# Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 310 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2061459RL/)

**URL**: https://novapart.co/products/MMBT4401-7-F/bipolar-bjt-single-transistor-npn-40-v-600-ma-310
**SKU**: MMBT4401-7-F
**Manufacturer**: DIODES INC.
**Price**: €0.0260
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:-; Power Dissipation Pd:300mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transisto

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 310mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 250MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 600mA |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2061459RL/)

**MMBT4401** CCi«d| **40V NPN SMALL SIGNAL TRANSISTOR IN SOT23** 

## **Features** 

- Epitaxial Planar Die Construction 

- Ideal for Medium Power Amplification and Switching 

- Complementary PNP Type: MMBT4403 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Package: SOT23 

- Package material: molded Plastic “Green” Compound UL Flammability Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

- Weight: 0.008 grams (Approximate) 

**==> picture [40 x 139] intentionally omitted <==**

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SOT23<br>Top View<br>**----- End of picture text -----**<br>


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C<br>E<br>B C<br>B<br>E<br>Top View<br>Device Symbol  Pin-Out<br>**----- End of picture text -----**<br>


**Ordering Information** (Note 4) **Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel** MMBT4401-7-F Standard K2X 7 8 3,000 ~~——————_—————~~ MMBT4401-13-F Standard K2X 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

|Date Code Key<br>**Year**<br>**2010**<br>**……**<br>**2021**<br>**Code**<br>X<br>……<br>I<br>**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Code**<br>1<br>2<br>3<br>**K2X**<br>|<br>~~{>} —}—~~<br>~~|} —_ ~~<br>~~/_—}—}—}+~~|**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>J<br>K<br>L<br>M<br>N<br>O<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>4<br>5<br>6<br>7<br>8<br>9<br>**YM**<br>K2X = Product Type Marking Code<br>YM = Date Code Marking<br>Y or Y = Year (ex: I = 2021)<br>M or M = Month (ex: 9 = September)<br>~~:~~<br> ~~| —}—} —_}—}— ~~<br>~~—}—}—_+~~|**2028**<br>**2029**<br>P<br>R<br>**Oct**<br>**Nov**<br>O<br>N<br> ~~} |~~<br>~~+—}+—_~~|**2030**<br>S<br>**Dec**<br>D<br>~~| —_~~|
|---|---|---|---|



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MMBT4401 Document Number: DS30039  Rev. 18 - 2 

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**MMBT4401** 

## **Absolute Maximum Ratings** (@ TA = +25°C unless otherwise specified) 

|**Absolute Maximum Ratingsgss** (@ TA = +25°C unless otherwise specified)@ TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)|(@ TA = +25°C unless otherwise specified)@ TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)pecified)ecified))|||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Collector-Base Voltage|VCBO|60|V|
|Collector-Emitter Voltage|VCEO|40|V|
|Emitter-Base Voltage|VEBO|6.0|V|
|Collector Current|IC|600|mA|
|Peak Collector Current|ICM|1|A|
|Peak Base Current|IBM|200|mA|



## **Thermal Characteristics** (@TA = +25°C unless otherwise specified) 

|**Thermal Characteristics **(@TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)|**Thermal Characteristics **(@TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)|**Thermal Characteristics **(@TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)|**Thermal Characteristics **(@TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)|**Thermal Characteristics **(@TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 5)|PD|310|mW|
||(Note 6)||350||
|Thermal Resistance, Junction to Ambient|(Note 5)|RθJA|403|C/W|
||(Note 6)||357||
|Thermal Resistance, Junction to Leads|(Note 7)|RθJL|350|C/W|
|Thermal Resistance, Junction to Case|(Note 5)|RθJC|120|C/W|
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|C|



## **ESD Ratings** (Note 8) 

|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

6. Same as note (5), except the device is mounted on 15 mm x 15mm 1oz copper. 

7. Thermal resistance from junction to solder-point (at the end of the leads). 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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MMBT4401 Document Number: DS30039  Rev. 18 - 2 

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**MMBT4401** 

## **Thermal Characteristics and Derating Information** 

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**----- Start of picture text -----**<br>
0.4<br>ft} |] tt tty} td<br>0.3 Pr} NE\ EE tt. EE<br>BaalIN<br>0.2 Tt| || |tT || LINENCE\ ELLLLdL<br>0.1 CECE NANCE<br>r | | | | ty tLN\INGE<br>0.0 SRR A N S IN<br>0 25 50 75 100 125 150<br> Temperature (°C)<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


**Derating Curve** 

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10<br>Single Pulse. Tamb=25°C<br>Sait<br>NO nn<br>LPAI TN EEE TT<br>1 a<br>EHH SNES EH SHH<br>aEea<br>PCr Ce CTT<br>sss<br>0.1<br>10m 100m 1 10 100 1k<br>Pulse Width (s)<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


**Pulse Power Dissipation** 

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400<br>350 a a | || ||<br>300 aPEINET TAINCIEEeeTTI eeETNTN a| gaanester |UTUI<br>250 aa a ae|<br>D=0.5<br>200150 TNELTSeLINIPT D=0.1 eSLMTeee | re|AE|CITI|| | | TH<br>100 HHI D=0.2 wusHAA Single Pulse il<br>50 aTBeeDS! QUTAll oal l l<br>D=0.05<br>0 cetaOTeee eanti SN II a e|<br>100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Transient Thermal Impedance<br>1 VLimited CE(sat) le 75µs<br>[BR<br>APE SNORE OA<br>100m DC<br>ae Sef |SAAN<br>———— ae 1s =,<br>===Pr 100ms iCTE Ash,<>NINwee<br>10m Single Pulse —— 10ms 1ms INA<br>Tamb=25°C 100µs<br>15mm x 15mm 1oz Copper Board<br>1m<br>100m 1 10<br>-VCE  Collector-Emitter Voltage (V)<br>Safe Operating Area<br>  Collector Current (A)<br>C<br>-I<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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**www.diodes.com** 

**MMBT4401** 

## **Electrical Characteristics** (@ TA = +25°C unless otherwise specified) 

|**Electrical Characteristics** (@ TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)|**Electrical Characteristics** (@ TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)|**Electrical Characteristics** (@ TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)|**Electrical Characteristics** (@ TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)|**Electrical Characteristics** (@ TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)|**Electrical Characteristics** (@ TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**<br>~~Cn~~||||||
|Collector-Base Breakdown Voltage<br>~~a~~|BVCBO<br>~~a~~|60<br>~~a~~|<br>~~a~~|V<br>~~a~~|IC= 100μA, IE= 0<br>~~a~~|
|Collector-Emitter Breakdown Voltage(Note 9)<br>~~a~~|BVCEO<br>~~a~~|40<br>~~a~~|<br>~~a~~|V<br>~~a~~|IC= 10.0mA, IB= 0<br>~~a~~|
|Emitter-Base Breakdown Voltage<br>~~a~~|BVEBO<br>~~a~~|6.0<br>~~a~~|<br>~~a~~|V<br>~~a~~|IE= 100μA, IC= 0<br>~~a~~|
|Collector Cutoff Current<br>~~re~~|ICEX<br>~~re~~|<br>~~re~~|100<br>~~re~~|nA<br>~~re~~|VCE= 35V, VEB(OFF)= 0.4V<br>~~re~~|
|Base Cutoff Current<br>~~eee~~|IBL<br>~~eee~~|<br>~~eee~~|100<br>~~eee~~|nA<br>~~eee~~|VCE= 35V, VEB(OFF)= 0.4V<br>~~eee~~|
|**ON CHARACTERISTICS(Note 9)**<br>~~eee~~||||||
|DC Current Gain|hFE<br>~~ee~~|20<br>40<br>80<br>100<br>40<br>~~ee~~|<br><br><br>300<br>||IC=  100µA, VCE= 1.0V<br>IC=  1.0mA, VCE= 1.0V<br>IC=  10mA, VCE= 1.0V<br>IC= 150mA, VCE= 1.0V<br>IC= 500mA, VCE= 2.0V|
|Collector-Emitter Saturation Voltage<br>~~ee~~|VCE(sat)<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|0.40<br>0.75<br>~~ee~~|V<br>~~ee~~|IC= 150mA, IB= 15mA<br>IC= 500mA, IB= 50mA<br>~~ee~~|
|Base-Emitter Saturation Voltage|VBE(sat)<br>~~ee ~~|0.75<br><br> ~~ee~~|0.95<br>1.2|V|IC= 150mA, IB= 15mA<br>IC= 500mA, IB= 50mA|
|**SMALL SIGNAL CHARACTERISTICS**<br>~~Cn~~||||||
|Output Capacitance<br>~~a~~|Ccb<br>~~a~~|<br>~~a~~|6.5<br>~~a~~|pF<br>~~a~~|VCB= 5.0V, f = 1.0MHz, IE= 0<br>~~a~~|
|Input Capacitance<br>~~ee~~<br>~~or~~|Ceb<br>~~ee~~<br>~~or~~|<br>~~ee~~<br>~~or~~|30<br>~~ee~~<br>~~or~~|pF<br>~~ee~~<br>~~or~~|VEB= 0.5V, f = 1.0MHz, IC= 0<br>~~ee~~<br>~~oe~~|
|Input Impedance<br>~~or~~|hie<br>~~or~~|1.0<br>~~or~~|15<br>~~or~~|kΩ<br>~~or~~|VCE= 10V, IC= 1.0mA,<br>f = 1.0kHz<br>~~oe~~|
|Voltage Feedback Ratio<br>~~or~~|hre<br>~~or~~|0.1<br>~~or~~|8.0<br>~~or~~|x 10-4<br>~~or~~||
|Small Signal Current Gain<br>~~or~~<br>~~ee~~|hfe<br>~~or~~<br>~~ee~~|40<br>~~or~~<br>~~ee~~|500<br>~~or~~<br>~~ee~~|<br>~~or~~<br>~~ee~~||
|Output Admittance<br>~~or~~<br>~~——~~|hoe<br>~~or~~<br>~~——~~<br>~~ee~~|1.0<br>~~or~~<br>~~——~~<br>~~ee~~|30<br>~~or~~<br>~~——~~|μS<br>~~or~~<br>~~——~~||
|Current Gain-Bandwidth Product<br>~~or~~<br>~~ee~~|fT<br>~~or~~<br>~~ee~~<br>~~ee~~|250<br>~~or~~<br>~~ee~~<br>~~ee~~|<br>~~or~~<br>~~ee~~|MHz<br>~~or~~<br>~~ee~~|VCE= 10V, IC= 20mA,<br>f = 100MHz<br>~~oe~~<br>~~ee~~|
|**SWITCHING CHARACTERISTICS**<br>~~ee ee~~<br>~~————~~<br>~~ee~~||||||
|Delay Time<br>~~————~~|td||15<br>~~ee~~|ns<br>~~ee~~|VCC= 30V, IC= 150mA,<br>VBE(off)=  2.0V, IB1= 15mA<br>~~ee~~|
|Rise Time<br>~~————~~|tr||20<br>~~ee~~|ns<br>~~ee~~||
|Storage Time<br>~~————~~<br>~~es~~|ts<br>~~es~~|<br>~~es~~|225<br>~~ee~~<br>~~es~~|ns<br>~~ee~~<br>~~es~~|VCC= 30V, IC= 150mA,<br>IB1= -IB2= 15mA<br>~~ee~~<br>~~es~~|
|Fall Time<br>~~————~~<br>~~es~~|tf<br>~~es~~|<br>~~es~~|30<br>~~ee~~<br>~~es~~|ns<br>~~ee~~<br>~~es~~||



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**MMBT4401** 

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1,000 0.5<br>a ee IC<br>IB [= 10]<br>TA = 125°C 0.4<br>SrS eer Sct ety eat EMUl<br>TA = 25°C<br>100 See 0.3 Beaa<br>Ce gE TA = -25°C  e TA = +25°C oTENC t 0.2 ar ae TA = 150°C NY<br>10<br>0.1<br>VCE = 1.0V TA = -50°C<br>1 See eset nt aaa 0 aarti amari(( eae<br>0.1 ConA 1 10 100 ull 1,000 1 TM 10 TL 100 1,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 1 Typical DC Current Gain vs. Collector Current Figure 2 Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>1.0 100<br>0.9 VCE = 5V a E H<br>TA = -50°C<br>0.8 > [MECCA] Tt 30 =o H EA ae F H<br>|  |e ——<br>0.7 TA = 25°C 20 Cibo<br>0.6 ae 10 FAH<br>0.5 Se] TA = 150°C 5 he a<br>0.4 Cobo<br>rity Sai aaah p e<br>0.3<br>a<br>0.2 iil a 1 nH<br>0.1 1 10 100 0.1 1.0 10 50<br>IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)<br>Figure 3 Typical Base-Emitter Turn-On Voltage  Figure 4 Typical Capacitance Characteristics<br>vs. Collector Current<br>1,000 2.0<br>VCE = 5VCE = 5V = 5V 1.8 IC = 1mA IC = 30mA<br>1.6 IC = 10mA<br>IC = 100mA<br>ee aaa “Hct<br>1.4<br>100 ss tt<br>IC = 300mA<br>1.2<br>a<br>1.0<br>0.8<br>10 TTT Ne AeA A<br>0.6<br>ee<br>0.4<br>0.2<br>ES CINE<br>1 al 0 BinnsAIARsTOT<br>1 10 100 0.001 0.01 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)<br>Figure 5 Typical Gain Bandwidth Product vs. Collector Current Figure 6 Typical Collector Saturation Region<br>, DC CURRENT GAIN<br>h<br>FE<br>, COLLECTOR-EMITTER<br>SATURATION VOLTAGE (V)<br>CE(SAT)<br>V<br>CAPACITANCE (pF)<br>T<br>, COLLECTOR-EMITTER VOLTAGE (V)<br>CE<br>V<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1,000<br>VCE = 5VCE = 5V = 5V<br>ee aaa<br>100 ss<br>a<br>10 TTT<br>ee<br>1 ES al<br>1 10 100<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Figure 5 Typical Gain Bandwidth Product vs. Collector Current<br>T<br>, GAIN BANDWIDTH PRODUCT (MHz)<br>f<br>**----- End of picture text -----**<br>


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MMBT4401 

December 2021 © Diodes Incorporated 

Document Number: DS30039  Rev. 18 - 2 

**MMBT4401** 

## **Package Outline Dimensions** 

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**----- Start of picture text -----**<br>
Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT23<br>All 7°<br>H<br>GAUGE PLANE SOT23<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20  1.40  1.30<br>C  2.30  2.50  2.40<br>a D  0.89 1.03 0.915<br>A M F  0.45  0.60  0.535<br>ee L L1 =EE= G  1.78  2.05  1.83<br>H  2.80 3.00 2.90<br>J  0.013  0.10  0.05<br>K  0.890 1.00 0.975<br>C 7 B ===— K1  0.903 1.10 1.025<br>L  0.45  0.61  0.55<br>L1  0.25 0.55 0.40<br>M  0.085 0.150  0.110<br>: ===<br>D a  0°  8°  --<br>All Dimensions in mm<br>F G<br>_ --  — | [| {|<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

Y Y1 ~~tt~~ C ~~me Po~~ X ~~Ld~~ X1 

|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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MMBT4401 Document Number: DS30039  Rev. 18 - 2 

December 2021 © Diodes Incorporated 

**MMBT4401** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves  the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

## **www.diodes.com** 

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- [View this product on Novapart](https://novapart.co/products/MMBT4401-7-F/bipolar-bjt-single-transistor-npn-40-v-600-ma-310)
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- [Supplier page](https://es.farnell.com/diodes-inc/mmbt4401/transistor-npn-40v-0-6a-sot23/dp/2061459RL)
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