# Bipolar (BJT) Single Transistor, General Purpose, NPN, 25 V, 50 mA, 225 mW, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:1653625/) **URL**: https://novapart.co/products/MMBT5089LT1G/bipolar-bjt-single-transistor-general-purpose-npn **SKU**: MMBT5089LT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0320 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:50MHz; Power Dissipation Pd:225mW; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style: ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | MMBTxxxx | | Qualification | AEC-Q101 | | Power Dissipation | 225mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 50MHz | | Transistor Case Style | SOT-23 | | Dc Current Gain Hfe Min | 50hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 50mA | | Collector Emitter Voltage Max | 25V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1653625/) MMBT5088L, MMBT5089L ## Low Noise Transistors ## **NPN Silicon** ## **Features** - S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable ## **www.onsemi.com** - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **==> picture [67 x 27] intentionally omitted <==** **----- Start of picture text -----**
SOT−23 (TO−236)
CASE 318
STYLE 6
**----- End of picture text -----**
**MAXIMUM RATINGS STYLE 6 Rating Symbol Value Unit** COLLECTOR Collector−Emitter Voltage VCEO Vdc 3 MMBT5088L 30 MMBT5089L 25 1 Collector−Base Voltage VCBO Vdc BASE MMBT5088L 35 MMBT5089L 30 2 Emitter−Base Voltage VEBO 4.5 Vdc EMITTER Collector Current − Continuous IC 50 mAdc ~~HH~~ **THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit** Total Device Dissipation FR−5 Board, PD 1x M (Note 1) TA = 25 ° C 225 mW Derate above 25 ° C 1.8 mW/ ° C 1 Thermal Resistance, Junction−to−Ambient R JA 556 ° C/W 1x = Device Code Total Device Dissipation Alumina PD x = Q for MMBT5088L Substrate, (Note 2) TA = 25 ° C 300 mW SMMBT5088L Derate above 25 ° C 2.4 mW/ ° C x = R for MMBT5089L SMMBT5089L Thermal Resistance, Junction−to−Ambient R JA 417 ° C/W M = Date Code* ~~**=**~~ Junction and Storage Temperature TJ ~~F~~ , Tstg −55 to +150 ~~e~~ ° C = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be *Date Code orientation and/or overbar may assumed, damage may occur and reliability may be affected. vary depending upon manufacturing location. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. **ORDERING INFORMATION Device Package Shipping**[†] MMBT5088LT1G, SOT−23 3,000 / Tape & SMMBT5088LT1G (Pb−Free) Reel NSVMMBT5088LT3G SOT−23 10,000 / Tape & (Pb−Free) Reel MMBT5089LT1G, SOT−23 3,000 / Tape & SMMBT5089LT1G (Pb−Free) Reel ~~===~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MMBT5088LT1/D** **1** © Semiconductor Components Industries, LLC, 1994 **October, 2016 − Rev. 6** **MMBT5088L, MMBT5089L** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Breakdown Voltage
(IC= 1.0 mAdc, IB= 0)
MMBT5088L
MMBT5089L|V(BR)CEO|30
25|−
−|Vdc| |Collector−Base Breakdown Voltage
(IC= 100�Adc, IE= 0)
MMBT5088L
MMBT5089L|V(BR)CBO|35
30|−
−|Vdc| |Collector Cutoff Current
(VCB= 20 Vdc, IE= 0)
MMBT5088L
(VCB= 15 Vdc, IE= 0)
MMBT5089L|ICBO|−
−|50
50|nAdc| |Emitter Cutoff Current
(VEB(off)= 3.0 Vdc, IC= 0)
MMBT5088L
(VEB(off)= 4.5 Vdc, IC= 0)
MMBT5089L|IEBO|−
−|50
100|nAdc| |**ON CHARACTERISTICS**||||| |DC Current Gain
(IC= 100�Adc, VCE= 5.0 Vdc)
MMBT5088L
MMBT5089L
(IC= 1.0 mAdc, VCE= 5.0 Vdc)
MMBT5088L
MMBT5089L
(IC= 10 mAdc, VCE= 5.0 Vdc)
MMBT5088L
MMBT5089L|hFE|300
400
350
450
300
400|900
1200
−
−
−
−|−| |Collector−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)|VCE(sat)|−|0.5|Vdc| |Base−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)|VBE(sat)|−|0.8|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**||||| |Current−Gain — Bandwidth Product
(IC= 500�Adc, VCE= 5.0 Vdc, f = 20 MHz)|fT|50|−|MHz| |Collector−Base Capacitance
(VCB= 5.0 Vdc, IE= 0, f = 1.0 MHz emitter guarded)|Ccb|−|4.0|pF| |Emitter−Base Capacitance
(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz collector guarded)|Ceb|−|10|pF| |Small Signal Current Gain
(IC= 1.0 mAdc, VCE= 5.0 Vdc, f = 1.0 kHz)
MMBT5088L
MMBT5089L|hfe|350
450|1400
1800|−| |Noise Figure
(IC= 100�Adc, VCE= 5.0 Vdc, RS= 10 k�, f = 1.0 kHz)
MMBT5088L
MMBT5089L|NF|−
−|3.0
2.0|dB| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **==> picture [182 x 125] intentionally omitted <==** **----- Start of picture text -----**
RS
in
en
IDEAL
TRANSISTOR
**----- End of picture text -----**
**Figure 1. Transistor Noise Model** **www.onsemi.com** **2** **MMBT5088L, MMBT5089L** ## **NOISE CHARACTERISTICS** (VCE = 5.0 Vdc, TA = 25 ° C) ## **NOISE VOLTAGE** **==> picture [489 x 602] intentionally omitted <==** **----- Start of picture text -----**
30 30
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
20 20
IC = 10 mA RS ≈ 0 RS ≈ 0
3.0 mA f = 10 Hz
10 10
100 Hz
1.0 mA
7.0 7.0
10 kHz
1.0 kHz
5.0 5.0
300 �A 100 kHz
3.0 3.0
10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
f, FREQUENCY (Hz) IC, COLLECTOR CURRENT (mA)
Figure 2. Effects of Frequency Figure 3. Effects of Collector Current
10 20
BANDWIDTH = 1.0 Hz
7.0
5.0
IC = 10 mA 16
3.0 BANDWIDTH = 10 Hz to 15.7 kHz
2.0 3.0 mA
12
1.0 mA
1.0
IC = 1.0 mA
0.7 300 �A 8.0 500 �A
0.5
100 �A
0.3 100 �A
4.0 10 �A
0.2
10 �A 30 �A
RS ≈ 0
0.1 0
10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k 10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k
f, FREQUENCY (Hz) RS, SOURCE RESISTANCE (OHMS)
Figure 4. Noise Current Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
300 20
200 BANDWIDTH = 1.0 Hz I C = 10 mA
100 100 �A 16 IC = 10 mA 3.0 mA
70 3.0 mA 1.0 mA
50 12
1.0 mA
30 300 �A 300 �A
20 30 �A 8.0
100 �A
10
7.0 10 �A 4.0 30 �A
10 �A
5.0
BANDWIDTH = 1.0 Hz
3.0 0
10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k 10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k
RS, SOURCE RESISTANCE (OHMS) RS, SOURCE RESISTANCE (OHMS)
en, NOISE VOLTAGE (nV) en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA) NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
VT, TOTAL NOISE VOLTAGE (nV)
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**Figure 6. Total Noise Voltage** **Figure 7. Noise Figure** **www.onsemi.com** **3** **MMBT5088L, MMBT5089L** **==> picture [490 x 610] intentionally omitted <==** **----- Start of picture text -----**
4.0
3.0
VCE = 5.0 V
2.0 TA = 125°C
25°C
1.0
-�55°C
0.7
0.5
0.4
0.3
0.2
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
1.0 -�0.4
TJ = 25°C
0.8 -�0.8
0.6 VBE @ VCE = 5.0 V -�1.2
0.4 -�1.6 TJ = 25°C to 125°C
0.2 -�2.0
-�55°C to 25°C
VCE(sat) @ IC/IB = 10
0 -�2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages Figure 9. Temperature Coefficients
8.0 500
6.0 TJ = 25°C
300
4.0 Cob Ceb Cib
200
3.0
Ccb
2.0
100
1.0 70 VTJCE = 25 = 5.0 V°C
0.8 50
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
FE
h , DC CURRENT GAIN (NORMALIZED)
C)°
VBE, BASE-EMITTER
V, VOLTAGE (VOLTS) Rθ
TEMPERATURE COEFFICIENT (mV/
C, CAPACITANCE (pF)
fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
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**Figure 12. Capacitance** **Figure 10. Current−Gain — Bandwidth Product** **www.onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [494 x 668] intentionally omitted <==** **----- Start of picture text -----**
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
2 DATE 30 JAN 2018
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
“a 3 t = THE BASE MATERIAL.
| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
A L1 0.35 0.54 0.69 0.014 0.021 0.027
H E 2.10 2.40 2.64 0.083 0.094 0.104
= T 0 ° −−− 10 ° 0 ° −−− 10 °
a A1 SIDE VIEW SEE VIEW C c
GENERIC
END VIEW
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT XXXM
1
2.90 i 0.903X XXX = Specific Device Code oo
M = Date Code
= Pb−Free Package
LO | cr ,
*This information is generic. Please refer to
3X 0.80 a) LL 0.95 device data sheet for actual part marking.
PITCH Pb−Free indicator, “G” or microdot “ ”, |
DIMENSIONS: MILLIMETERS may or may not be present.
STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:
CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION
3. COLLECTOR 3. COLLECTOR 3. CATHODE
STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE
STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE
STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION
STYLE 27: STYLE 28:
PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. CATHODE 3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1
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