# Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:2317550/) **URL**: https://novapart.co/products/MMBT4401LT3G/bipolar-bjt-single-transistor-npn-40-v-600-ma-225 **SKU**: MMBT4401LT3G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0210 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:250MHz; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:20hFE; T ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 225mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 250MHz | | Transistor Case Style | SOT-23 | | Dc Current Gain Hfe Min | 20hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 600mA | | Collector Emitter Voltage Max | 40V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2317550/) ## MMBT4401L, SMMBT4401L ## Switching Transistor ## **NPN Silicon** ## **Features** - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable ## **www.onsemi.com** **==> picture [69 x 89] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
3
1
BASE
© )
2
EMITTER
**----- End of picture text -----**
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **MAXIMUM RATINGS** |These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
**MAXIMUM RATINGS**|These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS|These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS|These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS|These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS|These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS||BASE|1
BASE
2
~~©~~)||| |---|---|---|---|---|---|---|---|---|---|---| |**Rating**|**Symbol**||**Value**|**Unit**||||EMITTER||| |Collector−Emitter Voltage|VCEO||40|Vdc||||||| |Collector−Base Voltage
Emitter−Base Voltage|VCBO
VEBO||60
6.0|Vdc
Vdc||||**SOT−23 (TO−236)**
3||| |Collector Current − Continuous|IC||600|mAdc||1||**CASE 318**
**STYLE 6**||| |Collector Current − Peak|ICM||900|mAdc||2||||| |**THERMAL CHARACTERISTICS**||||||||||| |**Characteristic**
**Symbol**
**Max**
**Unit**
~~ee~~|||||||**MARKING DIAGRAM**|||| |Total Device Dissipation FR−5 Board
(Note 1) @TA= 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R JA
556
°C/W
1
2X M
~~OY~~||||||||||| |Total Device Dissipation Alumina|PD|||||||||| |Substrate (Note 2) @TA= 25°C|||300|mW||2X||= Specific Device Code||| |Derate above 25°C|||2.4|mW/°C||M||= Date Code*||| |Thermal Resistance, Junction−to−Ambient|R JA||417|°C/W||= Pb−Free Package
(Note: Microdot may be in either location)||||| |Junction and Storage Temperature|TJ, Tstg||−55 to +150|°C||*Date Code orientation and/or overbar may||*Date Code orientation and/or overbar may||| |Stresses exceeding those listed in the Maximum Ratings table may damage the|Stresses exceeding those listed in the Maximum Ratings table may damage the|Stresses exceeding those listed in the Maximum Ratings table may damage the|Stresses exceeding those listed in the Maximum Ratings table may damage the|Stresses exceeding those listed in the Maximum Ratings table may damage the|Stresses exceeding those listed in the Maximum Ratings table may damage the|vary depending upon manufacturing location.||||| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Transient pulses must not cause the junction temperature to be exceeded. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MMBT4401LT1G
SMMBT4401LT1G|SOT−23
(Pb−Free)|3000 / Tape &
Reel| |MMBT4401LT3G|SOT−23
(Pb−Free)|10,000 / Tape &
Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MMBT4401LT1/D** **1** © Semiconductor Components Industries, LLC, 1994 **October, 2016 − Rev. 11** **MMBT4401L, SMMBT4401L** **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**Characteristic**|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |---|---|---|---|---|---| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage (Note 3)
(IC= 1.0 mAdc, IB= 0)||V(BR)CEO|40|−|Vdc| |Collector−Base Breakdown Voltage|(IC= 0.1 mAdc, IE= 0)|V(BR)CBO|60|−|Vdc| |Emitter−Base Breakdown Voltage|(IE= 0.1 mAdc, IC= 0)|V(BR)EBO|6.0|−|Vdc| |Base Cutoff Current|(VCE= 35 Vdc, VEB= 0.4 Vdc)|IBEV|−|0.1|�Adc| |Collector Cutoff Current|(VCE= 35 Vdc, VEB= 0.4 Vdc)|ICEX|−|0.1|�Adc| |**ON CHARACTERISTICS**(Note 3)|||||| |DC Current Gain|(IC= 0.1 mAdc, VCE= 1.0 Vdc)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0 Vdc)
(IC= 150 mAdc, VCE= 1.0 Vdc)
(IC= 500 mAdc, VCE= 2.0 Vdc)|hFE|20
40
80
100
40|−
−
−
300
−|−| |Collector−Emitter Saturation Voltage|(IC= 150 mAdc, IB= 15 mAdc)
(IC= 500 mAdc, IB= 50 mAdc)|VCE(sat)|−
−|0.4
0.75|Vdc| |Base−Emitter Saturation Voltage|(IC= 150 mAdc, IB= 15 mAdc)
(IC= 500 mAdc, IB= 50 mAdc)|VBE(sat)|0.75
−|0.95
1.2|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product
(IC=|20 mAdc, VCE= 10 Vdc, f = 100 MHz)|fT|250|−|MHz| |Collector−Base Capacitance|(VCB= 5.0 Vdc, IE= 0, f = 1.0 MHz)|Ccb|−|6.5|pF| |Emitter−Base Capacitance|(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)|Ceb|−|30|pF| |Input Impedance
(IC|= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hie|1.0|15|k�| |Voltage Feedback Ratio
(IC|= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hre|0.1|8.0|X 10−4| |Small−Signal Current Gain
(IC|= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hfe|40|500|−| |Output Admittance
(IC|= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hoe|1.0|30|�mhos| |**SWITCHING CHARACTERISTICS**|||||| |Delay Time|(VCC= 30 Vdc, VEB= 2.0 Vdc,
IC= 150 mAdc, IB1= 15 mAdc)|td|−|15|ns| |Rise Time||tr|−|20|| |Storage Time|(VCC= 30 Vdc, IC= 150 mAdc,
IB1= IB2= 15 mAdc)|ts|−|225|ns| |Fall Time||tf|−|30|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. ## **SWITCHING TIME EQUIVALENT TEST CIRCUITS** **==> picture [476 x 105] intentionally omitted <==** **----- Start of picture text -----**
+�30 V +�30 V
1.0 to 100 �s, 200 � 1.0 to 100 �s, 200 �
+16 V DUTY CYCLE ≈ 2.0% +16 V DUTY CYCLE ≈ 2.0%
0
0
-�2.0 V < 2.0 ns 1.0 k� CS* < 10 pF -14 V < 20 ns 1.0 k� CS* < 10 pF
Scope rise time < 4.0 ns -�4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
**----- End of picture text -----**
**Figure 1. Turn−On Time** **Figure 2. Turn−Off Time** **www.onsemi.com** **2** **MMBT4401L, SMMBT4401L** ## **TRANSIENT CHARACTERISTICS** **==> picture [488 x 616] intentionally omitted <==** **----- Start of picture text -----**
25°C 100°C
10
7.0
VCC = 30 V
5.0
IC/IB = 10
3.0
2.0 QT
1.0
0.7
0.5
0.3
0.2 QA
0.1
10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 3. Charge Data
100 100
70 IC/IB = 10 70 VCC = 30 V
tr IC/IB = 10
50 50
tr @ VCC = 30 V
30 tr @ VCC = 10 V 30 tf
td @ VEB = 2.0 V
20 td @ VEB = 0 20
10 10
7.0 7.0
5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 4. Turn−On Time Figure 5. Rise and Fall Times
300 100
ts′ = ts - 1/8 tf 70 VCC = 30 V
200 IB1 = IB2 IB1 = IB2
IC/IB = 10 to 20 50 IC/IB = 20
30
100
20 IC/IB = 10
70
50 10
7.0
30 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Q, CHARGE (nC)
t, TIME (ns) t, TIME (ns)
tf , FALL TIME (ns)
′
ts, STORAGE TIME (ns)
**----- End of picture text -----**
**Figure 6. Storage Time** **Figure 7. Fall Time** **www.onsemi.com** **3** **MMBT4401L, SMMBT4401L** ## **SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE** VCE = 10 Vdc, TA = 25 ° C; Bandwidth = 1.0 Hz **==> picture [489 x 623] intentionally omitted <==** **----- Start of picture text -----**
10 10
IC = 1.0 mA, RS = 150 � f = 1.0 kHz
8.0 IC = 500 �A, RS = 200 � RS = OPTIMUM 8.0
IC = 100 �A, RS = 2.0 k� RS = SOURCE IC = 50 �A
IC = 50 �A, RS = 4.0 k� RS = RESISTANCE IC = 100 �A
6.0 6.0 IC = 500 �A
IC = 1.0 mA
4.0 4.0
2.0 2.0
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k 20�k 50�k 100�k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)
Figure 8. Frequency Effects Figure 9. Source Resistance Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25 ° C
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtainfe and other “h” parameters for this series of transistors. To obtain and other “h” parameters for this series of transistors. To obtain
these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
50�k
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
20�k
10�k
5.0�k
2.0�k
1.0�k
500
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 10. Input Impedance
10 100
7.0
50
5.0
MMBT4401LT1 UNIT 1
3.0 MMBT4401LT1 UNIT 2
20
2.0
10
1.0 MMBT4401LT1 UNIT 1
5.0
0.7 MMBT4401LT1 UNIT 2
0.5
2.0
0.3
0.2 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)
hie, INPUT IMPEDANCE (OHMS)
-4
�
oe
h , OUTPUT ADMITTANCE ( mhos)
re
h , VOLTAGE FEEDBACK RATIO (X 10 )
**----- End of picture text -----**
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtainfe and other “h” parameters for this series of transistors. To obtain and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. **Figure 12. Output Admittance** **Figure 11. Voltage Feedback Ratio** **www.onsemi.com** **4** **MMBT4401L, SMMBT4401L** **==> picture [134 x 9] intentionally omitted <==** **----- Start of picture text -----**
STATIC CHARACTERISTICS
**----- End of picture text -----**
**==> picture [487 x 626] intentionally omitted <==** **----- Start of picture text -----**
500
450 TJ = 150°C V V CE CE = 5.0 V = 2.0 V
400
VCE = 1.0 V
350
25°C
300
250
200 -�55°C
150
100
50
0
0.01 0.1 1
IC, COLLECTOR CURRENT (A)
Figure 13. DC Current Gain
1.2
1.0
0.8
IC = 1.0 mA 10 mA 100 mA 300 mA 500 mA
0.6
0.4
0.2
0
0.001 0.01 0.1 1 10 100
IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
0.35 +�0.5
IC/IB = 10
0.30 0 �VC for VCE(sat)
0.25
150°C -�0.5
0.20
-�1.0
0.15 25°C
-�1.5
0.10
-55°C
0.05 -�2.0 �VB for VBE
0 -�2.5
0.0001 0.001 0.01 0.1 1 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)
Figure 15. Collector−Emitter Saturation Figure 16. Temperature Coefficients
Voltage vs. Collector Current
FE
h , DC CURRENT GAIN
CE
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
C)°
COEFFICIENT (mV/
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
**----- End of picture text -----**
**www.onsemi.com** **5** **MMBT4401L, SMMBT4401L** ## **STATIC CHARACTERISTICS** **==> picture [490 x 388] intentionally omitted <==** **----- Start of picture text -----**
1.1 1.0
IC/IB = 10 VCE = 2.0 V
1.0 0.9
0.9 −55 ° C
0.8
−55 ° C
0.8
0.7
0.7 25 ° C
25 ° C 0.6
0.6
0.5
0.5
0.4 150 ° C 0.4 150 ° C
0.3 0.3
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 17. Base−Emitter Saturation Voltage vs. Figure 18. Base−Emitter Turn On Voltage vs.
Collector Current Collector Current
21 8.5
7.5
19
6.5
17
5.5
15
4.5
13
3.5
11
2.5
9 1.5
0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 40 45 50
Veb, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V)
VOLTAGE (V)
, BASE−EMITTER SATURA- TION VOLTAGE (V) , BASE−EMITTER TURN ON
BE(sat) BE(on)
V V
, INPUT CAPACITANCE (pF)
, OUTPUT CAPACITANCE (pF)
ibo
C obo
C
**----- End of picture text -----**
**Figure 19. Input Capacitance vs. Emitter Base Voltage** **Figure 20. Output Capacitance vs. Collector Base Voltage** **==> picture [244 x 173] intentionally omitted <==** **----- Start of picture text -----**
1
10 msec
1 sec
0.1
0.01
0.001
1 10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 21. Safe Operating Area** **==> picture [241 x 176] intentionally omitted <==** **----- Start of picture text -----**
1000
VCE = 1.0 V
TA = 25 ° C
100
10
0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA)
, CURRENT−GAIN−BANDWIDTH (MHz)
fT
**----- End of picture text -----**
**Figure 22. Current−Gain−Bandwidth Product** **www.onsemi.com** **6** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [494 x 668] intentionally omitted <==** **----- Start of picture text -----**
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
2 DATE 30 JAN 2018
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
“a 3 t = THE BASE MATERIAL.
| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
A L1 0.35 0.54 0.69 0.014 0.021 0.027
H E 2.10 2.40 2.64 0.083 0.094 0.104
= T 0 ° −−− 10 ° 0 ° −−− 10 °
a A1 SIDE VIEW SEE VIEW C c
GENERIC
END VIEW
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT XXXM
1
2.90 i 0.903X XXX = Specific Device Code oo
M = Date Code
= Pb−Free Package
LO | cr ,
*This information is generic. Please refer to
3X 0.80 a) LL 0.95 device data sheet for actual part marking.
PITCH Pb−Free indicator, “G” or microdot “ ”, |
DIMENSIONS: MILLIMETERS may or may not be present.
STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:
CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION
3. COLLECTOR 3. COLLECTOR 3. CATHODE
STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE
STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE
STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION
STYLE 27: STYLE 28:
PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. CATHODE 3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1
aes
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