# Bipolar (BJT) Single Transistor, NPN, 80 V, 500 mA, 300 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1773631/)

**URL**: https://novapart.co/products/MMBTA06-7-F/bipolar-bjt-single-transistor-npn-80-v-500-ma-300
**SKU**: MMBTA06-7-F
**Manufacturer**: DIODES INC.
**Price**: €0.0410
**Stock**: 500+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 100MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 80V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1773631/)

**MMBTA05 / MMBTA06** 

**NPN SMALL SIGNAL TRANSISTOR IN SOT23** 

## **Features** 

- Epitaxial Planar Die Construction 

- Ideal for Low Power Amplification and Switching 

- Complementary PNP Type: MMBTA55 & MMBTA56 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP capable (Note 4)** 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

- Weight: 0.008 grams (approximate) 

**==> picture [501 x 238] intentionally omitted <==**

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||||||||
|---|---|---|---|---|---|---|
|SOT23|C|
|E|
|B|C|
|B|
|~e|O|n|
|E|
|Top View|
|Top View|
|Device Symbol|Pin Configuration|
|g Information Information|(Notes 4 & 5)|
|Product|Compliance|Marking|Reel size (inches)|Tape width (mm)|Quantity|per reel|
|MMBTA05-7-F|AEC-Q101|K1G / K1H|7|8|3,000|
|MMBTA05Q-13-F|Automotive|K1G / K1H|13|8|10,000|
|MMBTA06-7-F|AEC-Q101|K1G|7|8|3,000|
|MMBTA06Q-7-F|Automotive|K1G|7|8|3,000|

**----- End of picture text -----**<br>


## **Ordering Information Information** (Notes 4 & 5) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable.  Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

Kxx = Product Type Marking Code (See Ordering Information) YM = Date Code Marking Y or Y = Year (ex: A = 2013) ~~|~~ M or M = Month (ex: 9 = September) 

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Date Code Key<br>Year 2010 2011 2012 2013 2014 2015 2016 2017<br>Code X  Y  Z  A  B  C  D  E<br>a<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3  4  5  6  7  8  9  O  N  D<br>+ +} ++ _+_} + +} + | ~+<br>**----- End of picture text -----**<br>


1 of 7 **www.diodes.com** 

MMBTA05 / MMBTA06 Document number: DS30037 Rev. 14 - 2 

November 2013 © Diodes Incorporated 

**MMBTA05 / MMBTA06** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**MMBTA05**|**MMBTA06**|**Unit**|
|Collector-Base Voltage|VCBO|60|80|V|
|Collector-Emitter Voltage|VCEO|60|80|V|
|Emitter-Base Voltage|VEBO|4.0||V|
|Collector Current|IC|500||mA|
|Peak Collector Current|ICM|1||A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 6)|PD|310|mW|
||(Note 7)||350||
|Thermal Resistance, Junction to Ambient|(Note 6)|RθJA|403|C/W|
||(Note 7)||357||
|Thermal Resistance,Junction to Leads|(Note 8)|RθJL|350|C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|C|



## **ESD Ratings** (Note 9) 

|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



- Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

   7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper. 

   8. Thermal resistance from junction to solder-point (at the end of the leads). 

   9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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MMBTA05 / MMBTA06 Document number: DS30037 Rev. 14 - 2 

November 2013 © Diodes Incorporated 

**MMBTA05 / MMBTA06** 

## **Thermal Characteristics and Derating Information** 

**==> picture [444 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.4 400<br>Ft} ] i ttt ty} tt id 350 a a a a a | |<br>0.3 300<br>HN IIHT eelalll<br>PN 250 "dl y |<br>D=0.5<br>0.2 PFT FTI I NELELELU 200 FeTlHEE HITE LIE ll<br>PT IN 150 Se D=0.1 ee | |<br>NJ CT BOT TA TTT HA<br>0.1 100 D=0.2 Single Pulse<br>PNYN 50 rn eeLU aeea QlSI eetalii<br>D=0.05<br>0.0 SER EANGNs 0 ceIH | Ns aWEE | |<br>0 25 50 75 100 125 150 100µ 1m 10m 100m 1 10 100 1k<br> Temperature (°C) Pulse Width (s)<br> Max Power Dissipation (W) Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


## **Derating Curve** 

**Transient Thermal Impedance** 

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10<br>RT Single Pulse. Tamb=25°C i]<br>PNET TTTTT<br>EE<br>a<br>1 TING TOTTI TT ETT<br>ee Ae<br>PICT<br>A<br>PTT ae<br>0.1 cn<br>10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Pulse Power Dissipation<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

MMBTA05 / MMBTA06 Document number: DS30037 Rev. 14 - 2 

November 2013 © Diodes Incorporated 

**MMBTA05 / MMBTA06** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**||||||
|Collector-Base Breakdown Voltage<br>MMBTA05<br>MMBTA06|BVCBO|60<br>80||V|IC= 100µA, IE= 0|
|Collector-Emitter Breakdown Voltage (Note 10)<br>MMBTA05<br>MMBTA06<br>~~ee~~|BVCEO<br>~~ee~~|60<br>80<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|IC= 10.0mA, IB= 0<br>~~ee~~|
|Emitter-Base Breakdown Voltage<br>~~ee~~|BVEBO<br>~~ee~~|4.0<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|IE= 100µA,IC= 0<br>~~ee~~|
|Collector Cutoff Current<br>MMBTA05<br>MMBTA06|ICBO||100|nA|VCB= 60V, IE= 0<br>VCB= 80V,IE= 0|
|Collector Cutoff Current<br>MMBTA05<br>MMBTA06<br>~~a~~|ICES<br>~~a~~|<br>~~a~~|100<br>~~a~~|nA<br>~~a~~|VCE= 60V, IBO= 0V<br>VCE= 80V,IBO= 0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 10)**<br>~~eeee~~||||||
|DC Current Gain<br>~~ee~~|hFE<br>~~ee~~|100<br>~~ee~~|<br>|<br>~~ee~~|IC= 10mA, VCE= 1.0V<br>IC= 100mA,VCE= 1.0V<br>~~ee~~|
|Collector-Emitter Saturation Voltage<br>~~ee~~|VCE(sat)<br>~~ee~~|<br>~~ee~~|0.25<br>|V<br>~~ee~~|IC= 100mA,IB= 10mA<br>~~ee~~|
|Base-Emitter Saturation Voltage<br>~~ee~~|VBE(sat)<br>~~ee~~|<br>~~ee ~~|1.2<br>|V<br> ~~ee~~|IC= 100mA,VCE= 1.0V<br>~~ee~~|
|**SMALL SIGNAL CHARACTERISTICS**||||||
|Current Gain-Bandwidth Product|fT|100||MHz|VCE= 2.0V,IC= 10mA,f = 100MHz|



Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 

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**MMBTA05 / MMBTA06** 

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10,000 0.50<br>VCE = 5V 0.45 I C<br>EE HEE eH t= EH IB [= 10] ee al<br>1,000 TA = 150°C 0.40<br>0.35<br>0.30<br>Semone ema een a TA = 25°C<br>100 NI TA = -50°C TA = 25°C 0.25 el TA = 150°C<br>SS t t aN 0.20 |<br>0.15<br>10 Se | 8 All|<br>SS = 0.10 Se<br>EE Aa<br>1 ee 0.050 Sart T A  = -50°C<br>1 10 100 1,000 1 10 100 1,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 1 Typical DC Current Gain vs. Collector Current Figure 2 Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>1.0 1,000<br>VCE = 5V VCE = 5V<br>0.9 ee I l —— _———<br>0.8<br>A TA = -50°C —— eel s<br>0.7 100<br>TT Le e<br>0.6 TA = 25°C<br>esl ———<br>0.5<br>TT ee ee ee oe or<br>0.4 T A  = 150°C 10<br>0.3 OT eae ee |<br>meal eet Il ———<br>0.20.1 eea | 1 eee r<br>a ll ee eee<br>0.1 1 10 100 1 10<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3 Typical Base-Emitter Turn-On Voltage  Figure 4 Typical Gain Bandwidth Product vs. Collector Current<br>vs. Collector Current<br>10 2.0<br>SS VCB = 80V SSSA 1.8 TMM TTT<br>1.6 IC = 30mA<br>S S an mma a<br>1.4 |<br>1 OK ne [a]<br>A 1.2<br>IC = 1mA<br>1.0 IC = 10mA<br>ee ae 0.8 on IC = 100mA<br>0.1<br>eeoaee e 0.6 Bill Hy ( HIT<br>> \<br>0.4<br>0.2<br>ee ee AANA<br>0.01 0<br>ee ee ee RARA<br>25 50 75 100 125 0.001 0.01 0.1 1 10 100<br>TA, AMBIENT TEMPERATURE (ºC) IB [,]  BASE CURRENT (mA)<br>Figure 5  Typical Collector-Cutoff Current Figure 6  Typical Collector Saturation Region<br>vs. Ambient Temperature<br>, COLLECTOR-EMITTER<br>, DC CURRENT GAIN<br>SATURATION VOLTAGE (V)<br>FE CE(SAT)<br>h V<br>, BASE-EMITTER TURN-ON VOLTAGE (V) , GAIN BANDWIDTH PRODUCT (MHz)<br>fT<br>BE(ON)<br>V<br>, COLLECTOR-BASE CURRENT (nA) , COLLECTOR EMITTER VOLTAGE (V)<br>ICBO VCE<br>**----- End of picture text -----**<br>


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**www.diodes.com** 

**MMBTA05 / MMBTA06** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

**==> picture [406 x 378] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>B  1.20  1.40  1.30<br>C  2.30  2.50  2.40<br>D  0.89  1.03  0.915<br>F  0.45  0.60  0.535<br>G  1.78  2.05  1.83<br>Nese, —ESE H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>===<br>K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>L1  0.25  0.55  0.40<br>ooo aa M  0.085 0.150  0.110<br>rl m i a a 8°<br>| [Cid] All Dimensions in mm<br>yout out<br>Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.<br>Y<br>Dimensions Value (in mm)<br>Z  2.9<br>Z ath C X  0.8<br>Y  0.9<br>C  2.0<br>E  1.35<br>X E<br>=aa<br>All7°<br>H<br>J<br>K 1 K<br>a<br>A M<br>L L1<br>C B<br>D<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout out** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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MMBTA05 / MMBTA06 Document number: DS30037 Rev. 14 - 2 

November 2013 © Diodes Incorporated 

**MMBTA05 / MMBTA06** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2013, Diodes Incorporated 

**www.diodes.com** 

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MMBTA05 / MMBTA06 Document number: DS30037 Rev. 14 - 2 

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---

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