−236)** MMBTA43 200 **CASE 318 STYLE 6** Emitter−Base Voltage VEBO Vdc MMBTA42, SMMBTA42 6.0 MMBTA43 6.0 **MARKING DIAGRAMS** Collector Current − Continuous IC 500 mAdc **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** 1D M M1E M Total Device Dissipation FR−5 Board PD (Note 1) TA = 25 ° C 225 mW 1 1 Derate above 25 ° C 1.8 mW/ ° C Thermal Resistance, Junction−to−Ambient R JA 556 ° C/W 1D = MMBTA42LT, SMMBTA42L M1E = MMBTA43LT Total Device Dissipation AluminaSubstrate (Note 2) TA = 25 ° C PD 300 mW M = Date Code* Derate above 25 ° C 2.4 mW/ ° C = Pb−Free Package (Note: Microdot may be in either location) ~~a~~ Thermal Resistance, Junction−to−Ambient R JA 417 ° C/W *Date Code orientation and/or overbar may ~~i~~ Junction and Storage Temperature TJ, Tstg −55 to +150 ° C vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the **ORDERING INFORMATION** Recommended Operating Conditions may affect device reliability. See detailed ordering and shipping information in the package 1. FR−5 = 1.0 x 0.75 x 0.062 in. dimensions section on page 5 of this data sheet. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 

Publication Order Number: **MMBTA42LT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2012 **July, 2012 − Rev. 12** 

**MMBTA42L, SMMBTA42L, MMBTA43L** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage (Note 3)<br>(IC= 1.0 mAdc, IB= 0)<br>MMBTA42, SMMBTA42<br>MMBTA43|V(BR)CEO|300<br>200|−<br>−|Vdc|
|Collector−Base Breakdown Voltage<br>(IC= 100�Adc, IE= 0)<br>MMBTA42, SMMBTA42<br>MMBTA43|V(BR)CBO|300<br>200|−<br>−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= 100�Adc, IC= 0)|V(BR)EBO|6.0|−|Vdc|
|Collector Cutoff Current<br>(VCB= 200 Vdc, IE= 0)<br>MMBTA42, SMMBTA42<br>(VCB= 160 Vdc, IE= 0)<br>MMBTA43|ICBO|−<br>−|0.1<br>0.1|�Adc|
|Emitter Cutoff Current<br>(VEB= 6.0 Vdc, IC= 0)<br>MMBTA42, SMMBTA42<br>(VEB= 4.0 Vdc, IC= 0)<br>MMBTA43|IEBO|−<br>−|0.1<br>0.1|�Adc|
|**ON CHARACTERISTICS**(Note 3)|||||
|DC Current Gain<br>(IC= 1.0 mAdc, VCE= 10 Vdc)<br>Both Types<br>(IC= 10 mAdc, VCE= 10 Vdc)<br>Both Types<br>(IC= 30 mAdc, VCE= 10 Vdc)<br>MMBTA42, SMMBTA42<br>MMBTA43|hFE|25<br>40<br>40<br>40|−<br>−<br>−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 20 mAdc, IB= 2.0 mAdc)<br>MMBTA42, SMMBTA42<br>MMBTA43|VCE(sat)|−<br>−|0.5<br>0.5|Vdc|
|Base−Emitter Saturation Voltage<br>(IC= 20 mAdc, IB= 2.0 mAdc)|VBE(sat)|−|0.9|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mAdc, VCE= 20 Vdc, f = 100 MHz)|fT|50|−|MHz|
|Collector−Base Capacitance<br>(VCB= 20 Vdc, IE= 0, f = 1.0 MHz)<br>MMBTA42, SMMBTA42<br>MMBTA43|Ccb|−<br>−|3.0<br>4.0|pF|



3. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2.0%. 

**http://onsemi.com** 

**2** 

**MMBTA42L, SMMBTA42L, MMBTA43L** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1.2<br>VCE = 10 V IC/IB = 10<br>1.0<br>TJ = 150 ° C 0.8 150 ° C<br>25 ° C<br>100 0.6<br>25 ° C<br>−55 ° C 0.4<br>0.2<br>−55 ° C<br>10 0.0<br>0.1 1 10 100 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, COLLECTOR−EMITTER<br>, DC CURRENT GAIN<br>FE<br>h SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


**Figure 1. DC Current Gain** 

**Figure 2. Collector−Emitter Saturation Voltage vs. Collector Current** 

**==> picture [493 x 399] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0 1.0<br>0.9 0.9<br>0.8 −55 ° C 0.8 −55 ° C<br>0.7 25 ° C 0.7 25 ° C<br>0.6 0.6<br>0.5 0.5<br>0.4 150 ° C 0.4 150 ° C<br>0.3 0.3<br>0.2 0.2<br>0.1 0.1<br>IC/IB = 10 IC/IB = 10<br>0 0<br>0.1 1 10 100 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Base−Emitter Saturation Voltage vs. Figure 4. Base−Emitter On Voltage vs.<br>Collector Current Collector Current<br>0 100<br>VCE = 10 V Cibo TJ = 25 ° C<br>−0.4 f = 1 MHz<br>−0.8<br>10<br>−1.2 Cobo<br>−1.6<br>� VB, for VBE 1<br>−2.0<br>−2.4 −55 ° C to 150 ° C<br>−2.8 0.1<br>0.1 1 10 100 0.1 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)<br>, BASE−EMITTER<br>BE(sat)<br>V SATURATION VOLTAGE (V) , BASE−EMITTER VOLTAGE (V)<br>BE(on)<br>V<br>C)<br>°<br>C, CAPACITANCE (pF)<br>, TEMPERATURE COEFFICIENT (mV/<br>VB<br>�<br>**----- End of picture text -----**<br>


**Figure 5. Base−Emitter Temperature Coefficient** 

**Figure 6. Capacitance** 

**http://onsemi.com** 

**3** 

## **MMBTA42L, SMMBTA42L, MMBTA43L** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [490 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 1<br>VCE = 20 V<br>TJ = 25 ° C<br>10 ms<br>0.1<br>1.0 s<br>0.01<br>10 0.001<br>1 10 100 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>, CURRENT−GAIN BANDWIDTH (MHz)<br>fTau<br>**----- End of picture text -----**<br>


**Figure 7. Current−Gain — Bandwidth Product** 

**Figure 8. Safe Operating Area** 

**http://onsemi.com** 

**4** 

**MMBTA42L, SMMBTA42L, MMBTA43L** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device Order Number**|**Package Type**|**Shipping**†|
|MMBTA42LT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|SMMBTA42LT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|MMBTA42LT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|SMMBTA42LT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|MMBTA43LT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**http://onsemi.com** 

**5** 

**MMBTA42L, SMMBTA42L, MMBTA43L** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AP 

- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 

**==> picture [462 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|D|2.|CONTROLLING DIMENSION: INCH.|
|3.|MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH|
|SEE VIEW C|THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM|
|3|THICKNESS OF BASE MATERIAL.|
|4.|DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,|
|PROTRUSIONS, OR GATE BURRS.|
|E|HE|MILLIMETERS|INCHES|
|DIM|MIN|NOM|MAX|MIN|NOM|MAX|
|c|A|0.89|1.00|1.11|0.035|0.040|0.044|
|1|2|A1|0.01|0.06|0.10|0.001|0.002|0.004|
|b|b|0.37|0.44|0.50|0.015|0.018|0.020|
|e|0.25|Dc|0.092.80|0.132.90|0.183.04|0.0030.110|0.0050.114|0.0070.120|
|E|1.20|1.30|1.40|0.047|0.051|0.055|
|e|1.78|1.90|2.04|0.070|0.075|0.081|
|L|0.10|0.20|0.30|0.004|0.008|0.012|
|L1|0.35|0.54|0.69|0.014|0.021|0.029|
|A|H|E|2.10|2.40|2.64|0.083|0.094|0.104|
|L|0|°|−−−|10|°|0|°|−−−|10|°|
|A1|L1|STYLE 6:|
|PIN 1.|BASE|
|VIEW C|2.|EMITTER|
|3.|COLLECTOR|

**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

**==> picture [157 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.95<br>0.95 0.037<br>0.037<br>2.0<br>0.079<br>0.9<br>0.035<br>SCALE 10:1 mm<br>= (— inches )<br>0.8<br>0.031 —a " b<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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## **LITERATURE FULFILLMENT** : 

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**MMBTA42LT1/D** 

**6** 



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