# Bipolar (BJT) Single Transistor, Darlington, NPN, 40 V, 500 mA, 225 mW, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:1459110/) **URL**: https://novapart.co/products/MMBT6427LT1G/bipolar-bjt-single-transistor-darlington-npn-40-v **SKU**: MMBT6427LT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0670 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Qualification | AEC-Q101 | | Power Dissipation | 225mW | | Dc Current Gain Hfe | 200hFE | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transistor Case Style | SOT-23 | | Dc Current Gain Hfe Min | 200hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 500mA | | Collector Emitter Voltage Max | 40V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1459110/) ## MMBT6427LT1G, SMMBT6427LT1G ## Darlington Transistor ## **NPN Silicon** ## **Features** **http://onsemi.com** - AEC−Q101 Qualified and PPAP Capable - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* **SOT−23 (TO−236) CASE 318 MAXIMUM RATINGS STYLE 6** **Rating Symbol Value Unit** COLLECTOR 3 Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 40 Vdc BASE 1 Emitter−Base Voltage VEBO 12 Vdc Collector Current − Continuous IC 500 mAdc ~~=~~ EMITTER 2 **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM** Total Device Dissipation FR−5 Board, PD (Note 1) TA = 25C 225 mW Derate above 25C 1.8 mW/C 1V M Thermal Resistance, Junction−to−Ambient R JA 556 C/W Total Device Dissipation Alumina Substrate, PD 1 (Note 2) TA = 25C 300 mW Derate above 25C 2.4 mW/C 1V = Device Code Thermal Resistance, Junction−to−Ambient R JA 417 C/W M = Date Code* Junction and Storage Temperature TJ, Tstg −55 to +150 C = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum ~~——~~ Ratings are stress ratings only. Functional operation above the Recommended ~~ee~~ (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. *Date Code orientation and/or overbar may vary depending upon manufacturing location. **ORDERING INFORMATION** 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. **Device Package Shipping**[†] MMBT6427LT1G SOT−23 3,000 Tape & Reel (Pb−Free) SMMBT6427LT1G SOT−23 3,000 Tape & Reel (Pb−Free) ~~Ff~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MMBT6427LT1/D** **1**  Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. 4** ## **MMBT6427LT1G, SMMBT6427LT1G** ## **ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |---|---|---|---|---| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Breakdown Voltage
(IC= 10 mAdc, VBE= 0)|V(BR)CEO|40|−|Vdc| |Collector−Base Breakdown Voltage
(IC= 100�Adc, IE= 0)|V(BR)CBO|40|−|Vdc| |Emitter−Base Breakdown Voltage
(IC= 10�Adc, IC= 0)|V(BR)EBO|12|−|Vdc| |Collector Cutoff Current
(VCE= 25 Vdc, IB= 0)|ICES|−|1.0|�Adc| |Collector Cutoff Current
(VCB= 30 Vdc, IE= 0)|ICBO|−|50|nAdc| |Emitter Cutoff Current
(VEB= 10 Vdc, IC= 0)|IEBO|−|50|nAdc| |**ON CHARACTERISTICS**||||| |DC Current Gain
(IC= 10 mAdc, VCE= 5.0 Vdc)
(IC= 100 mAdc, VCE= 5.0 Vdc)
(IC= 500 mAdc, VCE= 5.0 Vdc)|hFE|10,000
20,000
14,000|100,000
200,000
140,000|−| |Collector−Emitter Saturation Voltage
(IC= 50 mAdc, IB= 0.5 mAdc)
(IC= 500 mAdc, IB= 0.5 mAdc)|VCE(sat)(3)|−
−|1.2
1.5|Vdc| |Base−Emitter Saturation Voltage
(IC= 500 mAdc, IB= 0.5 mAdc)|VBE(sat)|−|2.0|Vdc| |Base−Emitter On Voltage
(IC= 50 mAdc, VCE= 5.0 Vdc)|VBE(on)|−|1.75|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**||||| |Output Capacitance
(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)|Cobo|−|7.0|pF| |Input Capacitance
(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)|Cibo|−|15|pF| |CurrentGain − High Frequency
(IC= 10 mAdc, VCE= 5.0 Vdc, f = 100 MHz)||hfe||1.3|−|Vdc| |Noise Figure
(IC= 1.0 mAdc, VCE= 5.0 Vdc, RS= 100 k�, f = 1.0 kHz)|NF|−|10|dB| |3. Pulse Test: Pulse Width = 300�s, Duty Cycle = 2.0%.||||| **==> picture [181 x 125] intentionally omitted <==** **----- Start of picture text -----**
RS
in
en
IDEAL
TRANSISTOR
**----- End of picture text -----**
**Figure 1. Transistor Noise Model** **http://onsemi.com** **2** **MMBT6427LT1G, SMMBT6427LT1G** ## **NOISE CHARACTERISTICS** (VCE = 5.0 Vdc, TA = 25C) **==> picture [491 x 383] intentionally omitted <==** **----- Start of picture text -----**
500 2.0
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
RS  0 1.0
200
0.7
0.5
100 IC = 1.0 mA
10 �A 0.3
50 0.2
100 �A 0.1 100 �A
20
0.07
I C = 1.0 mA 0.05 10 �A
10
0.03
5.0 0.02
10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k 10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)
Figure 2. Noise Voltage Figure 3. Noise Current
200 14
BANDWIDTH = 10 Hz TO 15.7 kHz
12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
10
70 IC = 10 �A 10 �A
8.0
50
100 �A
6.0
30 100 �A
4.0 IC = 1.0 mA
20
1.0 mA
2.0
10 0
1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000
RS, SOURCE RESISTANCE (k�) RS, SOURCE RESISTANCE (k�)
en, NOISE VOLTAGE (nV) in, NOISE CURRENT (pA)
NF, NOISE FIGURE (dB)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
**----- End of picture text -----**
**Figure 4. Total Wideband Noise Voltage** **Figure 5. Wideband Noise Figure** **http://onsemi.com** **3** **MMBT6427LT1G, SMMBT6427LT1G** ## **SMALL−SIGNAL CHARACTERISTICS** **==> picture [491 x 594] intentionally omitted <==** **----- Start of picture text -----**
20 4.0
V CE = 5.0 V
 f = 100 MHz
10 TJ = 25 C 2.0 TJ = 25  C
7.0 Cibo
1.0
5.0 Cobo 0.8
0.6
3.0 0.4
2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 6. Capacitance Figure 7. High Frequency Current Gain
200�k 3.0
TJ = 125  C TJ = 25  C
100�k
2.5
70�k50�k 25  C IC = 10 mA 50 mA 250 mA 500 mA
30�k 2.0
20�k
1.5
10�k
7.0�k -�55  C
5.0�k 1.0
V CE = 5.0 V
3.0�k
2.0�k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (�A)
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
1.6 -�1.0
TJ = 25  C *APPLIES FOR IC/IB  hFE/3.0 25  C TO 125  C
1.4 -�2.0 *R�VC FOR VCE(sat)
VBE(sat) @ IC/IB = 1000 -�55  C TO 25  C
1.2 -�3.0
VBE(on) @ VCE = 5.0 V 25  C TO 125  C
1.0 -�4.0
�VB FOR VBE
0.8 -�5.0 -�55  C TO 25  C
VCE(sat) @ IC/IB = 1000
0.6 -�6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
|hfe|, SMALL-SIGNAL CURRENT GAIN
hFE, DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
C) 
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/

R
**----- End of picture text -----**
**Figure 10. “On” Voltages** **Figure 11. Temperature Coefficients** **http://onsemi.com** **4** **MMBT6427LT1G, SMMBT6427LT1G** **==> picture [490 x 171] intentionally omitted <==** **----- Start of picture text -----**
1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2
0.05 SINGLE PULSE
0.1
0.1
0.07 SINGLE PULSE
0.05
0.03 Z�JC(t) = r(t)  R�JC�TJ(pk) - TC = P(pk) Z�JC(t)
0.02 Z� JA(t) = r(t)  R� JA �T J(pk) - T A = P (pk) Z� JA(t)
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k
t, TIME (ms)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
**----- End of picture text -----**
**Figure 12. Thermal Response** **==> picture [142 x 163] intentionally omitted <==** **----- Start of picture text -----**
FIGURE A
t P
PP PP
t1
1/f
DUTY�CYCLE � t1�f � [t][1]
tP
PEAK PULSE POWER = PP
**----- End of picture text -----**
**Design Note: Use of Transient Thermal Resistance Data** **http://onsemi.com 5** **MMBT6427LT1G, SMMBT6427LT1G** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AP **==> picture [188 x 39] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
**----- End of picture text -----**
|||||||||||||**D**|**D**||||||||||||||||||||||||2.|CONTROLLING DIMENSION: INCH.|CONTROLLING DIMENSION: INCH.||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||**3**||||||||||**SEE VIEW C**||**SEE VIEW C**||**SEE VIEW C**||||||||||||3.
4.|MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS,OR GATE BURRS.|||| ||**E**||||||||||||||||||**H**|**E**||||||||||||||||||**DIM**
**MIN**
**NOM**
**MAX**
**MILLIMETERS**|**MIN**|**INCHES**
**NOM**|**MAX**| |||||||||||**1**||||**2**||||||||||||||||||||**c**||||**A**
0.89
1.00
1.11
**A1**
0.01
0.06
0.10
**b**
0.37
0.44
0.50|0.035
0.001
0.015|0.040
0.002
0.018|0.044
0.004
0.020| |||||||||||||**e**||||||**b**||||||||||||||||0.25||||**c**
0.09
0.13
0.18
**D**
2.80
2.90
3.04|0.003
0.110|0.005
0.114|0.007
0.120| |||||||||||||||||||||||||||||||||||||||**E**
1.20
1.30
1.40|0.047|0.051|0.055| |||||||||||||||||||||||||||||||||||||||**e**
1.78
1.90
2.04|0.070|0.075|0.081| |||||||||||||||||||||||||||||||||||||||**L**
0.10
0.20
0.30|0.004|0.008|0.012| |**A**||||||||||||||||||||||||||||||||||||||**L1**
2.10
2.40
2.64
**HE**
0.35
0.54
0.69|0.083
0.014|0.094
0.021|0.104
0.029| ||**A1**|||||||||||||||||||||||||||**L1**|||**L**|||||||0
−−−
10


STYLE 6:
PIN 1.
BASE|0
|−−−|10
| |||||||||||||||||||||||||||||**VIEW C**||||||||||2.
EMITTER
3.
COLLECTOR|||| ## **SOLDERING FOOTPRINT** **==> picture [157 x 144] intentionally omitted <==** **----- Start of picture text -----**
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1 mm
= (— inches )
0.8
0.031 be
**----- End of picture text -----**
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