# Bipolar (BJT) Single Transistor, NPN, 160 V, 60 mA, 265 mW, SOT-723, Surface Mount ![Product image](https://novapart.co/image/farnell:2727983/) **URL**: https://novapart.co/products/MMBT5551M3T5G/bipolar-bjt-single-transistor-npn-160-v-60-ma-265 **SKU**: MMBT5551M3T5G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0240 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:265mW; DC Collector Current:60mA; DC Current Gain hFE:30hFE; Transi ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 265mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | - | | Transistor Case Style | SOT-723 | | Dc Current Gain Hfe Min | 30hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 60mA | | Collector Emitter Voltage Max | 160V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2727983/) ## MMBT5551M3 ## NPN High Voltage Transistor The MMBT5551M3 device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose high voltage applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. ## **www.onsemi.com** **==> picture [430 x 91] intentionally omitted <==** **----- Start of picture text -----**
Features COLLECTOR
3
• Reduces Board Space
• NSV Prefix for Automotive and Other Applications Requiring 1
Unique Site and Control Change Requirements; AEC−Q101 BASE
Qualified and PPAP Capable
@
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 2
Compliant EMITTER
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**MAXIMUM RATINGS** **Rating Symbol Value Unit MARKING DIAGRAM** Collector−Emitter Voltage VCEO 160 Vdc 3 Collector−Base Voltage VCBO 180 Vdc **SOT−723** AH M **CASE 631AA** Emitter−Base Voltage VEBO 6.0 Vdc 2 **STYLE 1** 1 Collector Current − Continuous IC 60 mAdc ~~eo~~ **THERMAL CHARACTERISTICS** AH = Specific Device Code M = Date Code **Characteristic Symbol Max Unit** Total Device Dissipation PD mW FR−5 Board (Note 1) 265 TA = 25 ° C mW/ ° C **ORDERING INFORMATION** Derate above 25 ° C 2.1 ~~TO~~ ° **Device Package Shipping**[[†]] Thermal Resistance, R JA 470 C/W Junction−to−Ambient (Note 1) MMBT5551M3T5G SOT−723 8000 / Tape & Total Device Dissipation PD 640 mW (Pb−Free) Reel Alumina Substrate, (Note 2) TDerate above 25 ° C A = 25 ° C 5.1 mW/ ° C NSVMMBT5551M3T5G SOT−723 8000 / Tape & (Pb−Free) Reel ~~ee~~ Thermal Resistance, Junction−to−Ambient R JA 195 ° C/W ~~_~~ †For information on tape and reel specifications, (Note 2) including part orientation and tape sizes, please Junction and Storage Temperature TJ, Tstg −55 to ° C refer to our Tape and Reel Packaging Specifications +150 Brochure, BRD8011/D. **Device Package Shipping**[[†]] MMBT5551M3T5G SOT−723 8000 / Tape & (Pb−Free) Reel NSVMMBT5551M3T5G SOT−723 8000 / Tape & (Pb−Free) Reel ~~_~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2015 **December, 2015 − Rev. 3** **MMBT5551M3/D** ## **MMBT5551M3** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Breakdown Voltage (Note 3)
(IC= 1.0 mAdc, IB= 0)|V(BR)CEO|160|−|Vdc| |Collector−Base Breakdown Voltage
(IC= 100�Adc, IE= 0)|V(BR)CBO|180|−|Vdc| |Emitter−Base Breakdown Voltage
(IE= 10�Adc, IC= 0)|V(BR)EBO|6.0|−|Vdc| |Collector Cutoff Current
(VCB= 120 Vdc, IE= 0)
(VCB= 120 Vdc, IE= 0, TA= 100°C)|ICBO|−
−|100
100|nAdc
�Adc| |Emitter Cutoff Current
(VEB= 4.0 Vdc, IC= 0)|IEBO|−|50|nAdc| |**ON CHARACTERISTICS**||||| |DC Current Gain
(IC= 1.0 mAdc, VCE= 5.0 Vdc)
(IC= 10 mAdc, VCE= 5.0 Vdc)
(IC= 50 mAdc, VCE= 5.0 Vdc)|hFE|80
80
30|−
250
−|−| |Collector−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)|VCE(sat)|−
−|0.15
0.20|Vdc| |Base−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)|VBE(sat)|−
−|1.0
1.0|Vdc| |Collector Emitter Cut−off
(VCB= 10 V)
(VCB= 75 V)|ICES|−
−|50
100|nA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 � s, Duty Cycle = 2.0%. **www.onsemi.com** **2** **MMBT5551M3** ## **TYPICAL CHARACTERISTICS** **==> picture [486 x 383] intentionally omitted <==** **----- Start of picture text -----**
500
300200 T J = 125°C VV CE CE = 1. = 5.0 V0 V
25°C
100
-�55°C
50
30
20
10
7.0
5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
FE
h , DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
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**Figure 2. Collector Saturation Region** **==> picture [481 x 172] intentionally omitted <==** **----- Start of picture text -----**
10 [1] 1.0
V CE = 30 V TJ = 25°C
10 [0]
0.8
10 [-1] T J = 125°C VBE(sat) @ IC/IB = 10
IC = ICES 0.6
10 [-2] 75°C
0.4
10 [-3] REVERSE FORWARD
25°C 0.2
10 [-4]
VCE(sat) @ IC/IB = 10
10 [-5] 0
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
μ
V, VOLTAGE (VOLTS)
, COLLECTOR CURRENT (��A)
IC
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**Figure 3. Collector Cut−Off Region** **Figure 4. “On” Voltages** **www.onsemi.com** **3** **MMBT5551M3** ## **TYPICAL CHARACTERISTICS** **==> picture [243 x 596] intentionally omitted <==** **----- Start of picture text -----**
2.5
2.0 TJ = -55°C to +135°C
1.5
1.0
0.5 �VC for VCE(sat)
0
-0.5
-1.0
�VB for VBE(sat)
-1.5
-2.0
-2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
100
70 TJ = 25°C
50
30
20
10
7.0 Cibo
5.0
3.0 Cobo
2.0
1.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
5000
3000 tf @ VCC = 120 V T IC J /I = 25 B = 10° C
2000
tf @ VCC = 30 V
1000
500
300 t s @ V CC = 120 V
200
100
50
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IC, COLLECTOR CURRENT (mA)
C)°
V, TEMPERATURE COEFFICIENT (mV/
θ
C, CAPACITANCE (pF)
t, TIME (ns)
**----- End of picture text -----**
**==> picture [195 x 120] intentionally omitted <==** **----- Start of picture text -----**
10.2 V VBB VCC
-�8.8 V 30 V
Vin
100 3.0 k RC
10 �s 0.25 �F RB
INPUT PULSE Vout
5.1 k
tr, tf ≤ 10 ns Vin 100 1N914
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
**----- End of picture text -----**
**Figure 6. Switching Time Test Circuit** **==> picture [240 x 384] intentionally omitted <==** **----- Start of picture text -----**
1000
IC/IB = 10
500 T J = 25°C
300 t r @ V CC = 120 V
200
t r @ V CC = 30 V
100
50 td @ VEB(off) = 1.0 V
30 V CC = 120 V
20
10
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn−On Time
1
1 s 100 ms 10 ms 1 ms 100 � s 10 � s
0.1
0.01
0.001
1 10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
t, TIME (ns)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 9. Turn−Off Time** **Figure 10. Safe Operating Area** **www.onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOT−723** CASE 631AA−01 ISSUE D DATE 10 AUG 2009 **SCALE 4:1** **==> picture [451 x 252] intentionally omitted <==** **----- Start of picture text -----**
−X− NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
D Y14.5M, 1994.
b1 A 2. CONTROLLING DIMENSION: MILLIMETERS.
3 −Y− 3. MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUMFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
E H E 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
1 2
Go 2X b tf MILLIMETERS
C DIM MIN NOM MAX
2X e 0.08 X Y A 0.45 0.50 0.55
SIDE VIEW b 0.15 0.21 0.27
TOP VIEW b1 0.25 0.31 0.37
C 0.07 0.12 0.17
3X L D 1.15 1.20 1.25
1 E 0.75 0.80 0.85
e 0.40 BSC
H E 1.15 1.20 1.25
L 0.29 REF
L2 0.15 0.20 0.25
3X L2 |CU E GENERIC
BOTTOM VIEW MARKING DIAGRAM*
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:
PIN 1. BASE PIN 1. ANODE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE XX M
2. EMITTER 2. N/C 2. ANODE 2. CATHODE 2. SOURCE
3. COLLECTOR 3. CATHODE 3. CATHODE 3. ANODE 3. DRAIN
=
1
XX = Specific Device Code
RECOMMENDED
M = Date Code
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1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 3. MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUMFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. **==> picture [177 x 173] intentionally omitted <==** **----- Start of picture text -----**
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X 0.27
“Ar
PACKAGE
OUTLINE
SAE]
1.50
3X 0.52 aoe 0.36
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON12989D** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−723 PAGE 1 OF 1** ~~SE~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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